My Inquiry
My Account
Vishay General Semiconductor - Diodes Division SMCJ6.0-E3/57T
- Part No.:
- SMCJ6.0-E3/57T
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AB, SMC
- Datasheet:
-
SMCJ6.0-E3/57T.pdf
- Description:
- TVS DIODE 6VWM 11.4VC DO214AB
- Quantity:
- Payment:
- Shipping:
Inventory:2,467
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SMCJ6.0-E3/57T from Vishay General Semiconductor is a unidirectional transient voltage suppressor (TVS) diode in DO-214AB (SMCJ) package, designed for robust overvoltage protection of sensitive electronics. It features a 6.0 V stand-off voltage (VWM), 6.67–7.37 V breakdown voltage (VBR) at 10 mA, 1500 W peak pulse power (10/1000 µs), 145.6 A peak pulse current (IPPM), and clamps to ≤10.3 V at rated surge. It is widely deployed in automotive power line and sensor interface protection.
For engineers reviewing the SMCJ6.0-E3/57T datasheet, SMCJ6.0-E3/57T pinout, SMCJ6.0-E3/57T application, or SMCJ6.0-E3/57T equivalent, key selection criteria include unidirectional polarity, 1500 W surge rating, DO-214AB thermal performance (RθJA = 75 °C/W), AEC-Q101 qualification, and RoHS-compliant matte tin terminations per J-STD-002.
Technical Context
The SMCJ6.0-E3/57T operates as a silicon avalanche diode with glass-passivated junction, delivering fast response (<1 ns) to transient events such as ESD, load dump, and inductive switching spikes. Its unidirectional configuration provides forward conduction capability (VF = 3.5 V at 100 A) and reverse clamping action above VBR.
Thermally, it supports operation from –55 °C to +150 °C junction temperature, with derated power dissipation above 25 °C ambient and thermal resistance of 15 °C/W junction-to-lead. It meets MSL Level 1 per J-STD-020 and passes JESD201 Class 1A whisker testing.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 6.0 V - Maximum continuous reverse operating voltage before clamping begins |
| VBR min/max | 6.67 V / 7.37 V at 10 mA - Confirmed avalanche onset range under standardized test conditions |
| VC @ IPPM | ≤10.3 V at 145.6 A - Clamped voltage during 10/1000 µs surge, defining maximum stress on protected circuit |
| PPPM | 1500 W - Peak surge power handling capacity, critical for automotive load-dump immunity |
| ID @ VWM | 1000 µA max - Low leakage ensures minimal standby power loss in battery-powered systems |
| TJ max | +150 °C - Enables use in under-hood automotive environments without derating penalties |
| Package | DO-214AB (SMCJ) - Industry-standard surface-mount outline with 8.0 mm × 8.0 mm copper pad thermal requirement |
Pinout & Package
DO-214AB (SMCJ) package: low-profile, rectangular body with J-bend leads; cathode indicated by band; matte tin-plated terminals solderable per J-STD-002; UL 94 V-0 molding compound.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward conduction path | Connects to lower-potential side in unidirectional protection; enables 3.5 V forward drop at 100 A |
| Cathode (banded end) | Clamping reference node | Connected to protected line; avalanche conduction initiates when reverse voltage exceeds VBR |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD testing per JEDEC standards |
| Glass passivated junction | Ensures stable VBR tolerance and long-term stability under thermal and humidity stress |
| MSL Level 1 (260 °C peak) | Enables standard reflow assembly without moisture sensitivity concerns |
| JESD201 Class 1A whisker resistance | Prevents tin whisker growth in high-reliability applications over extended service life |
| Low incremental surge resistance | Minimizes voltage overshoot during fast transients, improving clamping precision |
Applications
| Automotive Power Line Protection | Industrial Sensor Interface |
|---|---|
Use Scenario: Protecting 12 V battery-fed ECUs against ISO 7637-2 Pulse 5a (load dump) and ESD events. IC Role / Device Role / Timing Role: Primary clamping device placed at board-level input, shunting surge energy to ground before reaching downstream regulators and microcontrollers. Use Value: Withstands 1500 W surges and clamps to ≤10.3 V, keeping protected ICs within absolute maximum ratings during 120 V/100 ms transients. | Use Scenario: Safeguarding analog front-end inputs of pressure/temperature sensors in PLC I/O modules exposed to field wiring transients. IC Role / Device Role / Timing Role: Unidirectional TVS placed between signal line and ground, absorbing inductive kickback from solenoid actuation. Use Value: 145.6 A IPPM and low clamping voltage ensure sensor signal integrity remains intact during 1 kV/500 A surge events per IEC 61000-4-5. |
| Consumer USB Power Port | Telecom DC Feeder Line |
Use Scenario: Overvoltage protection on 5 V USB VBUS lines in portable docking stations subject to hot-plug and cable ESD. IC Role / Device Role / Timing Role: Standoff-rated TVS (VWM = 6.0 V) placed directly at connector, conducting only during transients >6.67 V. Use Value: 1000 µA max leakage at 6.0 V prevents excessive quiescent current draw; fast <1 ns response blocks ESD per IEC 61000-4-2 Level 4. | Use Scenario: Secondary protection on -48 V telecom DC feeder lines upstream of DC-DC converters in base station power supplies. IC Role / Device Role / Timing Role: Unidirectional clamp referenced to negative rail, suppressing positive-going surges induced by lightning or switching noise. Use Value: 1500 W rating and 10.3 V clamping limit stress on downstream MOSFETs and controllers during 10/1000 µs surges up to 1 kA. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ6.0A-E3/57T | Lower PPPM (400 W), smaller SMA package (DO-214AC), higher RθJA (~110 °C/W) | Not suitable for automotive load dump; limited to low-energy consumer transients | Select only for space-constrained, non-automotive designs with <400 W surge requirements |
| SMCJ6.0AHE3/57T | Identical electrical specs but AEC-Q101 qualified (HE3 suffix); same DO-214AB package and thermal performance | Required for production automotive applications requiring full qualification documentation | Choose SMCJ6.0AHE3/57T when AEC-Q101 compliance must be formally certified in PPAP submissions |
Compared with SMAJ6.0A-E3/57T and SMCJ6.0AHE3/57T, the SMCJ6.0-E3/57T offers the optimal balance of 1500 W surge capability, DO-214AB thermal robustness, and commercial-grade cost-making it ideal for industrial and Tier-2 automotive designs where full AEC-Q101 documentation is not mandated but high-energy clamping is essential.
Availability
SMCJ6.0-E3/57T is available at Aetrix Electronics and suitable for automotive power line protection, industrial sensor interface hardening, and telecom DC feeder line safeguarding requiring stable component supply across multi-year production cycles.
Supply support for SMCJ6.0-E3/57T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, thermal performance, and automotive qualification.
The SMCJ series belongs to Vishay's TRANSZORB® TVS platform, engineered specifically for high-energy transient suppression in harsh environments-including under-hood automotive, industrial automation, and infrastructure power systems.
FAQ
What is the polarity configuration of the SMCJ6.0-E3/57T?
The SMCJ6.0-E3/57T is a unidirectional transient voltage suppressor diode. Its cathode is marked by a band on the DO-214AB package body. This configuration allows forward conduction (VF = 3.5 V at 100 A) and reverse avalanche clamping above VBR, making it suitable for DC line protection where polarity is fixed. The SMCJ6.0-E3/57T does not conduct in reverse bias below VBR, unlike bi-directional variants that use the "CA" suffix.
Does the SMCJ6.0-E3/57T meet automotive qualification standards?
The SMCJ6.0-E3/57T is RoHS-compliant and manufactured to Vishay's commercial-grade specifications, including MSL Level 1 and JESD201 Class 1A whisker resistance. While it shares the same DO-214AB construction and electrical specs as the AEC-Q101-qualified SMCJ6.0AHE3/57T, the SMCJ6.0-E3/57T itself is not AEC-Q101 certified. For automotive production requiring formal qualification, engineers should specify the HE3-suffixed variant instead of the SMCJ6.0-E3/57T.
What is the maximum clamping voltage of the SMCJ6.0-E3/57T under surge conditions?
The SMCJ6.0-E3/57T has a maximum clamping voltage (VC) of 10.3 V when subjected to its rated peak pulse current (IPPM) of 145.6 A using the standard 10/1000 µs waveform. This value is measured at the device terminals under specified test conditions (mounted on 8.0 mm × 8.0 mm copper pads) and defines the upper voltage limit imposed on the protected circuit during worst-case surge events. The SMCJ6.0-E3/57T maintains this clamping performance across its operational temperature range.
How does the thermal performance of the SMCJ6.0-E3/57T compare to smaller packages like SMAJ?
The SMCJ6.0-E3/57T uses the larger DO-214AB (SMCJ) package, delivering significantly better thermal performance than DO-214AC (SMA) devices: its junction-to-ambient thermal resistance (RθJA) is 75 °C/W versus ~110 °C/W for SMAJ6.0A-E3/57T. This enables higher sustained power dissipation and improved surge survivability in compact layouts. The SMCJ6.0-E3/57T also features lower junction-to-lead resistance (15 °C/W), facilitating heat transfer to PCB copper planes-critical for repeated surge duty cycles.
Can the SMCJ6.0-E3/57T be used in bi-directional protection circuits?
No-the SMCJ6.0-E3/57T is strictly unidirectional and must be oriented with its banded (cathode) end toward the protected line's higher potential. For bi-directional transient suppression-such as AC signal lines or floating buses-engineers must select the CA-suffixed variant (e.g., SMCJ6.0CA). Using the SMCJ6.0-E3/57T in reverse-biased configurations beyond its VWM risks permanent damage, as it lacks symmetrical avalanche characteristics. Always verify polarity alignment before placing the SMCJ6.0-E3/57T in circuit.
SMCJ6.0-E3/57T Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AB, SMC
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 6V
- Voltage - Breakdown (Min):
- 6.67V
- Voltage - Clamping (Max) @ Ipp:
- 11.4V
- Current - Peak Pulse (10/1000µs):
- 131.6A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AB (SMCJ)
SMCJ6.0-E3/57T FAQ
1.How can I place an order for SMCJ6.0-E3/57T through Aetrix?
Please submit a Request for Quotation (RFQ) for SMCJ6.0-E3/57T on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMCJ6.0-E3/57T reliable?
The price and inventory of SMCJ6.0-E3/57T are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMCJ6.0-E3/57T is usually 5 days.
3.What payment methods are accepted for SMCJ6.0-E3/57T?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMCJ6.0-E3/57T transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMCJ6.0-E3/57T?
SMCJ6.0-E3/57T orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMCJ6.0-E3/57T order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMCJ6.0-E3/57T?
For technical support, including SMCJ6.0-E3/57T datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMCJ6.0-E3/57T requirements.
6.How does Aetrix verify that SMCJ6.0-E3/57T is sourced from the original manufacturer or authorized distributors?
All SMCJ6.0-E3/57T products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMCJ6.0-E3/57T meets industry standards.
7.What is the process for return or replacement of SMCJ6.0-E3/57T?
All SMCJ6.0-E3/57T units undergo pre-shipment inspection (PSI). If there is an issue with SMCJ6.0-E3/57T, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMCJ6.0-E3/57T part is unused and in its original packaging.
Return procedure for SMCJ6.0-E3/57T:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMCJ6.0-E3/57T Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
