Vishay General Semiconductor - Diodes Division SMCJ75AHE3/9AT
- Part No.:
- SMCJ75AHE3/9AT
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AB, SMC
- Datasheet:
-
SMCJ75AHE3/9AT.pdf
- Description:
- TVS DIODE 75VWM 121VC DO214AB
- Quantity:
- Payment:

- Shipping:

Inventory:3,316
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SMCJ75AHE3/9AT from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in SMC (DO-214AB) package, designed for high-energy surge protection. It features a 75 V standoff voltage (VWM), 83.3–92.1 V breakdown voltage (VBR) at 1 mA, 12.4 A peak pulse current (IPPM) under 10/1000 µs waveform, and clamps transients to ≤121 V at rated surge. It is AEC-Q101 qualified and used to protect MOSFETs, ICs, and sensor signal lines in automotive power systems.
For engineers reviewing the SMCJ75AHE3/9AT datasheet, SMCJ75AHE3/9AT pinout, SMCJ75AHE3/9AT application, or SMCJ75AHE3/9AT equivalent, key selection criteria include unidirectional polarity, 1500 W peak pulse power rating, 1.0 µA max reverse leakage at VWM, -55 °C to +150 °C operating junction temperature, and RoHS-compliant AEC-Q101 qualification for automotive-grade reliability.
Technical Context
The SMCJ75AHE3/9AT operates as a clamping-type TVS diode with avalanche breakdown behavior. Its glass-passivated junction enables fast response time (<1 ns) and low incremental surge resistance, critical for suppressing ESD and lightning-induced transients on DC power rails and signal paths.
It is rated for 1500 W peak pulse power (10/1000 µs), derated linearly above 25 °C ambient per Fig. 2, and exhibits a positive temperature coefficient of VBR (+0.106 %/°C), ensuring stable clamping across temperature. Mounting on 8.0 mm × 8.0 mm copper pads is required to achieve full IPPM rating.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 75 V - Maximum continuous reverse working voltage before clamping begins; defines safe operating DC bias level. |
| VBR (min/max) | 83.3 V / 92.1 V at IT = 1 mA - Breakdown onset range; ensures reliable turn-on during overvoltage events. |
| VC @ IPPM | ≤121 V at 12.4 A - Clamped voltage under full 1500 W surge; determines protected circuit's maximum stress level. |
| PPPM | 1500 W - Peak pulse power handling capability with 10/1000 µs waveform; defines single-event surge robustness. |
| ID @ VWM | ≤1.0 µA - Reverse leakage current at rated standoff voltage; ensures minimal power loss in standby. |
| TJ max. | +150 °C - Maximum junction temperature; supports operation in under-hood automotive environments. |
| Package | SMC (DO-214AB) - Surface-mount outline with 7.75 mm × 6.22 mm footprint; compatible with automated placement and reflow. |
Pinout & Package
SMCJ75AHE3/9AT uses the standard SMC (DO-214AB) package: two-terminal, unidirectional device with cathode indicated by a band on the body. Leads are matte tin-plated and solderable per J-STD-002 and JESD 22-B102. Molding compound meets UL 94 V-0.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Low-side connection point | Connected to ground or low-potential node; completes clamping path during transient events. |
| Cathode | High-side connection point | Marked with band; connects to protected line (e.g., 75 V rail); conducts avalanche current when V > VBR. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive applications including engine control units and ADAS power supplies. |
| Glass passivated junction | Enables <1 ns response time and stable long-term reliability under repetitive surge stress. |
| 1500 W peak pulse rating | Withstands IEC 61000-4-5 Level 4 (4 kV) surges on 12 V/24 V systems without degradation. |
| MSL Level 1 (260 °C) | Compatible with standard lead-free reflow profiles; no moisture sensitivity handling required. |
| RoHS-compliant & halogen-free option available | Meets global environmental compliance requirements for automotive and industrial end equipment. |
Applications
| Automotive Power Rail Protection | Industrial Sensor Signal Line Protection |
|---|---|
|
Use Scenario: Protecting 75 V battery-fed ECUs against load dump and alternator transients. IC Role / Device Role / Timing Role: Unidirectional clamping TVS placed between power input and ground. Use Value: Limits transient voltage to ≤121 V, preventing damage to downstream 100 V-rated MOSFETs and regulators. |
Use Scenario: Safeguarding analog outputs of pressure/temperature sensors in factory automation PLCs. IC Role / Device Role / Timing Role: Low-leakage (≤1.0 µA) TVS on 24 V supply line feeding sensor front-end. Use Value: Maintains signal integrity during 1 kV EFT bursts while adding negligible offset error due to ultra-low ID. |
| DC-DC Converter Input Protection | Telecom Power Interface Protection |
|
Use Scenario: Input-stage surge suppression for isolated 75 V → 12 V flyback converters in railway signaling. IC Role / Device Role / Timing Role: Primary-side TVS absorbing coupled lightning surges on input bus. Use Value: Withstands 1500 W pulses without thermal runaway, enabling single-device protection per rail. |
Use Scenario: Overvoltage hardening of 48 V PoE-powered base station RF modules. IC Role / Device Role / Timing Role: Standoff-rated (75 V) TVS on DC input prior to DC-DC stage. Use Value: Clamps induced surges to 121 V, staying within absolute maximum ratings of downstream 150 V capacitors. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ75A-E3/61T | Lower PPPM (400 W), SMA package (smaller footprint, lower thermal mass). | Not suitable for IEC 61000-4-5 Level 4; limited to low-energy ESD or EFT. | Select only if space-constrained and surge energy is ≤400 W. |
| SMCJ75CAHE3/9AT | Bidirectional variant; same VWM (75 V), symmetric clamping in both polarities. | Required for AC-coupled or floating signal lines where polarity reversal occurs. | Choose bidirectional version only when protecting differential pairs or AC signals. |
Compared with SMCJ75AHE3/9AT, SMAJ75A-E3/61T offers smaller size but sacrifices 73 % peak surge capacity, while SMCJ75CAHE3/9AT provides polarity-agnostic protection at identical power rating-making the original unidirectional model optimal for fixed-polarity 75 V DC rails where cost and thermal performance are prioritized.
Availability
SMCJ75AHE3/9AT is available at Aetrix Electronics and suitable for automotive power systems, industrial sensor interfaces, DC-DC converter inputs, and telecom power interfaces requiring stable component supply with AEC-Q101 assurance and full 1500 W surge capability.
Supply support for SMCJ75AHE3/9AT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, and protection devices with emphasis on reliability, efficiency, and automotive qualification.
The SMCJ series was developed specifically for high-power transient suppression in harsh environments, targeting automotive, industrial, and telecom applications demanding AEC-Q101 compliance and 1500 W surge immunity.
FAQ
What is the clamping voltage of SMCJ75AHE3/9AT at its rated peak pulse current?
The SMCJ75AHE3/9AT clamps to a maximum of 121 V when subjected to its rated 12.4 A peak pulse current (IPPM) under the standard 10/1000 µs waveform. This value is measured at TJ = 25 °C with recommended 8.0 mm × 8.0 mm copper pad layout and defines the upper voltage limit imposed on protected circuitry during worst-case surge events. The SMCJ75AHE3/9AT maintains this clamping performance across its full operating temperature range.
Is SMCJ75AHE3/9AT suitable for automotive applications?
Yes, SMCJ75AHE3/9AT is AEC-Q101 qualified and explicitly designated for automotive use via the "HE3" suffix. It meets stringent reliability requirements for under-hood and chassis-mounted electronics, including thermal cycling, humidity resistance, and surge endurance. Its -55 °C to +150 °C operating junction temperature range and 1500 W surge rating make it appropriate for engine control units, ADAS power supplies, and body electronics where load dump and ISO 7637-2 compliance are mandatory. The SMCJ75AHE3/9AT carries full qualification documentation per Vishay's automotive product release process.
How does the SMCJ75AHE3/9AT differ from the bidirectional SMCJ75CAHE3/9AT?
The SMCJ75AHE3/9AT is unidirectional, with polarity marked by a cathode band and intended for DC circuits where voltage polarity is fixed. In contrast, SMCJ75CAHE3/9AT is bidirectional, offering symmetrical clamping in both directions and no polarity marking-required for AC-coupled lines or floating differential signals. Both share identical VWM (75 V), PPPM (1500 W), and package (SMC), but the SMCJ75AHE3/9AT delivers lower capacitance and leakage in DC applications. The SMCJ75AHE3/9AT is not interchangeable with the CA variant without circuit redesign.
What is the thermal resistance of SMCJ75AHE3/9AT, and how does it affect PCB layout?
The SMCJ75AHE3/9AT has a typical junction-to-ambient thermal resistance (RθJA) of 75 °C/W and junction-to-lead (RθJL) of 15 °C/W. To achieve rated 1500 W pulse power, the device must be mounted on minimum 8.0 mm × 8.0 mm copper pads per terminal, as specified in the datasheet. Smaller pads cause thermal derating-e.g., at 50 °C ambient, power dissipation drops to 6.5 W continuous. Proper copper area ensures transient energy is safely dissipated without exceeding the +150 °C maximum junction temperature. The SMCJ75AHE3/9AT thermal performance is validated only with this layout.
Does SMCJ75AHE3/9AT require special handling or moisture sensitivity precautions?
No-SMCJ75AHE3/9AT is rated MSL Level 1 per J-STD-020, meaning it has unlimited floor life and withstands peak reflow temperatures up to 260 °C without baking or dry-pack requirements. Its matte tin-plated leads comply with J-STD-002 and JESD 22-B102 for solderability, and the molding compound meets UL 94 V-0 flammability. These attributes simplify manufacturing integration. The SMCJ75AHE3/9AT is supplied in 13" tape-and-reel (9AT) packaging, optimized for high-volume SMT assembly lines.
SMCJ75AHE3/9AT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AB, SMC
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Discontinued at Digi-Key
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 75V
- Voltage - Breakdown (Min):
- 83.3V
- Voltage - Clamping (Max) @ Ipp:
- 121V
- Current - Peak Pulse (10/1000µs):
- 12.4A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AB (SMCJ)
SMCJ75AHE3/9AT FAQ
1.How can I place an order for SMCJ75AHE3/9AT through Aetrix?
Please submit a Request for Quotation (RFQ) for SMCJ75AHE3/9AT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMCJ75AHE3/9AT reliable?
The price and inventory of SMCJ75AHE3/9AT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMCJ75AHE3/9AT is usually 5 days.
3.What payment methods are accepted for SMCJ75AHE3/9AT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMCJ75AHE3/9AT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMCJ75AHE3/9AT?
SMCJ75AHE3/9AT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMCJ75AHE3/9AT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMCJ75AHE3/9AT?
For technical support, including SMCJ75AHE3/9AT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMCJ75AHE3/9AT requirements.
6.How does Aetrix verify that SMCJ75AHE3/9AT is sourced from the original manufacturer or authorized distributors?
All SMCJ75AHE3/9AT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMCJ75AHE3/9AT meets industry standards.
7.What is the process for return or replacement of SMCJ75AHE3/9AT?
All SMCJ75AHE3/9AT units undergo pre-shipment inspection (PSI). If there is an issue with SMCJ75AHE3/9AT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMCJ75AHE3/9AT part is unused and in its original packaging.
Return procedure for SMCJ75AHE3/9AT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMCJ75AHE3/9AT Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

