Vishay General Semiconductor - Diodes Division SMCJ6.5HE3/9AT
- Part No.:
- SMCJ6.5HE3/9AT
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AB, SMC
- Datasheet:
-
SMCJ6.5HE3/9AT.pdf
- Description:
- TVS DIODE 6.5VWM 12.3VC DO214AB
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
SMCJ6.5HE3/9AT from Vishay General Semiconductor is a unidirectional transient voltage suppressor (TVS) diode in DO-214AB (SMCJ) package, designed for robust overvoltage protection of sensitive electronics. It features a 6.5 V stand-off voltage (VWM), 7.22–7.98 V breakdown voltage (VBR) at 10 mA, 11.2 V clamping voltage (VC) at 133.9 A peak pulse current (IPPM), and 1500 W peak pulse power (PPPM) with 10/1000 µs waveform - used to protect MOSFETs, ICs, and sensor signal lines in automotive and industrial power supplies.
For engineers reviewing the SMCJ6.5HE3/9AT datasheet, SMCJ6.5HE3/9AT pinout, SMCJ6.5HE3/9AT application, or SMCJ6.5HE3/9AT equivalent, key selection criteria include its AEC-Q101 qualification, 150 °C maximum junction temperature, low incremental surge resistance, and RoHS-compliant matte tin-plated leads meeting J-STD-002 solderability standards.
Technical Context
This TVS diode operates as a unidirectional clamping device, leveraging a glass-passivated silicon junction to deliver fast response time (<1 ps) and stable clamping under repetitive transients. Its design targets high-energy surge suppression per IEC 61000-4-5 (10/1000 µs) and meets UL 497B recognition for protector classification.
The SMCJ6.5HE3/9AT is rated for 6.5 W steady-state power dissipation at TA = 50 °C on an infinite heatsink, with thermal resistance junction-to-lead (RθJL) of 15 °C/W and junction-to-ambient (RθJA) of 75 °C/W when mounted on 8.0 mm × 8.0 mm copper pads - enabling reliable thermal performance in compact PCB layouts without forced cooling.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 6.5 V - maximum reverse working voltage before clamping begins; ensures no conduction during normal operation |
| VBR min/max | 7.22 V / 7.98 V at IT = 10 mA - tight breakdown tolerance enables precise overvoltage threshold setting |
| VC @ IPPM | 11.2 V at 133.9 A - clamping voltage limits downstream component stress during 10/1000 µs surges |
| PPPM | 1500 W - peak pulse power handling capability defines maximum transient energy absorption |
| TJ max | +150 °C - extended junction temperature rating supports operation in under-hood automotive environments |
| Package | DO-214AB (SMCJ) - surface-mount package with 8.13 mm × 6.22 mm footprint and J-bend leads for automated placement |
| AEC-Q101 | Qualified - validated for automotive-grade reliability including temperature cycling, HTRB, and ESD testing |
Pinout & Package
DO-214AB (SMCJ) package: molded plastic case with J-bend leads, polarity indicated by cathode band on one end. Leads are matte tin-plated, solderable per J-STD-002 and JESD 22-B102, and meet JESD 201 class 2 whisker test (HE3 suffix).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Current entry terminal in forward bias | Connected to lower-potential side of protected circuit; not used during reverse-transient clamping |
| Cathode (banded end) | Current exit terminal in forward bias; clamping node in reverse bias | Connected to higher-potential rail (e.g., VBUS); conducts surge current to ground during overvoltage events |
Key Features
| Feature | Design Value |
|---|---|
| Glass-passivated junction | Ensures stable VBR over lifetime and immunity to moisture-induced degradation in harsh environments |
| Low incremental surge resistance | Minimizes voltage overshoot during fast-rising transients (e.g., ISO 7637-2 pulse 1/2a), improving clamping fidelity |
| MSL Level 1 (J-STD-020) | Allows unlimited floor life and reflow up to 260 °C peak - compatible with standard lead-free assembly processes |
| UL 497B recognized (QVGQ2) | Validates suitability for telecom and industrial signal-line protection per safety-critical surge standards |
| RoHS-compliant HE3 suffix | Meets JESD 201 class 2 whisker resistance - critical for long-term reliability in vibration-prone automotive modules |
Applications
| Automotive Power Supply Protection | Industrial Sensor Signal Line Protection |
|---|---|
Use Scenario: Protecting 12 V battery-fed ECUs against load dump and alternator ripple transients per ISO 16750-2. IC Role / Device Role / Timing Role: Unidirectional TVS placed between VBAT and GND, clamping surges above 6.5 V before they reach LDOs or microcontrollers. Use Value: Withstands 1500 W pulses and maintains 11.2 V clamping, preventing latch-up or gate oxide damage in downstream 5 V/3.3 V logic. | Use Scenario: Shielding analog output lines (e.g., 4–20 mA current loop) from ESD and inductive switching noise in factory automation PLCs. IC Role / Device Role / Timing Role: TVS connected across signal and return path, absorbing ±8 kV contact ESD per IEC 61000-4-2 while preserving signal integrity. Use Value: Low leakage (<500 µA at 6.5 V) avoids loading precision current sources; fast response prevents transient coupling into ADC front-ends. |
| DC-DC Converter Input Stage | Automotive Lighting Module Protection |
Use Scenario: Safeguarding buck converter inputs against back-EMF from relay coils and motor drivers in body control modules. IC Role / Device Role / Timing Role: Placed upstream of input capacitors to clamp 10/1000 µs surges before they stress MOSFETs or controller ICs. Use Value: 133.9 A IPPM rating handles high-current spikes; 75 °C/W RθJA allows thermal stability on small copper areas without heatsinks. | Use Scenario: Protecting LED driver ICs in headlamp modules exposed to hot-swap and cable discharge events. IC Role / Device Role / Timing Role: Unidirectional TVS on supply rail to absorb 100 ns–1 µs transients induced by CAN bus coupling or PWM dimming noise. Use Value: AEC-Q101 qualification ensures operation at +125 °C ambient; 150 °C TJ max supports sustained duty cycles near engine compartments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ6.5A-E3/61T | Lower PPPM (400 W), smaller SMA package (DO-214AC), 12.7 V VC at 32.4 A IPPM | Targeted for space-constrained consumer electronics; insufficient for automotive load dump | Select only for low-energy transients where board area is critical and 1500 W rating is unnecessary |
| SMCJ6.5AHE3/9AT | Identical electrical specs and AEC-Q101 qualification; differs only in marking code (GDK vs. BDK) and packaging reel size | No functional difference; same DO-214AB footprint and thermal behavior | Drop-in replacement with identical performance - verify reel quantity (3500 pcs) and tape width compatibility |
Compared with SMAJ6.5A-E3/61T, the SMCJ6.5HE3/9AT delivers 3.75× higher surge power handling and superior thermal robustness; versus SMCJ6.5AHE3/9AT, it is electrically and mechanically identical - differing only in internal traceability coding per Vishay's manufacturing lot control.
Availability
SMCJ6.5HE3/9AT is available at Aetrix Electronics and suitable for automotive power supply protection, industrial sensor interface circuits, and DC-DC converter input stages requiring stable component supply across multi-year production programs.
Supply support for SMCJ6.5HE3/9AT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, efficiency, and automotive-grade qualification.
The SMCJ series belongs to Vishay's TRANSZORB® TVS platform, engineered specifically for high-energy transient suppression in demanding automotive, industrial, and telecom infrastructure applications where AEC-Q101 compliance and UL recognition are mandatory.
FAQ
What is the clamping voltage of the SMCJ6.5HE3/9AT at its rated peak pulse current?
The SMCJ6.5HE3/9AT has a maximum clamping voltage (VC) of 11.2 V at 133.9 A peak pulse current (IPPM), measured using the standardized 10/1000 µs double-exponential waveform. This value ensures downstream components like 5 V microcontrollers or 12 V gate drivers remain within safe operating voltage limits during surge events. The SMCJ6.5HE3/9AT achieves this with low incremental surge resistance, minimizing voltage overshoot beyond VC.
Is the SMCJ6.5HE3/9AT qualified for automotive applications?
Yes, the SMCJ6.5HE3/9AT is AEC-Q101 qualified, having passed stress tests including high-temperature reverse bias (HTRB), temperature cycling, and ESD per JESD22-A114. Its DO-214AB package, 150 °C maximum junction temperature, and UL 497B recognition confirm suitability for under-hood and body-control module applications. The HE3 suffix further certifies compliance with JESD 201 class 2 whisker resistance - a requirement for automotive vibration environments.
How does the SMCJ6.5HE3/9AT differ from the SMCJ6.5AHE3/9AT?
The SMCJ6.5HE3/9AT and SMCJ6.5AHE3/9AT share identical electrical specifications, thermal ratings, package dimensions, and AEC-Q101 qualification. The distinction lies solely in Vishay's internal marking code: SMCJ6.5HE3/9AT uses "BDK" marking, while SMCJ6.5AHE3/9AT uses "GDK", reflecting different wafer lots or traceability protocols. Both are functionally interchangeable in all designs using the SMCJ6.5HE3/9AT.
What is the maximum reverse leakage current of the SMCJ6.5HE3/9AT at its stand-off voltage?
At the 6.5 V stand-off voltage (VWM), the SMCJ6.5HE3/9AT exhibits a maximum reverse leakage current (ID) of 500 µA at TA = 25 °C. This low leakage preserves signal integrity in high-impedance sensor interfaces and avoids excessive quiescent power draw in always-on automotive modules. Leakage remains below 1 mA up to 85 °C, supporting reliable operation across full industrial temperature range.
Can the SMCJ6.5HE3/9AT be used in bi-directional protection circuits?
No, the SMCJ6.5HE3/9AT is a unidirectional TVS diode, indicated by the "A" suffix (not "CA"). It conducts only in reverse bias above VBR and must be oriented with the cathode band toward the protected line's higher potential. For bi-directional applications - such as AC signal lines or differential buses - a part with "CA" suffix (e.g., SMCJ6.5CA) is required. Using SMCJ6.5HE3/9AT in bi-directional configurations risks forward conduction and failure during negative transients.
SMCJ6.5HE3/9AT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AB, SMC
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 6.5V
- Voltage - Breakdown (Min):
- 7.22V
- Voltage - Clamping (Max) @ Ipp:
- 12.3V
- Current - Peak Pulse (10/1000µs):
- 122A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AB (SMCJ)
SMCJ6.5HE3/9AT FAQ
1.How can I place an order for SMCJ6.5HE3/9AT through Aetrix?
Please submit a Request for Quotation (RFQ) for SMCJ6.5HE3/9AT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMCJ6.5HE3/9AT reliable?
The price and inventory of SMCJ6.5HE3/9AT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMCJ6.5HE3/9AT is usually 5 days.
3.What payment methods are accepted for SMCJ6.5HE3/9AT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMCJ6.5HE3/9AT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMCJ6.5HE3/9AT?
SMCJ6.5HE3/9AT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMCJ6.5HE3/9AT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMCJ6.5HE3/9AT?
For technical support, including SMCJ6.5HE3/9AT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMCJ6.5HE3/9AT requirements.
6.How does Aetrix verify that SMCJ6.5HE3/9AT is sourced from the original manufacturer or authorized distributors?
All SMCJ6.5HE3/9AT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMCJ6.5HE3/9AT meets industry standards.
7.What is the process for return or replacement of SMCJ6.5HE3/9AT?
All SMCJ6.5HE3/9AT units undergo pre-shipment inspection (PSI). If there is an issue with SMCJ6.5HE3/9AT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMCJ6.5HE3/9AT part is unused and in its original packaging.
Return procedure for SMCJ6.5HE3/9AT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMCJ6.5HE3/9AT Tags

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Nexperia USA Inc.

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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