Vishay General Semiconductor - Diodes Division SMCJ130AHE3_A/H

Overview

SMCJ130AHE3_A/H from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in SMC (DO-214AB) package, with 130 V standoff voltage (V_WM), 144–159 V breakdown voltage (V_BR), 209 V clamping voltage (V_C) at 7.2 A peak pulse current, and 1500 W peak pulse power rating for 10/1000 µs transients. It protects automotive power rails and industrial sensor interfaces against ESD and load-dump surges.

For engineers reviewing the SMCJ130AHE3_A/H datasheet, SMCJ130AHE3_A/H pinout, SMCJ130AHE3_A/H application, or SMCJ130AHE3_A/H equivalent, key selection criteria include clamping voltage margin relative to protected IC's absolute maximum rating, junction temperature derating above 25 °C, AEC-Q101 qualification status, and compatibility with automated SMT placement on 8 mm × 8 mm copper pads.

Technical Context

This TVS operates as a unidirectional avalanche clamp: reverse-biased during normal operation with ≤1.0 µA leakage at 130 V, then rapidly avalanches when transient voltage exceeds 144 V (min V_BR) to limit downstream voltage to ≤209 V. Its glass-passivated junction ensures stable breakdown and low incremental surge resistance.

Designed for high-energy transient suppression, it handles 200 A non-repetitive forward surge (8.3 ms half-sine) and sustains 6.5 W steady-state dissipation at 50 °C ambient. Thermal resistance is 75 °C/W junction-to-ambient (on recommended pad layout) and 15 °C/W junction-to-lead.

Key Specifications

Pinout & Package

Package: SMC (DO-214AB), surface-mount, matte tin-plated leads, RoHS-compliant and halogen-free (HE3 suffix), MSL Level 1 (260 °C peak reflow).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient suppression applications.

Compared with SMCJ130AHE3_A/H, SMAJ130AHE3/A offers smaller size but lower surge capacity, while SMCJ130CAHE3_A/H provides polarity-agnostic clamping at identical power rating-neither is pin-compatible due to different package outlines (SMA vs. SMC), requiring PCB redesign.

Availability

SMCJ130AHE3_A/H is available at Aetrix Electronics and suitable for automotive electronic control units, industrial sensor modules, telecom power supplies, and motor drive control boards requiring stable component supply and AEC-Q101 compliance.

Supply support for SMCJ130AHE3_A/H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, MOSFETs, optoelectronics, and passive components with emphasis on reliability and application-specific performance.

The SMCJ series is part of Vishay's TRANSZORB® TVS platform, engineered for high-energy transient suppression in harsh environments-including automotive, industrial, and telecom infrastructure-where robustness and repeatable clamping are mandatory.

FAQ

What is the clamping voltage of SMCJ130AHE3_A/H and how is it measured?

The clamping voltage (V_C) of SMCJ130AHE3_A/H is 209 V, measured at 7.2 A peak pulse current using a standardized 10/1000 µs double-exponential waveform. This value represents the maximum voltage imposed on the protected circuit during a surge event. The SMCJ130AHE3_A/H achieves this clamping performance due to its low incremental surge resistance and optimized silicon junction design, ensuring predictable protection behavior across temperature and lifetime.

Is SMCJ130AHE3_A/H qualified for automotive applications?

Yes, SMCJ130AHE3_A/H is AEC-Q101 qualified, as indicated by the "HE3" suffix in its ordering code. This qualification confirms that the SMCJ130AHE3_A/H has passed stress tests including high-temperature reverse bias, temperature cycling, and ESD per AEC-Q101 Rev D. It is approved for use in automotive powertrain, chassis, and body electronics where reliability under thermal and electrical stress is critical.

What is the thermal resistance of SMCJ130AHE3_A/H and how does it affect PCB layout?

The SMCJ130AHE3_A/H has a typical junction-to-ambient thermal resistance (R_θJA) of 75 °C/W when mounted on the minimum recommended 0.31" × 0.31" (8.0 mm × 8.0 mm) copper pads per terminal. To maintain safe junction temperatures under sustained power dissipation, designers must allocate adequate copper area and consider airflow. The SMCJ130AHE3_A/H also features R_θJL = 15 °C/W, supporting efficient heat transfer to PCB traces or heatsinks via its leads.

How does the unidirectional configuration of SMCJ130AHE3_A/H differ from bidirectional variants?

The SMCJ130AHE3_A/H is unidirectional, meaning it conducts only when the cathode is positive relative to the anode-ideal for DC rail protection where polarity is fixed. In contrast, bidirectional variants like SMCJ130CAHE3_A/H clamp in both directions and lack polarity marking. The SMCJ130AHE3_A/H's unidirectional nature allows tighter V_BR tolerance and avoids leakage concerns in DC systems, but requires correct orientation during placement.

What is the maximum reverse leakage current of SMCJ130AHE3_A/H at its standoff voltage?

The maximum reverse leakage current (I_D) of SMCJ130AHE3_A/H is 1.0 µA at its 130 V standoff voltage (V_WM) and 25 °C ambient temperature. This low leakage ensures minimal power loss and no interference with upstream voltage regulation or sensing circuits. Leakage increases with temperature and voltage stress, remaining well below 10 µA even at 150 °C junction temperature per device characterization data.