Vishay General Semiconductor - Diodes Division SMCJ7.0AHE3/57T
- Part No.:
- SMCJ7.0AHE3/57T
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AB, SMC
- Datasheet:
-
SMCJ7.0AHE3/57T.pdf
- Description:
- TVS DIODE 7VWM 12VC DO214AB
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
SMCJ7.0AHE3/57T from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in SMC (DO-214AB) package, designed for clamping voltage transients up to 1500 W peak pulse power with 12.0 V clamping voltage at 125 A peak pulse current and 7.0 V stand-off voltage. It protects MOSFETs, ICs, and sensor signal lines in automotive and industrial power electronics.
For engineers reviewing the SMCJ7.0AHE3/57T datasheet, SMCJ7.0AHE3/57T pinout, SMCJ7.0AHE3/57T application, or SMCJ7.0AHE3/57T equivalent, key selection criteria include unidirectional polarity, AEC-Q101 qualification, 1500 W PPPM rating, 7.0 V VWM, and SMC package compatibility with automated placement on PCBs requiring robust surge immunity.
Technical Context
The SMCJ7.0AHE3/57T operates as a silicon avalanche diode with glass-passivated junction, delivering fast response time (<1 ns) and low incremental surge resistance to clamp transient overvoltages induced by inductive load switching or ESD events. Its breakdown voltage range is 7.78 V to 8.60 V at 10 mA test current.
Designed for unidirectional operation, it features a cathode band marking, 150 °C maximum junction temperature, and thermal resistance of 75 °C/W (junction-to-ambient) on standard 8.0 mm × 8.0 mm copper pads. It meets J-STD-020 MSL level 1 and JESD201 Class 2 whisker resistance requirements.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 7.0 V - Maximum reverse stand-off voltage before significant leakage; defines safe operating margin below clamping threshold |
| VBR min/max | 7.78 V / 8.60 V at 10 mA - Confirmed avalanche breakdown range ensuring predictable turn-on during transients |
| VC @ IPPM | 12.0 V at 125 A - Clamping voltage under 10/1000 μs surge; limits downstream device stress during worst-case transients |
| PPPM | 1500 W - Peak pulse power handling per 10/1000 μs waveform; supports high-energy surge immunity per IEC 61000-4-5 |
| ID @ VWM | 200 μA - Reverse leakage at rated stand-off; low enough to avoid system power loss or false triggering |
| TJ max | +150 °C - Maximum junction temperature; enables operation in under-hood automotive and industrial environments |
| Package | SMC (DO-214AB) - Standardized surface-mount outline with 7.75 mm × 6.22 mm footprint and matte tin-plated leads |
Pinout & Package
SMCJ7.0AHE3/57T uses the SMC (DO-214AB) package: a rectangular surface-mount case with two terminals, cathode marked by a band on the body. Leads are matte tin-plated and solderable per J-STD-002 and JESD22-B102.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Low-side reference terminal | Connected to ground or low-voltage rail; completes conduction path during reverse-biased transient clamping |
| Cathode | High-side input terminal | Connected to protected line (e.g., 12 V supply or sensor output); carries surge current into diode during overvoltage event |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive-grade reliability including temperature cycling, humidity bias, and mechanical shock per AEC specification |
| Glass passivated junction | Ensures stable breakdown characteristics and long-term parameter stability under thermal and electrical stress |
| 1500 W peak pulse power | Supports protection against high-energy transients such as ISO 7637-2 Pulse 1/2a/5a in 12 V vehicle systems |
| MSL Level 1 | Allows unlimited floor life and reflow without baking; compatible with standard SMT assembly processes at 260 °C peak |
| Low clamping ratio (VC/VWM = 1.71) | Minimizes voltage overshoot during clamping-critical for safeguarding 5 V–12 V logic and analog interfaces |
Applications
| Automotive Power Distribution | Industrial Sensor Interface Protection |
|---|---|
Use Scenario: Protecting 12 V supply rails in engine control units (ECUs) and body control modules (BCMs) against load dump and inductive switching spikes. IC Role / Device Role / Timing Role: Unidirectional TVS placed between battery feed and LDO/regulator input to clamp transients before they reach sensitive power management ICs. Use Value: Limits clamped voltage to 12.0 V, preventing damage to downstream 13.5 V absolute maximum-rated regulators and microcontrollers. | Use Scenario: Safeguarding analog outputs of pressure or temperature sensors connected to PLC I/O modules exposed to field wiring surges. IC Role / Device Role / Timing Role: TVS mounted directly at connector entry point to shunt fast-rising transients (e.g., IEC 61000-4-4 EFT) before reaching op-amp signal conditioning stage. Use Value: 125 A peak pulse current capability absorbs 4 kV EFT bursts while maintaining <1 μA leakage at 7.0 V, preserving sensor accuracy. |
| DC Motor Drive Board Protection | Telecom Power Input Stage |
Use Scenario: Shielding H-bridge gate drivers and current sense amplifiers from back-EMF spikes generated during brushed DC motor commutation. IC Role / Device Role / Timing Role: Placed across motor supply rail (VCC) and ground, acting as crowbar element during inductive kickback events. Use Value: 1500 W PPPM rating handles repetitive 100 ms motor stall surges; 75 °C/W RθJA allows thermal survival without heatsink on 2 oz copper. | Use Scenario: Front-end protection for 48 V telecom power supplies subjected to lightning-induced surges on outdoor line feeds. IC Role / Device Role / Timing Role: First-stage TVS in series with MOV and filter in AC/DC front-end, absorbing initial fast transients before slower clamping elements engage. Use Value: Fast <1 ns response ensures clamping initiates before MOV turn-on delay; 12.0 V VC prevents overvoltage stress on primary-side controller ICs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ7.0AHE3/A | Lower PPPM (400 W), SMA package (smaller footprint, higher RθJA = 110 °C/W) | Suitable only for lower-energy transients (e.g., ESD-only); not recommended for load dump or IEC 61000-4-5 | Select when board space is constrained and surge energy is limited to <400 W |
| SMCJ7.0CAHE3/57T | Bidirectional variant; same VBR/VWM but symmetric clamping in both polarities | Required for AC-coupled or floating signal lines where polarity reversal occurs (e.g., RS-485, CAN bus) | Choose for bidirectional protection needs; not interchangeable without circuit redesign |
Compared with SMAJ7.0AHE3/A and SMCJ7.0CAHE3/57T, the SMCJ7.0AHE3/57T delivers 3.75× higher surge power handling than SMAJ7.0AHE3/A and provides unidirectional clamping optimized for DC power rails-making it the preferred choice for automotive and industrial 12 V supply protection where energy levels exceed 1 kW.
Availability
SMCJ7.0AHE3/57T is available at Aetrix Electronics and suitable for automotive ECUs, industrial PLCs, DC motor drives, and telecom power supplies requiring stable component supply with AEC-Q101 compliance and full traceability.
Supply support for SMCJ7.0AHE3/57T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, efficiency, and application-specific performance.
The SMCJ series is part of Vishay's TRANSZORB® TVS platform, engineered specifically for high-energy transient suppression in harsh environments including automotive, industrial, and telecom infrastructure.
FAQ
What is the clamping voltage of the SMCJ7.0AHE3/57T under maximum rated surge current?
The SMCJ7.0AHE3/57T has a maximum clamping voltage (VC) of 12.0 V when subjected to its rated peak pulse current (IPPM) of 125 A using the standardized 10/1000 μs waveform. This value is measured at TA = 25 °C on 8.0 mm × 8.0 mm copper pads and defines the upper voltage limit imposed on protected circuits during surge events. The SMCJ7.0AHE3/57T maintains this clamping performance across its specified operating temperature range.
Is the SMCJ7.0AHE3/57T qualified for automotive applications?
Yes, the SMCJ7.0AHE3/57T carries the HE3 suffix, indicating RoHS-compliance and full AEC-Q101 qualification per Vishay's documentation. It undergoes stress testing for temperature cycling, high-temperature operating life, and mechanical shock, making it suitable for under-hood and chassis-mounted automotive electronics. The SMCJ7.0AHE3/57T is explicitly listed in Vishay's AEC-Q101 qualified product matrix.
How does the SMCJ7.0AHE3/57T differ from the bidirectional SMCJ7.0CAHE3/57T?
The SMCJ7.0AHE3/57T is unidirectional with cathode-band polarity, intended for DC rail protection where transients occur only in reverse bias. In contrast, the SMCJ7.0CAHE3/57T is bidirectional, offering symmetrical clamping for AC or floating lines like data buses. Their VBR and VC values are identical, but the SMCJ7.0AHE3/57T cannot replace the CA version without circuit modification due to polarity constraints.
What is the thermal resistance of the SMCJ7.0AHE3/57T, and how does it affect layout design?
The SMCJ7.0AHE3/57T has a typical junction-to-ambient thermal resistance (RθJA) of 75 °C/W when mounted on minimum recommended 8.0 mm × 8.0 mm copper pads per terminal. This value assumes no additional heatsinking. To maintain TJ ≤ 150 °C under continuous 6.5 W dissipation, PCB layout must provide adequate copper area and airflow. For high-reliability automotive use, designers should verify thermal performance using actual board stack-up and ambient conditions.
Can the SMCJ7.0AHE3/57T be used in place of older SMCJ7.0A-E3/57T parts?
Yes, the SMCJ7.0AHE3/57T is a direct replacement for SMCJ7.0A-E3/57T with identical electrical specifications, package dimensions, and pinout. The HE3 suffix adds AEC-Q101 qualification and updated RoHS compliance, while retaining full compatibility with existing footprints and assembly processes. No PCB or schematic changes are required when upgrading from E3 to HE3 variants of the SMCJ7.0AHE3/57T.
SMCJ7.0AHE3/57T Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AB, SMC
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Discontinued at Digi-Key
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 7V
- Voltage - Breakdown (Min):
- 7.78V
- Voltage - Clamping (Max) @ Ipp:
- 12V
- Current - Peak Pulse (10/1000µs):
- 125A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AB (SMCJ)
SMCJ7.0AHE3/57T FAQ
1.How can I place an order for SMCJ7.0AHE3/57T through Aetrix?
Please submit a Request for Quotation (RFQ) for SMCJ7.0AHE3/57T on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMCJ7.0AHE3/57T reliable?
The price and inventory of SMCJ7.0AHE3/57T are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMCJ7.0AHE3/57T is usually 5 days.
3.What payment methods are accepted for SMCJ7.0AHE3/57T?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMCJ7.0AHE3/57T transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMCJ7.0AHE3/57T?
SMCJ7.0AHE3/57T orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMCJ7.0AHE3/57T order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMCJ7.0AHE3/57T?
For technical support, including SMCJ7.0AHE3/57T datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMCJ7.0AHE3/57T requirements.
6.How does Aetrix verify that SMCJ7.0AHE3/57T is sourced from the original manufacturer or authorized distributors?
All SMCJ7.0AHE3/57T products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMCJ7.0AHE3/57T meets industry standards.
7.What is the process for return or replacement of SMCJ7.0AHE3/57T?
All SMCJ7.0AHE3/57T units undergo pre-shipment inspection (PSI). If there is an issue with SMCJ7.0AHE3/57T, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMCJ7.0AHE3/57T part is unused and in its original packaging.
Return procedure for SMCJ7.0AHE3/57T:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMCJ7.0AHE3/57T Tags

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onsemi

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DESD3V3E1BL-7B
Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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ESD5Z5.0T1G
onsemi

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DESD5V0U1BB-7
Diodes Incorporated

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D12V0L1B2LP-7B
Diodes Incorporated

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Nexperia USA Inc.

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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