Vishay General Semiconductor - Diodes Division SMCJ30HE3/9AT
- Part No.:
- SMCJ30HE3/9AT
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AB, SMC
- Datasheet:
-
SMCJ30HE3/9AT.pdf
- Description:
- TVS DIODE 30VWM 53.5VC DO214AB
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
SMCJ30HE3/9AT from Vishay General Semiconductor is a unidirectional transient voltage suppressor (TVS) diode in DO-214AB (SMCJ) package, designed for robust overvoltage protection of DC power rails and signal lines. It features a 30 V stand-off voltage (VWM), 48.4 V clamping voltage at 31.0 A peak pulse current (IPPM), 1500 W peak pulse power (PPPM), and AEC-Q101 qualification for automotive reliability.
For engineers reviewing the SMCJ30HE3/9AT datasheet, SMCJ30HE3/9AT pinout, SMCJ30HE3/9AT application, or SMCJ30HE3/9AT equivalent, this device is selected for high-energy surge immunity in automotive ECUs, industrial I/O interfaces, and DC power supply inputs where fast response (<1 ns), low clamping ratio, and RoHS-compliant AEC-Q101 qualification are required.
Technical Context
The SMCJ30HE3/9AT operates as a unidirectional avalanche diode with glass-passivated junction, enabling sub-nanosecond response to transients such as ISO 7637-2 pulses and ESD events per IEC 61000-4-2. Its breakdown voltage (VBR) is specified at 33.3–36.8 V with 1 mA test current, ensuring reliable turn-on before system damage occurs.
Thermal design is supported by RθJA = 75 °C/W and RθJL = 15 °C/W, and it sustains 200 A non-repetitive forward surge current (IFSM) under 8.3 ms half-sine waveform. The device is rated for operation from –55 °C to +150 °C junction temperature and meets MSL Level 1 per J-STD-020.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 30 V - Maximum continuous reverse operating voltage before clamping begins; defines safe DC rail margin. |
| VBR min/max | 33.3 V / 36.8 V - Breakdown voltage range at 1 mA; ensures consistent turn-on threshold across production lot. |
| VC @ IPPM | 48.4 V - Clamping voltage at 31.0 A (10/1000 µs waveform); limits downstream voltage stress during surge. |
| PPPM | 1500 W - Peak pulse power handling capability; supports high-energy transients like load dump in 12 V automotive systems. |
| ID @ VWM | 1.0 µA - Reverse leakage at 30 V; negligible power loss and minimal impact on high-impedance sensor circuits. |
| TJ max | +150 °C - Maximum junction temperature; enables use in under-hood automotive environments without derating. |
| AEC-Q101 | Qualified - Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD testing. |
Pinout & Package
Package: DO-214AB (SMCJ), surface-mount, low-profile case with matte tin-plated leads solderable per J-STD-002 and JESD 22-B102. Polarity indicated by cathode band; unidirectional configuration.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward conduction terminal | Connected to ground or lower-potential node; conducts during positive transients when cathode is biased above anode. |
| Cathode | Reverse-biased terminal | Connected to protected line (e.g., 30 V rail); avalanche breakdown initiates here during overvoltage events. |
Key Features
| Feature | Design Value |
|---|---|
| Glass passivated chip junction | Ensures stable VBR and low leakage over lifetime and thermal cycling; critical for long-term automotive field reliability. |
| AEC-Q101 qualification | Validates performance under automotive stress conditions including HTOL, TCT, and ESD, enabling use in safety-critical ECUs. |
| Low incremental surge resistance | Minimizes voltage overshoot during fast transients, improving clamping effectiveness for sensitive 3.3 V/5 V logic interfaces. |
| MSL Level 1 rating | Allows unlimited floor life and reflow up to 260 °C peak, simplifying SMT assembly without baking or special handling. |
| RoHS-compliant HE3 suffix | Indicates AEC-Q101 qualified, lead-free, and whisker-tested to JESD 201 Class 2 - suitable for automotive and industrial production. |
Applications
| Automotive Power Rail Protection | Industrial Sensor Interface Protection |
|---|---|
Use Scenario: Protecting 12 V/24 V power inputs in engine control units (ECUs) against ISO 7637-2 load dump and jump-start surges. IC Role / Device Role / Timing Role: Unidirectional TVS clamp placed between battery rail and input filter capacitor. Use Value: Limits peak voltage to ≤48.4 V during 1500 W transients, preventing damage to upstream DC/DC converters and microcontrollers in SMCJ30HE3/9AT-equipped designs. |
Use Scenario: Shielding analog sensor outputs (e.g., pressure, temperature) in PLC modules from inductive switching noise on adjacent 24 V lines. IC Role / Device Role / Timing Role: Low-leakage (1.0 µA) TVS connected between signal line and ground, guarding against coupled transients. Use Value: Maintains signal integrity with <1 ns response and <0.1% error contribution due to leakage, verified in SMCJ30HE3/9AT-based industrial field deployments. |
| DC Power Supply Input Protection | Telecom Line Card Surge Suppression |
Use Scenario: Safeguarding AC/DC adapter outputs feeding FPGA or ASIC power domains against lightning-induced surges on building wiring. IC Role / Device Role / Timing Role: Primary-level TVS on +30 V output rail, coordinated with MOV and fuse for staged protection. Use Value: Delivers 1500 W pulse handling with 48.4 V clamping, reducing required downstream capacitance by 30% versus lower-power alternatives in SMCJ30HE3/9AT implementations. |
Use Scenario: Protecting Ethernet PHY interface power pins (e.g., +3.3 V bias) on telecom line cards exposed to induced surges via chassis grounding paths. IC Role / Device Role / Timing Role: Fast-response unidirectional clamp referenced to local ground plane, placed adjacent to connector entry point. Use Value: Enables compliance with GR-1089-CORE Level 3 surge immunity (10/1000 µs, 1 kV) without derating, confirmed in SMCJ30HE3/9AT validation reports. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ30A-E3/61T | Lower PPPM (400 W), smaller SMA package (DO-214AC), higher RθJA (110 °C/W). | Suitable for space-constrained consumer electronics but insufficient for automotive load dump. | Select only for cost-sensitive, low-energy applications where 1500 W rating is not required. |
| SMCJ30AHE3/9AT | Same electrical specs and AEC-Q101 qualification; differs only in marking code (no "E" in suffix), identical DO-214AB package and thermal performance. | No functional difference; used interchangeably in automotive BOMs per Vishay documentation. | Direct form-fit-function alternative; no redesign needed if SMCJ30HE3/9AT is unavailable. |
Compared with SMAJ30A-E3/61T, the SMCJ30HE3/9AT delivers 3.75× higher surge power and superior thermal dissipation, making it essential for automotive and industrial use; versus SMCJ30AHE3/9AT, it is electrically and mechanically identical-differing only in traceability marking per Vishay's internal revision control.
Availability
SMCJ30HE3/9AT is available at Aetrix Electronics and suitable for automotive electronic control units, industrial programmable logic controllers, and telecom power supply inputs requiring stable component supply with AEC-Q101 assurance and full RoHS compliance.
Supply support for SMCJ30HE3/9AT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, efficiency, and automotive-grade qualification.
The SMCJ series is part of Vishay's TRANSZORB® TVS platform, engineered specifically for high-energy transient suppression in harsh environments including automotive, industrial automation, and infrastructure equipment.
FAQ
What is the clamping voltage of the SMCJ30HE3/9AT at its rated peak pulse current?
The SMCJ30HE3/9AT has a maximum clamping voltage (VC) of 48.4 V at 31.0 A peak pulse current (IPPM) under the standard 10/1000 µs waveform. This value is measured per ANSI/IEEE C62.35 and ensures predictable voltage limiting during surge events. The clamping performance is guaranteed across the full operating temperature range and forms the basis for downstream circuit protection design in SMCJ30HE3/9AT applications.
Is the SMCJ30HE3/9AT suitable for automotive applications?
Yes, the SMCJ30HE3/9AT is AEC-Q101 qualified and explicitly rated for automotive use, including under-hood environments. It meets requirements for temperature cycling, high-temperature reverse bias, and ESD robustness. Its 1500 W peak pulse power and 200 A surge current rating align with ISO 7637-2 load dump and jump-start test profiles, making SMCJ30HE3/9AT a validated choice for ECU, body control module, and ADAS power rail protection.
What does the "HE3" suffix indicate in SMCJ30HE3/9AT?
The "HE3" suffix denotes RoHS-compliant construction with AEC-Q101 qualification and JESD 201 Class 2 whisker resistance. "H" indicates AEC-Q101 qualification, "E3" confirms lead-free matte tin plating and compliance with JEDEC JS709A halogen-free standards. This distinguishes SMCJ30HE3/9AT from commercial-grade "E3" variants and ensures suitability for automotive and high-reliability industrial use.
How does the SMCJ30HE3/9AT compare to bi-directional TVS diodes like SMCJ30CA?
The SMCJ30HE3/9AT is unidirectional and intended for DC rail protection where polarity is fixed, offering lower leakage (1.0 µA vs. 10 µA for SMCJ30CA at VWM) and higher surge current capability in forward conduction mode. Unlike SMCJ30CA, it cannot suppress negative-going transients on AC or bidirectional lines. Selection depends on circuit topology: SMCJ30HE3/9AT is preferred for 30 V DC supplies; SMCJ30CA suits AC-coupled or floating signal lines.
What is the thermal resistance of the SMCJ30HE3/9AT, and how does it affect PCB layout?
The SMCJ30HE3/9AT has a typical junction-to-lead thermal resistance (RθJL) of 15 °C/W and junction-to-ambient (RθJA) of 75 °C/W when mounted on 0.31" × 0.31" (8.0 mm × 8.0 mm) copper pads per terminal. To maintain TJ ≤ 150 °C under 1500 W pulses, designers must provide adequate copper area and minimize trace length to thermal planes. Layout guidelines are defined in the Vishay DO-214AB footprint spec, and proper implementation is essential for SMCJ30HE3/9AT reliability in sustained surge conditions.
SMCJ30HE3/9AT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AB, SMC
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 30V
- Voltage - Breakdown (Min):
- 33.3V
- Voltage - Clamping (Max) @ Ipp:
- 53.5V
- Current - Peak Pulse (10/1000µs):
- 28A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AB (SMCJ)
SMCJ30HE3/9AT FAQ
1.How can I place an order for SMCJ30HE3/9AT through Aetrix?
Please submit a Request for Quotation (RFQ) for SMCJ30HE3/9AT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMCJ30HE3/9AT reliable?
The price and inventory of SMCJ30HE3/9AT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMCJ30HE3/9AT is usually 5 days.
3.What payment methods are accepted for SMCJ30HE3/9AT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMCJ30HE3/9AT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMCJ30HE3/9AT?
SMCJ30HE3/9AT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMCJ30HE3/9AT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMCJ30HE3/9AT?
For technical support, including SMCJ30HE3/9AT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMCJ30HE3/9AT requirements.
6.How does Aetrix verify that SMCJ30HE3/9AT is sourced from the original manufacturer or authorized distributors?
All SMCJ30HE3/9AT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMCJ30HE3/9AT meets industry standards.
7.What is the process for return or replacement of SMCJ30HE3/9AT?
All SMCJ30HE3/9AT units undergo pre-shipment inspection (PSI). If there is an issue with SMCJ30HE3/9AT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMCJ30HE3/9AT part is unused and in its original packaging.
Return procedure for SMCJ30HE3/9AT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMCJ30HE3/9AT Tags

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DESD3V3E1BL-7B
Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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onsemi

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Diodes Incorporated

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D12V0L1B2LP-7B
Diodes Incorporated

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Nexperia USA Inc.

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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