Vishay General Semiconductor - Diodes Division SMCJ75A-M3/9AT
- Part No.:
- SMCJ75A-M3/9AT
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AB, SMC
- Datasheet:
-
SMCJ75A-M3/9AT.pdf
- Description:
- TVS DIODE 75VWM 121VC DO214AB
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
SMCJ75A-M3/9AT from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in SMC (DO-214AB) package, designed for high-energy surge protection with 75 V standoff voltage (VWM), 83.3–92.1 V breakdown voltage (VBR), and 1500 W peak pulse power (10/1000 μs). It clamps transients to ≤121 V at 12.4 A peak pulse current and operates across –55 °C to +150 °C junction temperature.
For engineers reviewing the SMCJ75A-M3/9AT datasheet, SMCJ75A-M3/9AT pinout, SMCJ75A-M3/9AT application, or SMCJ75A-M3/9AT equivalent, this part serves as a halogen-free, RoHS-compliant TVS for automotive-grade and industrial power rail protection where fast response (<1 ns), low clamping ratio, and AEC-Q101-qualified variants are critical selection criteria.
Technical Context
The SMCJ75A-M3/9AT uses a glass-passivated silicon junction optimized for low incremental surge resistance and stable clamping under repetitive 10/1000 μs surges. Its unidirectional polarity features a cathode band marking and exhibits 1.0 μA max reverse leakage at 75 V, enabling reliable hold-off in DC-biased signal and power lines.
Thermally, it delivers RθJA = 75 °C/W (typ.) on standard 8.0 mm × 8.0 mm copper pads and supports 200 A non-repetitive forward surge (8.3 ms half-sine), making it suitable for protecting MOSFET gates, DC-DC converter inputs, and automotive ECUs against ISO 7637-2 and IEC 61000-4-5 threats.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 75 V - Maximum continuous reverse operating voltage before clamping begins; defines safe DC bias margin for protected line. |
| VBR (min/max) | 83.3 V / 92.1 V at 1.0 mA - Confirmed breakdown range ensures predictable turn-on during overvoltage events. |
| VC @ IPPM | 121 V at 12.4 A - Clamping voltage limits downstream component stress during full-rated 1500 W surge. |
| PPPM | 1500 W (10/1000 μs) - Peak surge energy handling capacity validated per ANSI/IEEE C62.35 standards. |
| IPPM | 12.4 A - Peak pulse current capability directly derived from VC and PPPM; enables precise PCB trace sizing. |
| TJ max | +150 °C - Maximum junction temperature rating supports operation in under-hood automotive and industrial enclosures. |
| Package | SMC (DO-214AB) - Standardized surface-mount outline with 0.320" body length and matte tin-plated leads compliant with J-STD-002. |
Pinout & Package
SMCJ75A-M3/9AT is housed in an SMC (DO-214AB) plastic package with two terminals: anode and cathode. The cathode is marked by a visible band on the body. Leads are matte tin-plated and solderable per J-STD-002 and JESD 22-B102.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Positive terminal in forward bias; connected to protected line's lower-potential side | Completes conduction path during reverse-transient clamping; must be routed to ground or return path. |
| Cathode | Negative terminal; marked by band on package body | Connected to higher-potential side (e.g., VIN, signal line); determines unidirectional clamping direction. |
Key Features
| Feature | Design Value |
|---|---|
| 1500 W peak pulse power | Enables robust protection against severe transients like load dump (ISO 7637-2 Pulse 5a) without derating in compact SMC footprint. |
| Clamping voltage ≤121 V | Provides 38% clamping ratio (VC/VWM)-tighter than typical 40–45%-reducing stress on downstream 100 V-rated MOSFETs or regulators. |
| Halogen-free & RoHS-compliant (M3 suffix) | Meets IPC-1752A material declaration requirements and JESD201 Class 2 whisker resistance for long-term reliability in humid environments. |
| MSL Level 1 (260 °C peak reflow) | Supports single-pass lead-free reflow assembly without moisture sensitivity concerns or baking preconditioning. |
| Low leakage (≤1.0 μA @ 75 V) | Minimizes standby power loss in battery-backed systems and avoids false triggering in high-impedance sensor interfaces. |
Applications
| Automotive Power Rail Protection | Industrial DC-DC Converter Input |
|---|---|
Use Scenario: Protecting 12 V/24 V vehicle electronics (e.g., body control modules) against alternator load dump and inductive switching spikes. IC Role / Device Role / Timing Role: Unidirectional TVS placed between battery rail and input capacitor to clamp transients before they reach LDOs or microcontrollers. Use Value: Withstands 1500 W surges and clamps to ≤121 V, ensuring compliance with ISO 7637-2 Pulse 5a (100 V/350 mΩ) test profiles. | Use Scenario: Safeguarding isolated DC-DC converter primary-side inputs in programmable logic controllers exposed to field wiring surges. IC Role / Device Role / Timing Role: Standoff device absorbing IEC 61000-4-5 Line-Earth surges (4 kV/2 Ω) on 48 V supply rails prior to transformer coupling. Use Value: 12.4 A peak pulse current rating allows direct placement without series impedance, preserving regulation accuracy and transient response. |
| MOSFET Gate Driver Protection | Sensor Signal Line Transient Suppression |
Use Scenario: Shielding high-side N-channel MOSFET gate drivers in motor drives from Miller-induced voltage spikes during fast switching. IC Role / Device Role / Timing Role: Low-capacitance TVS (CJ < 100 pF at 0 V) placed between gate and source to limit dv/dt-induced gate overvoltage. Use Value: Sub-1 ns response time prevents gate oxide breakdown while maintaining driver bandwidth due to minimal parasitic capacitance. | Use Scenario: Protecting analog outputs of pressure/temperature sensors in factory automation systems from ESD and cable discharge events. IC Role / Device Role / Timing Role: Unidirectional clamp referenced to sensor ground, shunting transients on 0–5 V or 4–20 mA output lines. Use Value: 1.0 μA max reverse leakage preserves signal integrity in high-impedance ratiometric circuits without offset drift. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ75A-M3/57T | Same electrical specs but SMB (DO-214AA) package - 30% smaller footprint, 1000 W PPPM. | Limited to lower-energy surges; unsuitable for ISO 7637-2 Pulse 5a or IEC 61000-4-5 4 kV tests. | Select when board space is constrained and surge threat level is ≤1000 W (e.g., consumer USB ports). |
| SMCJ75CA-M3/9AT | Bidirectional variant - identical VWM, VBR, PPPM, but symmetric clamping in both polarities. | Required for AC-coupled or floating signal lines (e.g., RS-485, CAN bus) where polarity reversal occurs. | Choose only if bidirectional protection is mandated; unidirectional SMCJ75A-M3/9AT offers tighter leakage and lower cost for DC rails. |
Compared with SMBJ75A-M3/57T, the SMCJ75A-M3/9AT delivers 50% higher surge power handling in a larger but thermally superior SMC package; versus SMCJ75CA-M3/9AT, it provides lower leakage and optimized clamping for fixed-polarity DC systems without sacrificing robustness.
Availability
SMCJ75A-M3/9AT is available at Aetrix Electronics and suitable for automotive ECU design, industrial power supply hardening, and sensor interface protection requiring stable component supply and halogen-free compliance.
Supply support for SMCJ75A-M3/9AT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, TVS devices, and optoelectronics with emphasis on reliability and automotive qualification.
The SMCJ series was developed specifically for high-power transient suppression in harsh environments, targeting AEC-Q101 compliance and robust performance in automotive, industrial, and telecom infrastructure applications.
FAQ
What is the maximum clamping voltage of the SMCJ75A-M3/9AT at its rated peak pulse current?
The SMCJ75A-M3/9AT has a maximum clamping voltage (VC) of 121 V when subjected to its rated peak pulse current (IPPM) of 12.4 A under a 10/1000 μs waveform. This value is measured per ANSI/IEEE C62.35 and confirmed in the Vishay datasheet revision 09-Jan-2024, Document Number 88394. The clamping performance ensures downstream components see limited overvoltage stress during surge events.
Is the SMCJ75A-M3/9AT suitable for automotive applications requiring AEC-Q101 qualification?
The SMCJ75A-M3/9AT itself is not AEC-Q101 qualified; it carries the M3 suffix indicating halogen-free and RoHS compliance for commercial-grade use. For automotive applications, Vishay offers the SMCJ75A-HM3_X variant (e.g., SMCJ75A-HM3_A/I), which adds AEC-Q101 qualification. Engineers must select the HM3 suffix version-not the M3-to meet automotive reliability requirements.
What is the thermal resistance from junction to ambient for the SMCJ75A-M3/9AT, and how does it affect layout?
The SMCJ75A-M3/9AT has a typical junction-to-ambient thermal resistance (RθJA) of 75 °C/W when mounted on minimum recommended 8.0 mm × 8.0 mm copper pads per terminal. This value requires adequate copper area and thermal vias in high-power surge scenarios to maintain TJ ≤ 150 °C. Layouts using smaller pads will increase RθJA, reducing safe surge repetition rate and derating margin.
Does the SMCJ75A-M3/9AT have polarity marking, and how is it identified on the package?
Yes, the SMCJ75A-M3/9AT is unidirectional and features a visible cathode band on the SMC (DO-214AB) package body. This band identifies the cathode terminal, which must be connected to the higher-potential side of the protected circuit (e.g., VIN). The anode is the unmarked end and connects to ground or return. Bidirectional variants (e.g., SMCJ75CA) omit this band.
What is the reverse leakage current specification for the SMCJ75A-M3/9AT at its standoff voltage?
The SMCJ75A-M3/9AT specifies a maximum reverse leakage current (ID) of 1.0 μA at its standoff voltage (VWM) of 75 V and TA = 25 °C. This low leakage supports energy-sensitive applications such as battery-powered sensors and ensures minimal impact on high-impedance bias networks. Leakage increases with temperature and voltage but remains below 10 μA up to 125 °C per datasheet curves.
SMCJ75A-M3/9AT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AB, SMC
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 75V
- Voltage - Breakdown (Min):
- 83.3V
- Voltage - Clamping (Max) @ Ipp:
- 121V
- Current - Peak Pulse (10/1000µs):
- 12.4A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AB (SMC)
SMCJ75A-M3/9AT FAQ
1.How can I place an order for SMCJ75A-M3/9AT through Aetrix?
Please submit a Request for Quotation (RFQ) for SMCJ75A-M3/9AT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMCJ75A-M3/9AT reliable?
The price and inventory of SMCJ75A-M3/9AT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMCJ75A-M3/9AT is usually 5 days.
3.What payment methods are accepted for SMCJ75A-M3/9AT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMCJ75A-M3/9AT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMCJ75A-M3/9AT?
SMCJ75A-M3/9AT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMCJ75A-M3/9AT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMCJ75A-M3/9AT?
For technical support, including SMCJ75A-M3/9AT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMCJ75A-M3/9AT requirements.
6.How does Aetrix verify that SMCJ75A-M3/9AT is sourced from the original manufacturer or authorized distributors?
All SMCJ75A-M3/9AT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMCJ75A-M3/9AT meets industry standards.
7.What is the process for return or replacement of SMCJ75A-M3/9AT?
All SMCJ75A-M3/9AT units undergo pre-shipment inspection (PSI). If there is an issue with SMCJ75A-M3/9AT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMCJ75A-M3/9AT part is unused and in its original packaging.
Return procedure for SMCJ75A-M3/9AT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMCJ75A-M3/9AT Tags

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DESD3V3E1BL-7B
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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Nexperia USA Inc.

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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