Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay General Semiconductor - Diodes Division SMCJ110AHE3/9AT

Part No.:
SMCJ110AHE3/9AT
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
DO-214AB, SMC
Datasheet:
AetrixSMCJ110AHE3/9AT.pdf
Description:
TVS DIODE 110VWM 177VC DO214AB
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,520

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

SMCJ110AHE3/9AT from Vishay General Semiconductor is a unidirectional transient voltage suppressor (TVS) diode in SMC (DO-214AB) package, designed for high-energy surge protection with 110 V standoff voltage (VWM), 122–135 V breakdown range (VBR), and 177 V clamping voltage (VC) at 8.5 A peak pulse current (IPPM). It delivers 1500 W peak pulse power (10/1000 μs waveform) and operates across –55 °C to +150 °C junction temperature, used to protect MOSFETs, ICs, and sensor signal lines in automotive and industrial power electronics.

For engineers reviewing the SMCJ110AHE3/9AT datasheet, SMCJ110AHE3/9AT pinout, SMCJ110AHE3/9AT application, or SMCJ110AHE3/9AT equivalent, key selection criteria include clamping performance under 10/1000 μs transients, AEC-Q101 qualification status, thermal resistance (RθJA = 75 °C/W), and compatibility with automated SMT placement on 8.0 mm × 8.0 mm copper pads.

Technical Context

This TVS diode uses a glass-passivated silicon junction optimized for fast response (<1 ns) to voltage transients induced by inductive load switching or lightning surges. Its unidirectional polarity features a cathode band marking and supports reverse-biased operation up to 110 V DC before breakdown.

The device meets MSL level 1 per J-STD-020 (peak reflow 260 °C), has matte tin-plated leads compliant with J-STD-002 and JESD 22-B102, and exhibits low incremental surge resistance - enabling effective clamping of high-current transients without thermal runaway under repetitive stress conditions.

Key Specifications

ParameterValue and Actual Design Meaning
VWM110 V - maximum continuous reverse operating voltage before clamping initiates
VBR min/max122 V / 135 V at 1 mA test current - defines reliable breakdown threshold window
VC @ IPPM177 V at 8.5 A - clamped voltage during 10/1000 μs surge, limiting downstream stress
PPPM1500 W - peak transient energy absorption capability under standardized waveform
TJ max+150 °C - enables use in under-hood automotive and high-temperature industrial environments
RθJA75 °C/W - thermal resistance from junction to ambient, informs heatsinking requirements
ID @ VWM1.0 μA - ultra-low leakage ensures minimal standby power loss in high-impedance circuits

Pinout & Package

Package: SMC (DO-214AB), surface-mount, low-profile case with matte tin-plated leads; polarity indicated by cathode band on unidirectional devices.

Pin/TerminalCircuit RoleDesign Meaning
Cathode (banded end)Reverse-biased anode connection pointConnected to protected line; conducts during overvoltage to shunt current to ground
AnodeReference/ground return pathTypically tied to system ground or low-impedance return plane for effective clamping

Key Features

FeatureDesign Value
AEC-Q101 qualifiedValidated for automotive-grade reliability including temperature cycling, humidity, and surge endurance
Glass passivated junctionEnhances long-term stability and moisture resistance versus epoxy-passivated alternatives
MSL Level 1 ratingEnables single-pass reflow without pre-baking, reducing manufacturing complexity
Low clamping ratio (VC/VBR ≈ 1.39)Minimizes voltage overshoot during surge events, improving protection margin for 120 V-rated components
1500 W peak pulse powerSupports IEC 61000-4-5 Level 4 (4 kV/2 Ω) surge immunity compliance in properly designed layouts

Applications

Automotive Power DistributionIndustrial Motor Drive Inputs

Use Scenario: Protecting 12 V/24 V battery-fed ECUs against load dump and alternator transients.

IC Role / Device Role / Timing Role: Unidirectional TVS placed between power rail and chassis ground to clamp spikes up to ±100 V.

Use Value: Withstands 1500 W surges while maintaining 177 V clamping, preserving downstream PMICs and microcontrollers rated for ≤200 V absolute maximum.

Use Scenario: Safeguarding gate drivers and current-sense amplifiers connected to IGBT half-bridges.

IC Role / Device Role / Timing Role: Mounted across DC bus inputs to absorb commutation-induced voltage spikes.

Use Value: Fast <1 ns response limits dv/dt stress on isolated gate drivers; 1.0 μA leakage avoids bias current errors in precision analog sensing paths.

Telecom Line Interface ProtectionConsumer Appliance Control Boards

Use Scenario: Shielding RS-485 transceivers and PoE injectors from ESD and lightning-induced surges on outdoor cabling.

IC Role / Device Role / Timing Role: Bidirectional-capable variant family member used in unidirectional configuration on DC supply rails feeding PHY ICs.

Use Value: 122–135 V VBR range aligns with 110 V nominal telecom power systems, ensuring stable clamping without premature conduction during normal operation.

Use Scenario: Securing microcontroller I/O and relay coil suppression circuits in washing machines and HVAC controllers.

IC Role / Device Role / Timing Role: Placed across inductive relay coils to suppress turn-off flyback voltage exceeding 300 V.

Use Value: 200 A IFSM rating handles repeated 8.3 ms half-sine surges from relay switching, extending board-level reliability beyond 100,000 cycles.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient suppression applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
SMBJ110AHE3/52TLower PPPM (600 W), SMB package (smaller footprint, higher RθJA = 110 °C/W)Suitable only for lower-energy transients; limited thermal margin in high-ambient environmentsSelect when board space is constrained and surge threat level is ≤IEC 61000-4-5 Level 2
SMCJ110CAHE3/9ATBidirectional version; same VWM (110 V), symmetric clamping in both polaritiesRequired for AC-coupled or floating signal lines where polarity reversal may occurChoose for RS-232/RS-422 data lines or transformer-isolated interfaces needing bidirectional protection

Compared with SMCJ110AHE3/9AT, SMBJ110AHE3/52T trades surge capacity for compactness, while SMCJ110CAHE3/9AT adds polarity symmetry at no cost to clamping performance - making the original optimal for high-energy unidirectional DC rail protection where AEC-Q101 validation and thermal robustness are critical.

Availability

SMCJ110AHE3/9AT is available at Aetrix Electronics and suitable for automotive power modules, industrial motor drives, telecom infrastructure equipment, and consumer appliance control boards requiring stable component supply and long-term lifecycle support.

Supply support for SMCJ110AHE3/9AT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor designs and manufactures discrete semiconductors including diodes, rectifiers, and TVS devices, with emphasis on reliability, power handling, and automotive qualification.

The SMCJ series targets high-energy transient suppression in harsh environments; it was engineered specifically for AEC-Q101 compliance and robust surge immunity in 12 V–48 V systems across transportation and industrial markets.

FAQ

What is the clamping voltage of SMCJ110AHE3/9AT at its rated peak pulse current?

The SMCJ110AHE3/9AT has a maximum clamping voltage (VC) of 177 V when subjected to its specified peak pulse current (IPPM) of 8.5 A under a 10/1000 μs waveform. This value is measured per ANSI/IEEE C62.35 standards and reflects the upper limit of voltage seen by downstream circuitry during worst-case surge events - a critical parameter for ensuring compatibility with 200 V-rated components in the protected path.

Is SMCJ110AHE3/9AT qualified for automotive applications?

Yes, SMCJ110AHE3/9AT carries AEC-Q101 qualification, confirmed by Vishay's documentation and ordering code suffix "HE3". This certification covers stress tests including temperature cycling, humidity, mechanical shock, and surge endurance - validating its suitability for under-hood and body-control module applications where reliability under thermal and electrical stress is mandatory.

What does the "9AT" suffix indicate in SMCJ110AHE3/9AT?

The "9AT" suffix denotes the packaging configuration: 13-inch diameter plastic tape and reel, with a base quantity of 3500 units per reel. This format supports high-volume automated SMT assembly and is compatible with standard pick-and-place equipment. The "HE3" portion confirms RoHS-compliant construction and AEC-Q101 qualification, distinguishing it from commercial-grade "E3" variants.

How does the thermal resistance of SMCJ110AHE3/9AT affect PCB layout?

With a typical junction-to-ambient thermal resistance (RθJA) of 75 °C/W, SMCJ110AHE3/9AT requires adequate copper pad area - specifically 0.31″ × 0.31″ (8.0 mm × 8.0 mm) per terminal - to maintain safe junction temperatures during repetitive surges. Insufficient copper or lack of internal ground planes increases thermal impedance, risking derating of peak power capability and accelerated degradation over time.

Can SMCJ110AHE3/9AT be used in bidirectional signal protection?

No - SMCJ110AHE3/9AT is a unidirectional TVS diode, intended for DC rail protection where polarity is fixed. For bidirectional signal lines such as RS-485 or Ethernet PHY interfaces, the bidirectional variant SMCJ110CAHE3/9AT must be used instead, as it provides symmetrical clamping in both voltage polarities and lacks a cathode band marking.

SMCJ110AHE3/9AT Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
DO-214AB, SMC
Series:
TransZorb®
Packaging:
Tape & Reel (TR)
Product Status:
Discontinued at Digi-Key
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
110V
Voltage - Breakdown (Min):
122V
Voltage - Clamping (Max) @ Ipp:
177V
Current - Peak Pulse (10/1000µs):
8.5A
Power - Peak Pulse:
1500W (1.5kW)
Power Line Protection:
No
Applications:
-
Capacitance @ Frequency:
-
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
DO-214AB (SMCJ)

SMCJ110AHE3/9AT FAQ

1.How can I place an order for SMCJ110AHE3/9AT through Aetrix?

Please submit a Request for Quotation (RFQ) for SMCJ110AHE3/9AT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SMCJ110AHE3/9AT reliable?

The price and inventory of SMCJ110AHE3/9AT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMCJ110AHE3/9AT is usually 5 days.

3.What payment methods are accepted for SMCJ110AHE3/9AT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMCJ110AHE3/9AT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SMCJ110AHE3/9AT?

SMCJ110AHE3/9AT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SMCJ110AHE3/9AT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SMCJ110AHE3/9AT?

For technical support, including SMCJ110AHE3/9AT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMCJ110AHE3/9AT requirements.

6.How does Aetrix verify that SMCJ110AHE3/9AT is sourced from the original manufacturer or authorized distributors?

All SMCJ110AHE3/9AT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMCJ110AHE3/9AT meets industry standards.

7.What is the process for return or replacement of SMCJ110AHE3/9AT?

All SMCJ110AHE3/9AT units undergo pre-shipment inspection (PSI). If there is an issue with SMCJ110AHE3/9AT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SMCJ110AHE3/9AT part is unused and in its original packaging.

Return procedure for SMCJ110AHE3/9AT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SMCJ110AHE3/9AT Tags

  • SMCJ110AHE3/9AT
  • SMCJ110AHE3/9AT PDF
  • SMCJ110AHE3/9AT Datasheet
  • SMCJ110AHE3/9AT Specifications
  • SMCJ110AHE3/9AT Images
  • Vishay General Semiconductor - Diodes Division
  • Vishay General Semiconductor - Diodes Division SMCJ110AHE3/9AT
  • Buy SMCJ110AHE3/9AT
  • SMCJ110AHE3/9AT Price
  • SMCJ110AHE3/9AT Distributor
  • SMCJ110AHE3/9AT Supplier
  • SMCJ110AHE3/9AT Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER