Vishay General Semiconductor - Diodes Division SMCJ22A-M3/57T
- Part No.:
- SMCJ22A-M3/57T
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AB, SMC
- Datasheet:
-
SMCJ22A-M3/57T.pdf
- Description:
- TVS DIODE 22VWM 35.5VC DO214AB
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
SMCJ22A-M3/57T from Vishay General Semiconductor is a unidirectional surface-mount Transient Voltage Suppressor (TVS) diode in SMC (DO-214AB) package, designed for robust clamping of voltage transients on power and signal lines. It features a 22 V standoff voltage (VWM), 24.4–26.9 V breakdown voltage (VBR) at 1 mA, 35.5 V maximum clamping voltage (VC) at 42.3 A peak pulse current (IPPM), and 1500 W peak pulse power (PPPM) with 10/1000 µs waveform - used to protect MOSFETs, ICs, and sensor interfaces in automotive and industrial power supplies.
For engineers reviewing the SMCJ22A-M3/57T datasheet, SMCJ22A-M3/57T pinout, SMCJ22A-M3/57T application, or SMCJ22A-M3/57T equivalent, this part delivers verified transient suppression for 24 V DC systems, supports automated SMT placement, meets MSL level 1, and offers halogen-free RoHS compliance per Vishay's M3 suffix specification.
Technical Context
The SMCJ22A-M3/57T operates as a unidirectional avalanche diode with glass-passivated junction, enabling sub-nanosecond response to ESD and surge events. Its clamping behavior is defined by low incremental surge resistance and stable thermal performance up to 150 °C junction temperature, with derating applied above 25 °C ambient per Figure 2.
It is rated for non-repetitive 8.3 ms half-sine surge current up to 200 A (IFSM), and exhibits 0.096 %/°C temperature coefficient of VBR - ensuring predictable breakdown shift across operating temperature range. The device is mounted on 8.0 mm × 8.0 mm copper pads per JEDEC standard test conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM (Stand-off Voltage) | 22 V - Maximum continuous reverse voltage before significant leakage; defines safe operating margin below clamping threshold. |
| VBR (Breakdown Voltage) | 24.4–26.9 V at 1 mA - Confirmed avalanche initiation range; ensures reliable turn-on during overvoltage events. |
| VC (Clamping Voltage) | 35.5 V at 42.3 A (10/1000 µs) - Peak voltage seen by protected circuit under full-rated surge; critical for downstream component survivability. |
| PPPM (Peak Pulse Power) | 1500 W - Surge energy handling capability under standardized 10/1000 µs waveform; enables protection against IEC 61000-4-5 Level 4 surges. |
| ID (Reverse Leakage) | 1.0 µA max at 22 V - Ultra-low leakage preserves system efficiency and prevents false triggering in high-impedance circuits. |
| TJ max | 150 °C - Maximum junction temperature rating; supports operation in under-hood automotive and industrial environments. |
| RθJA | 75 °C/W - Thermal resistance from junction to ambient; informs heatsinking requirements when operating near PD = 6.5 W limit. |
Pinout & Package
Package: SMC (DO-214AB), surface-mount, low-profile plastic case with matte tin-plated leads solderable per J-STD-002 and JESD 22-B102. Polarity indicated by cathode band; unidirectional configuration only.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Cathode (banded end) | Anode-side connection point | Connected to protected line (e.g., 24 V rail); reverse-biased during normal operation; conducts during overvoltage to clamp to VC. |
| Anode (non-banded end) | GND or return path | Typically tied to system ground or low-impedance return; completes clamping path during transient event. |
Key Features
| Feature | Design Value |
|---|---|
| Halogen-free, RoHS-compliant construction | M3 suffix confirms compliance with environmental regulations without compromising surge robustness or thermal stability. |
| MSL Level 1 moisture sensitivity | Enables standard SMT reflow without baking; compatible with lead-free assembly up to 260 °C peak temperature. |
| Low incremental surge resistance | Ensures minimal voltage overshoot during fast transients, improving protection fidelity for sensitive 3.3 V/5 V logic interfaces. |
| AEC-Q101 qualification available (HM3 variant) | While SMCJ22A-M3/57T is commercial grade, HM3 variants are qualified for automotive applications - enabling direct BOM migration. |
| 1500 W peak pulse power (10/1000 µs) | Validated clamping performance under IEC 61000-4-5 surge test conditions, supporting industrial and transportation equipment certification. |
Applications
| Automotive Body Control Module (BCM) | Industrial PLC Digital Input Protection |
|---|---|
Use Scenario: Protecting 24 V supply inputs of BCM microcontrollers from load-dump and inductive switching transients. IC Role / Device Role / Timing Role: Unidirectional TVS placed between battery rail and LDO input to clamp surges before regulation. Use Value: Limits voltage to ≤35.5 V during 1500 W transients, preventing latch-up or permanent damage to 5 V tolerant MCU pins. |
Use Scenario: Safeguarding 24 V digital input channels of programmable logic controllers against field-wiring induced surges. IC Role / Device Role / Timing Role: Front-end transient suppressor on optocoupler input side, shunting surge energy to ground. Use Value: Maintains <1 µA leakage at 22 V, avoiding false triggering while clamping 42.3 A pulses within 1 ns response window. |
| Telecom Power Supply Interface | Motor Drive Gate Driver Protection |
Use Scenario: Shielding DC-DC converter inputs in telecom base station power modules from lightning-induced surges on -48 V distribution rails. IC Role / Device Role / Timing Role: Primary surge arrestor on input bulk capacitor node, coordinated with upstream fuses and filters. Use Value: Withstands repeated 10/1000 µs surges up to 1500 W without degradation, meeting GR-1089-CORE Level 3 immunity. |
Use Scenario: Clamping gate-source voltage spikes on N-channel MOSFET drivers in BLDC motor inverters. IC Role / Device Role / Timing Role: Connected between gate and source terminals to suppress Miller-induced dv/dt spikes during switching. Use Value: Fast avalanche response (<1 ns) limits VGS excursion to ≤35.5 V, preventing gate oxide rupture in 600 V Si MOSFETs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ22A-E3/57T | Lower PPPM (400 W), smaller SMA package (DO-214AC), higher RθJA (110 °C/W). | Restricted to lower-energy transients; unsuitable for IEC 61000-4-5 Level 4 or automotive load-dump. | Select when board space is constrained and surge threat level is limited to ESD or low-energy switching noise. |
| SMCJ22CA-M3/57T | Bidirectional version; identical VWM (22 V), VBR (24.4–26.9 V), VC (35.5 V), and PPPM (1500 W). | Required for AC-coupled or dual-polarity signal lines (e.g., RS-485, CAN bus); no polarity marking. | Choose for bidirectional protection where line reversal or AC transients exist - same footprint, no layout change needed. |
Compared with SMAJ22A-E3/57T, SMCJ22A-M3/57T provides 3.75× higher surge power handling and superior thermal dissipation; versus SMCJ22CA-M3/57T, it offers optimized unidirectional clamping for DC rails with explicit polarity control.
Availability
SMCJ22A-M3/57T is available at Aetrix Electronics and suitable for automotive body electronics, industrial PLC I/O modules, and telecom power interface designs requiring stable component supply, halogen-free compliance, and repeatable surge immunity performance.
Supply support for SMCJ22A-M3/57T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, precision, and application-specific optimization.
The SMCJ series was developed for high-energy transient suppression in harsh environments - targeting automotive, industrial, and telecom systems where robustness, consistency, and regulatory compliance are mandatory.
FAQ
What is the maximum clamping voltage of the SMCJ22A-M3/57T under a 10/1000 µs surge?
The SMCJ22A-M3/57T has a maximum clamping voltage (VC) of 35.5 V when subjected to its rated peak pulse current of 42.3 A with a 10/1000 µs waveform. This value is measured per JEDEC standards on specified 8.0 mm × 8.0 mm copper pads and defines the upper voltage limit imposed on protected circuitry during surge events. The SMCJ22A-M3/57T maintains this clamping performance consistently across its operational temperature range.
Is the SMCJ22A-M3/57T suitable for automotive applications?
The SMCJ22A-M3/57T is a commercial-grade part with halogen-free RoHS compliance (M3 suffix), but it is not AEC-Q101 qualified. For automotive use, Vishay offers the SMCJ22A-HM3/57T variant - identical electrical specs and package, but with AEC-Q101 qualification and enhanced process controls. The SMCJ22A-M3/57T may be used in non-safety-critical automotive subsystems where qualification is not mandated, but design validation remains the customer's responsibility.
How does the SMCJ22A-M3/57T differ from the SMCJ22CA-M3/57T?
The SMCJ22A-M3/57T is unidirectional, with a cathode band indicating polarity and optimized for DC line protection; the SMCJ22CA-M3/57T is bidirectional, lacking polarity marking and intended for AC or reversible signal paths like RS-485 or CAN. Both share identical VWM (22 V), VBR (24.4–26.9 V), VC (35.5 V), and PPPM (1500 W), and are mechanically interchangeable in SMC (DO-214AB) footprint.
What is the thermal resistance and power derating behavior of the SMCJ22A-M3/57T?
The SMCJ22A-M3/57T has a typical junction-to-ambient thermal resistance (RθJA) of 75 °C/W when mounted on minimum recommended pad layout. Its steady-state power dissipation (PD) is rated at 6.5 W at TA = 50 °C, with linear derating above that temperature per Figure 2 in the datasheet. At 125 °C ambient, PD drops to approximately 1.6 W - critical for thermal design in enclosed enclosures or high-temperature environments.
Does the SMCJ22A-M3/57T require special PCB layout considerations?
Yes - optimal surge performance requires mounting the SMCJ22A-M3/57T on 0.31" × 0.31" (8.0 mm × 8.0 mm) copper pads per terminal, as specified in the Vishay datasheet. Narrow traces or undersized pads increase impedance and reduce effective clamping, potentially causing failure during high-current transients. The SMCJ22A-M3/57T must be placed as close as possible to the protected node with minimal trace length to ground.
SMCJ22A-M3/57T Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AB, SMC
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 22V
- Voltage - Breakdown (Min):
- 24.4V
- Voltage - Clamping (Max) @ Ipp:
- 35.5V
- Current - Peak Pulse (10/1000µs):
- 42.3A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AB (SMC)
SMCJ22A-M3/57T FAQ
1.How can I place an order for SMCJ22A-M3/57T through Aetrix?
Please submit a Request for Quotation (RFQ) for SMCJ22A-M3/57T on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMCJ22A-M3/57T reliable?
The price and inventory of SMCJ22A-M3/57T are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMCJ22A-M3/57T is usually 5 days.
3.What payment methods are accepted for SMCJ22A-M3/57T?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMCJ22A-M3/57T transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMCJ22A-M3/57T?
SMCJ22A-M3/57T orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMCJ22A-M3/57T order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMCJ22A-M3/57T?
For technical support, including SMCJ22A-M3/57T datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMCJ22A-M3/57T requirements.
6.How does Aetrix verify that SMCJ22A-M3/57T is sourced from the original manufacturer or authorized distributors?
All SMCJ22A-M3/57T products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMCJ22A-M3/57T meets industry standards.
7.What is the process for return or replacement of SMCJ22A-M3/57T?
All SMCJ22A-M3/57T units undergo pre-shipment inspection (PSI). If there is an issue with SMCJ22A-M3/57T, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMCJ22A-M3/57T part is unused and in its original packaging.
Return procedure for SMCJ22A-M3/57T:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMCJ22A-M3/57T Tags

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Nexperia USA Inc.

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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