Vishay General Semiconductor - Diodes Division SMCJ51A-M3/9AT
- Part No.:
- SMCJ51A-M3/9AT
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AB, SMC
- Datasheet:
-
SMCJ51A-M3/9AT.pdf
- Description:
- TVS DIODE 51VWM 82.4VC DO214AB
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
SMCJ51A-M3/9AT from Vishay General Semiconductor is a unidirectional transient voltage suppressor (TVS) diode designed for robust overvoltage protection in DC power rails and signal lines. It features a 51 V standoff voltage (VWM), 56.7–62.7 V breakdown range (VBR at 1 mA), 82.4 V maximum clamping voltage (VC) at 18.2 A peak pulse current, and 1500 W peak pulse power rating with a 10/1000 µs waveform - deployed in automotive ECUs, industrial PLC I/O modules, and telecom power supplies.
For engineers reviewing the SMCJ51A-M3/9AT datasheet, SMCJ51A-M3/9AT pinout, SMCJ51A-M3/9AT application, or SMCJ51A-M3/9AT equivalent, this page delivers verified electrical parameters, package dimensions, clamping behavior under surge conditions, thermal resistance data, and direct alternatives for ESD/surge protection design-in and BOM optimization.
Technical Context
This unidirectional TVS diode operates as a voltage-clamped shunt protector: when reverse voltage exceeds VBR, it avalanches to divert transient energy away from downstream ICs. Its glass-passivated junction ensures stable leakage (<1 µA at 51 V) and fast response (<1 ns), while the SMC (DO-214AB) package supports high surge current handling (18.2 A IPPM) with low incremental surge resistance.
Thermal performance is defined by RθJA = 75 °C/W (junction-to-ambient, on recommended 8 mm × 8 mm copper pads) and RθJL = 15 °C/W (junction-to-lead), enabling reliable operation up to TJ = 150 °C. The M3 suffix confirms halogen-free, RoHS-compliant construction meeting JESD201 Class 2 whisker resistance.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 51 V - Maximum continuous reverse operating voltage before clamping begins; sets safe margin below system rail. |
| VBR (min/max) | 56.7 V / 62.7 V at 1 mA - Confirmed breakdown threshold range; defines turn-on consistency across production lots. |
| VC @ IPPM | 82.4 V at 18.2 A - Clamped voltage during 1500 W transient; determines protected circuit's maximum stress level. |
| PPPM | 1500 W - Peak pulse power handling per 10/1000 µs waveform; validates immunity to IEC 61000-4-5 Level 4 surges. |
| IPPM | 18.2 A - Peak surge current capability; directly usable for PCB trace sizing and fuse coordination. |
| TJ max. | +150 °C - Maximum junction temperature; enables use in under-hood automotive or high-ambient industrial environments. |
| RθJA | 75 °C/W - Thermal resistance on standard 8 mm × 8 mm pads; informs derating requirements above 25 °C ambient. |
Pinout & Package
Package: SMC (DO-214AB), surface-mount, low-profile case with matte tin-plated leads solderable per J-STD-002. Cathode indicated by band; polarity-critical for unidirectional operation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Cathode (banded end) | Reverse-biased anode connection point | Connected to protected line; conducts avalanche current to ground during overvoltage events. |
| Anode | Reference/ground return path | Typically tied to system ground plane; completes shunt path for transient energy dissipation. |
Key Features
| Feature | Design Value |
|---|---|
| 1500 W peak pulse power | Withstands IEC 61000-4-5 combination wave surges (4 kV/2 Ω) without degradation. |
| Glass-passivated junction | Ensures stable VBR tolerance and low leakage (<1 µA at VWM) over temperature and lifetime. |
| Low incremental surge resistance | Minimizes VC overshoot during fast transients, improving protection margin for 3.3 V/5 V logic. |
| MSL Level 1 (260 °C peak) | Compatible with standard lead-free reflow profiles without preconditioning or baking. |
| Halogen-free, RoHS-compliant (M3) | Fulfills environmental compliance for automotive and industrial OEM programs requiring material declarations. |
Applications
| Automotive Body Control Module | Industrial PLC Digital Input |
|---|---|
|
Use Scenario: Protects microcontroller GPIO and CAN transceiver power pins from load-dump and inductive switching transients in 12 V vehicle subsystems. IC Role / Device Role / Timing Role: Unidirectional shunt clamp placed between 12 V rail and chassis ground, triggered within <1 ns of overvoltage onset. Use Value: Limits voltage seen by downstream 3.3 V LDO and MCU to ≤82.4 V, preventing latch-up or gate oxide damage during ISO 7637-2 Pulse 5a events. |
Use Scenario: Shields 24 V digital input circuits from field-wiring induced surges in factory automation cabinets. IC Role / Device Role / Timing Role: Front-end transient suppressor mounted directly at terminal block entry, clamping spikes before optocoupler input stage. Use Value: Maintains input logic integrity by holding voltage below optocoupler CTR degradation threshold during 1 kV/500 Ω IEC 61000-4-5 surges. |
| Telecom Power Supply Output | Consumer Appliance Motor Drive |
|
Use Scenario: Safeguards +48 V DC-DC converter outputs feeding sensitive Ethernet PHYs and PoE controllers. IC Role / Device Role / Timing Role: Secondary-side TVS connected cathode-to-rail, anode-to-ground, absorbing back-EMF from hot-swap events. Use Value: Prevents overvoltage shutdown of PMBus-configurable regulators by limiting rail excursion to 82.4 V during 1500 W transient bursts. |
Use Scenario: Guards MCU reset and ADC reference lines against commutation noise from brushed DC motors in washing machines. IC Role / Device Role / Timing Role: Localized protection device placed adjacent to motor driver IC, shunting inductive kickback from flyback diodes. Use Value: Reduces system-level EMI-induced resets by clamping sub-µs spikes to <83 V, preserving firmware execution continuity. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SAC51-03-002 (Bourns) | Same 51 V VWM, but 1000 W PPPM and DO-214AA (SMA) package; higher RθJA (100 °C/W). | Limited to lower-energy transients; requires larger pad area for thermal management in high-duty-cycle environments. | Select when footprint constraints favor SMA or when 1000 W rating suffices for IEC 61000-4-2/4-4 compliance only. |
| 1.5KE51A (ON Semiconductor) | Through-hole DO-201 package; identical VWM/VC specs but 1500 W rating tested at 25 °C free-air (not on copper pads). | Not suitable for automated SMT assembly; thermal performance degrades significantly without heatsinking. | Choose only for legacy through-hole designs or prototyping where reflow compatibility is not required. |
Compared with SAC51-03-002 and 1.5KE51A, the SMCJ51A-M3/9AT delivers superior thermal performance via its SMC package's lower RθJA, higher surge current density per unit area, and full SMT manufacturability - making it the preferred choice for volume automotive and industrial applications demanding repeatable 1500 W surge immunity.
Availability
SMCJ51A-M3/9AT is available at Aetrix Electronics and suitable for automotive body electronics, industrial PLC I/O protection, and telecom power supply design requiring stable component supply, halogen-free compliance, and AEC-Q101-qualified alternatives.
Supply support for SMCJ51A-M3/9AT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, MOSFETs, optoelectronics, and passive components with emphasis on reliability and application-specific performance.
The SMCJ series is engineered for high-energy transient suppression in harsh environments - targeting automotive, industrial, and telecom systems where failure due to voltage surges must be eliminated.
FAQ
What is the clamping voltage of the SMCJ51A-M3/9AT at its rated peak pulse current?
The SMCJ51A-M3/9AT has a maximum clamping voltage (VC) of 82.4 V at its rated peak pulse current (IPPM) of 18.2 A, measured using a 10/1000 µs waveform. This value defines the upper voltage limit imposed on protected circuitry during a full-rated transient event and is critical for ensuring downstream ICs remain within absolute maximum ratings. The SMCJ51A-M3/9AT maintains this clamping performance across its specified operating temperature range.
Is the SMCJ51A-M3/9AT suitable for automotive applications?
Yes - the SMCJ51A-M3/9AT is halogen-free and RoHS-compliant (M3 suffix), and its base family is AEC-Q101 qualified when ordered with HE3 or HM3 suffixes. While the -M3/9AT variant itself is commercial-grade, its construction, thermal robustness (TJ max = 150 °C), and surge capability align with automotive subsystem requirements such as body control modules and sensor interfaces. For certified automotive use, specify SMCJ51AHM3_X variants.
How does the SMCJ51A-M3/9AT differ from bidirectional versions like SMCJ51CA?
The SMCJ51A-M3/9AT is unidirectional and features a cathode band for polarity-sensitive placement, whereas SMCJ51CA is bidirectional with no polarity marking and symmetric clamping in both directions. The unidirectional SMCJ51A-M3/9AT offers lower leakage (<1 µA at 51 V) and is intended for DC rail protection, while the CA version suits AC-coupled or floating signal line protection. Their VBR, VC, and PPPM values are otherwise matched.
What is the thermal resistance of the SMCJ51A-M3/9AT, and how does it affect layout?
The SMCJ51A-M3/9AT has a typical junction-to-ambient thermal resistance (RθJA) of 75 °C/W when mounted on 8.0 mm × 8.0 mm copper pads per terminal - a requirement explicitly defined in the datasheet. To achieve rated power dissipation, PCB layout must replicate this pad area; reducing pad size increases RθJA, causing premature thermal derating. The SMCJ51A-M3/9AT also has RθJL = 15 °C/W, supporting efficient heat transfer to internal ground planes.
Can the SMCJ51A-M3/9AT replace older 1.5KE series TVS diodes?
The SMCJ51A-M3/9AT provides equivalent electrical protection (same VWM, VC, and PPPM) as the through-hole 1.5KE51A but in a surface-mount SMC package. It is not a direct mechanical replacement due to different footprint and soldering requirements; however, it offers superior thermal performance in SMT assemblies and eliminates manual insertion. Migration requires PCB redesign but yields higher reliability and automated manufacturing compatibility for the SMCJ51A-M3/9AT.
SMCJ51A-M3/9AT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AB, SMC
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 51V
- Voltage - Breakdown (Min):
- 56.7V
- Voltage - Clamping (Max) @ Ipp:
- 82.4V
- Current - Peak Pulse (10/1000µs):
- 18.2A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AB (SMC)
SMCJ51A-M3/9AT FAQ
1.How can I place an order for SMCJ51A-M3/9AT through Aetrix?
Please submit a Request for Quotation (RFQ) for SMCJ51A-M3/9AT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMCJ51A-M3/9AT reliable?
The price and inventory of SMCJ51A-M3/9AT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMCJ51A-M3/9AT is usually 5 days.
3.What payment methods are accepted for SMCJ51A-M3/9AT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMCJ51A-M3/9AT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMCJ51A-M3/9AT?
SMCJ51A-M3/9AT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMCJ51A-M3/9AT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMCJ51A-M3/9AT?
For technical support, including SMCJ51A-M3/9AT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMCJ51A-M3/9AT requirements.
6.How does Aetrix verify that SMCJ51A-M3/9AT is sourced from the original manufacturer or authorized distributors?
All SMCJ51A-M3/9AT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMCJ51A-M3/9AT meets industry standards.
7.What is the process for return or replacement of SMCJ51A-M3/9AT?
All SMCJ51A-M3/9AT units undergo pre-shipment inspection (PSI). If there is an issue with SMCJ51A-M3/9AT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMCJ51A-M3/9AT part is unused and in its original packaging.
Return procedure for SMCJ51A-M3/9AT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMCJ51A-M3/9AT Tags

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Diodes Incorporated

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Toshiba Semiconductor and Storage

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