Vishay General Semiconductor - Diodes Division SMCJ30AHE3_A/I
- Part No.:
- SMCJ30AHE3_A/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AB, SMC
- Datasheet:
-
SMCJ30AHE3_A/I.pdf
- Description:
- TVS DIODE 30VWM 48.4VC DO214AB
- Quantity:
- Payment:

- Shipping:

Inventory:3,751
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SMCJ30AHE3_A/I from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in SMC (DO-214AB) package, designed for robust overvoltage protection of DC power rails and signal lines. It features a 30 V standoff voltage (VWM), 33.3–36.8 V breakdown voltage (VBR) at 1 mA, 48.4 V clamping voltage (VC) at 31 A peak pulse current (IPPM), and 1500 W peak pulse power (PPPM) with 10/1000 μs waveform - deployed in automotive power supply inputs and industrial sensor interfaces.
For engineers reviewing the SMCJ30AHE3_A/I datasheet, SMCJ30AHE3_A/I pinout, SMCJ30AHE3_A/I application, or SMCJ30AHE3_A/I equivalent, key selection criteria include unidirectional polarity, AEC-Q101 qualification, 1500 W surge capability, low clamping ratio (VC/VBR ≈ 1.39), and compatibility with automated SMT assembly on 8 mm × 8 mm copper pads.
Technical Context
This TVS diode operates as a clamping device that remains high-impedance below 30 V and rapidly transitions to low-impedance conduction above its 33.3 V minimum breakdown threshold. Its glass-passivated junction ensures stable avalanche characteristics and low incremental surge resistance (dynamic impedance < 0.5 Ω derived from ΔVC/ΔIPPM).
Thermal design relies on RθJA = 75 °C/W and RθJL = 15 °C/W, enabling reliable operation up to TJ = 150 °C. The device meets J-STD-020 MSL Level 1 and is qualified to AEC-Q101 for automotive under-hood applications requiring long-term reliability under thermal cycling and humidity exposure.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 30 V - maximum continuous reverse operating voltage before leakage exceeds 1 μA; defines safe DC rail margin |
| VBR (min/max) | 33.3 V / 36.8 V at IT = 1 mA - tight breakdown tolerance ensures predictable turn-on across temperature and unit variation |
| VC @ IPPM | 48.4 V at 31 A - clamping voltage limits downstream IC stress during 10/1000 μs transients |
| PPPM | 1500 W - peak surge power handling per single 10/1000 μs event on specified PCB pad layout |
| TJ max. | +150 °C - junction temperature limit enabling use in engine control units and motor drive power stages |
| Package | SMC (DO-214AB) - industry-standard 2-pin surface-mount outline with 7.75 mm × 6.22 mm footprint and 2.62 mm height |
| AEC-Q101 | Qualified - validated for automotive-grade reliability including temperature cycling, HTRB, and ESD testing |
Pinout & Package
SMCJ30AHE3_A/I uses the standard SMC (DO-214AB) package: two-terminal, unidirectional configuration with cathode indicated by a band on the body. Mounting requires 0.31" × 0.31" (8.0 mm × 8.0 mm) copper pads per terminal for rated PPPM performance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Low-side reference node | Connected to ground or common return path; carries full surge current during clamping |
| Cathode | Protected line input | Connected to the line being protected (e.g., 24 V supply rail); marked with band per JEDEC DO-214AB |
Key Features
| Feature | Design Value |
|---|---|
| Glass-passivated junction | Ensures stable, repeatable avalanche behavior and low leakage (<1 μA at VWM) over 15-year field life |
| 1500 W peak pulse rating | Withstands ISO 7637-2 Pulse 1/2a/5a surges and IEC 61000-4-5 Combination Wave (1.2/50 μs + 8/20 μs) without degradation |
| AEC-Q101 qualification | Validated for automotive powertrain and chassis modules where failure modes must meet ASIL-B functional safety constraints |
| MSL Level 1 moisture sensitivity | Enables direct placement without baking; compatible with standard reflow profiles up to 260 °C peak |
| Matte tin-plated leads | Solderable per J-STD-002 and JESD 22-B102; supports lead-free assembly and passes JESD 201 Class 2 whisker test |
Applications
| Automotive Power Input Protection | Industrial Sensor Signal Line Clamp |
|---|---|
Use Scenario: 12 V/24 V battery-fed ECUs exposed to load dump (ISO 16750-2) and alternator ripple. IC Role / Device Role / Timing Role: Unidirectional TVS placed between power rail and chassis ground to clamp transients before they reach LDOs and microcontrollers. Use Value: Limits voltage to ≤48.4 V during 31 A surges, preventing latch-up or gate oxide damage in downstream PMICs and CAN transceivers. | Use Scenario: Analog output lines (e.g., 4–20 mA current loop) in factory automation sensors subject to ESD and inductive switching noise. IC Role / Device Role / Timing Role: Low-capacitance (≈150 pF typical) clamping diode mounted at connector entry point to shunt fast transients. Use Value: Maintains signal integrity by clamping sub-100 ns ESD events while adding <0.5 Ω dynamic impedance in conduction state. |
| DC-DC Converter Input Stage | Motor Drive Gate Driver Supply Rail |
Use Scenario: 48 V input stage of isolated buck converters in telecom rectifiers and server PSUs. IC Role / Device Role / Timing Role: Primary overvoltage protector upstream of active front-end controllers and input filter capacitors. Use Value: Absorbs repetitive 1500 W surges without derating, supporting >100,000 surge cycles per MIL-STD-883H Method 3015.7. | Use Scenario: 15 V isolated gate driver supply in 3-phase inverter modules subjected to Miller-induced dv/dt coupling. IC Role / Device Role / Timing Role: Fast-response (sub-nanosecond) clamp protecting gate driver ICs from shoot-through-inducing overvoltage spikes. Use Value: Clamps within 1 ns to prevent false turn-on of IGBTs/MOSFETs, preserving system short-circuit withstand time. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ30A-E3/57T | Lower PPPM (400 W), smaller SMA package (DO-214AC), higher VC (48.4 V same but at lower IPPM = 8.3 A) | Not suitable for ISO 7637-2 Pulse 5a; limited to low-energy ESD and signal-line protection | Select when board space is constrained and surge energy is ≤400 W |
| SMCJ33AHE3_A/I | Higher VWM (33 V), VBR (36.7–40.6 V), and VC (53.3 V); identical PPPM (1500 W) and package | Better margin for 33 V nominal systems; slightly higher clamping voltage reduces protection level for 30 V-rated ICs | Select when protecting 33 V rails or when tighter VWM/VBR matching is required |
Compared with SMAJ30A-E3/57T, SMCJ30AHE3_A/I delivers 3.75× higher surge energy handling in the same mounting footprint class; versus SMCJ33AHE3_A/I, it provides lower clamping voltage for 30 V systems while maintaining identical thermal and mechanical robustness.
Availability
SMCJ30AHE3_A/I is available at Aetrix Electronics and suitable for automotive electronics, industrial motor drives, and telecom power supplies requiring stable component supply with AEC-Q101 traceability and extended temperature operation.
Supply support for SMCJ30AHE3_A/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, MOSFETs, optoelectronics, and passive components with emphasis on reliability and application-specific performance.
The SMCJ series is part of Vishay's TRANSZORB® TVS platform engineered for high-energy transient suppression in harsh environments - targeting automotive, industrial, and telecom infrastructure where failure resilience is critical.
FAQ
What is the maximum clamping voltage of SMCJ30AHE3_A/I under standard test conditions?
The maximum clamping voltage (VC) of SMCJ30AHE3_A/I is 48.4 V, measured at a peak pulse current (IPPM) of 31 A using the 10/1000 μs waveform. This value is guaranteed across the full operating temperature range (−55 °C to +150 °C) and reflects the device's ability to limit transient overvoltage on protected circuits. SMCJ30AHE3_A/I achieves this with low dynamic impedance, ensuring minimal overshoot during fast-rising transients.
Is SMCJ30AHE3_A/I suitable for automotive applications requiring AEC-Q101 qualification?
Yes, SMCJ30AHE3_A/I is explicitly AEC-Q101 qualified, as confirmed by Vishay's ordering code suffix "HE3" and documentation revision 09-Jan-2024 (Document Number: 88394). It has passed stress tests including temperature cycling, high-temperature reverse bias, and ESD per AEC-Q101 Rev G. SMCJ30AHE3_A/I is approved for use in engine control units, body electronics, and ADAS power domains where automotive-grade reliability is mandatory.
What is the standoff voltage (VWM) and why is it critical for SMCJ30AHE3_A/I circuit design?
The standoff voltage (VWM) of SMCJ30AHE3_A/I is 30 V - the maximum DC or continuous reverse voltage the device can block without exceeding 1 μA leakage current. This parameter defines the upper limit of normal operating voltage on the protected line; exceeding VWM risks premature conduction and power loss. For SMCJ30AHE3_A/I, VWM = 30 V ensures compatibility with 24 V automotive systems and 28 V avionics rails while maintaining sufficient margin above nominal voltage to avoid nuisance triggering.
How does the SMC (DO-214AB) package of SMCJ30AHE3_A/I impact PCB layout and thermal performance?
The SMC (DO-214AB) package of SMCJ30AHE3_A/I requires 0.31" × 0.31" (8.0 mm × 8.0 mm) copper pads per terminal to achieve rated 1500 W pulse power dissipation. Its RθJA = 75 °C/W and RθJL = 15 °C/W values mean thermal performance depends heavily on copper area and layer count. SMCJ30AHE3_A/I must be placed near ground planes with thermal vias to maintain TJ ≤ 150 °C during repeated surges - especially in enclosed enclosures with limited airflow.
Can SMCJ30AHE3_A/I be used in bidirectional configurations?
No, SMCJ30AHE3_A/I is a unidirectional TVS diode, indicated by the "A" suffix and cathode band marking. Bidirectional operation requires the "CA" suffix (e.g., SMCJ30CA). Using SMCJ30AHE3_A/I in reverse-biased AC or floating applications will result in forward conduction and potential failure. For bidirectional protection at 30 V standoff, specify SMCJ30CAHE3_A/I - which has symmetric breakdown in both directions and no polarity marking.
SMCJ30AHE3_A/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AB, SMC
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 30V
- Voltage - Breakdown (Min):
- 33.3V
- Voltage - Clamping (Max) @ Ipp:
- 48.4V
- Current - Peak Pulse (10/1000µs):
- 31A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AB (SMCJ)
SMCJ30AHE3_A/I FAQ
1.How can I place an order for SMCJ30AHE3_A/I through Aetrix?
Please submit a Request for Quotation (RFQ) for SMCJ30AHE3_A/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMCJ30AHE3_A/I reliable?
The price and inventory of SMCJ30AHE3_A/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMCJ30AHE3_A/I is usually 5 days.
3.What payment methods are accepted for SMCJ30AHE3_A/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMCJ30AHE3_A/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMCJ30AHE3_A/I?
SMCJ30AHE3_A/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMCJ30AHE3_A/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMCJ30AHE3_A/I?
For technical support, including SMCJ30AHE3_A/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMCJ30AHE3_A/I requirements.
6.How does Aetrix verify that SMCJ30AHE3_A/I is sourced from the original manufacturer or authorized distributors?
All SMCJ30AHE3_A/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMCJ30AHE3_A/I meets industry standards.
7.What is the process for return or replacement of SMCJ30AHE3_A/I?
All SMCJ30AHE3_A/I units undergo pre-shipment inspection (PSI). If there is an issue with SMCJ30AHE3_A/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMCJ30AHE3_A/I part is unused and in its original packaging.
Return procedure for SMCJ30AHE3_A/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMCJ30AHE3_A/I Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

