Vishay General Semiconductor - Diodes Division SMCJ18A-E3/57T
- Part No.:
- SMCJ18A-E3/57T
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AB, SMC
- Datasheet:
-
SMCJ18A-E3/57T.pdf
- Description:
- TVS DIODE 18VWM 29.2VC DO214AB
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
SMCJ18A-E3/57T from Vishay General Semiconductor is a unidirectional surface-mount Transient Voltage Suppressor (TVS) diode in SMC (DO-214AB) package, designed for robust overvoltage protection of DC power rails and signal lines. It features a 18 V standoff voltage (VWM), 20.0–22.1 V breakdown voltage (VBR) at 1 mA, 29.2 V clamping voltage (VC) at 51.4 A peak pulse current (IPPM), and 1500 W peak pulse power (PPPM) with 10/1000 μs waveform - deployed in automotive power supply inputs and industrial sensor interfaces.
For engineers reviewing the SMCJ18A-E3/57T datasheet, SMCJ18A-E3/57T pinout, SMCJ18A-E3/57T application, or SMCJ18A-E3/57T equivalent, key selection criteria include clamping performance under 51.4 A surge, thermal resistance (RθJA = 75 °C/W), unidirectional polarity marking (cathode band), RoHS-compliant matte tin plating, and AEC-Q101 qualification eligibility via HE3 suffix variants.
Technical Context
The SMCJ18A-E3/57T operates as a silicon avalanche diode with glass-passivated junction, delivering sub-nanosecond response to transients induced by inductive switching or ESD. Its low incremental surge resistance ensures minimal voltage overshoot during 10/1000 μs surges up to 1500 W, while its 1.0 μA max reverse leakage at 18 V supports low-power standby integrity.
Mounted on 8.0 mm × 8.0 mm copper pads per terminal, it achieves 75 °C/W junction-to-ambient thermal resistance and supports continuous power dissipation of 6.5 W at TA = 50 °C. The device meets MSL Level 1 (JEDEC J-STD-020) and is rated for TJ = –55 °C to +150 °C operation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM (Stand-off Voltage) | 18 V - Maximum continuous reverse voltage before significant leakage; defines operating rail margin for 24 V systems. |
| VBR (Breakdown Voltage) | 20.0–22.1 V at 1 mA - Avalanche onset range; ensures reliable triggering above normal operating voltage. |
| VC (Clamping Voltage) | 29.2 V at IPPM = 51.4 A - Peak voltage seen by protected circuit during 10/1000 μs surge; limits stress on downstream ICs. |
| PPPM (Peak Pulse Power) | 1500 W - Surge energy handling capacity; enables protection against IEC 61000-4-5 Level 4 (4 kV/2 Ω) transients. |
| IPPM (Peak Pulse Current) | 51.4 A - Maximum non-repetitive surge current supported; determines minimum series impedance required. |
| TJ max. | +150 °C - Maximum junction temperature; allows operation in under-hood automotive environments. |
| RθJA | 75 °C/W - Thermal resistance to ambient; requires ≥8 mm × 8 mm copper pad per lead for full power rating. |
Pinout & Package
Package: SMC (DO-214AB), surface-mount, low-profile case with matte tin-plated leads solderable per J-STD-002 and JESD 22-B102. Polarity indicated by cathode band on unidirectional devices.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Current entry point in forward bias; connected to lower-potential side of protected line | Enables conduction during reverse transient when cathode is at higher potential; must be routed to ground or return path. |
| Cathode | Current exit point in forward bias; marked with band; connected to protected line | Provides low-impedance shunt path to ground during overvoltage events; placement adjacent to IC power pin minimizes inductance. |
Key Features
| Feature | Design Value |
|---|---|
| 1500 W peak pulse power | Supports high-energy transients (e.g., ISO 7637-2 Pulse 5a) without degradation in automotive ECUs. |
| 29.2 V clamping at 51.4 A | Keeps protected 24 V logic rails below 30 V during surge, preserving MCU and CAN transceiver functionality. |
| MSL Level 1 moisture sensitivity | Enables direct placement without baking; compatible with standard SMT reflow profiles up to 260 °C peak. |
| Glass-passivated junction | Ensures stable VBR over lifetime and immunity to humidity-induced parameter drift in industrial enclosures. |
| RoHS-compliant, matte tin plating | Guarantees solderability and whisker resistance (JESD 201 Class 2) for long-term reliability in automated assembly. |
Applications
| Automotive Power Input Protection | Industrial Sensor Signal Line Protection |
|---|---|
|
Use Scenario: 24 V battery-fed control module exposed to load dump (ISO 7637-2 Pulse 5a) and alternator ripple. IC Role / Device Role / Timing Role: Unidirectional TVS clamping transient energy before it reaches LDO regulator input. Use Value: Limits input voltage to ≤29.2 V during 51.4 A surge, preventing LDO thermal shutdown and maintaining MCU uptime. |
Use Scenario: 4–20 mA current loop interface in factory automation PLC I/O modules subjected to field wiring ESD. IC Role / Device Role / Timing Role: Fast-response shunt protector placed across analog input terminals. Use Value: Clamps 8 kV contact ESD (IEC 61000-4-2) within <1 ns, preserving 16-bit ADC accuracy and avoiding system reset. |
| Telecom DC Power Rail Protection | Consumer Device USB Port Protection |
|
Use Scenario: -48 V telecom rectifier output feeding backplane distribution with lightning-induced surges. IC Role / Device Role / Timing Role: Primary overvoltage clamp on secondary-side DC bus before DC/DC converters. Use Value: Absorbs 1500 W surge energy without failure, enabling compliance with GR-1089-CORE Level 3 surge immunity. |
Use Scenario: VBUS line in portable media player exposed to hot-plug transients and human-body-model ESD. IC Role / Device Role / Timing Role: Standoff-rated TVS placed between USB connector and USB controller VDD. Use Value: Maintains 18 V standoff while clamping to 29.2 V, protecting 5 V tolerant PHY without affecting enumeration timing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ18A-E3/57T | Lower PPPM (400 W), smaller SMA package (DO-214AC), higher RθJA (110 °C/W) | Restricted to lower-energy transients (e.g., IEC 61000-4-2 only); unsuitable for load dump. | Select when board space is constrained and surge energy is ≤400 W. |
| SMCJ18CA-E3/57T | Bidirectional variant; same VWM (18 V), symmetric clamping in both polarities; no polarity marking | Required for AC-coupled or floating signal lines (e.g., RS-485, CAN FD differential pairs). | Choose for bidirectional protection where reverse polarity transients are possible. |
Compared with SMAJ18A-E3/57T, the SMCJ18A-E3/57T delivers 275 % more surge power and better thermal management; versus SMCJ18CA-E3/57T, it offers optimized unidirectional clamping with cathode-defined grounding, reducing layout complexity in DC rail protection.
Availability
SMCJ18A-E3/57T is available at Aetrix Electronics and suitable for automotive electronic control units, industrial programmable logic controllers, telecom power distribution systems, and consumer USB power delivery circuits requiring stable component supply and long-term lifecycle support.
Supply support for SMCJ18A-E3/57T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, MOSFETs, optoelectronics, and passive components with emphasis on reliability, power efficiency, and AEC-Q qualification.
The SMCJ series is part of Vishay's TRANSZORB® TVS platform, engineered specifically for high-energy transient suppression in harsh environments including automotive, industrial, and telecom infrastructure.
FAQ
What is the clamping voltage of the SMCJ18A-E3/57T at its rated peak pulse current?
The SMCJ18A-E3/57T has a maximum clamping voltage (VC) of 29.2 V at 51.4 A peak pulse current (IPPM) with a 10/1000 μs waveform. This value is measured under standardized test conditions per ANSI/IEEE C62.35 and defines the upper voltage limit imposed on protected circuitry during surge events. The SMCJ18A-E3/57T maintains this clamping performance across its specified operating temperature range.
Is the SMCJ18A-E3/57T suitable for automotive applications requiring AEC-Q101 qualification?
The SMCJ18A-E3/57T itself is the commercial-grade RoHS-compliant variant (E3 suffix); however, Vishay offers the functionally identical SMCJ18A-HE3_X variant which is AEC-Q101 qualified. For automotive designs requiring formal qualification, the HE3 suffix version must be specified. The SMCJ18A-E3/57T shares identical electrical characteristics and package dimensions with its HE3 counterpart, enabling drop-in layout reuse.
How does the SMCJ18A-E3/57T differ from the bidirectional SMCJ18CA-E3/57T?
The SMCJ18A-E3/57T is unidirectional with cathode-band polarity marking and conducts only during reverse-biased overvoltage events, whereas the SMCJ18CA-E3/57T is bidirectional with symmetrical clamping in both directions and no polarity marking. Both share identical VWM (18 V), PPPM (1500 W), and package (SMC), but the SMCJ18A-E3/57T is preferred for DC rail protection where polarity is fixed, simplifying grounding and layout.
What is the recommended PCB pad layout for optimal thermal performance of the SMCJ18A-E3/57T?
Vishay specifies a minimum 0.31" × 0.31" (8.0 mm × 8.0 mm) copper pad area for each terminal to achieve the rated 1500 W peak pulse power and 75 °C/W thermal resistance. These pads must be directly connected to internal ground/power planes via multiple thermal vias. Deviation from this layout reduces surge capability and increases junction temperature - the SMCJ18A-E3/57T must not be used at full PPPM without adherence to this mounting requirement.
Does the SMCJ18A-E3/57T have a specified junction capacitance for high-speed signal line protection?
No - junction capacitance is not specified for the SMCJ18A-E3/57T in the official Vishay datasheet (Document Number: 88394). Capacitance data is provided only for lower-voltage SMCJ variants (e.g., SMCJ5.0A) in Figure 4. For high-speed signal protection (e.g., USB 2.0, CAN), designers should select TVS devices with published CJ values or verify capacitance experimentally; the SMCJ18A-E3/57T is optimized for power rail and medium-speed analog line protection, not RF or high-frequency digital signals.
SMCJ18A-E3/57T Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AB, SMC
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 18V
- Voltage - Breakdown (Min):
- 20V
- Voltage - Clamping (Max) @ Ipp:
- 29.2V
- Current - Peak Pulse (10/1000µs):
- 51.4A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AB (SMCJ)
SMCJ18A-E3/57T FAQ
1.How can I place an order for SMCJ18A-E3/57T through Aetrix?
Please submit a Request for Quotation (RFQ) for SMCJ18A-E3/57T on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMCJ18A-E3/57T reliable?
The price and inventory of SMCJ18A-E3/57T are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMCJ18A-E3/57T is usually 5 days.
3.What payment methods are accepted for SMCJ18A-E3/57T?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMCJ18A-E3/57T transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMCJ18A-E3/57T?
SMCJ18A-E3/57T orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMCJ18A-E3/57T order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMCJ18A-E3/57T?
For technical support, including SMCJ18A-E3/57T datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMCJ18A-E3/57T requirements.
6.How does Aetrix verify that SMCJ18A-E3/57T is sourced from the original manufacturer or authorized distributors?
All SMCJ18A-E3/57T products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMCJ18A-E3/57T meets industry standards.
7.What is the process for return or replacement of SMCJ18A-E3/57T?
All SMCJ18A-E3/57T units undergo pre-shipment inspection (PSI). If there is an issue with SMCJ18A-E3/57T, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMCJ18A-E3/57T part is unused and in its original packaging.
Return procedure for SMCJ18A-E3/57T:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMCJ18A-E3/57T Tags

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DESD3V3E1BL-7B
Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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onsemi

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Diodes Incorporated

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D12V0L1B2LP-7B
Diodes Incorporated

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Nexperia USA Inc.

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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