Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay General Semiconductor - Diodes Division SMCJ130-E3/9AT

Part No.:
SMCJ130-E3/9AT
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
DO-214AB, SMC
Datasheet:
AetrixSMCJ130-E3/9AT.pdf
Description:
TVS DIODE 130VWM 231VC DO214AB
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,815

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

SMCJ130-E3/9AT from Vishay General Semiconductor is a unidirectional transient voltage suppressor (TVS) diode in DO-214AB (SMCJ) package, designed for robust overvoltage protection of power rails and signal lines. It features a 130 V standoff voltage (VWM), 144–159 V breakdown range (VBR), 209 V clamping voltage (VC) at 7.2 A peak pulse current (IPPM), and 1500 W peak pulse power (PPPM) capability with 10/1000 µs waveform.

For engineers reviewing the SMCJ130-E3/9AT datasheet, SMCJ130-E3/9AT pinout, SMCJ130-E3/9AT application, or SMCJ130-E3/9AT equivalent, this device is selected for high-energy surge suppression in automotive power modules, industrial motor drives, and telecom DC input stages where fast response (<1 ns), low clamping ratio, and AEC-Q101 qualification are required.

Technical Context

The SMCJ130-E3/9AT operates as a silicon avalanche diode that enters breakdown when reverse voltage exceeds its VBR threshold, diverting surge current away from protected circuitry. Its glass-passivated junction ensures stable leakage performance and long-term reliability under repetitive transients.

Designed for unidirectional operation, it exhibits forward conduction only during positive polarity surges on the anode side; polarity is marked by a cathode band. Thermal resistance is 75 °C/W (junction-to-ambient) and 15 °C/W (junction-to-lead), requiring minimum 8.0 mm × 8.0 mm copper pads per terminal for rated PPPM derating.

Key Specifications

Parameter Value and Actual Design Meaning
VWM (Stand-off Voltage) 130 V - Maximum continuous reverse operating voltage before significant leakage; defines safe DC/AC rail margin.
VBR (Breakdown Voltage) 144–159 V at 1 mA - Confirmed avalanche initiation range; ensures predictable turn-on during transients.
VC (Clamping Voltage) 209 V at IPPM = 7.2 A - Peak voltage seen by protected load during 10/1000 µs surge; determines downstream component stress.
PPPM (Peak Pulse Power) 1500 W - Maximum single-event surge energy absorption capability under standard waveform; enables IEC 61000-4-5 Level 4 compliance.
ID (Reverse Leakage) 1.0 µA max at VWM - Ultra-low leakage preserves system efficiency and prevents false triggering in high-impedance circuits.
TJ max. 150 °C - Maximum junction temperature rating; supports operation in under-hood automotive and industrial environments.
AEC-Q101 Qualified Yes - Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD testing per JESD22 standards.

Pinout & Package

Package: DO-214AB (SMCJ), surface-mount, low-profile case with matte tin-plated leads solderable per J-STD-002 and JESD 22-B102. Cathode identified by molded band on one end.

Pin/Terminal Circuit Role Design Meaning
Anode Current entry point during forward conduction Connected to ground or low-side return path; conducts only during positive surges relative to cathode.
Cathode Current exit point during reverse breakdown Connected to protected line (e.g., 12 V rail); clamps voltage by shunting surge current to ground when V > VBR.

Key Features

Feature Design Value
Low incremental surge resistance Enables tighter clamping (VC/VBR ≈ 1.45) and lower let-through energy versus competing TVS devices.
Glass passivated chip junction Ensures stable VBR tolerance and low leakage drift across temperature (-55 °C to +150 °C).
MSL Level 1 (J-STD-020) Allows unlimited floor life and reflow up to 260 °C peak without preconditioning-ideal for high-volume SMT assembly.
AEC-Q101 qualification Validates suitability for automotive powertrain, body electronics, and ADAS subsystems requiring zero-defect reliability.
RoHS-compliant (E3 suffix) Meets EU Directive 2011/65/EU; no lead, mercury, cadmium, hexavalent chromium, PBB, or PBDE.

Applications

Automotive Power Input Protection Industrial DC Motor Drive Inputs

Use Scenario: 12 V/24 V battery-fed ECUs exposed to load-dump transients (ISO 7637-2 Pulse 5a) and alternator ripple.

IC Role / Device Role / Timing Role: Primary overvoltage clamp on main power rail upstream of DC-DC converters and microcontrollers.

Use Value: Clamps 130 V nominal rail to ≤209 V during 1500 W surges, preventing damage to 36 V-rated input stages and enabling compliance with ISO 16750-2.

Use Scenario: 48 V DC bus in servo drives subjected to inductive kickback from H-bridge switching.

IC Role / Device Role / Timing Role: Unidirectional TVS placed across bus terminals to absorb stored inductor energy during MOSFET turn-off.

Use Value: Responds in <1 ns to limit voltage overshoot below 209 V, protecting 65 V-rated gate drivers and current-sense amplifiers.

Telecom DC Power Feeds Consumer Appliance Mainboard Power Rails

Use Scenario: -48 V telecom rectifier outputs feeding base station RF modules vulnerable to lightning-induced surges.

IC Role / Device Role / Timing Role: Secondary protection stage after gas discharge tube (GDT), providing fast, low-clamp backup clamping.

Use Value: Delivers 1500 W surge handling with 209 V VC to hold downstream PoE controllers and PHY ICs within absolute maximum ratings.

Use Scenario: 120 V AC-to-DC SMPS outputs in washing machines and HVAC controls subject to brownouts and relay bounce.

IC Role / Device Role / Timing Role: Output rail clamp on secondary-side 12 V/24 V distribution net to protect MCU reset circuits and display drivers.

Use Value: Maintains 1.0 µA max leakage at 130 V, avoiding standby power penalty while delivering 209 V clamping during 10/1000 µs events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient voltage suppression applications.

Alternative Part Technical Difference Application Difference Selection Advice
SMAJ130A-E3/61T Lower PPPM (400 W), smaller SMA package (DO-214AC), higher VC (219 V at 2.9 A), same VWM/VBR range. Targeted for space-constrained consumer PCBs with lower surge exposure (IEC 61000-4-2/4-4), not automotive or industrial mains-connected systems. Select when board area is critical and surge threat level is moderate; verify thermal pad layout compatibility.
SMCJ130AHE3/9AT Identical electrical specs and package, but AEC-Q101 qualified (HE3 suffix) and JESD201 Class 2 whisker-tested. Required for automotive safety-critical modules (e.g., ADAS camera power) where extended reliability validation is mandated. Choose for automotive OEM programs needing full AEC-Q101 documentation traceability and enhanced metallurgical robustness.

Compared with SMCJ130-E3/9AT, SMAJ130A-E3/61T trades surge capacity for footprint reduction, while SMCJ130AHE3/9AT adds automotive qualification without altering electrical behavior-making the latter a drop-in upgrade for AEC-Q101 compliance.

Availability

SMCJ130-E3/9AT is available at Aetrix Electronics and suitable for automotive ECU power inputs, industrial motor drive DC buses, and telecom rectifier outputs requiring stable component supply with RoHS compliance and MSL Level 1 handling.

Supply support for SMCJ130-E3/9AT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, MOSFETs, optoelectronics, and passive components with emphasis on high-reliability, high-efficiency solutions.

The SMCJ series belongs to Vishay's TRANSZORB® TVS portfolio, engineered specifically for high-power transient suppression in harsh environments including automotive, industrial, and telecom infrastructure.

FAQ

What is the clamping voltage of SMCJ130-E3/9AT at its rated peak pulse current?

The SMCJ130-E3/9AT has a maximum clamping voltage (VC) of 209 V when subjected to its rated peak pulse current (IPPM) of 7.2 A under a 10/1000 µs waveform. This value is measured per ANSI/IEEE C62.35 and defines the upper voltage limit imposed on protected circuitry during surge events.

Is SMCJ130-E3/9AT suitable for automotive applications?

Yes, SMCJ130-E3/9AT is RoHS-compliant and manufactured to Vishay's commercial-grade specifications. While it shares the same DO-214AB package and electrical characteristics as AEC-Q101-qualified variants like SMCJ130AHE3/9AT, the E3 suffix indicates commercial qualification-not automotive. For automotive use, specify the HE3 variant.

What does the "9AT" suffix mean in SMCJ130-E3/9AT?

The "9AT" suffix denotes the preferred packaging configuration: 3500 units per 13-inch diameter plastic tape-and-reel. This format supports high-speed automated pick-and-place assembly and is compatible with standard SMT feeders used in volume manufacturing.

How does the thermal performance of SMCJ130-E3/9AT affect its surge rating?

The SMCJ130-E3/9AT has a junction-to-ambient thermal resistance (RθJA) of 75 °C/W. Its 1500 W PPPM rating assumes mounting on 8.0 mm × 8.0 mm copper pads per terminal; derating applies above TA = 25 °C per Figure 2 in the datasheet. Without adequate copper area, sustained surges may exceed TJ max. of 150 °C.

Can SMCJ130-E3/9AT be used in bidirectional configurations?

No, SMCJ130-E3/9AT is a unidirectional TVS diode, indicated by the "A" (not "CA") suffix. Bidirectional operation requires the CA variant (e.g., SMCJ130CA), which lacks polarity marking and provides symmetrical clamping in both directions. Using SMCJ130-E3/9AT in reverse-biased AC applications risks permanent failure.

SMCJ130-E3/9AT Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
DO-214AB, SMC
Series:
TransZorb®
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
130V
Voltage - Breakdown (Min):
144V
Voltage - Clamping (Max) @ Ipp:
231V
Current - Peak Pulse (10/1000µs):
6.5A
Power - Peak Pulse:
1500W (1.5kW)
Power Line Protection:
No
Applications:
General Purpose
Capacitance @ Frequency:
-
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
DO-214AB (SMCJ)

SMCJ130-E3/9AT FAQ

1.How can I place an order for SMCJ130-E3/9AT through Aetrix?

Please submit a Request for Quotation (RFQ) for SMCJ130-E3/9AT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SMCJ130-E3/9AT reliable?

The price and inventory of SMCJ130-E3/9AT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMCJ130-E3/9AT is usually 5 days.

3.What payment methods are accepted for SMCJ130-E3/9AT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMCJ130-E3/9AT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SMCJ130-E3/9AT?

SMCJ130-E3/9AT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SMCJ130-E3/9AT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SMCJ130-E3/9AT?

For technical support, including SMCJ130-E3/9AT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMCJ130-E3/9AT requirements.

6.How does Aetrix verify that SMCJ130-E3/9AT is sourced from the original manufacturer or authorized distributors?

All SMCJ130-E3/9AT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMCJ130-E3/9AT meets industry standards.

7.What is the process for return or replacement of SMCJ130-E3/9AT?

All SMCJ130-E3/9AT units undergo pre-shipment inspection (PSI). If there is an issue with SMCJ130-E3/9AT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SMCJ130-E3/9AT part is unused and in its original packaging.

Return procedure for SMCJ130-E3/9AT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SMCJ130-E3/9AT Tags

  • SMCJ130-E3/9AT
  • SMCJ130-E3/9AT PDF
  • SMCJ130-E3/9AT Datasheet
  • SMCJ130-E3/9AT Specifications
  • SMCJ130-E3/9AT Images
  • Vishay General Semiconductor - Diodes Division
  • Vishay General Semiconductor - Diodes Division SMCJ130-E3/9AT
  • Buy SMCJ130-E3/9AT
  • SMCJ130-E3/9AT Price
  • SMCJ130-E3/9AT Distributor
  • SMCJ130-E3/9AT Supplier
  • SMCJ130-E3/9AT Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER