Vishay General Semiconductor - Diodes Division SMCJ150AHE3_A/H

Overview

SMCJ150AHE3_A/H from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in SMC (DO-214AB) package, featuring 150 V standoff voltage (VWM), 243 V clamping voltage (VC) at 6.2 A peak pulse current (IPPM), and 1500 W peak pulse power (PPPM) with 10/1000 µs waveform. It protects MOSFETs, ICs, and sensor signal lines against inductive switching transients and lightning surges in automotive and industrial power electronics.

For engineers reviewing the SMCJ150AHE3_A/H datasheet, SMCJ150AHE3_A/H pinout, SMCJ150AHE3_A/H application, or SMCJ150AHE3_A/H equivalent, key selection criteria include unidirectional polarity, AEC-Q101 qualification status, thermal resistance (RθJA = 75 °C/W), junction temperature range (–55 to +150 °C), and compatibility with automated SMT placement on 8.0 mm × 8.0 mm copper pads.

Technical Context

This TVS diode operates as a clamping device that enters avalanche breakdown above its 167–185 V breakdown voltage (VBR) to divert surge energy away from protected circuitry. Its glass-passivated junction ensures stable leakage performance (<1.0 µA at VWM) and fast response time (<1.0 ps), enabling protection of high-speed interfaces without signal distortion.

The device is rated for 1500 W peak pulse power under standardized 10/1000 µs waveform conditions and supports unidirectional surge handling up to 200 A IFSM (8.3 ms half-sine). Its MSL Level 1 rating and matte tin-plated leads comply with J-STD-002 solderability and JESD 22-B102 whisker testing requirements.

Key Specifications

Pinout & Package

Package: SMC (DO-214AB), surface-mount, low-profile case with cathode band marking. Dimensions: 7.75 mm × 6.22 mm × 2.62 mm (L × W × H); terminals are matte tin-plated for lead-free reflow compatibility.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient suppression applications.

Compared with SMAJ150A-E3/57T, SMCJ150AHE3_A/H delivers 275 % higher surge power handling and automotive qualification; versus SMCJ150CAHE3_A/H, it provides lower reverse leakage and optimized clamping for DC-biased rails where polarity is fixed.

Availability

SMCJ150AHE3_A/H is available at Aetrix Electronics and suitable for automotive power distribution, industrial motor drive inputs, telecom DC feeds, and automotive sensor signal line protection requiring stable component supply and AEC-Q101 assurance.

Supply support for SMCJ150AHE3_A/H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor designs and manufactures discrete semiconductors including diodes, rectifiers, and TVS devices, with emphasis on high-reliability, automotive-qualified components meeting international safety and environmental standards.

The SMCJ series targets high-energy transient suppression in harsh environments; it was engineered specifically for automotive, industrial, and telecom infrastructure applications demanding robust 1500 W surge immunity and long-term stability under thermal cycling.

FAQ

What is the clamping voltage of SMCJ150AHE3_A/H at its rated peak pulse current?

The SMCJ150AHE3_A/H has a maximum clamping voltage (VC) of 243 V when subjected to its rated peak pulse current (IPPM) of 6.2 A under the standard 10/1000 µs waveform. This value is measured with the device mounted on 8.0 mm × 8.0 mm copper pads per JEDEC guidelines and defines the upper voltage limit imposed on protected circuitry during surge events. The SMCJ150AHE3_A/H maintains this clamping performance across its operational temperature range.

Is SMCJ150AHE3_A/H qualified for automotive applications?

Yes, SMCJ150AHE3_A/H is AEC-Q101 qualified, as indicated by the "HE3" suffix in its ordering code. This certification confirms successful completion of stress tests including high-temperature reverse bias (HTRB), high-temperature gate bias (HTGB), and temperature cycling (TCT), making it suitable for under-hood and chassis-mounted automotive systems. The SMCJ150AHE3_A/H meets the reliability and lifetime requirements defined in the AEC-Q101 standard for discrete semiconductors.

What does the "A/H" suffix mean in SMCJ150AHE3_A/H?

The "A/H" suffix in SMCJ150AHE3_A/H specifies packaging and reel configuration: "A" denotes the revision level (per Vishay's internal documentation), and "H" indicates the preferred package code for 7-inch diameter plastic tape and reel, with a base quantity of 850 units. This format is used for automated SMT placement and aligns with Vishay's standard ordering nomenclature for SMCJ series devices.

How does the thermal performance of SMCJ150AHE3_A/H affect PCB layout?

The SMCJ150AHE3_A/H has a typical junction-to-ambient thermal resistance (RθJA) of 75 °C/W, which assumes mounting on minimum recommended 8.0 mm × 8.0 mm copper pads per terminal. To achieve full 1500 W pulse rating, PCB layout must provide adequate copper area and thermal vias; reducing pad size increases RθJA and requires derating per Figure 2 in the datasheet. The SMCJ150AHE3_A/H thermal design must account for ambient temperature and adjacent heat sources to maintain TJ ≤ 150 °C.

Can SMCJ150AHE3_A/H be used in bidirectional signal protection?

No, SMCJ150AHE3_A/H is a unidirectional TVS diode, identified by the "A" (not "CA") suffix and marked with a cathode band. It conducts only during positive transients relative to its anode. For bidirectional protection-such as on AC-coupled data lines like RS-485 or CAN-the correct variant is SMCJ150CAHE3_A/H. Using SMCJ150AHE3_A/H in bidirectional applications risks failure during negative surges, as it lacks reverse conduction capability. Always match polarity designation to circuit topology.