Vishay General Semiconductor - Diodes Division SMCJ6.5A-E3/57T
- Part No.:
- SMCJ6.5A-E3/57T
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AB, SMC
- Datasheet:
-
SMCJ6.5A-E3/57T.pdf
- Description:
- TVS DIODE 6.5VWM 11.2VC DO214AB
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
SMCJ6.5A-E3/57T from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in SMC (DO-214AB) package, designed to protect sensitive electronics against voltage transients induced by inductive load switching and lightning surges. It features a 6.5 V stand-off voltage (VWM), 7.22–7.98 V breakdown voltage (VBR) at 10 mA, 1500 W peak pulse power (10/1000 µs), 133.9 A peak pulse current (IPPM), and clamps to ≤11.2 V at rated surge current - used for safeguarding MOSFETs, ICs, and sensor signal lines in automotive and industrial systems.
For engineers reviewing the SMCJ6.5A-E3/57T datasheet, SMCJ6.5A-E3/57T pinout, SMCJ6.5A-E3/57T application, or SMCJ6.5A-E3/57T equivalent, key selection criteria include unidirectional polarity, 11.2 V clamping performance at 133.9 A, 75 °C/W junction-to-ambient thermal resistance, RoHS-compliant matte tin plating, and AEC-Q101 qualification availability via HE3 suffix variants.
Technical Context
The SMCJ6.5A-E3/57T operates as a unidirectional avalanche diode with glass-passivated junction, delivering fast response time (<1 ns) and low incremental surge resistance to limit transient overvoltage before damage occurs. Its 6.5 V stand-off rating ensures compatibility with 5 V logic and power rails while maintaining margin above normal operating voltage.
Designed for surface-mount automated placement on PCBs with 8.0 mm × 8.0 mm copper pads per terminal, it meets J-STD-020 MSL Level 1 (260 °C reflow peak) and JESD201 Class 2 whisker resistance. Polarity is marked by cathode band; no marking on bidirectional versions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 6.5 V - Maximum continuous reverse working voltage; must exceed system's max operating voltage to avoid leakage during normal operation. |
| VBR @ IT = 10 mA | 7.22–7.98 V - Breakdown voltage range where device transitions from high-impedance to low-impedance clamping mode. |
| VC @ IPPM | ≤11.2 V - Clamping voltage under 133.9 A 10/1000 µs surge; defines maximum voltage seen by protected circuit during transient. |
| PPPM | 1500 W - Peak pulse power handling capability; determines survivability of standardized lightning/surge waveforms. |
| RθJA | 75 °C/W - Junction-to-ambient thermal resistance; dictates temperature rise under sustained power dissipation without heatsink. |
| IFSM | 200 A - Non-repetitive forward surge current rating (8.3 ms half-sine); relevant for fault-current limiting in power stages. |
| TJ max. | +150 °C - Maximum junction temperature; sets upper thermal limit for reliability in high-ambient environments. |
Pinout & Package
Package: SMC (DO-214AB), surface-mount, low-profile case with matte tin-plated leads solderable per J-STD-002 and JESD22-B102. Cathode indicated by band on body.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry (unidirectional) | Connected to ground or low-side reference; conducts during positive transients when cathode is at higher potential. |
| Cathode | Reverse-biased terminal (marked with band) | Connected to protected line (e.g., 5 V rail); avalanche conduction initiates when voltage exceeds VBR. |
Key Features
| Feature | Design Value |
|---|---|
| Low-profile SMC package | Enables high-density PCB layouts and compatibility with automated pick-and-place equipment. |
| Glass-passivated junction | Ensures stable breakdown characteristics, long-term reliability, and resistance to environmental degradation. |
| 1500 W peak pulse power (10/1000 µs) | Provides robust protection against IEC 61000-4-5 Level 4 surges (4 kV line-earth, 2 kV line-line). |
| AEC-Q101 qualified option (HE3 suffix) | Validated for automotive applications including engine control units, ADAS sensors, and infotainment power rails. |
| MSL Level 1 moisture sensitivity | Allows unlimited floor life and standard reflow without baking, reducing manufacturing overhead. |
Applications
| Automotive Power Rail Protection | Industrial Sensor Interface Protection |
|---|---|
Use Scenario: Protecting 5 V supply lines feeding microcontrollers and CAN transceivers in vehicle body control modules. IC Role / Device Role / Timing Role: Unidirectional TVS clamps negative-going transients (load dump, alternator ripple) and positive surges (inductive kickback) on VCC net. Use Value: Limits voltage to ≤11.2 V during 133.9 A surge, preventing latch-up or gate oxide damage in downstream ICs. | Use Scenario: Shielding analog output lines (e.g., 4–20 mA current loop) of pressure/temperature sensors in factory automation PLCs. IC Role / Device Role / Timing Role: Placed across signal and return path to absorb ESD and fast transients from nearby motor drives or relay switching. Use Value: Sub-1 ns response ensures clamping before transient energy couples into precision amplifier inputs. |
| Consumer Device USB Port Protection | Telecom DC Power Input Protection |
Use Scenario: Safeguarding USB 2.0 data lines and VBUS in set-top boxes and smart displays exposed to user-handling ESD. IC Role / Device Role / Timing Role: Bidirectional variant not applicable; this unidirectional part used on VBUS only, with cathode to +5 V, anode to GND. Use Value: 6.5 V VWM allows full 5 V operation while clamping 8 kV contact ESD to <11.2 V - within USB spec tolerance. | Use Scenario: Front-end protection of -48 V telecom rectifier outputs feeding base station backplanes. IC Role / Device Role / Timing Role: Configured anode-to-rail, cathode-to-GND to clamp positive surges; paired with reverse-polarity diode for full protection. Use Value: 1500 W rating handles 10/1000 µs surges up to 400 V, meeting GR-1089-CORE Level 3 requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ6.5A-E3/61T | Lower PPPM (400 W), smaller SMA (DO-214AC) package, same VWM/VBR range | Not suitable for 1500 W surge events; limited to lower-energy IEC 61000-4-2 ESD or small inductive spikes | Select when board space is constrained and surge threat level is below 400 W. |
| SMCJ6.5CA-E3/57T | Bidirectional version; symmetric VBR (±7.22–7.98 V); same package and PPPM | Required for AC-coupled or floating signal lines where polarity reversal may occur (e.g., RS-485, audio) | Choose when protecting differential or bipolar signals without defined ground reference. |
Compared with SMAJ6.5A-E3/61T and SMCJ6.5CA-E3/57T, the SMCJ6.5A-E3/57T delivers higher surge immunity in the same footprint as its bidirectional counterpart, while offering superior power handling over the SMAJ series - making it optimal for high-reliability 5 V rail protection where unidirectional clamping suffices.
Availability
SMCJ6.5A-E3/57T is available at Aetrix Electronics and suitable for automotive ECUs, industrial sensor interfaces, consumer USB power delivery, and telecom DC input protection requiring stable component supply and traceable RoHS-compliant sourcing.
Supply support for SMCJ6.5A-E3/57T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, efficiency, and application-specific optimization.
The SMCJ series was developed to deliver high-power transient suppression in compact surface-mount packages for automotive, industrial, and communications infrastructure - balancing clamping performance, thermal robustness, and manufacturability.
FAQ
What is the clamping voltage of the SMCJ6.5A-E3/57T under maximum rated surge current?
The SMCJ6.5A-E3/57T clamps to a maximum of 11.2 V when subjected to its rated 133.9 A peak pulse current (IPPM) with a 10/1000 µs waveform. This value is measured per JEDEC standards and guarantees the protected circuit sees no more than 11.2 V during such a transient event. The SMCJ6.5A-E3/57T achieves this with low dynamic impedance, ensuring effective voltage limiting without excessive power dissipation in downstream components.
Is the SMCJ6.5A-E3/57T suitable for automotive applications?
Yes - while the base SMCJ6.5A-E3/57T is commercial-grade, Vishay offers AEC-Q101 qualified versions under the HE3 suffix (e.g., SMCJ6.5AHE3_A). These undergo rigorous stress testing for temperature cycling, humidity, and mechanical shock, validating suitability for under-hood and chassis-mounted automotive electronics. The SMCJ6.5A-E3/57T itself shares identical electrical and thermal specs, enabling drop-in qualification upgrades.
How does the SMCJ6.5A-E3/57T differ from the SMCJ6.5CA-E3/57T?
The SMCJ6.5A-E3/57T is unidirectional, with cathode marked and intended for DC rail protection where polarity is fixed. The SMCJ6.5CA-E3/57T is bidirectional, lacking polarity marking and providing symmetrical clamping for AC or floating signals. Both share identical package, power rating (1500 W), and breakdown range (7.22–7.98 V), but the SMCJ6.5A-E3/57T cannot replace the CA version in bidirectional applications without redesign.
What is the thermal resistance of the SMCJ6.5A-E3/57T, and how does it affect layout?
The SMCJ6.5A-E3/57T has a typical junction-to-ambient thermal resistance (RθJA) of 75 °C/W when mounted on 8.0 mm × 8.0 mm copper pads per terminal. To maintain safe junction temperatures under repeated surges, PCB layout must provide adequate copper area and minimize trace length between the SMCJ6.5A-E3/57T and ground plane. Reducing pad size increases RθJA, risking thermal runaway during high-duty-cycle transients.
Can the SMCJ6.5A-E3/57T be used in place of a 5 V Zener diode for overvoltage protection?
No - the SMCJ6.5A-E3/57T is not a regulation device. It remains high-impedance below VBR (~7.22 V), unlike a Zener which begins conducting gradually near its nominal voltage. The SMCJ6.5A-E3/57T only clamps hard during transients exceeding VBR; for steady-state overvoltage regulation, a dedicated 5 V LDO or supervisor IC is required. Its role is exclusively transient suppression, not voltage control.
SMCJ6.5A-E3/57T Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AB, SMC
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 6.5V
- Voltage - Breakdown (Min):
- 7.22V
- Voltage - Clamping (Max) @ Ipp:
- 11.2V
- Current - Peak Pulse (10/1000µs):
- 133.9A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AB (SMCJ)
SMCJ6.5A-E3/57T FAQ
1.How can I place an order for SMCJ6.5A-E3/57T through Aetrix?
Please submit a Request for Quotation (RFQ) for SMCJ6.5A-E3/57T on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMCJ6.5A-E3/57T reliable?
The price and inventory of SMCJ6.5A-E3/57T are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMCJ6.5A-E3/57T is usually 5 days.
3.What payment methods are accepted for SMCJ6.5A-E3/57T?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMCJ6.5A-E3/57T transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMCJ6.5A-E3/57T?
SMCJ6.5A-E3/57T orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMCJ6.5A-E3/57T order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMCJ6.5A-E3/57T?
For technical support, including SMCJ6.5A-E3/57T datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMCJ6.5A-E3/57T requirements.
6.How does Aetrix verify that SMCJ6.5A-E3/57T is sourced from the original manufacturer or authorized distributors?
All SMCJ6.5A-E3/57T products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMCJ6.5A-E3/57T meets industry standards.
7.What is the process for return or replacement of SMCJ6.5A-E3/57T?
All SMCJ6.5A-E3/57T units undergo pre-shipment inspection (PSI). If there is an issue with SMCJ6.5A-E3/57T, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMCJ6.5A-E3/57T part is unused and in its original packaging.
Return procedure for SMCJ6.5A-E3/57T:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMCJ6.5A-E3/57T Tags

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Nexperia USA Inc.

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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