Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay General Semiconductor - Diodes Division SMCJ30AHE3_A/I

Part No.:
SMCJ30AHE3_A/I
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
DO-214AB, SMC
Datasheet:
AetrixSMCJ30AHE3_A/I.pdf
Description:
TVS DIODE 30VWM 48.4VC DO214AB
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,751

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

SMCJ30AHE3_A/I from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in SMC (DO-214AB) package, designed for robust overvoltage protection of DC power rails and signal lines. It features a 30 V standoff voltage (VWM), 33.3–36.8 V breakdown voltage (VBR) at 1 mA, 48.4 V clamping voltage (VC) at 31 A peak pulse current (IPPM), and 1500 W peak pulse power (PPPM) with 10/1000 μs waveform - deployed in automotive power supply inputs and industrial sensor interfaces.

For engineers reviewing the SMCJ30AHE3_A/I datasheet, SMCJ30AHE3_A/I pinout, SMCJ30AHE3_A/I application, or SMCJ30AHE3_A/I equivalent, key selection criteria include unidirectional polarity, AEC-Q101 qualification, 1500 W surge capability, low clamping ratio (VC/VBR ≈ 1.39), and compatibility with automated SMT assembly on 8 mm × 8 mm copper pads.

Technical Context

This TVS diode operates as a clamping device that remains high-impedance below 30 V and rapidly transitions to low-impedance conduction above its 33.3 V minimum breakdown threshold. Its glass-passivated junction ensures stable avalanche characteristics and low incremental surge resistance (dynamic impedance < 0.5 Ω derived from ΔVC/ΔIPPM).

Thermal design relies on RθJA = 75 °C/W and RθJL = 15 °C/W, enabling reliable operation up to TJ = 150 °C. The device meets J-STD-020 MSL Level 1 and is qualified to AEC-Q101 for automotive under-hood applications requiring long-term reliability under thermal cycling and humidity exposure.

Key Specifications

ParameterValue and Actual Design Meaning
VWM30 V - maximum continuous reverse operating voltage before leakage exceeds 1 μA; defines safe DC rail margin
VBR (min/max)33.3 V / 36.8 V at IT = 1 mA - tight breakdown tolerance ensures predictable turn-on across temperature and unit variation
VC @ IPPM48.4 V at 31 A - clamping voltage limits downstream IC stress during 10/1000 μs transients
PPPM1500 W - peak surge power handling per single 10/1000 μs event on specified PCB pad layout
TJ max.+150 °C - junction temperature limit enabling use in engine control units and motor drive power stages
PackageSMC (DO-214AB) - industry-standard 2-pin surface-mount outline with 7.75 mm × 6.22 mm footprint and 2.62 mm height
AEC-Q101Qualified - validated for automotive-grade reliability including temperature cycling, HTRB, and ESD testing

Pinout & Package

SMCJ30AHE3_A/I uses the standard SMC (DO-214AB) package: two-terminal, unidirectional configuration with cathode indicated by a band on the body. Mounting requires 0.31" × 0.31" (8.0 mm × 8.0 mm) copper pads per terminal for rated PPPM performance.

Pin/TerminalCircuit RoleDesign Meaning
AnodeLow-side reference nodeConnected to ground or common return path; carries full surge current during clamping
CathodeProtected line inputConnected to the line being protected (e.g., 24 V supply rail); marked with band per JEDEC DO-214AB

Key Features

FeatureDesign Value
Glass-passivated junctionEnsures stable, repeatable avalanche behavior and low leakage (<1 μA at VWM) over 15-year field life
1500 W peak pulse ratingWithstands ISO 7637-2 Pulse 1/2a/5a surges and IEC 61000-4-5 Combination Wave (1.2/50 μs + 8/20 μs) without degradation
AEC-Q101 qualificationValidated for automotive powertrain and chassis modules where failure modes must meet ASIL-B functional safety constraints
MSL Level 1 moisture sensitivityEnables direct placement without baking; compatible with standard reflow profiles up to 260 °C peak
Matte tin-plated leadsSolderable per J-STD-002 and JESD 22-B102; supports lead-free assembly and passes JESD 201 Class 2 whisker test

Applications

Automotive Power Input ProtectionIndustrial Sensor Signal Line Clamp

Use Scenario: 12 V/24 V battery-fed ECUs exposed to load dump (ISO 16750-2) and alternator ripple.

IC Role / Device Role / Timing Role: Unidirectional TVS placed between power rail and chassis ground to clamp transients before they reach LDOs and microcontrollers.

Use Value: Limits voltage to ≤48.4 V during 31 A surges, preventing latch-up or gate oxide damage in downstream PMICs and CAN transceivers.

Use Scenario: Analog output lines (e.g., 4–20 mA current loop) in factory automation sensors subject to ESD and inductive switching noise.

IC Role / Device Role / Timing Role: Low-capacitance (≈150 pF typical) clamping diode mounted at connector entry point to shunt fast transients.

Use Value: Maintains signal integrity by clamping sub-100 ns ESD events while adding <0.5 Ω dynamic impedance in conduction state.

DC-DC Converter Input StageMotor Drive Gate Driver Supply Rail

Use Scenario: 48 V input stage of isolated buck converters in telecom rectifiers and server PSUs.

IC Role / Device Role / Timing Role: Primary overvoltage protector upstream of active front-end controllers and input filter capacitors.

Use Value: Absorbs repetitive 1500 W surges without derating, supporting >100,000 surge cycles per MIL-STD-883H Method 3015.7.

Use Scenario: 15 V isolated gate driver supply in 3-phase inverter modules subjected to Miller-induced dv/dt coupling.

IC Role / Device Role / Timing Role: Fast-response (sub-nanosecond) clamp protecting gate driver ICs from shoot-through-inducing overvoltage spikes.

Use Value: Clamps within 1 ns to prevent false turn-on of IGBTs/MOSFETs, preserving system short-circuit withstand time.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient suppression applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
SMAJ30A-E3/57TLower PPPM (400 W), smaller SMA package (DO-214AC), higher VC (48.4 V same but at lower IPPM = 8.3 A)Not suitable for ISO 7637-2 Pulse 5a; limited to low-energy ESD and signal-line protectionSelect when board space is constrained and surge energy is ≤400 W
SMCJ33AHE3_A/IHigher VWM (33 V), VBR (36.7–40.6 V), and VC (53.3 V); identical PPPM (1500 W) and packageBetter margin for 33 V nominal systems; slightly higher clamping voltage reduces protection level for 30 V-rated ICsSelect when protecting 33 V rails or when tighter VWM/VBR matching is required

Compared with SMAJ30A-E3/57T, SMCJ30AHE3_A/I delivers 3.75× higher surge energy handling in the same mounting footprint class; versus SMCJ33AHE3_A/I, it provides lower clamping voltage for 30 V systems while maintaining identical thermal and mechanical robustness.

Availability

SMCJ30AHE3_A/I is available at Aetrix Electronics and suitable for automotive electronics, industrial motor drives, and telecom power supplies requiring stable component supply with AEC-Q101 traceability and extended temperature operation.

Supply support for SMCJ30AHE3_A/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, MOSFETs, optoelectronics, and passive components with emphasis on reliability and application-specific performance.

The SMCJ series is part of Vishay's TRANSZORB® TVS platform engineered for high-energy transient suppression in harsh environments - targeting automotive, industrial, and telecom infrastructure where failure resilience is critical.

FAQ

What is the maximum clamping voltage of SMCJ30AHE3_A/I under standard test conditions?

The maximum clamping voltage (VC) of SMCJ30AHE3_A/I is 48.4 V, measured at a peak pulse current (IPPM) of 31 A using the 10/1000 μs waveform. This value is guaranteed across the full operating temperature range (−55 °C to +150 °C) and reflects the device's ability to limit transient overvoltage on protected circuits. SMCJ30AHE3_A/I achieves this with low dynamic impedance, ensuring minimal overshoot during fast-rising transients.

Is SMCJ30AHE3_A/I suitable for automotive applications requiring AEC-Q101 qualification?

Yes, SMCJ30AHE3_A/I is explicitly AEC-Q101 qualified, as confirmed by Vishay's ordering code suffix "HE3" and documentation revision 09-Jan-2024 (Document Number: 88394). It has passed stress tests including temperature cycling, high-temperature reverse bias, and ESD per AEC-Q101 Rev G. SMCJ30AHE3_A/I is approved for use in engine control units, body electronics, and ADAS power domains where automotive-grade reliability is mandatory.

What is the standoff voltage (VWM) and why is it critical for SMCJ30AHE3_A/I circuit design?

The standoff voltage (VWM) of SMCJ30AHE3_A/I is 30 V - the maximum DC or continuous reverse voltage the device can block without exceeding 1 μA leakage current. This parameter defines the upper limit of normal operating voltage on the protected line; exceeding VWM risks premature conduction and power loss. For SMCJ30AHE3_A/I, VWM = 30 V ensures compatibility with 24 V automotive systems and 28 V avionics rails while maintaining sufficient margin above nominal voltage to avoid nuisance triggering.

How does the SMC (DO-214AB) package of SMCJ30AHE3_A/I impact PCB layout and thermal performance?

The SMC (DO-214AB) package of SMCJ30AHE3_A/I requires 0.31" × 0.31" (8.0 mm × 8.0 mm) copper pads per terminal to achieve rated 1500 W pulse power dissipation. Its RθJA = 75 °C/W and RθJL = 15 °C/W values mean thermal performance depends heavily on copper area and layer count. SMCJ30AHE3_A/I must be placed near ground planes with thermal vias to maintain TJ ≤ 150 °C during repeated surges - especially in enclosed enclosures with limited airflow.

Can SMCJ30AHE3_A/I be used in bidirectional configurations?

No, SMCJ30AHE3_A/I is a unidirectional TVS diode, indicated by the "A" suffix and cathode band marking. Bidirectional operation requires the "CA" suffix (e.g., SMCJ30CA). Using SMCJ30AHE3_A/I in reverse-biased AC or floating applications will result in forward conduction and potential failure. For bidirectional protection at 30 V standoff, specify SMCJ30CAHE3_A/I - which has symmetric breakdown in both directions and no polarity marking.

SMCJ30AHE3_A/I Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
DO-214AB, SMC
Series:
TransZorb®
Packaging:
Tape & Reel (TR)
Product Status:
Active
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
30V
Voltage - Breakdown (Min):
33.3V
Voltage - Clamping (Max) @ Ipp:
48.4V
Current - Peak Pulse (10/1000µs):
31A
Power - Peak Pulse:
1500W (1.5kW)
Power Line Protection:
No
Applications:
-
Capacitance @ Frequency:
-
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
DO-214AB (SMCJ)

SMCJ30AHE3_A/I FAQ

1.How can I place an order for SMCJ30AHE3_A/I through Aetrix?

Please submit a Request for Quotation (RFQ) for SMCJ30AHE3_A/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SMCJ30AHE3_A/I reliable?

The price and inventory of SMCJ30AHE3_A/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMCJ30AHE3_A/I is usually 5 days.

3.What payment methods are accepted for SMCJ30AHE3_A/I?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMCJ30AHE3_A/I transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SMCJ30AHE3_A/I?

SMCJ30AHE3_A/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SMCJ30AHE3_A/I order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SMCJ30AHE3_A/I?

For technical support, including SMCJ30AHE3_A/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMCJ30AHE3_A/I requirements.

6.How does Aetrix verify that SMCJ30AHE3_A/I is sourced from the original manufacturer or authorized distributors?

All SMCJ30AHE3_A/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMCJ30AHE3_A/I meets industry standards.

7.What is the process for return or replacement of SMCJ30AHE3_A/I?

All SMCJ30AHE3_A/I units undergo pre-shipment inspection (PSI). If there is an issue with SMCJ30AHE3_A/I, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SMCJ30AHE3_A/I part is unused and in its original packaging.

Return procedure for SMCJ30AHE3_A/I:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SMCJ30AHE3_A/I Tags

  • SMCJ30AHE3_A/I
  • SMCJ30AHE3_A/I PDF
  • SMCJ30AHE3_A/I Datasheet
  • SMCJ30AHE3_A/I Specifications
  • SMCJ30AHE3_A/I Images
  • Vishay General Semiconductor - Diodes Division
  • Vishay General Semiconductor - Diodes Division SMCJ30AHE3_A/I
  • Buy SMCJ30AHE3_A/I
  • SMCJ30AHE3_A/I Price
  • SMCJ30AHE3_A/I Distributor
  • SMCJ30AHE3_A/I Supplier
  • SMCJ30AHE3_A/I Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER