Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay General Semiconductor - Diodes Division SMCJ48AHE3/9AT

Part No.:
SMCJ48AHE3/9AT
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
DO-214AB, SMC
Datasheet:
AetrixSMCJ48AHE3/9AT.pdf
Description:
TVS DIODE 48VWM 77.4VC DO214AB
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,098

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

SMCJ48AHE3/9AT from Vishay General Semiconductor is a unidirectional transient voltage suppressor (TVS) diode in SMC (DO-214AB) package, designed for robust overvoltage protection of DC power rails and signal lines. It features a 48 V stand-off voltage (VWM), 53.3–58.9 V breakdown voltage (VBR) at 1 mA, 77.4 V maximum clamping voltage (VC) at 19.4 A peak pulse current (IPPM), and 1500 W peak pulse power (PPPM) rating with 10/1000 µs waveform.

For engineers reviewing the SMCJ48AHE3/9AT datasheet, SMCJ48AHE3/9AT pinout, SMCJ48AHE3/9AT application, or SMCJ48AHE3/9AT equivalent, this device is selected for high-energy surge immunity in automotive power supplies, industrial sensor interfaces, and telecom line protection where AEC-Q101 qualification, low clamping ratio, and MSL Level 1 reliability are required.

Technical Context

The SMCJ48AHE3/9AT operates as a silicon avalanche diode with glass-passivated junction, delivering sub-nanosecond response to transients. Its unidirectional polarity enables cathode-referenced clamping on positive-going surges, and its thermal resistance (RθJA = 75 °C/W) supports operation up to +150 °C junction temperature under defined PCB pad layout.

Designed per ANSI/IEEE C62.35, it meets UL 497B recognition (QVGQ2) and complies with JESD201 Class 2 whisker resistance. The device is rated for non-repetitive 8.3 ms half-sine surge current up to 200 A (IFSM) and exhibits a VBR temperature coefficient of +0.103 %/°C.

Key Specifications

Parameter Value and Actual Design Meaning
VWM 48 V - Maximum continuous reverse operating voltage before clamping begins; defines safe DC rail margin for 48 V systems.
VBR (min/max) 53.3 V / 58.9 V at 1 mA - Confirmed avalanche onset range; ensures reliable triggering above nominal rail.
VC @ IPPM 77.4 V at 19.4 A - Clamped voltage during 10/1000 µs surge; limits downstream IC stress to ≤77.4 V.
PPPM 1500 W - Peak transient energy handling capacity; supports IEC 61000-4-5 Level 4 (4 kV) compliance with proper layout.
ID @ VWM 1.0 µA - Reverse leakage at stand-off; negligible power loss and noise contribution in standby.
TJ max. +150 °C - Maximum junction temperature; enables use in under-hood automotive and high-ambient industrial environments.
Package SMC (DO-214AB) - Surface-mount outline with 8.0 mm × 8.0 mm copper pads; supports automated placement and IPC-compliant reflow.

Pinout & Package

SMCJ48AHE3/9AT uses the standard SMC (DO-214AB) package: molded epoxy case with matte tin-plated leads, polarity indicated by a cathode band on the unidirectional device. Mounting requires 0.31" × 0.31" (8.0 mm × 8.0 mm) copper pads per terminal per Vishay's recommended layout.

Pin/Terminal Circuit Role Design Meaning
Cathode (banded end) Clamping output node Connected to protected line; conducts surge current to ground when voltage exceeds VBR.
Anode Reference/ground return Typically tied to system ground or low-impedance return path; completes clamping loop during transient events.

Key Features

Feature Design Value
AEC-Q101 qualified Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD; suitable for engine control and ADAS power domains.
Glass passivated junction Enhances long-term stability and moisture resistance vs. epoxy-passivated alternatives; critical for field-deployed industrial equipment.
Low incremental surge resistance Minimizes VC overshoot during fast-rising transients (e.g., ISO 7637-2 pulse 1/2a); improves clamping precision.
MSL Level 1 (260 °C peak) Compatible with standard lead-free reflow profiles without baking; reduces manufacturing complexity and cost.
UL 497B recognized (QVGQ2) Meets safety requirements for telecom and data line protectors; simplifies end-equipment certification.

Applications

Automotive Power Rail Protection Industrial Sensor Interface Protection

Use Scenario: Protecting 48 V battery-supplied ECUs against load dump and alternator ripple transients.

IC Role / Device Role / Timing Role: Unidirectional TVS placed between battery rail and input filter capacitor to clamp surges before LDO or DC-DC converter.

Use Value: Limits voltage to ≤77.4 V during 1500 W pulses, preventing damage to 60 V-rated power management ICs.

Use Scenario: Shielding analog front-end inputs of pressure/temperature sensors in factory automation PLCs.

IC Role / Device Role / Timing Role: Low-leakage (1.0 µA) TVS on signal lines to absorb ESD and switching noise from nearby solenoids.

Use Value: Maintains signal integrity with <1 µA bias current and clamps transients within 1 ns, avoiding ADC saturation.

Telecom DC Power Input Protection Motor Drive Control Signal Protection

Use Scenario: Safeguarding -48 V telecom rectifier outputs against lightning-induced surges on central office equipment.

IC Role / Device Role / Timing Role: Cathode-to-rail configuration clamps positive transients to ground while blocking normal -48 V bias.

Use Value: Withstands repeated 10/1000 µs surges up to 1500 W, meeting Telcordia GR-1089-CORE Level 3 requirements.

Use Scenario: Guarding isolated gate driver enable lines in BLDC motor inverters against cross-talk and inductive kickback.

IC Role / Device Role / Timing Role: Fast-response (sub-ns) TVS placed at microcontroller GPIO output to suppress coupling from high-dV/dt power stages.

Use Value: Clamps spikes to 77.4 V before they exceed the 3.3 V logic threshold of optocoupler or digital isolator inputs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient suppression applications.

Alternative Part Technical Difference Application Difference Selection Advice
SMAJ48A-E3/61T Lower PPPM (400 W), SMA package (smaller footprint, higher RθJA = 110 °C/W) Not suitable for 1500 W surges; limited to lower-energy IEC 61000-4-2 ESD or low-power signal lines. Select only if space-constrained and surge energy is ≤400 W; verify thermal derating at +85 °C ambient.
SMCJ48CAHE3/9AT Bidirectional variant; identical VWM/VBR/VC but symmetric clamping in both polarities Required for AC-coupled or floating signal lines (e.g., RS-485, CAN bus) where negative transients occur. Choose when protecting bidirectional interfaces; note that ID doubles to 2.0 µA for VWM ≤10 V models (not applicable here).

Compared with SMAJ48A-E3/61T and SMCJ48CAHE3/9AT, the SMCJ48AHE3/9AT uniquely balances 1500 W surge capacity, AEC-Q101 qualification, and unidirectional clamping in SMC package-making it optimal for high-reliability 48 V DC power protection where asymmetric surge directionality is known.

Availability

SMCJ48AHE3/9AT is available at Aetrix Electronics and suitable for automotive power distribution, industrial sensor conditioning, and telecom DC input protection requiring stable component supply across multi-year production cycles.

Supply support for SMCJ48AHE3/9AT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, MOSFETs, optoelectronics, and passive components with emphasis on reliability and application-specific performance.

The SMCJ series was developed for high-energy transient suppression in harsh environments-targeting automotive, industrial, and telecom systems needing certified, high-power TVS solutions in standardized surface-mount packages.

FAQ

What is the clamping voltage of SMCJ48AHE3/9AT at its rated peak pulse current?

The SMCJ48AHE3/9AT has a maximum clamping voltage (VC) of 77.4 V at 19.4 A peak pulse current (IPPM), measured with a 10/1000 µs waveform. This value defines the upper voltage limit imposed on protected circuitry during a full-rated surge event and is confirmed in Vishay's datasheet Document Number 88394, page 2.

Is SMCJ48AHE3/9AT qualified for automotive applications?

Yes, SMCJ48AHE3/9AT carries AEC-Q101 qualification, verified per the "HE3" suffix designation in Vishay's ordering nomenclature. It undergoes stress testing for temperature cycling, high-temperature reverse bias, and ESD-making it suitable for under-hood and chassis-mounted automotive modules.

What does the "HE3/9AT" suffix indicate in SMCJ48AHE3/9AT?

The "HE3" denotes RoHS-compliant and AEC-Q101 qualified construction, while "9AT" specifies packaging in 13-inch diameter plastic tape and reel, with a base quantity of 3500 units. This matches Vishay's ordering information table on page 3 of document 88394.

How does SMCJ48AHE3/9AT differ from the bidirectional SMCJ48CAHE3/9AT?

SMCJ48AHE3/9AT is unidirectional with cathode marking and clamps only positive transients relative to ground; SMCJ48CAHE3/9AT is bidirectional, clamping surges of either polarity. Both share identical VWM (48 V), VBR (53.3–58.9 V), and VC (77.4 V), but differ in polarity marking and application scope.

What PCB layout guidance applies to SMCJ48AHE3/9AT for optimal thermal and surge performance?

Vishay specifies mounting on 0.31" × 0.31" (8.0 mm × 8.0 mm) copper pads per terminal to achieve rated PPPM and thermal dissipation. Use short, wide traces to minimize inductance, avoid vias in current paths, and ensure solid ground plane connection to the anode for effective clamping-details are in the "Mechanical Data" section of document 88394.

SMCJ48AHE3/9AT Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
DO-214AB, SMC
Series:
TransZorb®
Packaging:
Tape & Reel (TR)
Product Status:
Discontinued at Digi-Key
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
48V
Voltage - Breakdown (Min):
53.3V
Voltage - Clamping (Max) @ Ipp:
77.4V
Current - Peak Pulse (10/1000µs):
19.4A
Power - Peak Pulse:
1500W (1.5kW)
Power Line Protection:
No
Applications:
-
Capacitance @ Frequency:
-
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
DO-214AB (SMCJ)

SMCJ48AHE3/9AT FAQ

1.How can I place an order for SMCJ48AHE3/9AT through Aetrix?

Please submit a Request for Quotation (RFQ) for SMCJ48AHE3/9AT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SMCJ48AHE3/9AT reliable?

The price and inventory of SMCJ48AHE3/9AT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMCJ48AHE3/9AT is usually 5 days.

3.What payment methods are accepted for SMCJ48AHE3/9AT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMCJ48AHE3/9AT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SMCJ48AHE3/9AT?

SMCJ48AHE3/9AT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SMCJ48AHE3/9AT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SMCJ48AHE3/9AT?

For technical support, including SMCJ48AHE3/9AT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMCJ48AHE3/9AT requirements.

6.How does Aetrix verify that SMCJ48AHE3/9AT is sourced from the original manufacturer or authorized distributors?

All SMCJ48AHE3/9AT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMCJ48AHE3/9AT meets industry standards.

7.What is the process for return or replacement of SMCJ48AHE3/9AT?

All SMCJ48AHE3/9AT units undergo pre-shipment inspection (PSI). If there is an issue with SMCJ48AHE3/9AT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SMCJ48AHE3/9AT part is unused and in its original packaging.

Return procedure for SMCJ48AHE3/9AT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SMCJ48AHE3/9AT Tags

  • SMCJ48AHE3/9AT
  • SMCJ48AHE3/9AT PDF
  • SMCJ48AHE3/9AT Datasheet
  • SMCJ48AHE3/9AT Specifications
  • SMCJ48AHE3/9AT Images
  • Vishay General Semiconductor - Diodes Division
  • Vishay General Semiconductor - Diodes Division SMCJ48AHE3/9AT
  • Buy SMCJ48AHE3/9AT
  • SMCJ48AHE3/9AT Price
  • SMCJ48AHE3/9AT Distributor
  • SMCJ48AHE3/9AT Supplier
  • SMCJ48AHE3/9AT Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER