Vishay General Semiconductor - Diodes Division SMCJ6.0-E3/9AT
- Part No.:
- SMCJ6.0-E3/9AT
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AB, SMC
- Datasheet:
-
SMCJ6.0-E3/9AT.pdf
- Description:
- TVS DIODE 6VWM 11.4VC DO214AB
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
SMCJ6.0-E3/9AT from Vishay General Semiconductor is a unidirectional transient voltage suppressor (TVS) diode in DO-214AB (SMCJ) package, designed for robust overvoltage protection of sensitive electronics. It features a 6.0 V stand-off voltage (VWM), 6.67–7.37 V breakdown voltage (VBR) at 10 mA, 1500 W peak pulse power (10/1000 µs), 10.3 V clamping voltage at 145.6 A IPPM, and AEC-Q101 qualification for automotive-grade reliability.
For engineers reviewing the SMCJ6.0-E3/9AT datasheet, SMCJ6.0-E3/9AT pinout, SMCJ6.0-E3/9AT application, or SMCJ6.0-E3/9AT equivalent, key selection criteria include clamping performance under 10/1000 µs surge, thermal resistance (RθJA = 75 °C/W), unidirectional polarity with cathode band marking, RoHS-compliant matte tin plating, and compatibility with automated SMT placement on 8.0 mm × 8.0 mm copper pads.
Technical Context
The SMCJ6.0-E3/9AT operates as a silicon avalanche diode that enters controlled breakdown when reverse voltage exceeds its VBR range (6.67–7.37 V), limiting transient energy to downstream circuitry. Its low incremental surge resistance and very fast response time (<1 ns) enable effective suppression of ESD, lightning-induced surges, and inductive switching spikes.
It is rated for 1500 W peak pulse power (10/1000 µs waveform), derates linearly above TA = 25 °C per Fig. 2, and supports continuous operation up to TJ = 150 °C. The device meets MSL Level 1 (JEDEC J-STD-020) and passes JESD 201 Class 1A whisker testing, confirming suitability for high-reliability surface-mount assembly.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 6.0 V - Maximum reverse working voltage before clamping begins; ensures no conduction during normal 5–6 V rail operation. |
| VBR (min/max) | 6.67 V / 7.37 V at IT = 10 mA - Confirmed breakdown threshold window; defines minimum overvoltage level triggering protection. |
| VC @ IPPM | 10.3 V at 145.6 A - Clamped voltage during full-rated 1500 W surge; determines maximum stress on protected IC or MOSFET. |
| PPPM | 1500 W (10/1000 µs) - Peak surge handling capability; validates immunity to IEC 61000-4-5 Level 4 (4 kV) transients when properly mounted. |
| ID @ VWM | 1000 µA max - Low leakage current at stand-off voltage; avoids excessive quiescent power loss in battery-powered systems. |
| TJ max | +150 °C - Maximum junction temperature; enables use in under-hood automotive environments and industrial enclosures. |
| RθJA | 75 °C/W - Thermal resistance junction-to-ambient; informs heatsinking requirements when operating near PD = 6.5 W limit. |
Pinout & Package
Package: DO-214AB (SMCJ), surface-mount, low-profile, glass passivated chip junction. Cathode indicated by molded band on one end; anode is opposite terminal. Matte tin-plated leads, solderable per J-STD-002 and JESD 22-B102.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Cathode (banded end) | Reverse-biased terminal | Connects to protected line (e.g., 6 V supply rail); conducts during overvoltage to shunt surge current to ground. |
| Anode (unmarked end) | Reference/ground return | Typically tied to system ground or low-impedance return path; completes clamping loop during transient events. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive applications including engine control units, body electronics, and ADAS sensor interfaces. |
| MSL Level 1 (260 °C peak) | Compatible with standard lead-free reflow profiles without moisture sensitivity concerns or baking requirements. |
| Glass passivated junction | Enhances long-term reliability and stability of VBR and leakage under thermal cycling and humidity stress. |
| Low incremental surge resistance | Minimizes voltage overshoot during fast-rising transients, improving protection margin for 3.3 V or 5 V logic interfaces. |
| RoHS-compliant (E3 suffix) | Meets EU Directive 2011/65/EU; contains no lead, mercury, cadmium, hexavalent chromium, PBB, or PBDE. |
Applications
| Automotive Power Line Protection | Industrial Sensor Interface Protection |
|---|---|
Use Scenario: Protecting 6 V supply lines feeding microcontrollers or CAN transceivers in automotive body control modules. IC Role / Device Role / Timing Role: Unidirectional TVS placed between VCC and GND to clamp load-dump and jump-start transients. Use Value: Limits voltage to ≤10.3 V during 145.6 A surge, preventing latch-up or gate oxide damage in downstream 6 V-rated ICs. | Use Scenario: Safeguarding analog input pins of industrial temperature or pressure sensors exposed to motor drive noise. IC Role / Device Role / Timing Role: Placed across sensor signal and reference lines to absorb coupled EFT bursts and inductive kickback. Use Value: Sub-100 ps response ensures clamping before sensitive ADC front-ends experience destructive overvoltage. |
| Consumer DC Power Input Protection | Telecom Equipment Surge Suppression |
Use Scenario: Securing 5–6 V USB-C PD adapter outputs against accidental AC mains coupling or hot-swap surges. IC Role / Device Role / Timing Role: Primary overvoltage guard on input side of buck converter or LDO regulator. Use Value: 1500 W rating handles repetitive 10/1000 µs surges per IEC 61000-4-5, extending field life of consumer power supplies. | Use Scenario: Front-end protection for Ethernet PHY power rails and data lines in base station remote radio units. IC Role / Device Role / Timing Role: Mounted on PCB edge connectors to divert lightning-induced common-mode surges before entering ASICs. Use Value: AEC-Q101 qualification and 150 °C TJ rating support operation in sealed outdoor telecom enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ6.0A-E3/61T | Lower PPPM (400 W), smaller SMA package (DO-214AC), higher RθJA (~100 °C/W). | Suitable only for lower-energy transients (IEC 61000-4-2 ESD, not full IEC 61000-4-5), space-constrained layouts. | Select SMCJ6.0-E3/9AT when 1500 W surge immunity and thermal robustness are required; SMAJ6.0A-E3/61T is a footprint-downgraded alternative. |
| SMCJ6.0CA-E3/9AT | Bi-directional version; same VWM (6.0 V), symmetric VBR (6.67–7.37 V), identical PPPM and VC. | Required for AC-coupled or bidirectional signal lines (e.g., RS-485, CAN FD), where polarity reversal occurs. | Choose SMCJ6.0CA-E3/9AT only if protecting bidirectional signals; SMCJ6.0-E3/9AT is optimal for DC power rails with defined polarity. |
Compared with SMAJ6.0A-E3/61T and SMCJ6.0CA-E3/9AT, the SMCJ6.0-E3/9AT delivers superior surge energy handling and thermal performance in a unidirectional configuration, making it the preferred choice for automotive and industrial 6 V power rail protection where layout space permits the larger SMCJ package.
Availability
SMCJ6.0-E3/9AT is available at Aetrix Electronics and suitable for automotive ECUs, industrial sensor nodes, and telecom power supplies requiring stable component supply, AEC-Q101 compliance, and 1500 W transient immunity.
Supply support for SMCJ6.0-E3/9AT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, efficiency, and automotive qualification.
The SMCJ series is part of Vishay's TRANSZORB® TVS platform, engineered specifically for high-energy transient suppression in harsh environments-targeting automotive, industrial, and telecom infrastructure applications demanding AEC-Q101 validation and robust surge endurance.
FAQ
What is the clamping voltage of the SMCJ6.0-E3/9AT at its rated peak pulse current?
The SMCJ6.0-E3/9AT has a maximum clamping voltage (VC) of 10.3 V at its rated peak pulse current (IPPM) of 145.6 A, measured using a 10/1000 µs waveform. This value defines the upper voltage limit imposed on protected circuitry during a full 1500 W transient event and is critical for ensuring downstream components remain within their absolute maximum ratings. The SMCJ6.0-E3/9AT maintains this clamping performance across its specified operating temperature range.
Is the SMCJ6.0-E3/9AT suitable for automotive applications?
Yes, the SMCJ6.0-E3/9AT is AEC-Q101 qualified and explicitly rated for automotive use, including under-hood environments. Its 150 °C maximum junction temperature, MSL Level 1 reflow compatibility, and JESD 201 Class 1A whisker resistance support deployment in engine control units, body electronics, and ADAS sensor modules. The SMCJ6.0-E3/9AT meets the reliability and thermal demands of automotive-grade production.
How does the SMCJ6.0-E3/9AT differ from the bi-directional SMCJ6.0CA-E3/9AT?
The SMCJ6.0-E3/9AT is unidirectional with a cathode band marking and blocks forward current, while the SMCJ6.0CA-E3/9AT is bi-directional with no polarity marking and clamps in both directions. Both share identical VWM (6.0 V), VBR (6.67–7.37 V), PPPM (1500 W), and VC (10.3 V), but the SMCJ6.0-E3/9AT is intended for DC power rail protection, whereas the CA variant suits AC or bidirectional signal lines like RS-485. Selecting the correct version avoids unintended conduction.
What is the recommended PCB pad layout for optimal thermal and surge performance of the SMCJ6.0-E3/9AT?
Vishay specifies mounting the SMCJ6.0-E3/9AT on 0.31" × 0.31" (8.0 mm × 8.0 mm) copper pads per terminal to achieve rated PPPM and thermal dissipation. This layout minimizes thermal resistance and ensures reliable current spreading during 145.6 A surge events. Smaller pads reduce surge capability and increase junction temperature; the SMCJ6.0-E3/9AT must be placed per the DO-214AB outline drawing with cathode band orientation verified pre-reflow.
Does the SMCJ6.0-E3/9AT meet RoHS and lead-free assembly requirements?
Yes, the "E3" suffix confirms the SMCJ6.0-E3/9AT is RoHS-compliant per Directive 2011/65/EU and compatible with lead-free reflow processes. Its matte tin-plated leads meet J-STD-002 solderability standards and JESD 201 Class 1A whisker testing. The SMCJ6.0-E3/9AT is supplied in 13" tape-and-reel (9AT) packaging, supporting high-volume automated placement without post-assembly cleaning or special handling.
SMCJ6.0-E3/9AT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AB, SMC
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 6V
- Voltage - Breakdown (Min):
- 6.67V
- Voltage - Clamping (Max) @ Ipp:
- 11.4V
- Current - Peak Pulse (10/1000µs):
- 131.6A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AB (SMCJ)
SMCJ6.0-E3/9AT FAQ
1.How can I place an order for SMCJ6.0-E3/9AT through Aetrix?
Please submit a Request for Quotation (RFQ) for SMCJ6.0-E3/9AT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMCJ6.0-E3/9AT reliable?
The price and inventory of SMCJ6.0-E3/9AT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMCJ6.0-E3/9AT is usually 5 days.
3.What payment methods are accepted for SMCJ6.0-E3/9AT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMCJ6.0-E3/9AT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMCJ6.0-E3/9AT?
SMCJ6.0-E3/9AT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMCJ6.0-E3/9AT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMCJ6.0-E3/9AT?
For technical support, including SMCJ6.0-E3/9AT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMCJ6.0-E3/9AT requirements.
6.How does Aetrix verify that SMCJ6.0-E3/9AT is sourced from the original manufacturer or authorized distributors?
All SMCJ6.0-E3/9AT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMCJ6.0-E3/9AT meets industry standards.
7.What is the process for return or replacement of SMCJ6.0-E3/9AT?
All SMCJ6.0-E3/9AT units undergo pre-shipment inspection (PSI). If there is an issue with SMCJ6.0-E3/9AT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMCJ6.0-E3/9AT part is unused and in its original packaging.
Return procedure for SMCJ6.0-E3/9AT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMCJ6.0-E3/9AT Tags

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Diodes Incorporated

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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