My Inquiry
My Account
Vishay General Semiconductor - Diodes Division SMCJ58AHE3_A/I
- Part No.:
- SMCJ58AHE3_A/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AB, SMC
- Datasheet:
-
SMCJ58AHE3_A/I.pdf
- Description:
- TVS DIODE 58VWM 93.6VC DO214AB
- Quantity:
- Payment:
- Shipping:
Inventory:3,272
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SMCJ58AHE3_A/I from Vishay General Semiconductor is a unidirectional transient voltage suppressor (TVS) diode in SMC (DO-214AB) package, designed for robust overvoltage protection of DC power rails and signal lines. It features a 58 V standoff voltage (VWM), 64.4–71.2 V breakdown range (VBR at 1 mA), 93.6 V clamping voltage (VC) at 16 A peak pulse current, and 1500 W peak pulse power rating with 10/1000 µs waveform.
For engineers reviewing the SMCJ58AHE3_A/I datasheet, SMCJ58AHE3_A/I pinout, SMCJ58AHE3_A/I application, or SMCJ58AHE3_A/I equivalent, this device serves as a high-energy, AEC-Q101 qualified surge protector for automotive power electronics, industrial sensor interfaces, and telecom line protection where fast response (<1 ns), low clamping ratio, and stable thermal performance up to +150 °C junction temperature are required.
Technical Context
The SMCJ58AHE3_A/I operates as a silicon avalanche diode that enters controlled breakdown above its VWM, limiting transient voltages to ≤93.6 V at 16 A. Its glass-passivated junction ensures stable leakage (<1 µA at 58 V) and repeatable clamping behavior across temperature (-55 to +150 °C).
Designed for surface-mount automated assembly on standard PCB pads (8.0 mm × 8.0 mm copper), it meets MSL Level 1 per J-STD-020, supports 260 °C lead-free reflow, and delivers <0.1 %/°C temperature coefficient of VBR - critical for precision rail protection in automotive ECUs and motor drives.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 58 V - Maximum continuous reverse operating voltage before clamping begins; defines safe DC rail margin for 48 V systems. |
| VBR (min/max) | 64.4 V / 71.2 V at 1 mA - Confirmed breakdown threshold range; ensures reliable triggering without premature conduction. |
| VC @ IPPM | 93.6 V at 16 A - Clamped voltage during 10/1000 µs surge; limits downstream IC stress to safe levels. |
| PPPM | 1500 W - Peak pulse power handling capacity; sustains high-energy transients like ISO 7637-2 Pulse 5a. |
| TJ max | +150 °C - Maximum junction temperature; enables operation in under-hood automotive environments. |
| RθJA | 75 °C/W - Thermal resistance junction-to-ambient on standard pad layout; informs derating above 25 °C ambient. |
| Leakage ID | ≤1 µA at 58 V - Low reverse leakage preserves system efficiency and avoids false triggers in high-impedance circuits. |
Pinout & Package
Package: SMC (DO-214AB), surface-mount, matte tin-plated leads, polarity indicated by cathode band. Dimensions: 7.75 mm × 6.22 mm × 2.62 mm (L × W × H), compliant with UL 94 V-0.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Low-side connection point | Connected to ground or return path; completes clamping loop when cathode is tied to protected line. |
| Cathode | High-side connection point | Connected to protected line (e.g., 48 V rail); conducts surge current to ground during overvoltage event. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive applications including engine control, ADAS sensors, and body electronics per stress test requirements. |
| 1500 W peak pulse power | Withstands high-energy transients such as load dump (ISO 16750-2) and inductive switching spikes without degradation. |
| Fast response time (<1 ns) | Clamps within nanoseconds of surge onset, protecting sensitive gate drivers and microcontrollers before damage occurs. |
| Low incremental surge resistance | Minimizes VC overshoot during fast-rising transients, improving protection margin for 3.3 V/5 V logic interfaces. |
| MSL Level 1, 260 °C compatible | Supports standard lead-free reflow profiles without moisture-related failure risk during manufacturing. |
Applications
| Automotive Power Rail Protection | Industrial Sensor Interface Protection |
|---|---|
Use Scenario: Protecting 48 V battery-fed ECUs against load dump and alternator transients per ISO 16750-2. IC Role / Device Role / Timing Role: Unidirectional TVS placed between supply rail and chassis ground to clamp surges above 58 V. Use Value: Limits peak voltage to 93.6 V during 16 A transients, preventing damage to MCU power supplies and CAN transceivers. | Use Scenario: Safeguarding analog front-ends of pressure/temperature sensors in factory automation PLCs. IC Role / Device Role / Timing Role: TVS mounted at connector entry to shunt ESD (IEC 61000-4-2) and cable discharge events. Use Value: Sub-1 ns response and ≤1 µA leakage preserve signal integrity and measurement accuracy in 24 V sensor loops. |
| Telecom Line Surge Protection | Motor Drive DC Bus Protection |
Use Scenario: Shielding RS-485/RS-232 data lines in outdoor base stations from lightning-induced surges. IC Role / Device Role / Timing Role: Bidirectional-capable variant used (SMCJ58CA), but SMCJ58AHE3_A/I serves as unidirectional alternative for grounded-line configurations. Use Value: 1500 W rating handles multi-kV induced transients while maintaining low capacitance (<100 pF) to avoid signal distortion. | Use Scenario: Protecting IGBT gate drivers and bootstrap circuits in HVAC inverter drives from switching noise and cross-talk. IC Role / Device Role / Timing Role: TVS placed across gate-source or supply-ground nodes to suppress dV/dt-induced false turn-on. Use Value: Stable VBR temperature coefficient (0.104 %/°C) ensures consistent clamping across wide operating temperatures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ58A-E3/57T | Lower PPPM (400 W), smaller SMA package, higher RθJA (110 °C/W) | Suitable for lower-energy surges (e.g., IEC 61000-4-5 Level 2), not for automotive load dump. | Select when space-constrained and surge energy is ≤400 W; verify thermal derating on small pads. |
| SMCJ58CAHE3_A/I | Bidirectional version; identical VWM, VBR, VC, and PPPM, but symmetric clamping in both polarities. | Required for AC-coupled or floating signal lines (e.g., Ethernet PHY, USB D+/D−); not needed for grounded DC rails. | Choose bidirectional only if circuit lacks defined polarity or requires protection against reverse surges. |
Compared with SMAJ58A-E3/57T and SMCJ58CAHE3_A/I, the SMCJ58AHE3_A/I provides the highest surge energy handling (1500 W) in an automotive-qualified SMC package, making it optimal for demanding DC rail protection where thermal robustness and AEC-Q101 compliance are mandatory.
Availability
SMCJ58AHE3_A/I is available at Aetrix Electronics and suitable for automotive power modules, industrial sensor nodes, telecom infrastructure equipment, and motor drive designs requiring stable component supply with full traceability and long-term lifecycle support.
Supply support for SMCJ58AHE3_A/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, MOSFETs, optoelectronics, and passive components with emphasis on reliability and automotive-grade qualification.
The SMCJ series is part of Vishay's TRANSZORB® TVS platform, engineered specifically for high-energy transient suppression in harsh environments including automotive, industrial, and telecom applications where robustness and consistency are non-negotiable.
FAQ
What is the clamping voltage of SMCJ58AHE3_A/I at its rated peak pulse current?
The SMCJ58AHE3_A/I has a maximum clamping voltage (VC) of 93.6 V at 16 A peak pulse current (IPPM) under the standard 10/1000 µs waveform. This value is measured per JEDEC test conditions and reflects the actual voltage seen by protected circuitry during worst-case surge events - a key parameter for ensuring downstream ICs remain within absolute maximum ratings. The SMCJ58AHE3_A/I maintains this clamping performance across its full operating temperature range.
Is SMCJ58AHE3_A/I qualified for automotive applications?
Yes, the SMCJ58AHE3_A/I is AEC-Q101 qualified, as confirmed by Vishay's ordering code suffix "HE3" and documentation in the SMCJ5.0A–SMCJ188CA datasheet (Document Number 88394, Revision 09-Jan-2024). This qualification covers stress tests including high-temperature operating life, temperature cycling, and ESD - validating its suitability for under-hood and chassis-mounted automotive electronics. The SMCJ58AHE3_A/I is explicitly designated for automotive use in Vishay's material categorization and packaging notes.
What is the package type and mounting specification for SMCJ58AHE3_A/I?
The SMCJ58AHE3_A/I uses the SMC (DO-214AB) surface-mount package, with dimensions of 7.75 mm × 6.22 mm × 2.62 mm and matte tin-plated leads. It is rated for MSL Level 1 per J-STD-020 and supports peak reflow temperatures up to 260 °C. Recommended mounting uses 0.31" × 0.31" (8.0 mm × 8.0 mm) copper pads per terminal to achieve specified thermal and surge performance. The cathode is marked by a visible band on the device body.
How does the temperature coefficient affect SMCJ58AHE3_A/I's breakdown voltage stability?
The SMCJ58AHE3_A/I has a typical temperature coefficient of VBR of +0.104 %/°C, meaning its breakdown voltage increases linearly with junction temperature. At +125 °C, VBR rises by approximately 10.4 % above its 25 °C value - from 64.4–71.2 V to ~71–78.6 V. This predictable drift allows designers to maintain safe margins in high-temperature environments like engine compartments. The coefficient is verified per ANSI/IEEE C62.35 and applies uniformly across the SMCJ family, including the SMCJ58AHE3_A/I.
Can SMCJ58AHE3_A/I be used in bidirectional protection circuits?
No - the SMCJ58AHE3_A/I is a unidirectional TVS diode, intended for DC circuits with defined polarity (cathode to protected line, anode to ground). For bidirectional protection - such as AC lines, differential data buses, or floating references - the bidirectional variant SMCJ58CAHE3_A/I must be used. While both share identical VWM, VBR, and PPPM, the SMCJ58AHE3_A/I lacks symmetrical clamping capability and will conduct continuously if reverse-biased beyond its VWM. This functional distinction is clearly specified in Vishay's datasheet Table "DEVICE TYPE".
SMCJ58AHE3_A/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AB, SMC
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 58V
- Voltage - Breakdown (Min):
- 64.4V
- Voltage - Clamping (Max) @ Ipp:
- 93.6V
- Current - Peak Pulse (10/1000µs):
- 16A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AB (SMCJ)
SMCJ58AHE3_A/I FAQ
1.How can I place an order for SMCJ58AHE3_A/I through Aetrix?
Please submit a Request for Quotation (RFQ) for SMCJ58AHE3_A/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMCJ58AHE3_A/I reliable?
The price and inventory of SMCJ58AHE3_A/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMCJ58AHE3_A/I is usually 5 days.
3.What payment methods are accepted for SMCJ58AHE3_A/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMCJ58AHE3_A/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMCJ58AHE3_A/I?
SMCJ58AHE3_A/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMCJ58AHE3_A/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMCJ58AHE3_A/I?
For technical support, including SMCJ58AHE3_A/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMCJ58AHE3_A/I requirements.
6.How does Aetrix verify that SMCJ58AHE3_A/I is sourced from the original manufacturer or authorized distributors?
All SMCJ58AHE3_A/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMCJ58AHE3_A/I meets industry standards.
7.What is the process for return or replacement of SMCJ58AHE3_A/I?
All SMCJ58AHE3_A/I units undergo pre-shipment inspection (PSI). If there is an issue with SMCJ58AHE3_A/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMCJ58AHE3_A/I part is unused and in its original packaging.
Return procedure for SMCJ58AHE3_A/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMCJ58AHE3_A/I Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
