My Inquiry
My Account
Vishay General Semiconductor - Diodes Division SMCJ11HE3/57T
- Part No.:
- SMCJ11HE3/57T
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AB, SMC
- Datasheet:
-
SMCJ11HE3/57T.pdf
- Description:
- TVS DIODE 11VWM 20.1VC DO214AB
- Quantity:
- Payment:
- Shipping:
Inventory:4,230
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SMCJ11HE3/57T from Vishay General Semiconductor is a unidirectional transient voltage suppressor (TVS) diode in DO-214AB (SMCJ) package, with 11 V standoff voltage (VWM), 12.2–13.5 V breakdown voltage (VBR at 1 mA), 18.2 V clamping voltage (VC) at 82.4 A peak pulse current, and 1500 W peak pulse power rating for 10/1000 µs waveform - designed to protect automotive-grade power rails and signal lines against ESD and load dump transients.
For engineers reviewing the SMCJ11HE3/57T datasheet, SMCJ11HE3/57T pinout, SMCJ11HE3/57T application, or SMCJ11HE3/57T equivalent, this AEC-Q101 qualified, RoHS-compliant TVS offers verified clamping performance, low incremental surge resistance, and MSL Level 1 moisture sensitivity - critical for automotive electronics, industrial sensor interfaces, and DC power input protection where reliability under repetitive surge stress is required.
Technical Context
The SMCJ11HE3/57T operates as a unidirectional avalanche diode, triggered when reverse voltage exceeds its 12.2–13.5 V breakdown range, clamping transients to ≤18.2 V at 82.4 A. Its glass-passivated junction ensures stable leakage (<5 µA at 11 V) and fast response time (<1.0 ps), enabling protection of downstream MOSFETs and ICs during inductive switching events.
Thermally, it features RθJA = 75 °C/W and RθJL = 15 °C/W, supporting operation from –55 °C to +150 °C junction temperature. The device is rated for 200 A non-repetitive forward surge (8.3 ms half-sine) and meets UL 497B recognition (QVGQ2) for protector classification.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM (Stand-off Voltage) | 11 V - maximum continuous reverse operating voltage before conduction begins |
| VBR (Breakdown Voltage) | 12.2–13.5 V at 1 mA - precise avalanche initiation threshold for predictable clamping onset |
| VC (Clamping Voltage) | 18.2 V at 82.4 A (10/1000 µs) - limits transient voltage seen by protected circuitry |
| PPPM (Peak Pulse Power) | 1500 W - sustains high-energy surges without failure under standardized test waveform |
| IPPM (Peak Pulse Current) | 82.4 A - maximum surge current the device safely diverts during clamping |
| TJ max. | +150 °C - enables use in under-hood automotive environments and high-ambient industrial settings |
| Leakage (ID) | ≤5 µA at 11 V - negligible standby power loss and minimal interference on sensitive analog/sensor lines |
Pinout & Package
Package: DO-214AB (SMCJ), surface-mount, low-profile case with matte tin-plated leads solderable per J-STD-002 and JESD 22-B102; polarity indicated by cathode band on one end.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry / Reverse voltage reference | Connected to system ground or lower-potential rail in unidirectional configuration |
| Cathode (banded end) | Avalanche conduction terminal | Connected to line being protected (e.g., 12 V supply rail); conducts during overvoltage to shunt energy to ground |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive applications including engine control units and body electronics requiring long-term reliability under thermal cycling and vibration |
| Glass-passivated junction | Ensures stable electrical parameters across temperature and lifetime, minimizing parameter drift in harsh environments |
| MSL Level 1 (260 °C peak reflow) | Enables standard SMT assembly without pre-baking, reducing manufacturing complexity and cost |
| UL 497B recognition (QVGQ2) | Confirms compliance with safety standards for telecom and industrial surge protection systems requiring certified components |
| Low incremental surge resistance | Minimizes voltage overshoot during fast-rising transients, improving protection margin for 3.3 V/5 V logic interfaces |
Applications
| Automotive Power Input Protection | Industrial Sensor Signal Line Protection |
|---|---|
Use Scenario: Protecting 12 V battery-fed ECUs from load dump (ISO 7637-2 Pulse 5a) and alternator-induced transients. IC Role / Device Role / Timing Role: Unidirectional TVS placed between power rail and chassis ground to clamp surges above 18.2 V. Use Value: Prevents damage to voltage regulators and microcontrollers by limiting peak rail voltage to safe levels during 1500 W surge events. | Use Scenario: Shielding analog output lines (e.g., 4–20 mA current loop) from ESD and field wiring induced spikes in factory automation. IC Role / Device Role / Timing Role: TVS connected between signal line and local ground to absorb ±8 kV contact ESD (IEC 61000-4-2) and inductive kickback. Use Value: Maintains signal integrity and prevents latch-up in op-amps and ADC drivers by clamping transients within 1 ns response window. |
| DC-DC Converter Input Stage | Telecom Power Interface Protection |
Use Scenario: Safeguarding buck converter inputs in PoE-powered devices exposed to lightning-induced surges on Ethernet cables. IC Role / Device Role / Timing Role: Primary surge suppression stage upstream of filter inductors and input capacitors. Use Value: Absorbs up to 1500 W transient energy without degradation, preserving converter efficiency and preventing MOSFET avalanche failure. | Use Scenario: Protecting AC/DC adapter outputs feeding telecom base station backplanes from AC line transients and coupling noise. IC Role / Device Role / Timing Role: Final-stage TVS on regulated 12 V/24 V distribution bus to suppress residual surges after primary MOV filtering. Use Value: Ensures uninterrupted operation of FPGAs and SERDES links by holding clamped voltage below 18.2 V during 10/1000 µs surges. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ11A-E3/52T | Lower PPPM (400 W), smaller SMA package (DO-214AC), higher VC (18.2 V → 19.9 V at 22.5 A) | Suitable for space-constrained consumer electronics but not automotive-grade surge robustness | Select when board area is limited and surge energy is ≤400 W; verify thermal derating for ambient >85 °C |
| 1.5KE11A | Through-hole TO-218 package, same VWM/VC, higher IFSM (225 A), no AEC-Q101 qualification | Used in legacy industrial power supplies where manual assembly and higher surge margin are prioritized over automotive compliance | Choose for high-reliability non-automotive designs needing proven field history and easier hand-solder rework |
Compared with SMAJ11A-E3/52T and 1.5KE11A, the SMCJ11HE3/57T delivers superior automotive qualification, higher surge power handling, and optimized SMT manufacturability - making it the preferred choice for new automotive and industrial designs requiring AEC-Q101 validation and 1500 W transient immunity.
Availability
SMCJ11HE3/57T is available at Aetrix Electronics and suitable for automotive electronics, industrial sensor interfaces, and DC-DC converter input protection requiring stable component supply and full traceability.
Supply support for SMCJ11HE3/57T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, and protection devices with emphasis on reliability, precision, and automotive-grade qualification.
The SMCJ series belongs to Vishay's TRANSZORB® TVS platform, engineered specifically for high-energy transient suppression in automotive, industrial, and telecom infrastructure where AEC-Q101 compliance and repeatable clamping performance are mandatory.
FAQ
What is the clamping voltage of the SMCJ11HE3/57T and how does it protect downstream circuits?
The SMCJ11HE3/57T has a maximum clamping voltage (VC) of 18.2 V at 82.4 A peak pulse current (10/1000 µs). This means that during a transient event, the device limits the voltage across protected circuitry to ≤18.2 V - well below typical 24 V system damage thresholds - thereby preventing overvoltage stress on connected ICs, MOSFETs, or regulators. Its low incremental surge resistance ensures minimal overshoot, enhancing protection margin.
Is the SMCJ11HE3/57T suitable for automotive applications?
Yes, the SMCJ11HE3/57T is AEC-Q101 qualified and rated for operation from –55 °C to +150 °C, making it suitable for under-hood and cabin automotive applications including engine control modules, body control units, and ADAS sensor power rails. Its DO-214AB package supports automated SMT assembly, and its UL 497B recognition confirms compliance with automotive surge safety requirements.
How does the HE3 suffix differ from E3 in Vishay's SMCJ part numbering?
The HE3 suffix in SMCJ11HE3/57T indicates RoHS-compliant construction with AEC-Q101 qualification and JESD 201 Class 2 whisker resistance, whereas E3 denotes RoHS compliance only (commercial grade, no automotive qualification). Both share the same DO-214AB package and electrical specs, but HE3 is mandatory for automotive designs requiring validated reliability and extended temperature performance.
What is the maximum leakage current of the SMCJ11HE3/57T at its standoff voltage?
The SMCJ11HE3/57T exhibits a maximum reverse leakage current (ID) of 5 µA at its 11 V standoff voltage (VWM). This ultra-low leakage ensures minimal power loss in always-on systems and avoids loading sensitive analog sensor outputs or high-impedance reference nodes - critical for battery-powered and precision measurement applications.
Can the SMCJ11HE3/57T be used in bi-directional configurations?
No - the SMCJ11HE3/57T is a unidirectional TVS diode, identified by the "A" suffix (not "CA"). It conducts only in reverse bias above VBR; for bi-directional protection (e.g., AC lines or differential data buses), the SMCJ11CA variant must be used. Using SMCJ11HE3/57T in bi-directional applications risks forward conduction and potential failure during positive transients.
SMCJ11HE3/57T Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AB, SMC
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 11V
- Voltage - Breakdown (Min):
- 12.2V
- Voltage - Clamping (Max) @ Ipp:
- 20.1V
- Current - Peak Pulse (10/1000µs):
- 74.6A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AB (SMCJ)
SMCJ11HE3/57T FAQ
1.How can I place an order for SMCJ11HE3/57T through Aetrix?
Please submit a Request for Quotation (RFQ) for SMCJ11HE3/57T on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMCJ11HE3/57T reliable?
The price and inventory of SMCJ11HE3/57T are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMCJ11HE3/57T is usually 5 days.
3.What payment methods are accepted for SMCJ11HE3/57T?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMCJ11HE3/57T transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMCJ11HE3/57T?
SMCJ11HE3/57T orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMCJ11HE3/57T order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMCJ11HE3/57T?
For technical support, including SMCJ11HE3/57T datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMCJ11HE3/57T requirements.
6.How does Aetrix verify that SMCJ11HE3/57T is sourced from the original manufacturer or authorized distributors?
All SMCJ11HE3/57T products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMCJ11HE3/57T meets industry standards.
7.What is the process for return or replacement of SMCJ11HE3/57T?
All SMCJ11HE3/57T units undergo pre-shipment inspection (PSI). If there is an issue with SMCJ11HE3/57T, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMCJ11HE3/57T part is unused and in its original packaging.
Return procedure for SMCJ11HE3/57T:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMCJ11HE3/57T Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
