Vishay General Semiconductor - Diodes Division SMCJ110CAHE3_A/H
- Part No.:
- SMCJ110CAHE3_A/H
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AB, SMC
- Datasheet:
-
SMCJ110CAHE3_A/H.pdf
- Description:
- TVS DIODE 110VWM 177VC DO214AB
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
SMCJ110CAHE3_A/H from Vishay General Semiconductor is a bidirectional surface-mount Transient Voltage Suppressor (TVS) diode in SMC (DO-214AB) package, designed for high-energy surge protection with 1500 W peak pulse power rating, 110 V standoff voltage (VWM), and clamping voltage of 177 V at 8.5 A peak pulse current. It protects sensitive ICs, MOSFETs, and sensor signal lines in automotive and industrial power electronics.
For engineers reviewing the SMCJ110CAHE3_A/H datasheet, SMCJ110CAHE3_A/H pinout, SMCJ110CAHE3_A/H application, or SMCJ110CAHE3_A/H equivalent, key selection criteria include bidirectional clamping capability, AEC-Q101 qualification, 1500 W surge handling, low incremental surge resistance, and compatibility with automated SMT assembly on standard PCB pad layouts.
Technical Context
This device operates as a voltage-clamped crowbar during transient overvoltage events, leveraging an avalanche breakdown junction to limit reverse voltage across protected circuits. Its bidirectional symmetry ensures identical clamping behavior in both polarities, eliminating polarity-dependent design constraints.
Rated for -55 °C to +150 °C operating junction temperature and compliant with J-STD-020 MSL Level 1, the SMCJ110CAHE3_A/H supports lead-free reflow soldering up to 260 °C peak. Its glass-passivated chip junction delivers stable breakdown characteristics and low leakage (<1.0 μA at VWM).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM (Stand-off Voltage) | 110 V - Maximum continuous reverse working voltage before clamping initiates; defines safe operating margin below breakdown. |
| VBR (Breakdown Voltage) | 122 V min / 135 V max at 1 mA - Confirmed avalanche onset range; ensures reliable triggering above system nominal voltage. |
| VC (Clamping Voltage) | 177 V at IPPM = 8.5 A - Peak voltage seen by protected circuit during 10/1000 μs surge; determines stress on downstream components. |
| PPPM (Peak Pulse Power) | 1500 W - Energy-handling capacity for standardized 10/1000 μs waveform; enables robust protection against IEC 61000-4-5 surges. |
| ID (Reverse Leakage) | ≤1.0 μA at VWM - Negligible standby current; avoids signal distortion or power loss in high-impedance interfaces. |
| TJ max | +150 °C - Maximum junction temperature rating; supports operation in under-hood automotive and industrial environments. |
| AEC-Q101 Qualified | Yes - Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD testing per AEC specification. |
Pinout & Package
Package: SMC (DO-214AB), surface-mount, bidirectional configuration with no polarity marking. Dimensions: 7.75 mm × 6.22 mm × 2.62 mm (L × W × H); matte tin-plated leads, J-STD-002 solderable.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Terminal 1 | One side of symmetrical PN junction; functions identically to cathode under reverse bias due to bidirectional construction. |
| Cathode | Terminal 2 | Other side of symmetrical PN junction; no band marking distinguishes terminals-both pins are electrically interchangeable. |
Key Features
| Feature | Design Value |
|---|---|
| Bidirectional clamping | Identical VBR and VC performance in both directions eliminates need for polarity-aware layout or orientation verification. |
| AEC-Q101 qualification | Validated for automotive applications including engine control units, body electronics, and ADAS sensor interfaces. |
| Low incremental surge resistance | Enables tighter clamping (VC/VBR ratio ≈ 1.45) and higher energy absorption without thermal runaway. |
| MSL Level 1 moisture sensitivity | Allows unlimited floor life and standard reflow without baking; compatible with high-volume SMT production lines. |
| Glass passivated junction | Ensures long-term parameter stability, low leakage drift, and resistance to humidity-induced degradation. |
Applications
| Automotive Power Distribution | Industrial Sensor Signal Lines |
|---|---|
|
Use Scenario: Protecting 12 V/24 V power rails in vehicle ECUs from load dump and inductive switching transients. IC Role / Device Role / Timing Role: Bidirectional TVS clamp placed upstream of DC-DC converters and microcontrollers. Use Value: Limits voltage excursions to ≤177 V during ISO 7637-2 Pulse 5a events, preventing latch-up or gate oxide damage in downstream silicon. |
Use Scenario: Shielding analog outputs of pressure/temperature sensors in factory automation systems. IC Role / Device Role / Timing Role: Low-capacitance transient suppressor on 4–20 mA or 0–10 V output paths. Use Value: Maintains signal integrity with <1.0 μA leakage at 110 V, while absorbing 1500 W surges induced by nearby motor contactors. |
| Telecom Power Feeds | Consumer Appliance Motor Controls |
|
Use Scenario: Safeguarding PoE-powered Ethernet switches against lightning-induced surges on DC input lines. IC Role / Device Role / Timing Role: Primary-level TVS on 48 V DC input rail before DC-DC regulation stages. Use Value: Withstands repeated 10/1000 μs surges up to 1500 W without degradation, meeting IEC 61000-4-5 Level 4 requirements. |
Use Scenario: Protecting triac/gate drivers in washing machine motor inverters from commutation spikes. IC Role / Device Role / Timing Role: Fast-response clamp across bridge rectifier outputs and IGBT gate drive supplies. Use Value: Sub-1 ns response time limits voltage overshoot to 177 V, preventing false triggering or destructive dv/dt failure in power semiconductors. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ110CAHE3_A/H | Lower PPPM (400 W), same VWM (110 V), SMA package (smaller footprint, lower thermal mass) | Suitable for lower-energy surges; not recommended for IEC 61000-4-5 Level 4 or automotive load dump. | Select when board space is constrained and surge threat level is limited to IEC 61000-4-2 ESD or low-energy switching noise. |
| SMCJ110AHE3_A/H | Unidirectional version; includes cathode band marking; identical VWM, VBR, VC, and PPPM ratings | Requires polarity-aware placement; used where DC bias prevents reverse conduction in normal operation. | Choose only if system topology guarantees unidirectional voltage stress and polarity can be reliably maintained in production. |
Compared with SMCJ110CAHE3_A/H, SMAJ110CAHE3_A/H trades surge capacity for compactness, while SMCJ110AHE3_A/H adds polarity dependency without improving clamping or power rating-making the bidirectional SMCJ110CAHE3_A/H optimal for general-purpose, polarity-agnostic protection.
Availability
SMCJ110CAHE3_A/H is available at Aetrix Electronics and suitable for automotive power distribution, industrial sensor interfaces, telecom power feeds, and consumer appliance motor controls requiring stable component supply and AEC-Q101 compliance.
Supply support for SMCJ110CAHE3_A/H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and passive components with emphasis on reliability, efficiency, and application-specific optimization.
The SMCJ series targets high-energy transient suppression in harsh environments, with design focus on automotive, industrial, and telecom infrastructure where robustness, AEC-Q101 validation, and standardized surge immunity are critical.
FAQ
What is the clamping voltage of the SMCJ110CAHE3_A/H under maximum rated surge current?
The SMCJ110CAHE3_A/H exhibits a maximum clamping voltage (VC) of 177 V when subjected to its rated peak pulse current (IPPM) of 8.5 A using the standard 10/1000 μs waveform. This value is measured per ANSI/IEEE C62.35 and confirmed in Vishay's datasheet revision 09-Jan-2024, ensuring predictable overvoltage limiting for protected circuits. The SMCJ110CAHE3_A/H maintains this clamping performance symmetrically in both directions due to its bidirectional construction.
Is the SMCJ110CAHE3_A/H qualified for automotive applications?
Yes, the SMCJ110CAHE3_A/H carries AEC-Q101 qualification, verified through accelerated stress testing including high-temperature reverse bias (HTRB), temperature cycling, and ESD. Its HE3 suffix explicitly denotes RoHS-compliant and AEC-Q101-qualified construction, making it suitable for under-hood and chassis-mounted automotive modules. The SMCJ110CAHE3_A/H meets the reliability requirements for engine control, body electronics, and ADAS subsystems.
Does the SMCJ110CAHE3_A/H have polarity markings on the package?
No, the SMCJ110CAHE3_A/H does not feature polarity markings such as a cathode band because it is a bidirectional TVS diode. Both terminals are functionally identical, and the device clamps equally in either direction. This eliminates orientation errors during automated placement and simplifies PCB layout-no silkscreen polarity indicators are required. The SMCJ110CAHE3_A/H is physically and electrically symmetric in operation.
What is the thermal resistance of the SMCJ110CAHE3_A/H from junction to ambient?
The typical thermal resistance from junction to ambient (RθJA) for the SMCJ110CAHE3_A/H is 75 °C/W when mounted on the minimum recommended copper pad layout (0.31" × 0.31", or 8.0 mm × 8.0 mm per terminal). This value assumes natural convection cooling and is critical for calculating steady-state junction temperature rise under continuous power dissipation. The SMCJ110CAHE3_A/H also has RθJL = 15 °C/W for junction-to-lead conduction, supporting thermal design in thermally constrained layouts.
Can the SMCJ110CAHE3_A/H replace a unidirectional SMCJ110AHE3_A/H in an existing design?
The SMCJ110CAHE3_A/H can replace the unidirectional SMCJ110AHE3_A/H without PCB changes only if the application subjects the device to bidirectional voltage stress-or if the DC bias is absent or reversible. Since the SMCJ110CAHE3_A/H lacks polarity marking and clamps identically in both directions, it avoids reverse-bias failure risks present in unidirectional parts. However, the SMCJ110CAHE3_A/H should not be substituted where strict unidirectional blocking is required during normal operation, as its leakage and capacitance profiles differ slightly.
SMCJ110CAHE3_A/H Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AB, SMC
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 110V
- Voltage - Breakdown (Min):
- 122V
- Voltage - Clamping (Max) @ Ipp:
- 177V
- Current - Peak Pulse (10/1000µs):
- 8.5A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AB (SMCJ)
SMCJ110CAHE3_A/H FAQ
1.How can I place an order for SMCJ110CAHE3_A/H through Aetrix?
Please submit a Request for Quotation (RFQ) for SMCJ110CAHE3_A/H on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMCJ110CAHE3_A/H reliable?
The price and inventory of SMCJ110CAHE3_A/H are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMCJ110CAHE3_A/H is usually 5 days.
3.What payment methods are accepted for SMCJ110CAHE3_A/H?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMCJ110CAHE3_A/H transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMCJ110CAHE3_A/H?
SMCJ110CAHE3_A/H orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMCJ110CAHE3_A/H order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMCJ110CAHE3_A/H?
For technical support, including SMCJ110CAHE3_A/H datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMCJ110CAHE3_A/H requirements.
6.How does Aetrix verify that SMCJ110CAHE3_A/H is sourced from the original manufacturer or authorized distributors?
All SMCJ110CAHE3_A/H products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMCJ110CAHE3_A/H meets industry standards.
7.What is the process for return or replacement of SMCJ110CAHE3_A/H?
All SMCJ110CAHE3_A/H units undergo pre-shipment inspection (PSI). If there is an issue with SMCJ110CAHE3_A/H, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMCJ110CAHE3_A/H part is unused and in its original packaging.
Return procedure for SMCJ110CAHE3_A/H:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMCJ110CAHE3_A/H Tags

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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onsemi

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Diodes Incorporated

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Diodes Incorporated

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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