Vishay General Semiconductor - Diodes Division SMCJ30CHE3/57T
- Part No.:
- SMCJ30CHE3/57T
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AB, SMC
- Datasheet:
-
SMCJ30CHE3/57T.pdf
- Description:
- TVS DIODE 30VWM 53.5VC DO214AB
- Quantity:
- Payment:

- Shipping:

Inventory:2,630
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Product details
Overview
SMCJ30CHE3/57T from Vishay General Semiconductor is a bi-directional transient voltage suppressor (TVS) diode in DO-214AB (SMCJ) package, designed for robust overvoltage protection of sensitive electronics. It features a 30 V stand-off voltage (VWM), 48.4 V maximum clamping voltage (VC) at 31.0 A peak pulse current (IPPM), and 1500 W peak pulse power dissipation (PPPM) with 10/1000 µs waveform - deployed in automotive sensor signal lines, industrial I/O ports, and DC power rails.
For engineers reviewing the SMCJ30CHE3/57T datasheet, SMCJ30CHE3/57T pinout, SMCJ30CHE3/57T application, or SMCJ30CHE3/57T equivalent, key selection criteria include its AEC-Q101 qualification, bi-directional surge capability, low incremental surge resistance, and RoHS-compliant HE3 whisker-tested terminations - critical for automotive-grade ESD and load-dump protection design.
Technical Context
The SMCJ30CHE3/57T operates as a bi-directional avalanche diode, clamping transients in both polarities without polarity marking. Its breakdown voltage (VBR) is specified between 33.3 V and 36.8 V at 1.0 mA test current, ensuring reliable turn-on before system damage occurs under fast-rising surges.
Thermally, it supports junction temperatures from –55 °C to +150 °C, with RθJA = 75 °C/W and RθJL = 15 °C/W, enabling stable operation on standard 8.0 mm × 8.0 mm copper pads. Its response time is sub-nanosecond, and it meets MSL Level 1 per J-STD-020 with 260 °C reflow peak.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 30 V - Maximum continuous reverse operating voltage before clamping begins |
| VBR min/max | 33.3 V / 36.8 V at 1.0 mA - Ensures consistent avalanche initiation across production lots |
| VC @ IPPM | 48.4 V at 31.0 A - Limits downstream voltage stress during 10/1000 µs transients |
| PPPM | 1500 W - Withstands high-energy surges such as ISO 7637-2 Pulse 1 & 2 (automotive) |
| ID @ VWM | 1.0 µA - Ultra-low leakage preserves signal integrity in high-impedance circuits |
| TJ range | –55 °C to +150 °C - Validated for under-hood automotive and industrial ambient conditions |
| Qualification | AEC-Q101 - Certified for automotive electronic modules requiring reliability validation |
Pinout & Package
Package: DO-214AB (SMCJ), surface-mount, bi-directional configuration with no polarity marking - leads are matte tin plated, solderable per J-STD-002 and JESD 22-B102, and meet JESD 201 Class 2 whisker test (HE3 suffix).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode/Cathode (symmetrical) | Bi-directional avalanche junction | No functional distinction - terminals interchangeable; clamps positive and negative transients equally |
| Lead 1 / Lead 2 | Device terminals | Connected to PCB copper pads (min. 8.0 mm × 8.0 mm each) for thermal and surge current conduction |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive electronics - enables use in ADAS sensors, body control modules, and infotainment power supplies |
| 1500 W peak pulse power | Handles high-energy transients like ISO 16750-2 load dump spikes without degradation |
| Low clamping ratio (VC/VBR ≈ 1.39) | Minimizes overvoltage margin - protects 3.3 V/5 V/12 V ICs with tight tolerance margins |
| MSL Level 1, 260 °C peak reflow | Compatible with standard lead-free SMT assembly without moisture sensitivity concerns |
| JESD 201 Class 2 whisker resistance | Prevents tin whisker growth in long-life automotive applications (>15 years) |
Applications
| Automotive Sensor Protection | Industrial I/O Port Protection |
|---|---|
Use Scenario: Protecting CAN/LIN bus transceivers and analog sensor outputs (e.g., pressure, temperature) from ESD and inductive switching noise in vehicle ECUs. IC Role / Device Role / Timing Role: Bi-directional TVS clamp placed directly at connector entry point to shunt transients before reaching signal conditioning circuitry. Use Value: Maintains signal fidelity under ±30 kV contact ESD (IEC 61000-4-2) and suppresses >100 V transients to <49 V at the IC pin. | Use Scenario: Safeguarding PLC digital input modules and fieldbus interfaces (RS-485, Profibus) against lightning-induced surges and ground loop transients. IC Role / Device Role / Timing Role: Primary overvoltage clamp on signal/power lines entering industrial enclosures, mounted adjacent to connectors. Use Value: Absorbs 1500 W surge energy while limiting clamped voltage to 48.4 V - compatible with 24 V nominal industrial systems. |
| DC Power Rail Protection | Consumer Device USB/Power Port Protection |
Use Scenario: Securing 12 V/24 V DC power inputs in automotive infotainment head units and telematics gateways against load dump events. IC Role / Device Role / Timing Role: Parallel-connected TVS across input rail to divert ISO 7637-2 Pulse 5a (load dump) energy away from downstream regulators and controllers. Use Value: Clamps 120 V load dump transients to ≤48.4 V within nanoseconds - prevents brownout and latch-up in PMICs and microcontrollers. | Use Scenario: Hardening USB Type-C and barrel jack power inputs in portable medical monitors and smart home hubs against user-induced ESD and hot-plug surges. IC Role / Device Role / Timing Role: First-line transient suppressor on external power path, placed before fuse and input capacitor. Use Value: Provides bi-directional clamping with <1 µA leakage at 30 V - avoids battery drain while meeting IEC 61000-4-2 Level 4 immunity. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ30CAHE3/52T | Lower PPPM (600 W), smaller SMB package (DO-214AA), same VWM and VC | Limited to lower-energy transients; unsuitable for ISO 7637-2 Pulse 5a load dump | Select when board space is constrained and surge energy is ≤600 W |
| SMCJ33CAHE3/57T | Higher VWM (33 V), VBR 36.7–40.6 V, VC 53.3 V - 10% higher clamping voltage | Better suited for 36 V nominal systems; trades off tighter clamping margin for higher stand-off | Choose for 33–36 V rails where 30 V VWM risks false triggering |
Compared with SMCJ30CHE3/57T, SMBJ30CAHE3/52T offers footprint reduction at the cost of surge handling capacity, while SMCJ33CAHE3/57T provides higher system voltage margin but increases protected IC's overvoltage exposure by ~5 V - requiring careful trade-off between false trigger risk and clamping safety margin.
Availability
SMCJ30CHE3/57T is available at Aetrix Electronics and suitable for automotive sensor protection, industrial I/O port hardening, and DC power rail surge suppression requiring stable component supply, AEC-Q101 compliance, and traceable RoHS sourcing.
Supply support for SMCJ30CHE3/57T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, power efficiency, and automotive-grade qualification.
The SMCJ series belongs to Vishay's TRANSZORB® TVS platform, engineered specifically for high-energy transient suppression in harsh environments - targeting automotive, industrial, and telecom infrastructure applications demanding AEC-Q101 validation and repeatable clamping performance.
FAQ
What is the clamping voltage of the SMCJ30CHE3/57T under maximum rated surge current?
The SMCJ30CHE3/57T has a maximum clamping voltage (VC) of 48.4 V at 31.0 A peak pulse current (IPPM) with a 10/1000 µs waveform. This value is measured per ANSI/IEEE C62.35 standards and ensures predictable overvoltage limiting during standardized surge events - critical for protecting downstream 3.3 V, 5 V, and 12 V ICs in the SMCJ30CHE3/57T application circuit.
Is the SMCJ30CHE3/57T suitable for automotive applications?
Yes, the SMCJ30CHE3/57T is AEC-Q101 qualified and explicitly rated for automotive use. Its construction - including glass-passivated junction, MSL Level 1 reflow compatibility, JESD 201 Class 2 whisker resistance, and –55 °C to +150 °C operating range - meets requirements for engine control units, ADAS sensors, and infotainment systems. The SMCJ30CHE3/57T datasheet confirms qualification under this standard.
Does the SMCJ30CHE3/57T have polarity markings?
No, the SMCJ30CHE3/57T is a bi-directional TVS diode and carries no polarity marking on its DO-214AB (SMCJ) package. Unlike uni-directional variants (e.g., SMCJ30A), it functions identically in either orientation - clamping positive and negative transients symmetrically. This simplifies layout and eliminates orientation errors during automated placement of the SMCJ30CHE3/57T.
What is the leakage current specification for the SMCJ30CHE3/57T at its stand-off voltage?
The SMCJ30CHE3/57T exhibits a maximum reverse leakage current (ID) of 1.0 µA at its 30 V stand-off voltage (VWM), measured at 25 °C. This ultra-low leakage preserves signal integrity in high-impedance sensor interfaces and avoids unnecessary power loss in battery-powered systems - a confirmed parameter in the official SMCJ30CHE3/57T electrical characteristics table.
How does the SMCJ30CHE3/57T differ from the SMCJ30A variant?
The SMCJ30CHE3/57T is bi-directional (suffix "CA"), while SMCJ30A is uni-directional (suffix "A"). The SMCJ30CHE3/57T clamps transients in both polarities and lacks a cathode band; SMCJ30A has polarity marking and conducts forward surge only. Both share identical VWM (30 V), PPPM (1500 W), and package (DO-214AB), but the SMCJ30CHE3/57T is required for AC-coupled or floating signal line protection.
SMCJ30CHE3/57T Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AB, SMC
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 30V
- Voltage - Breakdown (Min):
- 33.3V
- Voltage - Clamping (Max) @ Ipp:
- 53.5V
- Current - Peak Pulse (10/1000µs):
- 28A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AB (SMCJ)
SMCJ30CHE3/57T FAQ
1.How can I place an order for SMCJ30CHE3/57T through Aetrix?
Please submit a Request for Quotation (RFQ) for SMCJ30CHE3/57T on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMCJ30CHE3/57T reliable?
The price and inventory of SMCJ30CHE3/57T are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMCJ30CHE3/57T is usually 5 days.
3.What payment methods are accepted for SMCJ30CHE3/57T?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMCJ30CHE3/57T transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMCJ30CHE3/57T?
SMCJ30CHE3/57T orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMCJ30CHE3/57T order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMCJ30CHE3/57T?
For technical support, including SMCJ30CHE3/57T datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMCJ30CHE3/57T requirements.
6.How does Aetrix verify that SMCJ30CHE3/57T is sourced from the original manufacturer or authorized distributors?
All SMCJ30CHE3/57T products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMCJ30CHE3/57T meets industry standards.
7.What is the process for return or replacement of SMCJ30CHE3/57T?
All SMCJ30CHE3/57T units undergo pre-shipment inspection (PSI). If there is an issue with SMCJ30CHE3/57T, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMCJ30CHE3/57T part is unused and in its original packaging.
Return procedure for SMCJ30CHE3/57T:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMCJ30CHE3/57T Tags

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Toshiba Semiconductor and Storage

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