My Inquiry
My Account
Vishay General Semiconductor - Diodes Division SMCJ6.5CHE3/9AT
- Part No.:
- SMCJ6.5CHE3/9AT
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AB, SMC
- Datasheet:
-
SMCJ6.5CHE3/9AT.pdf
- Description:
- TVS DIODE 6.5VWM 12.3VC DO214AB
- Quantity:
- Payment:
- Shipping:
Inventory:7,926
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SMCJ6.5CHE3/9AT from Vishay General Semiconductor is a unidirectional transient voltage suppressor (TVS) diode in DO-214AB (SMCJ) package, designed for robust overvoltage protection of sensitive electronics. It features a 6.5 V stand-off voltage (VWM), 7.22–7.98 V breakdown voltage (VBR) at 10 mA, 11.2 V clamping voltage (VC) at 133.9 A peak pulse current (IPPM), and 1500 W peak pulse power (PPPM) with 10/1000 µs waveform - deployed on power rails and signal lines in automotive ECUs and industrial sensor interfaces.
For engineers reviewing the SMCJ6.5CHE3/9AT datasheet, SMCJ6.5CHE3/9AT pinout, SMCJ6.5CHE3/9AT application, or SMCJ6.5CHE3/9AT equivalent, key selection criteria include its AEC-Q101 qualification, 150 °C max junction temperature, low incremental surge resistance, bi-directional-capable variant compatibility (e.g., SMCJ6.5CA), and RoHS-compliant matte tin-plated leads meeting J-STD-002 solderability.
Technical Context
This TVS diode operates as a clamping device that remains non-conductive below VWM (6.5 V) and rapidly transitions to low-impedance conduction above VBR to limit transient voltages. Its glass-passivated junction ensures stable leakage performance (<500 µA at VWM) and repeatable breakdown behavior under repetitive surge stress.
The device is rated for 1500 W peak pulse power per 10/1000 µs waveform, derated linearly above 25 °C ambient using a thermal resistance of 75 °C/W (junction-to-ambient) and 15 °C/W (junction-to-lead). It supports uni-directional surge suppression only and is not rated for continuous forward conduction beyond specified IFSM (200 A, 8.3 ms half-sine).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 6.5 V - maximum reverse working voltage before clamping begins; defines safe operating margin for 5 V or 6 V supply rails. |
| VBR min/max | 7.22 V / 7.98 V at 10 mA - guaranteed breakdown range ensures consistent turn-on across production lots. |
| VC @ IPPM | 11.2 V at 133.9 A - clamping voltage during worst-case surge; limits downstream IC stress to safe levels. |
| PPPM | 1500 W - peak transient energy absorption capability with standard 10/1000 µs waveform. |
| TJ max | +150 °C - enables operation in under-hood automotive environments and high-power industrial enclosures. |
| Package | DO-214AB (SMCJ) - surface-mount package with 8.0 mm × 8.0 mm copper pad requirement for thermal and surge current handling. |
| AEC-Q101 | Qualified - validated for automotive-grade reliability including temperature cycling, HTRB, and surge endurance. |
Pinout & Package
DO-214AB (SMCJ) package: molded plastic case with J-bend leads, polarity indicated by cathode band on one end. Terminals are matte tin-plated, solderable per J-STD-002 and JESD 22-B102. Meets UL 94 V-0 flammability rating.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry (uni-directional) | Connected to protected line side; conducts during positive transients when cathode is at higher potential. |
| Cathode | Forward current exit / clamping reference | Marked with band; tied to ground or lower-potential rail; defines clamping threshold relative to this node. |
Key Features
| Feature | Design Value |
|---|---|
| Glass passivated junction | Ensures stable VBR tolerance and low leakage (<500 µA) across temperature and lifetime. |
| Low incremental surge resistance | Minimizes VC rise under high IPPM, improving clamping precision for fast-rising transients. |
| MSL Level 1 (260 °C peak) | Enables standard SMT reflow without moisture-related popcorning or delamination. |
| AEC-Q101 qualification | Validates suitability for automotive applications including engine control, ADAS sensors, and body electronics. |
| RoHS-compliant HE3 suffix | Indicates AEC-Q101 qualified grade with JESD 201 Class 2 whisker resistance for long-term reliability. |
Applications
| Automotive Power Rail Protection | Industrial Sensor Interface Protection |
|---|---|
Use Scenario: Protecting 5 V–12 V power inputs in engine control units (ECUs) against load dump and inductive switching spikes. IC Role / Device Role / Timing Role: Clamping transient overvoltages to <11.2 V within nanoseconds, preventing latch-up or damage to MCU power domains. Use Value: Enables compliance with ISO 7637-2 Pulse 5a (load dump) and extends system uptime in harsh vehicle environments. | Use Scenario: Safeguarding analog output lines (e.g., 4–20 mA, 0–10 V) of pressure/temperature sensors in factory automation systems. IC Role / Device Role / Timing Role: Acting as a parallel shunt clamp on signal lines to divert ESD and switching noise away from precision ADC front-ends. Use Value: Maintains signal integrity under ±8 kV contact ESD (IEC 61000-4-2) while adding <1 pF parasitic capacitance. |
| Telecom DC Power Input Protection | Consumer Device USB Port Protection |
Use Scenario: Securing 12 V DC input stages of PoE-powered network switches and base station radios against lightning-induced surges. IC Role / Device Role / Timing Role: Primary-level TVS placed upstream of DC/DC converters to absorb multi-kW transients before they reach regulation circuitry. Use Value: Delivers 1500 W peak pulse handling with <1 ns response time, reducing need for secondary protection stages. | Use Scenario: Hardening USB VBUS lines in portable media players and smart home hubs against hot-plug transients and cable discharge events. IC Role / Device Role / Timing Role: Standoff-rated TVS placed between connector and USB controller IC to clamp overshoots above 6.5 V without interfering with 5 V nominal operation. Use Value: Prevents false disconnects and port lockups during repeated insertion cycles while meeting USB-IF ESD immunity requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ6.5AHE3/A | Lower PPPM (400 W), smaller SMA package (DO-214AC), same VWM/VBR range. | Suitable for space-constrained consumer PCBs but insufficient for automotive load dump. | Select SMCJ6.5CHE3/9AT when 1500 W surge handling and AEC-Q101 qualification are mandatory. |
| SMCJ6.5CAHE3/9AT | Bi-directional version; identical VWM (6.5 V), symmetric VBR (±7.22–7.98 V), same PPPM/package. | Required for AC-coupled or floating signal lines where polarity reversal occurs (e.g., RS-485, CAN bus). | Choose SMCJ6.5CHE3/9AT only for DC-coupled unidirectional protection; use SMCJ6.5CAHE3/9AT for bidirectional signal paths. |
Compared with SMAJ6.5AHE3/A, the SMCJ6.5CHE3/9AT delivers 3.75× higher surge power and automotive qualification; versus SMCJ6.5CAHE3/9AT, it provides polarity-specific clamping essential for grounded DC rails - making it optimal for ECU power input and industrial 24 V PLC modules.
Availability
SMCJ6.5CHE3/9AT is available at Aetrix Electronics and suitable for automotive power rail protection, industrial sensor interface hardening, and telecom DC input surge suppression requiring stable component supply across extended production lifecycles.
Supply support for SMCJ6.5CHE3/9AT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, efficiency, and application-specific validation.
The SMCJ series is part of Vishay's TRANSZORB® TVS platform, engineered for high-energy transient suppression in automotive, industrial, and telecom infrastructure where AEC-Q101 compliance and 1500 W pulse handling are critical design requirements.
FAQ
What is the clamping voltage of the SMCJ6.5CHE3/9AT under maximum surge conditions?
The SMCJ6.5CHE3/9AT has a maximum clamping voltage (VC) of 11.2 V at 133.9 A peak pulse current (IPPM), measured with a 10/1000 µs waveform. This value ensures downstream components see limited overvoltage during standardized surge events. The SMCJ6.5CHE3/9AT maintains this clamping performance across its full operating temperature range (-55 °C to +150 °C) when mounted per recommended 8.0 mm × 8.0 mm copper pads.
Is the SMCJ6.5CHE3/9AT suitable for automotive applications?
Yes, the SMCJ6.5CHE3/9AT is AEC-Q101 qualified and specifically designed for automotive use, including engine control units, body electronics, and ADAS sensor modules. Its DO-214AB package, 150 °C junction rating, and validated surge endurance meet stringent automotive reliability standards. The SMCJ6.5CHE3/9AT also complies with JESD 201 Class 2 whisker resistance and MSL Level 1 reflow requirements.
How does the SMCJ6.5CHE3/9AT differ from the bi-directional SMCJ6.5CAHE3/9AT?
The SMCJ6.5CHE3/9AT is unidirectional and protects only against positive transients relative to ground, while the SMCJ6.5CAHE3/9AT is bidirectional and suppresses surges of either polarity. Both share identical VWM (6.5 V), VBR (7.22–7.98 V), PPPM (1500 W), and DO-214AB packaging. The SMCJ6.5CHE3/9AT uses a cathode band marking; the SMCJ6.5CAHE3/9AT has no polarity marking.
What is the maximum reverse leakage current for the SMCJ6.5CHE3/9AT at rated VWM?
At its 6.5 V stand-off voltage (VWM) and 25 °C ambient temperature, the SMCJ6.5CHE3/9AT exhibits a maximum reverse leakage current (ID) of 500 µA. This low leakage preserves power efficiency in always-on circuits and avoids false triggering in high-impedance sensing nodes. The SMCJ6.5CHE3/9AT maintains leakage below 1 mA up to 125 °C per datasheet characterization.
Does the SMCJ6.5CHE3/9AT require heatsinking for standard operation?
No external heatsink is required for transient suppression duty, as the SMCJ6.5CHE3/9AT is rated for 6.5 W steady-state power dissipation on an infinite heatsink at 50 °C ambient. In practice, its low duty-cycle surge operation relies on thermal mass of PCB copper pads (minimum 8.0 mm × 8.0 mm per terminal) rather than continuous cooling. The SMCJ6.5CHE3/9AT achieves this with a junction-to-lead thermal resistance of 15 °C/W.
SMCJ6.5CHE3/9AT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AB, SMC
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 6.5V
- Voltage - Breakdown (Min):
- 7.22V
- Voltage - Clamping (Max) @ Ipp:
- 12.3V
- Current - Peak Pulse (10/1000µs):
- 122A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AB (SMCJ)
SMCJ6.5CHE3/9AT FAQ
1.How can I place an order for SMCJ6.5CHE3/9AT through Aetrix?
Please submit a Request for Quotation (RFQ) for SMCJ6.5CHE3/9AT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMCJ6.5CHE3/9AT reliable?
The price and inventory of SMCJ6.5CHE3/9AT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMCJ6.5CHE3/9AT is usually 5 days.
3.What payment methods are accepted for SMCJ6.5CHE3/9AT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMCJ6.5CHE3/9AT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMCJ6.5CHE3/9AT?
SMCJ6.5CHE3/9AT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMCJ6.5CHE3/9AT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMCJ6.5CHE3/9AT?
For technical support, including SMCJ6.5CHE3/9AT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMCJ6.5CHE3/9AT requirements.
6.How does Aetrix verify that SMCJ6.5CHE3/9AT is sourced from the original manufacturer or authorized distributors?
All SMCJ6.5CHE3/9AT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMCJ6.5CHE3/9AT meets industry standards.
7.What is the process for return or replacement of SMCJ6.5CHE3/9AT?
All SMCJ6.5CHE3/9AT units undergo pre-shipment inspection (PSI). If there is an issue with SMCJ6.5CHE3/9AT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMCJ6.5CHE3/9AT part is unused and in its original packaging.
Return procedure for SMCJ6.5CHE3/9AT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMCJ6.5CHE3/9AT Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
