Vishay General Semiconductor - Diodes Division SMCJ64CHE3/9AT
- Part No.:
- SMCJ64CHE3/9AT
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AB, SMC
- Datasheet:
-
SMCJ64CHE3/9AT.pdf
- Description:
- TVS DIODE 64VWM 114VC DO214AB
- Quantity:
- Payment:

- Shipping:

Inventory:2,689
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SMCJ64CHE3/9AT from Vishay General Semiconductor is a unidirectional transient voltage suppressor (TVS) diode in DO-214AB (SMCJ) package, designed for robust overvoltage protection of sensitive electronics. It features a 64 V standoff voltage (VWM), 71.1–78.6 V breakdown voltage (VBR) at 1 mA, 1500 W peak pulse power (10/1000 µs), 103 V clamping voltage at 14.6 A surge current, and AEC-Q101 qualification for automotive-grade reliability.
For engineers reviewing the SMCJ64CHE3/9AT datasheet, SMCJ64CHE3/9AT pinout, SMCJ64CHE3/9AT application, or SMCJ64CHE3/9AT equivalent, this device is selected for high-energy transient suppression on DC power rails, MOSFET gate drivers, and automotive sensor interfaces where low clamping voltage, fast response (<1 ns), and stable thermal performance up to 150 °C junction temperature are critical.
Technical Context
The SMCJ64CHE3/9AT operates as a unidirectional avalanche diode, triggering when reverse voltage exceeds its VBR range (71.1–78.6 V) and clamping transients to ≤103 V at rated IPPM. Its glass-passivated junction ensures stable leakage (<1 µA at 64 V) and long-term reliability under repetitive surge stress.
Designed for surface-mount assembly on 8.0 mm × 8.0 mm copper pads, it delivers 1500 W peak pulse power with thermal resistance RθJA = 75 °C/W and RθJL = 15 °C/W, enabling effective heat dissipation in compact automotive and industrial PCB layouts without external heatsinking.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 64 V - Maximum continuous reverse operating voltage before conduction begins; defines safe DC rail margin. |
| VBR min/max | 71.1 V / 78.6 V at 1 mA - Confirmed breakdown threshold range; ensures predictable turn-on across temperature and lot variation. |
| VC @ IPPM | 103 V at 14.6 A - Clamped voltage during 10/1000 µs surge; determines maximum stress imposed on protected ICs. |
| PPPM | 1500 W - Peak pulse power handling capability; supports IEC 61000-4-5 Level 4 (4 kV) surge immunity. |
| TJ max | +150 °C - Maximum junction temperature; enables operation in under-hood automotive environments. |
| Leakage ID | ≤1 µA at 64 V - Low reverse leakage preserves system efficiency and prevents false triggering in high-impedance circuits. |
| AEC-Q101 | Qualified - Validated for automotive applications including engine control units, body electronics, and ADAS sensor modules. |
Pinout & Package
Package: DO-214AB (SMCJ), molded plastic case with matte tin-plated leads, RoHS-compliant, MSL level 1 (260 °C peak reflow).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Cathode (banded end) | Surge current sink | Connected to protected line; conducts transient energy to ground during overvoltage events. |
| Anode | Reference/ground return | Typically tied to system ground or low-impedance return path; completes clamping loop during avalanche conduction. |
Key Features
| Feature | Design Value |
|---|---|
| Low incremental surge resistance | Enables tighter clamping (103 V) at high surge currents (14.6 A), reducing voltage overshoot on downstream components. |
| Glass passivated chip junction | Ensures stable electrical parameters and long-term reliability under thermal cycling and humidity exposure per J-STD-020. |
| Fast response time | <1 ns response to transients - protects sensitive CMOS inputs and microcontrollers before damage occurs. |
| MSL Level 1 rating | Allows unlimited floor life and standard reflow without baking; simplifies SMT manufacturing flow. |
| Matte tin plating | Solderable per J-STD-002 and JESD 22-B102; compatible with lead-free and SnPb processes. |
Applications
| Automotive Power Rail Protection | Industrial Sensor Interface Protection |
|---|---|
Use Scenario: Protecting 12 V/24 V battery-fed ECUs against load dump (ISO 7637-2 Pulse 5a) and alternator switching transients. IC Role / Device Role / Timing Role: Unidirectional TVS placed between power input and ground, clamping surges before they reach LDOs and microcontrollers. Use Value: Withstands 1500 W pulses and maintains clamping below 103 V, preventing latch-up or permanent damage in AEC-Q100 Grade 2 systems. | Use Scenario: Shielding analog sensor outputs (e.g., pressure, temperature) in factory automation PLCs from ESD and inductive kickback. IC Role / Device Role / Timing Role: Connected across signal line and ground to shunt fast transients while preserving signal integrity via low capacitance (<100 pF typical). Use Value: Sub-1 ns response and ≤1 µA leakage ensure no DC offset or noise injection into precision 4–20 mA or 0–10 V sensor circuits. |
| DC-DC Converter Input Protection | MOSFET Gate Driver Protection |
Use Scenario: Safeguarding buck/boost converter inputs in telecom power supplies exposed to lightning-induced surges (IEC 61000-4-5). IC Role / Device Role / Timing Role: Mounted directly at converter input terminals to clamp incoming transients before bulk capacitors and controller ICs. Use Value: 1500 W PPPM rating and 75 °C/W RθJA allow sustained surge handling without thermal runaway in enclosed enclosures. | Use Scenario: Preventing gate oxide rupture in high-side N-channel MOSFETs driven by microcontrollers in motor control inverters. IC Role / Device Role / Timing Role: Placed between gate and source to clamp Miller-induced voltage spikes during switching transitions. Use Value: Tight VBR tolerance (±5.5%) and low clamping ratio (VC/VBR ≈ 1.36) limit gate stress to safe levels even at 150 °C junction temperature. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ64A-E3/61T | Lower PPPM (400 W), smaller SMA package (DO-214AC), higher VC (104 V at 3.8 A) | Suitable only for lower-energy transients (IEC 61000-4-2 ESD); not rated for ISO 7637-2 load dump | Select when board space is constrained and surge energy is limited to <50 mJ. |
| 1.5KE68A | Through-hole TO-218 package, same VWM (68 V), higher VC (118 V at 12.7 A), non-AEC-Q101 | Lacks automotive qualification; requires wave soldering; less suitable for high-vibration environments | Choose for legacy through-hole designs or cost-sensitive industrial applications without automotive requirements. |
Compared with SMAJ64A-E3/61T and 1.5KE68A, the SMCJ64CHE3/9AT delivers 3.75× higher surge power handling, AEC-Q101 qualification, and surface-mount compatibility-making it the preferred choice for next-generation automotive and high-reliability industrial power protection where clamping performance, thermal robustness, and manufacturability are jointly critical.
Availability
SMCJ64CHE3/9AT is available at Aetrix Electronics and suitable for automotive power rail protection, industrial sensor interface hardening, and DC-DC converter input surge suppression requiring stable component supply across extended production lifecycles.
Supply support for SMCJ64CHE3/9AT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, efficiency, and application-specific optimization.
The SMCJ series belongs to Vishay's TRANSZORB® TVS platform, engineered specifically for high-energy transient suppression in automotive, industrial, and telecom infrastructure where consistent clamping, low leakage, and AEC-Q101 compliance are mandatory.
FAQ
What is the maximum clamping voltage of the SMCJ64CHE3/9AT at its rated peak pulse current?
The SMCJ64CHE3/9AT has a maximum clamping voltage (VC) of 103 V at its rated peak pulse current (IPPM) of 14.6 A under a 10/1000 µs waveform. This value is measured per ANSI/IEEE C62.35 and confirmed in Vishay's datasheet revision 11-Dec-12, ensuring predictable overvoltage limiting for protected circuitry. The SMCJ64CHE3/9AT achieves this clamping performance while maintaining low incremental resistance and thermal stability up to 150 °C junction temperature.
Is the SMCJ64CHE3/9AT suitable for automotive applications?
Yes, the SMCJ64CHE3/9AT is AEC-Q101 qualified and explicitly rated for automotive use, including engine control units, body electronics, and ADAS sensor modules. Its DO-214AB package meets MSL level 1, its glass-passivated junction withstands thermal cycling, and its 1500 W surge rating supports ISO 7637-2 Pulse 5a load dump testing. The SMCJ64CHE3/9AT is manufactured with HE3 suffix indicating AEC-Q101 compliance per Vishay's ordering nomenclature.
What is the standoff voltage (VWM) and breakdown voltage range for the SMCJ64CHE3/9AT?
SMCJ64CHE3/9AT has a standoff voltage (VWM) of 64 V and a minimum/maximum breakdown voltage (VBR) of 71.1 V / 78.6 V at 1 mA test current. These values are specified in the Vishay datasheet Document Number 88394 and define the device's conduction threshold and design margin. The SMCJ64CHE3/9AT uses a unidirectional configuration, with polarity indicated by the cathode band on the DO-214AB package.
How does the SMCJ64CHE3/9AT compare to the SMAJ64A-E3/61T in terms of surge handling capability?
The SMCJ64CHE3/9AT provides 1500 W peak pulse power (PPPM), whereas the SMAJ64A-E3/61T is rated for only 400 W-3.75× less. This difference stems from larger die size and optimized thermal path in the DO-214AB package versus DO-214AC. For applications requiring IEC 61000-4-5 Level 4 immunity or ISO 7637-2 compliance, the SMCJ64CHE3/9AT is necessary; the SMAJ64A-E3/61T suits only lower-energy ESD or localized transients.
What packaging and reel options are available for the SMCJ64CHE3/9AT?
The SMCJ64CHE3/9AT is supplied in 13-inch diameter plastic tape and reel format with a base quantity of 3500 units per reel (package code 9AT). It features matte tin-plated leads, complies with RoHS Directive 2011/65/EU, and meets JESD 201 class 2 whisker resistance. The SMCJ64CHE3/9AT is distinct from commercial-grade variants (e.g., SMCJ64A-E3/9AT) due to its HE3 suffix denoting AEC-Q101 qualification.
SMCJ64CHE3/9AT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AB, SMC
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 64V
- Voltage - Breakdown (Min):
- 71.1V
- Voltage - Clamping (Max) @ Ipp:
- 114V
- Current - Peak Pulse (10/1000µs):
- 13.2A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AB (SMCJ)
SMCJ64CHE3/9AT FAQ
1.How can I place an order for SMCJ64CHE3/9AT through Aetrix?
Please submit a Request for Quotation (RFQ) for SMCJ64CHE3/9AT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMCJ64CHE3/9AT reliable?
The price and inventory of SMCJ64CHE3/9AT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMCJ64CHE3/9AT is usually 5 days.
3.What payment methods are accepted for SMCJ64CHE3/9AT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMCJ64CHE3/9AT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMCJ64CHE3/9AT?
SMCJ64CHE3/9AT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMCJ64CHE3/9AT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMCJ64CHE3/9AT?
For technical support, including SMCJ64CHE3/9AT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMCJ64CHE3/9AT requirements.
6.How does Aetrix verify that SMCJ64CHE3/9AT is sourced from the original manufacturer or authorized distributors?
All SMCJ64CHE3/9AT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMCJ64CHE3/9AT meets industry standards.
7.What is the process for return or replacement of SMCJ64CHE3/9AT?
All SMCJ64CHE3/9AT units undergo pre-shipment inspection (PSI). If there is an issue with SMCJ64CHE3/9AT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMCJ64CHE3/9AT part is unused and in its original packaging.
Return procedure for SMCJ64CHE3/9AT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMCJ64CHE3/9AT Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

