My Inquiry
My Account
Vishay General Semiconductor - Diodes Division SMCJ30A-E3/9AT
- Part No.:
- SMCJ30A-E3/9AT
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AB, SMC
- Datasheet:
-
SMCJ30A-E3/9AT.pdf
- Description:
- TVS DIODE 30VWM 48.4VC DO214AB
- Quantity:
- Payment:
- Shipping:
Inventory:5,270
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SMCJ30A-E3/9AT from Vishay General Semiconductor is a unidirectional surface-mount Transient Voltage Suppressor (TVS) diode in SMC (DO-214AB) package, designed for clamping voltage transients on power and signal lines. It features a 30 V standoff voltage (VWM), 33.3–36.8 V breakdown voltage (VBR), 48.4 V clamping voltage (VC) at 31 A peak pulse current (IPPM), and 1500 W peak pulse power (PPPM) with 10/1000 µs waveform - used to protect MOSFETs, ICs, and sensor interfaces in automotive and industrial power supplies.
For engineers reviewing the SMCJ30A-E3/9AT datasheet, SMCJ30A-E3/9AT pinout, SMCJ30A-E3/9AT application, or SMCJ30A-E3/9AT equivalent, key selection criteria include unidirectional polarity, 1.0 µA max reverse leakage at 30 V, -55 °C to +150 °C operating junction temperature, RoHS-compliant matte tin-plated leads, and AEC-Q101 qualification eligibility via HE3 suffix variants.
Technical Context
The SMCJ30A-E3/9AT employs a glass-passivated silicon junction optimized for fast response (<1 ns) to ESD and surge events. Its low incremental surge resistance ensures stable clamping under repetitive 10/1000 µs transients, while thermal resistance of 75 °C/W (junction-to-ambient) supports operation up to 150 °C junction temperature when mounted on 8.0 mm × 8.0 mm copper pads.
Designed for automated SMT placement, it meets J-STD-020 MSL Level 1 (peak reflow 260 °C) and JESD201 Class 2 whisker resistance. Polarity is marked by a cathode band; bidirectional variants use CA suffix and omit marking.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 30 V - maximum continuous reverse working voltage before clamping begins |
| VBR min/max | 33.3 V / 36.8 V at 1.0 mA - guaranteed breakdown threshold range for reliable turn-on |
| VC @ IPPM | 48.4 V at 31 A - clamped voltage during 1500 W transient, limiting stress on downstream components |
| PPPM | 1500 W - peak pulse power handling per 10/1000 µs waveform, defining surge robustness |
| ID @ VWM | ≤1.0 µA - ultra-low leakage preserves efficiency in high-impedance bias or sensing circuits |
| TJ range | -55 °C to +150 °C - enables deployment in under-hood automotive and industrial environments |
| Package | SMC (DO-214AB) - industry-standard 2-pin surface-mount outline with 7.75 mm × 6.22 mm footprint |
Pinout & Package
SMCJ30A-E3/9AT uses the SMC (DO-214AB) package: a rectangular surface-mount case with coplanar matte tin-plated leads, 0.220–0.246 inch (5.59–6.22 mm) wide, 0.305–0.320 inch (7.75–8.13 mm) long, and 0.079–0.103 inch (2.06–2.62 mm) height. Cathode is marked by a visible band on the body.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Current entry terminal in forward conduction | Connected to lower-potential side (e.g., ground or return path) in unidirectional protection |
| Cathode | Current exit terminal; marked with band | Connected to protected line (e.g., 30 V rail); conducts during overvoltage to shunt energy to ground |
Key Features
| Feature | Design Value |
|---|---|
| Low-profile SMC package | Enables high-density PCB layouts and compatibility with standard SMT pick-and-place equipment |
| Glass-passivated junction | Ensures stable electrical characteristics and long-term reliability under thermal cycling and humidity |
| 1500 W peak pulse rating | Withstands IEC 61000-4-5 Level 4 surges (4 kV line-earth) without degradation |
| Fast response time | <1 ns turn-on allows suppression before sensitive ICs experience damaging overvoltage |
| RoHS-compliant E3 suffix | Meets global environmental regulations with matte tin plating solderable per J-STD-002 and JESD22-B102 |
Applications
| Automotive Power Rail Protection | Industrial Sensor Interface Protection |
|---|---|
Use Scenario: 12 V battery-fed ECUs exposed to load dump (ISO 7637-2 Pulse 5a) and alternator transients. IC Role / Device Role / Timing Role: Unidirectional TVS placed between power input and ground to clamp surges above 30 V. Use Value: Limits voltage to ≤48.4 V during 31 A transients, preventing damage to 3.3 V/5 V regulators and CAN transceivers. | Use Scenario: 4–20 mA current loop sensors in factory automation subject to ESD and cable-induced surges. IC Role / Device Role / Timing Role: TVS connected across sensor output terminals to absorb ±8 kV contact ESD (IEC 61000-4-2). Use Value: Sub-1 ns response and 1.0 µA leakage preserve analog accuracy while enabling fail-safe operation. |
| DC-DC Converter Input Protection | Motor Drive Gate Driver Protection |
Use Scenario: 24 V input to isolated buck converter in robotics control systems. IC Role / Device Role / Timing Role: SMCJ30A-E3/9AT installed upstream of input filter to suppress switching noise and inductive kickback. Use Value: 1500 W rating handles repetitive 10/1000 µs transients from nearby relay switching without derating. | Use Scenario: High-side N-channel MOSFET gate driver supply (15 V) in BLDC motor inverters. IC Role / Device Role / Timing Role: Clamps negative-going transients induced by Miller capacitance coupling during fast switching. Use Value: 30 V VWM matches typical gate drive rails; 48.4 V VC prevents gate oxide breakdown on 20 V-rated MOSFETs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ30A-E3/52T | Lower PPPM (600 W), SMB package (smaller footprint, higher RθJA = 110 °C/W) | Suitable only for lower-energy transients; limited thermal margin in high-ambient environments | Select when board space is constrained and surge threat level is ≤Level 3 (IEC 61000-4-5) |
| SMCJ30CA-E3/9AT | Bidirectional variant; same VWM/VBR/VC specs but symmetric clamping in both polarities | Required for AC-coupled or floating signal lines where polarity reversal occurs (e.g., RS-485, CAN FD) | Choose when protecting differential buses or ungrounded inputs where negative transients must also be suppressed |
Compared with SMBJ30A-E3/52T and SMCJ30CA-E3/9AT, the SMCJ30A-E3/9AT delivers optimal balance of 1500 W surge capacity, thermal performance, and unidirectional precision for DC power rail protection - making it preferred for automotive and industrial 30 V system designs where layout space permits SMC packaging.
Availability
SMCJ30A-E3/9AT is available at Aetrix Electronics and suitable for automotive ECUs, industrial sensor modules, DC-DC converter inputs, and motor drive gate driver protection requiring stable component supply and long-term manufacturability.
Supply support for SMCJ30A-E3/9AT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, ruggedness, and AEC-Q101 qualification.
The SMCJ series is part of Vishay's TRANSZORB® TVS platform, engineered specifically for high-energy transient suppression in automotive, industrial, and telecom infrastructure where robustness against ISO 7637-2 and IEC 61000-4-5 threats is mandatory.
FAQ
What is the clamping voltage of SMCJ30A-E3/9AT at its rated peak pulse current?
The SMCJ30A-E3/9AT has a maximum clamping voltage (VC) of 48.4 V at 31 A peak pulse current (IPPM), measured with a 10/1000 µs waveform. This value defines the upper voltage limit imposed on protected circuitry during surge events and is critical for ensuring downstream components like 5 V LDOs or 3.3 V microcontrollers remain within safe operating limits. The SMCJ30A-E3/9AT maintains this clamping performance across its full operating temperature range.
Is SMCJ30A-E3/9AT suitable for automotive applications?
Yes, SMCJ30A-E3/9AT is suitable for automotive applications as a unidirectional TVS diode. While the base E3 suffix denotes commercial-grade qualification, the SMCJ30A-E3/9AT belongs to the AEC-Q101-qualified SMCJ family - with automotive variants available under HE3/HM3 suffixes. Its 1500 W surge rating, -55 °C to +150 °C junction temperature range, and compliance with J-STD-020 MSL Level 1 make the SMCJ30A-E3/9AT appropriate for under-hood and body-control module designs when used per Vishay's recommended layout guidelines.
How does the SMCJ30A-E3/9AT differ from the bidirectional SMCJ30CA-E3/9AT?
The SMCJ30A-E3/9AT is unidirectional and features a cathode band marking; it conducts only when the cathode is more positive than the anode. In contrast, the SMCJ30CA-E3/9AT is bidirectional with no polarity marking and clamps transients of either polarity symmetrically. Both share identical VWM (30 V), VBR (33.3–36.8 V), VC (48.4 V), and PPPM (1500 W) ratings. The choice depends on circuit topology: SMCJ30A-E3/9AT is used on grounded DC rails, while SMCJ30CA-E3/9AT is selected for floating or AC-coupled lines like CAN or RS-485.
What is the maximum reverse leakage current for SMCJ30A-E3/9AT at its standoff voltage?
The maximum reverse leakage current (ID) for SMCJ30A-E3/9AT is 1.0 µA at its 30 V standoff voltage (VWM) and 25 °C ambient temperature. This ultra-low leakage ensures minimal power loss in always-on systems and avoids loading high-impedance sensor bias networks. Leakage increases with temperature but remains below 10 µA up to 85 °C, preserving design margin in industrial environments. The SMCJ30A-E3/9AT achieves this while maintaining 1500 W surge capability.
Does SMCJ30A-E3/9AT require a heatsink for standard operation?
No, the SMCJ30A-E3/9AT does not require an external heatsink for standard transient suppression operation because it is designed for non-repetitive, short-duration pulses (e.g., 10/1000 µs). Its thermal resistance junction-to-ambient (RθJA) is 75 °C/W when mounted on 8.0 mm × 8.0 mm copper pads - sufficient to dissipate 6.5 W continuous power (PD) without exceeding 150 °C junction temperature. For repetitive surges or high ambient temperatures (>70 °C), PCB copper area should be maximized per Vishay's recommended pad layout to maintain thermal safety margin for the SMCJ30A-E3/9AT.
SMCJ30A-E3/9AT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AB, SMC
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 30V
- Voltage - Breakdown (Min):
- 33.3V
- Voltage - Clamping (Max) @ Ipp:
- 48.4V
- Current - Peak Pulse (10/1000µs):
- 31A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AB (SMCJ)
SMCJ30A-E3/9AT FAQ
1.How can I place an order for SMCJ30A-E3/9AT through Aetrix?
Please submit a Request for Quotation (RFQ) for SMCJ30A-E3/9AT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMCJ30A-E3/9AT reliable?
The price and inventory of SMCJ30A-E3/9AT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMCJ30A-E3/9AT is usually 5 days.
3.What payment methods are accepted for SMCJ30A-E3/9AT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMCJ30A-E3/9AT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMCJ30A-E3/9AT?
SMCJ30A-E3/9AT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMCJ30A-E3/9AT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMCJ30A-E3/9AT?
For technical support, including SMCJ30A-E3/9AT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMCJ30A-E3/9AT requirements.
6.How does Aetrix verify that SMCJ30A-E3/9AT is sourced from the original manufacturer or authorized distributors?
All SMCJ30A-E3/9AT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMCJ30A-E3/9AT meets industry standards.
7.What is the process for return or replacement of SMCJ30A-E3/9AT?
All SMCJ30A-E3/9AT units undergo pre-shipment inspection (PSI). If there is an issue with SMCJ30A-E3/9AT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMCJ30A-E3/9AT part is unused and in its original packaging.
Return procedure for SMCJ30A-E3/9AT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMCJ30A-E3/9AT Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
