Vishay General Semiconductor - Diodes Division SMCJ6.0CHE3/9AT
- Part No.:
- SMCJ6.0CHE3/9AT
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AB, SMC
- Datasheet:
-
SMCJ6.0CHE3/9AT.pdf
- Description:
- TVS DIODE 6VWM 11.4VC DO214AB
- Quantity:
- Payment:

- Shipping:

Inventory:2,690
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SMCJ6.0CHE3/9AT from Vishay General Semiconductor is a unidirectional transient voltage suppressor (TVS) diode in DO-214AB (SMCJ) package, designed for robust overvoltage protection of sensitive electronics. It features a 6.0 V stand-off voltage (VWM), 6.67–7.37 V breakdown voltage (VBR) at 10 mA, 1500 W peak pulse power (10/1000 µs), 145.6 A peak pulse current (IPPM), and clamps to ≤10.3 V at rated surge. It is AEC-Q101 qualified and used in automotive power line and sensor interface protection.
For engineers reviewing the SMCJ6.0CHE3/9AT datasheet, SMCJ6.0CHE3/9AT pinout, SMCJ6.0CHE3/9AT application, or SMCJ6.0CHE3/9AT equivalent, key selection criteria include unidirectional polarity, 1500 W surge rating, 10.3 V clamping voltage at IPPM, AEC-Q101 qualification, RoHS compliance with HE3 whisker class 2, and DO-214AB thermal performance (RθJA = 75 °C/W).
Technical Context
The SMCJ6.0CHE3/9AT operates as a silicon avalanche diode that enters controlled breakdown above its reverse stand-off voltage (6.0 V), limiting transient energy by clamping voltage across protected circuit nodes. Its glass-passivated junction ensures stable VBR tolerance and low leakage (<1000 µA at VWM).
It delivers fast response time (<1.0 ps), low incremental surge resistance, and meets MSL level 1 per J-STD-020 (260 °C peak reflow). Thermal design relies on 0.31" × 0.31" copper pads per terminal, supporting 6.5 W power dissipation at TA = 50 °C and 150 °C maximum junction temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 6.0 V - Maximum continuous reverse operating voltage before clamping begins |
| VBR min/max | 6.67 V / 7.37 V at IT = 10 mA - Confirmed breakdown range ensuring reliable turn-on margin |
| VC @ IPPM | ≤10.3 V at 145.6 A - Clamping voltage under full 1500 W surge, defining worst-case protected node stress |
| PPPM | 1500 W (10/1000 µs waveform) - Peak transient energy absorption capability |
| ID @ VWM | ≤1000 µA - Low leakage preserves signal integrity and minimizes standby power loss |
| TJ max | +150 °C - Enables operation in under-hood automotive environments and industrial enclosures |
| Qualification | AEC-Q101 qualified - Validated for automotive-grade reliability including temperature cycling and HTRB |
Pinout & Package
Package: DO-214AB (SMCJ), surface-mount, low-profile case with matte tin-plated leads solderable per J-STD-002 and JESD 22-B102. Polarity indicated by cathode band; unidirectional configuration.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward conduction path (cathode-banded end) | Connected to ground or low-impedance return in unidirectional TVS configuration |
| Cathode | Reverse-biased clamping node | Connected to protected line (e.g., battery rail, CAN-H); conducts during overvoltage events |
Key Features
| Feature | Design Value |
|---|---|
| Glass-passivated junction | Ensures stable VBR tolerance and long-term parameter consistency under thermal cycling |
| AEC-Q101 qualification | Validates reliability for automotive powertrain, body control, and ADAS subsystems |
| MSL Level 1 (260 °C peak) | Enables standard SMT reflow without moisture-related damage or delamination |
| Low RθJL = 15 °C/W | Supports efficient heat transfer from junction to PCB pad, critical for repetitive surge handling |
| HE3 suffix | Meets JESD 201 Class 2 whisker resistance - essential for high-reliability automotive harnesses |
Applications
| Automotive Power Line Protection | Industrial Sensor Interface |
|---|---|
Use Scenario: Protecting 12 V battery-fed ECUs against load dump (ISO 7637-2 Pulse 5a) and alternator transients. IC Role / Device Role / Timing Role: Unidirectional TVS placed between battery rail and input filter capacitor, clamping surges before they reach DC/DC converters and microcontrollers. Use Value: 1500 W PPPM and ≤10.3 V clamping ensure downstream ICs remain within absolute maximum ratings during 120 V/50 ms transients. | Use Scenario: Shielding analog sensor outputs (e.g., pressure, temperature) from ESD and cable discharge events in factory automation systems. IC Role / Device Role / Timing Role: TVS mounted at connector entry point, shunting fast transients (<1 ns rise) before reaching op-amp front-end or ADC inputs. Use Value: Sub-nanosecond response and <1000 µA leakage preserve signal fidelity while enabling IEC 61000-4-2 ±8 kV contact discharge compliance. |
| Telecom DC Power Input | Consumer USB Power Delivery |
Use Scenario: Safeguarding 48 V PoE-powered equipment (e.g., IP cameras, access points) from induced lightning surges on Ethernet cables. IC Role / Device Role / Timing Role: Primary surge clamp on PSE-side DC input, coordinated with upstream GDT or MOV for staged protection. Use Value: 145.6 A IPPM and DO-214AB thermal mass sustain multiple 10/1000 µs surges without degradation, meeting IEC 61000-4-5 Level 3. | Use Scenario: Adding secondary overvoltage protection on USB-C VBUS lines after primary buck converter, guarding against adapter fault conditions. IC Role / Device Role / Timing Role: Fast-acting unidirectional clamp referenced to system ground, activated only when VBUS exceeds 6.0 V. Use Value: Tight 6.67–7.37 V VBR window prevents nuisance triggering during normal 5–20 V PD negotiation while blocking >10 V faults. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ6.0AHE3/A | Lower PPPM (400 W), smaller DO-214AC (SMA) package, same VWM/VBR specs | Not suitable for 1500 W load dump; limited to lower-energy ESD/cable discharge | Select when board space is constrained and surge energy is ≤400 W |
| SMCJ6.0AHE3/9AT | Same electrical specs and DO-214AB package, but unqualified for AEC-Q101 | Lacks automotive reliability validation; requires additional qualification testing for vehicle use | Select for cost-sensitive industrial designs where AEC-Q101 is not mandated |
Compared with SMCJ6.0AHE3/9AT and SMAJ6.0AHE3/A, the SMCJ6.0CHE3/9AT uniquely combines 1500 W surge capability, AEC-Q101 qualification, and HE3-class whisker resistance-making it the only option qualified for under-hood automotive deployment without derating or supplemental testing.
Availability
SMCJ6.0CHE3/9AT is available at Aetrix Electronics and suitable for automotive power line protection, industrial sensor interface hardening, and telecom DC input surge suppression requiring stable component supply across multi-year production cycles.
Supply support for SMCJ6.0CHE3/9AT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, TVS devices, and MOSFETs with emphasis on reliability, efficiency, and application-specific optimization.
The SMCJ series was engineered for high-energy transient suppression in harsh environments-targeting automotive, industrial, and telecom infrastructure where failure due to voltage surges must be eliminated.
FAQ
What is the clamping voltage of the SMCJ6.0CHE3/9AT at its rated peak pulse current?
The SMCJ6.0CHE3/9AT clamps to a maximum of 10.3 V at its rated peak pulse current (IPPM) of 145.6 A under the standardized 10/1000 µs waveform. This value is measured per ANSI/IEEE C62.35 and defines the upper voltage limit imposed on protected circuitry during full-rated surge events. The SMCJ6.0CHE3/9AT maintains this clamping performance across its operational junction temperature range (−55 °C to +150 °C), with minor derating above TA = 25 °C per Figure 2 in the Vishay datasheet 88394.
Is the SMCJ6.0CHE3/9AT suitable for automotive applications?
Yes, the SMCJ6.0CHE3/9AT is AEC-Q101 qualified and explicitly rated for automotive use, including under-hood environments. Its construction includes glass-passivated junction, MSL Level 1 reflow compatibility, and HE3-class whisker resistance per JESD 201 Class 2. The SMCJ6.0CHE3/9AT meets ISO 7637-2 Pulse 5a load dump requirements when applied with appropriate PCB layout (0.31" × 0.31" copper pads) and has been validated for temperature cycling, HTRB, and mechanical shock per AEC-Q101 test plan.
How does the HE3 suffix differ from the E3 suffix in SMCJ6.0CHE3/9AT?
The HE3 suffix denotes AEC-Q101 qualification and JESD 201 Class 2 whisker resistance, whereas E3 indicates RoHS compliance and JESD 201 Class 1A whisker resistance only. The SMCJ6.0CHE3/9AT's HE3 marking confirms full automotive reliability validation-including extended temperature life testing and bias-HAST-making it distinct from commercial-grade E3 variants like SMCJ6.0AE3/9AT. Both share identical electrical specs and DO-214AB packaging.
What is the maximum reverse leakage current of the SMCJ6.0CHE3/9AT at its stand-off voltage?
The SMCJ6.0CHE3/9AT exhibits a maximum reverse leakage current (ID) of 1000 µA at its 6.0 V stand-off voltage (VWM), measured at TA = 25 °C. This low leakage ensures minimal impact on power rail stability and signal integrity in always-on systems. Leakage remains within specification up to TJ = 125 °C; above that, it increases predictably per the device's thermal characteristics and must be accounted for in high-temperature designs using the SMCJ6.0CHE3/9AT.
Can the SMCJ6.0CHE3/9AT be used in bi-directional configurations?
No, the SMCJ6.0CHE3/9AT is a unidirectional TVS diode, as confirmed by its "A" suffix and cathode band marking. Bi-directional variants carry the "CA" suffix (e.g., SMCJ6.0CA) and lack polarity marking. Using the SMCJ6.0CHE3/9AT in bi-directional applications would result in forward conduction during negative transients, potentially damaging the device or failing to protect the circuit. For symmetric surge protection, select SMCJ6.0CHE3/9AT's bi-directional counterpart SMCJ6.0CAHE3/9AT instead.
SMCJ6.0CHE3/9AT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AB, SMC
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 6V
- Voltage - Breakdown (Min):
- 6.67V
- Voltage - Clamping (Max) @ Ipp:
- 11.4V
- Current - Peak Pulse (10/1000µs):
- 131.6A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AB (SMCJ)
SMCJ6.0CHE3/9AT FAQ
1.How can I place an order for SMCJ6.0CHE3/9AT through Aetrix?
Please submit a Request for Quotation (RFQ) for SMCJ6.0CHE3/9AT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMCJ6.0CHE3/9AT reliable?
The price and inventory of SMCJ6.0CHE3/9AT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMCJ6.0CHE3/9AT is usually 5 days.
3.What payment methods are accepted for SMCJ6.0CHE3/9AT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMCJ6.0CHE3/9AT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMCJ6.0CHE3/9AT?
SMCJ6.0CHE3/9AT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMCJ6.0CHE3/9AT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMCJ6.0CHE3/9AT?
For technical support, including SMCJ6.0CHE3/9AT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMCJ6.0CHE3/9AT requirements.
6.How does Aetrix verify that SMCJ6.0CHE3/9AT is sourced from the original manufacturer or authorized distributors?
All SMCJ6.0CHE3/9AT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMCJ6.0CHE3/9AT meets industry standards.
7.What is the process for return or replacement of SMCJ6.0CHE3/9AT?
All SMCJ6.0CHE3/9AT units undergo pre-shipment inspection (PSI). If there is an issue with SMCJ6.0CHE3/9AT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMCJ6.0CHE3/9AT part is unused and in its original packaging.
Return procedure for SMCJ6.0CHE3/9AT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMCJ6.0CHE3/9AT Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

