Vishay General Semiconductor - Diodes Division SMCJ43HE3/9AT
- Part No.:
- SMCJ43HE3/9AT
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AB, SMC
- Datasheet:
-
SMCJ43HE3/9AT.pdf
- Description:
- TVS DIODE 43VWM 76.7VC DO214AB
- Quantity:
- Payment:

- Shipping:

Inventory:4,556
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SMCJ43HE3/9AT from Vishay General Semiconductor is a unidirectional transient voltage suppressor (TVS) diode in DO-214AB (SMCJ) package, designed for high-energy surge protection on DC power rails and signal lines. It features a 43 V standoff voltage (VWM), 47.8–52.8 V breakdown range (VBR), 69.4 V clamping voltage at 21.6 A peak pulse current (IPPM), and 1500 W peak pulse power rating with 10/1000 µs waveform. It is AEC-Q101 qualified and RoHS compliant, targeting automotive power supply input protection.
For engineers reviewing the SMCJ43HE3/9AT datasheet, SMCJ43HE3/9AT pinout, SMCJ43HE3/9AT application, or SMCJ43HE3/9AT equivalent, key selection criteria include clamping performance under 21.6 A surge, thermal resistance (RθJA = 75 °C/W), unidirectional polarity marking, and compatibility with automated SMT placement on 8.0 mm × 8.0 mm copper pads.
Technical Context
The SMCJ43HE3/9AT operates as a silicon avalanche diode that enters breakdown when reverse voltage exceeds its VBR (47.8–52.8 V), limiting transient overvoltage to ≤69.4 V at 21.6 A. Its glass-passivated junction ensures stable leakage (<1.0 µA at 43 V) and fast response time (<1.0 ps), critical for protecting MOSFET gates and microcontroller I/O against ESD and load dump.
Thermally, it sustains 6.5 W continuous power dissipation at TA = 50 °C and handles 200 A non-repetitive forward surge (8.3 ms half-sine). The DO-214AB package provides low incremental surge resistance and meets MSL Level 1 (260 °C reflow peak), supporting automotive-grade reliability per AEC-Q101.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 43 V - Maximum continuous reverse operating voltage before significant leakage; defines safe DC rail margin for 48 V systems. |
| VBR min/max | 47.8 V / 52.8 V - Breakdown occurs within this range at 1 mA test current; ensures predictable turn-on during transients. |
| VC @ IPPM | 69.4 V at 21.6 A - Clamped voltage during 10/1000 µs surge; determines maximum stress on downstream ICs. |
| PPPM | 1500 W - Peak pulse power handling capability; supports protection against ISO 7637-2 Pulse 1/2a/5a in automotive environments. |
| ID @ VWM | ≤1.0 µA - Reverse leakage at 43 V; negligible power loss and no thermal runaway risk in standby. |
| TJ max | +150 °C - Maximum junction temperature; enables operation in under-hood automotive locations. |
| RθJA | 75 °C/W - Junction-to-ambient thermal resistance on standard PCB pad; informs heatsinking requirements for sustained surges. |
Pinout & Package
Package: DO-214AB (SMCJ), surface-mount, low-profile case with matte tin-plated leads solderable per J-STD-002. Cathode indicated by band at one end; polarity critical for unidirectional operation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward conduction terminal | Connected to system ground or lower-potential node; completes current path during positive transients on cathode side. |
| Cathode (banded end) | Reverse-biased surge clamping terminal | Connected to protected line (e.g., 48 V rail); avalanche conduction begins here when voltage exceeds VBR. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive under-hood applications including temperature cycling, humidity bias, and mechanical shock. |
| Glass-passivated junction | Ensures long-term stability of VBR and leakage across 150 °C operating range and >1000 surge events. |
| MSL Level 1 compliance | Supports lead-free reflow up to 260 °C peak without popcorn cracking or delamination. |
| Low incremental surge resistance | Minimizes voltage overshoot during fast-rising transients (e.g., ISO 10605 ESD), improving clamping fidelity. |
| 1500 W peak pulse power | Handles severe load-dump events (e.g., 12 V/24 V vehicle alternator disconnection) without failure. |
Applications
| Automotive Power Input Protection | Industrial DC Power Rail Clamp |
|---|---|
|
Use Scenario: Protecting 48 V battery management system (BMS) inputs from load dump transients during alternator disconnection. IC Role / Device Role / Timing Role: Unidirectional TVS placed between 48 V rail and chassis ground to clamp surges above 69.4 V within nanoseconds. Use Value: Prevents destruction of upstream DC-DC converters and downstream MCU power supplies by limiting peak voltage to 69.4 V at 21.6 A. |
Use Scenario: Safeguarding PLC I/O module 24 V DC power inputs against inductive switching spikes from solenoid drivers. IC Role / Device Role / Timing Role: Standoff device absorbing repetitive 1500 W pulses without degradation, mounted directly at connector entry point. Use Value: Eliminates need for external series impedance or RC snubbers due to low clamping ratio (VC/VWM = 1.61) and <1 µA leakage. |
| Automotive Sensor Signal Line Guard | Telecom DC Feeder Protection |
|
Use Scenario: Shielding CAN transceiver VCC pins from coupled transients induced by nearby motor actuation in ADAS camera modules. IC Role / Device Role / Timing Role: Localized clamping element placed adjacent to IC power pin, leveraging fast response (<1 ps) to suppress sub-microsecond spikes. Use Value: Maintains signal integrity by preventing latch-up in 3.3 V/5 V CAN PHYs while adding only 0.211 g mass and no board area penalty. |
Use Scenario: Protecting PoE+ (IEEE 802.3at) powered device (PD) front-end rectifiers from lightning-induced surges on 57 V DC feeders. IC Role / Device Role / Timing Role: Primary surge arrestor on DC input before active OR-ing FETs, rated for repeated 10/1000 µs surges per ITU-T K.21. Use Value: Enables single-device compliance with telecom surge immunity standards without derating or parallel staging. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ43AHE3/9AT | Lower PPPM (600 W), smaller SMB package (DO-214AA), same VWM/VBR/VC specs. | Suitable for space-constrained consumer electronics; insufficient for automotive load dump per ISO 7637-2 Pulse 5a. | Select when board area is limited and surge energy ≤600 W; verify thermal derating on small pads. |
| SMCJ43A-E3/9AT | Same electrical specs but commercial-grade (non-AEC-Q101), no whisker testing (JESD 201 Class 1A vs. Class 2). | Acceptable for industrial control panels but not qualified for automotive safety-critical ECUs. | Choose for cost-sensitive non-automotive designs where AEC-Q101 is not mandated. |
Compared with SMCJ43HE3/9AT, SMBJ43AHE3/9AT trades 60% pulse power for 40% smaller footprint, while SMCJ43A-E3/9AT removes automotive qualification but retains identical clamping behavior-making the HE3 suffix essential for under-hood deployment.
Availability
SMCJ43HE3/9AT is available at Aetrix Electronics and suitable for automotive power input protection, industrial DC rail clamping, and telecom feeder surge suppression requiring stable component supply across extended temperature ranges and high-reliability production cycles.
Supply support for SMCJ43HE3/9AT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, MOSFETs, optoelectronics, and passive components with emphasis on reliability and AEC-Q qualification.
The SMCJ series targets high-energy transient suppression in harsh environments, with design focus on automotive load dump, industrial inductive switching, and telecom lightning surge standards.
FAQ
What is the clamping voltage of the SMCJ43HE3/9AT at its rated peak pulse current?
The SMCJ43HE3/9AT clamps to a maximum of 69.4 V at its specified peak pulse current of 21.6 A (10/1000 µs waveform). This value is measured under standardized test conditions with 0.31" × 0.31" copper pads per terminal and represents the upper limit of voltage seen by protected circuitry during a full-rated surge event. The SMCJ43HE3/9AT maintains this clamping performance consistently across its qualified temperature range.
Is the SMCJ43HE3/9AT suitable for bi-directional transient protection?
No, the SMCJ43HE3/9AT is a unidirectional TVS diode, indicated by the "A" suffix (not "CA"). It conducts only in reverse bias above VBR and blocks forward current like a standard diode. For bi-directional protection, Vishay offers the SMCJ43CA variant, which has symmetrical breakdown in both polarities. Using the SMCJ43HE3/9AT in AC or floating applications risks forward conduction failure.
Does the SMCJ43HE3/9AT require a heatsink for continuous operation?
The SMCJ43HE3/9AT does not require an external heatsink for its specified 6.5 W power dissipation at TA = 50 °C, provided it is mounted on the recommended 0.31" × 0.31" (8.0 mm × 8.0 mm) copper pads per terminal. Its RθJA of 75 °C/W allows adequate natural convection cooling in typical automotive and industrial enclosures. Forced airflow or larger copper areas further improve thermal margin for sustained surge duty cycles.
How does the AEC-Q101 qualification impact the use of SMCJ43HE3/9AT in automotive designs?
AEC-Q101 qualification certifies that the SMCJ43HE3/9AT has passed accelerated stress tests-including temperature cycling, high-temperature operating life, and mechanical shock-specifically for discrete semiconductors in automotive applications. This validation ensures robustness in under-hood environments up to +150 °C junction temperature and qualifies the SMCJ43HE3/9AT for use in safety-critical ECUs without additional component-level qualification effort.
What is the meaning of the "HE3/9AT" suffix in SMCJ43HE3/9AT?
The "HE3" suffix denotes RoHS-compliant construction with AEC-Q101 qualification and JESD 201 Class 2 whisker resistance; "9AT" specifies packaging in 13-inch diameter plastic tape and reel with 3500 units per reel. This distinguishes the SMCJ43HE3/9AT from commercial-grade variants (e.g., SMCJ43A-E3/9AT) and smaller-package equivalents (e.g., SMBJ43AHE3/9AT), confirming its suitability for high-reliability automotive production.
SMCJ43HE3/9AT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AB, SMC
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 43V
- Voltage - Breakdown (Min):
- 47.8V
- Voltage - Clamping (Max) @ Ipp:
- 76.7V
- Current - Peak Pulse (10/1000µs):
- 19.6A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AB (SMCJ)
SMCJ43HE3/9AT FAQ
1.How can I place an order for SMCJ43HE3/9AT through Aetrix?
Please submit a Request for Quotation (RFQ) for SMCJ43HE3/9AT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMCJ43HE3/9AT reliable?
The price and inventory of SMCJ43HE3/9AT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMCJ43HE3/9AT is usually 5 days.
3.What payment methods are accepted for SMCJ43HE3/9AT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMCJ43HE3/9AT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMCJ43HE3/9AT?
SMCJ43HE3/9AT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMCJ43HE3/9AT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMCJ43HE3/9AT?
For technical support, including SMCJ43HE3/9AT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMCJ43HE3/9AT requirements.
6.How does Aetrix verify that SMCJ43HE3/9AT is sourced from the original manufacturer or authorized distributors?
All SMCJ43HE3/9AT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMCJ43HE3/9AT meets industry standards.
7.What is the process for return or replacement of SMCJ43HE3/9AT?
All SMCJ43HE3/9AT units undergo pre-shipment inspection (PSI). If there is an issue with SMCJ43HE3/9AT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMCJ43HE3/9AT part is unused and in its original packaging.
Return procedure for SMCJ43HE3/9AT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMCJ43HE3/9AT Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

