Vishay General Semiconductor - Diodes Division SMCJ64-E3/9AT
- Part No.:
- SMCJ64-E3/9AT
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AB, SMC
- Datasheet:
-
SMCJ64-E3/9AT.pdf
- Description:
- TVS DIODE 64VWM 114VC DO214AB
- Quantity:
- Payment:

- Shipping:

Inventory:4,933
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SMCJ64-E3/9AT from Vishay General Semiconductor is a unidirectional transient voltage suppressor (TVS) diode in DO-214AB (SMCJ) package, designed for robust overvoltage protection of sensitive electronics. It features a 64 V stand-off voltage (VWM), 71.1–78.6 V breakdown voltage (VBR) at 1 mA, 103 V maximum clamping voltage (VC) at 14.6 A peak pulse current (IPPM), and 1500 W peak pulse power (PPPM) with 10/1000 µs waveform.
For engineers reviewing the SMCJ64-E3/9AT datasheet, SMCJ64-E3/9AT pinout, SMCJ64-E3/9AT application, or SMCJ64-E3/9AT equivalent, this device is selected for high-energy surge suppression in automotive power lines, industrial I/O interfaces, and DC power rail protection where fast response (<1 ns), low clamping ratio, and AEC-Q101 qualification are required.
Technical Context
The SMCJ64-E3/9AT operates as a silicon avalanche diode, leveraging a glass-passivated junction to achieve stable reverse breakdown and low incremental surge resistance. Its unidirectional polarity enables integration into DC-biased circuits without AC coupling concerns, and it meets MSL Level 1 per J-STD-020 with 260 °C lead-free reflow compatibility.
Designed for transient immunity per ISO 7637-2 and IEC 61000-4-5 standards, the device delivers consistent clamping performance across -55 °C to +150 °C junction temperature range and supports surge currents up to 200 A (8.3 ms half-sine) under uni-directional forward surge conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 64 V - Maximum continuous reverse operating voltage before clamping initiates |
| VBR min/max | 71.1 V / 78.6 V at 1 mA - Confirmed avalanche onset range ensuring reliable turn-on margin |
| VC @ IPPM | 103 V at 14.6 A - Clamped voltage during 10/1000 µs surge, defining worst-case stress on protected circuit |
| PPPM | 1500 W - Peak transient energy handling capacity under standardized surge waveform |
| IR @ VWM | 1.0 µA - Low leakage ensures minimal standby power loss and signal integrity in high-impedance nodes |
| TJ max | +150 °C - Enables operation in under-hood automotive and industrial environments without derating |
| RθJA | 75 °C/W - Thermal resistance informs heatsinking requirements when mounted on 8 mm × 8 mm copper pads |
Pinout & Package
Package: DO-214AB (SMCJ), surface-mount, low-profile case with matte tin-plated leads solderable per J-STD-002 and JESD 22-B102. Polarity indicated by cathode band; unidirectional configuration only.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward conduction terminal | Connected to ground or lower-potential node in DC-biased protection schemes |
| Cathode | Reverse-biased clamping terminal | Connected to protected line; conducts avalanche current during overvoltage events |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive-grade reliability including temperature cycling, humidity bias, and mechanical shock |
| Glass-passivated junction | Ensures stable VBR over lifetime and resistance to moisture-induced degradation |
| MSL Level 1 rating | Enables standard SMT assembly without dry-pack or baking requirements |
| Low incremental surge resistance | Minimizes VC rise under high di/dt transients, improving clamping precision |
| RoHS-compliant (E3 suffix) | Meets EU Directive 2011/65/EU with no lead, mercury, cadmium, hexavalent chromium, PBB, or PBDE |
Applications
| Automotive Power Line Protection | Industrial Sensor Interface Protection |
|---|---|
Use Scenario: Protecting 12 V battery-fed ECUs against load dump (ISO 7637-2 Pulse 5a) and alternator transients. IC Role / Device Role / Timing Role: Primary clamping element placed between power rail and ground, absorbing >1500 W surges within nanoseconds. Use Value: Limits rail voltage to ≤103 V during 35 V/100 ms load dump, preventing damage to downstream regulators and microcontrollers. | Use Scenario: Safeguarding analog sensor outputs (e.g., pressure, temperature) connected to PLC I/O modules. IC Role / Device Role / Timing Role: Bidirectional-capable TVS not applicable; SMCJ64-E3/9AT used in unidirectional DC-coupled configurations on powered sensor lines. Use Value: Clamps ESD (IEC 61000-4-2 ±8 kV contact) and inductive switching spikes to <103 V, preserving ADC input accuracy and preventing latch-up. |
| DC Power Supply Input Protection | Telecom Equipment Surge Suppression |
Use Scenario: Front-end protection of 48 V telecom rectifiers and PoE injectors against lightning-induced surges. IC Role / Device Role / Timing Role: First-stage shunt protector on primary DC input, coordinated with upstream GDTs or MOVs. Use Value: Withstands repeated 1500 W pulses while maintaining VWM = 64 V, enabling clean 48 V nominal operation with 20 % headroom. | Use Scenario: Protecting Ethernet PHY power rails (e.g., 3.3 V, 5 V) in base station backhaul units exposed to induced surges. IC Role / Device Role / Timing Role: Localized rail clamp adjacent to power entry points, sized for fast-rising transients per IEC 61000-4-5 Level 4. Use Value: Achieves sub-100 ns response and 103 V clamping, keeping supply rails within safe operating area of 3.3 V/5 V LDOs and PMICs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ64A-E3/61T | Lower PPPM (400 W), smaller DO-214AC (SMA) package, same VWM/VBR range | Suitable for space-constrained consumer electronics but insufficient for automotive load dump | Select SMCJ64-E3/9AT when 1500 W surge handling and AEC-Q101 compliance are mandatory |
| SMCJ64AHE3/9AT | Identical electrical specs, but AEC-Q101 qualified (HE3 suffix) vs. commercial-grade E3 | Required for automotive OEM designs; E3 version acceptable for industrial non-automotive use | Choose SMCJ64-E3/9AT for cost-sensitive industrial applications where AEC-Q101 is not mandated |
Compared with SMAJ64A-E3/61T and SMCJ64AHE3/9AT, the SMCJ64-E3/9AT offers optimal balance of high-power surge capability (1500 W), commercial-grade qualification, and DO-214AB thermal performance-making it ideal for industrial power supplies and non-OEM automotive subsystems requiring proven robustness without premium AEC-Q101 cost.
Availability
SMCJ64-E3/9AT is available at Aetrix Electronics and suitable for automotive power line protection, industrial sensor interface protection, and DC power supply input protection requiring stable component supply and full traceability.
Supply support for SMCJ64-E3/9AT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability and application-specific optimization.
The SMCJ series is part of Vishay's TRANSZORB® TVS platform, engineered for high-energy transient suppression in harsh environments-including automotive, industrial, and telecom infrastructure-where precise clamping, fast response, and long-term stability are critical.
FAQ
What is the clamping voltage of the SMCJ64-E3/9AT under a 10/1000 µs surge?
The SMCJ64-E3/9AT has a maximum clamping voltage (VC) of 103 V when subjected to its rated peak pulse current (IPPM) of 14.6 A using the standardized 10/1000 µs waveform. This value is measured per ANSI/IEEE C62.35 and defines the upper voltage limit imposed on the protected circuit during surge events. The SMCJ64-E3/9AT maintains this clamping performance across its specified operating temperature range.
Is the SMCJ64-E3/9AT suitable for automotive applications?
The SMCJ64-E3/9AT is RoHS-compliant and manufactured in an AEC-Q101-qualified process flow (though the E3 suffix denotes commercial grade). It meets MSL Level 1 and operates from –55 °C to +150 °C, supporting under-hood and chassis-mounted use. For full automotive OEM qualification, the HE3-suffix variant (SMCJ64AHE3/9AT) is recommended-but the SMCJ64-E3/9AT remains widely deployed in Tier 2 automotive subsystems and industrial vehicles where AEC-Q101 is not contractually required.
How does the SMCJ64-E3/9AT differ from bi-directional SMCJ64CA variants?
The SMCJ64-E3/9AT is unidirectional, meaning it conducts only in reverse breakdown and must be installed with correct polarity-cathode toward the protected line. In contrast, SMCJ64CA devices are bi-directional, functioning identically in both polarities and lacking polarity marking. The SMCJ64-E3/9AT offers identical VWM (64 V), VBR (71.1–78.6 V), and VC (103 V) ratings but is intended for DC-biased circuits where forward conduction is undesirable or managed separately.
What is the thermal resistance of the SMCJ64-E3/9AT, and how does it affect layout?
The SMCJ64-E3/9AT has a typical junction-to-ambient thermal resistance (RθJA) of 75 °C/W when mounted on 0.31″ × 0.31″ (8.0 mm × 8.0 mm) copper pads per terminal. This value assumes minimum recommended pad layout per Vishay's datasheet. To maintain TJ ≤ 150 °C under sustained 6.5 W power dissipation, designers must ensure adequate copper area and avoid excessive ambient temperature buildup-especially in enclosed enclosures or stacked PCBs. The SMCJ64-E3/9AT's RθJL of 15 °C/W further supports efficient heat transfer to PCB traces.
Can the SMCJ64-E3/9AT be used in parallel for higher surge current handling?
Parallel connection of SMCJ64-E3/9AT devices is not recommended due to parameter tolerances-particularly VBR variation (±10 %) and dynamic impedance differences-which cause uneven current sharing during fast transients. Uneven distribution may result in premature failure of one unit while others remain underutilized. For higher surge capability, select a single higher-rated device (e.g., SMCJ70A or SMCJ75A) or implement staged protection with upstream coarse clamping (e.g., GDT) followed by SMCJ64-E3/9AT fine clamping.
SMCJ64-E3/9AT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AB, SMC
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 64V
- Voltage - Breakdown (Min):
- 71.1V
- Voltage - Clamping (Max) @ Ipp:
- 114V
- Current - Peak Pulse (10/1000µs):
- 13.2A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AB (SMCJ)
SMCJ64-E3/9AT FAQ
1.How can I place an order for SMCJ64-E3/9AT through Aetrix?
Please submit a Request for Quotation (RFQ) for SMCJ64-E3/9AT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMCJ64-E3/9AT reliable?
The price and inventory of SMCJ64-E3/9AT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMCJ64-E3/9AT is usually 5 days.
3.What payment methods are accepted for SMCJ64-E3/9AT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMCJ64-E3/9AT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMCJ64-E3/9AT?
SMCJ64-E3/9AT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMCJ64-E3/9AT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMCJ64-E3/9AT?
For technical support, including SMCJ64-E3/9AT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMCJ64-E3/9AT requirements.
6.How does Aetrix verify that SMCJ64-E3/9AT is sourced from the original manufacturer or authorized distributors?
All SMCJ64-E3/9AT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMCJ64-E3/9AT meets industry standards.
7.What is the process for return or replacement of SMCJ64-E3/9AT?
All SMCJ64-E3/9AT units undergo pre-shipment inspection (PSI). If there is an issue with SMCJ64-E3/9AT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMCJ64-E3/9AT part is unused and in its original packaging.
Return procedure for SMCJ64-E3/9AT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMCJ64-E3/9AT Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

