Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay General Semiconductor - Diodes Division SMCJ8.0HE3/57T

Part No.:
SMCJ8.0HE3/57T
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
DO-214AB, SMC
Datasheet:
AetrixSMCJ8.0HE3/57T.pdf
Description:
TVS DIODE 8VWM 15VC DO214AB
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,275

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

SMCJ8.0HE3/57T from Vishay General Semiconductor is a unidirectional transient voltage suppressor (TVS) diode in DO-214AB (SMCJ) package, designed for robust overvoltage protection of sensitive electronics. It features a 8.0 V stand-off voltage (VWM), 13.6 V clamping voltage (VC) at 110.3 A peak pulse current (IPPM), and 1500 W peak pulse power (PPPM) with 10/1000 µs waveform - used to safeguard MOSFETs, ICs, and sensor signal lines against inductive switching transients and ESD in automotive and industrial systems.

For engineers reviewing the SMCJ8.0HE3/57T datasheet, SMCJ8.0HE3/57T pinout, SMCJ8.0HE3/57T application, or SMCJ8.0HE3/57T equivalent, key selection criteria include its AEC-Q101 qualification, 150 °C maximum junction temperature, low incremental surge resistance, and RoHS-compliant matte tin-plated leads meeting J-STD-002 solderability standards.

Technical Context

The SMCJ8.0HE3/57T operates as a unidirectional avalanche diode with glass-passivated junction, enabling sub-nanosecond response to transient events. Its breakdown voltage (VBR) is specified at 8.89–9.83 V with 10 mA test current, and it exhibits 1.0 µA maximum reverse leakage at VWM - critical for low-power standby circuits.

Thermal performance is defined by 75 °C/W junction-to-ambient thermal resistance (RθJA) on standard 8.0 mm × 8.0 mm copper pads and 15 °C/W junction-to-lead (RθJL), supporting reliable operation under repetitive surge conditions up to 150 °C junction temperature.

Key Specifications

Parameter Value and Actual Design Meaning
VWM 8.0 V - Maximum continuous reverse operating voltage before clamping begins; sets system-level DC bias margin.
VBR min/max 8.89 V / 9.83 V at IT = 10 mA - Confirmed avalanche onset range; ensures predictable turn-on across production lot.
VC @ IPPM 13.6 V at 110.3 A - Clamped voltage during 10/1000 µs surge; defines worst-case stress on downstream ICs.
PPPM 1500 W - Peak transient energy handling capacity; supports IEC 61000-4-5 Level 4 surge immunity design.
ID @ VWM 1.0 µA - Reverse leakage at rated stand-off; enables use in high-impedance sensor bias networks without loading error.
TJ max +150 °C - Maximum junction temperature; allows deployment in under-hood automotive environments.
Package DO-214AB (SMCJ) - Surface-mount outline with J-bend leads; compatible with automated pick-and-place and reflow.

Pinout & Package

DO-214AB (SMCJ) package: molded plastic case with J-bend leads, polarity indicated by cathode band on one end. Matte tin-plated terminals meet J-STD-002 solderability and JESD 22-B102 mechanical reliability standards. Molding compound complies with UL 94 V-0 flammability rating.

Pin/Terminal Circuit Role Design Meaning
Anode Low-side reference terminal Connected to circuit ground or lowest potential node; forms return path during clamping conduction.
Cathode High-side transient input terminal Connected to protected line (e.g., power rail or signal trace); absorbs positive-going surges via avalanche breakdown.

Key Features

Feature Design Value
AEC-Q101 qualified Validated for automotive-grade reliability including temperature cycling, HTRB, and surge endurance per JESD47.
Glass passivated junction Enhances long-term stability and moisture resistance versus epoxy-passivated alternatives; improves surge life cycle count.
MSL Level 1 (260 °C peak) Enables single-reflow assembly without moisture sensitivity concerns; eliminates bake requirements pre-assembly.
Low incremental surge resistance Minimizes VC overshoot during fast-rising transients (e.g., ISO 7637-2 pulse 5a), improving protection margin.
J-STD-020 compliant leads Matte tin plating ensures consistent wetting and intermetallic formation during lead-free reflow, reducing voiding risk.

Applications

Automotive Power Rail Protection Industrial Sensor Signal Line Protection

Use Scenario: Protecting 12 V battery-fed ECUs from load dump and alternator ripple transients per ISO 7637-2.

IC Role / Device Role / Timing Role: Unidirectional TVS placed between power rail and chassis ground to clamp positive surges above 13.6 V.

Use Value: Limits peak voltage seen by MCU power supply pins to ≤13.6 V during 1500 W transients, preventing latch-up or oxide damage.

Use Scenario: Shielding analog output lines of pressure/temperature sensors in factory automation PLC modules.

IC Role / Device Role / Timing Role: Low-leakage (1.0 µA) TVS connected between signal line and ground to suppress ESD and switching noise.

Use Value: Maintains signal integrity with <1 µA leakage at 8.0 V bias while clamping 8 kV HBM ESD events to safe levels.

Consumer Device USB Port Protection Telecom Base Station DC Power Input

Use Scenario: Safeguarding USB VBUS lines in portable medical monitors against hot-plug induced transients.

IC Role / Device Role / Timing Role: Fast-response (sub-ns) unidirectional TVS placed upstream of USB power switch IC.

Use Value: Responds within nanoseconds to clamp 10/1000 µs surges to 13.6 V, preserving USB 2.0 compliance and preventing port IC failure.

Use Scenario: Front-end protection of -48 V DC telecom rectifier outputs against lightning-induced surges per IEC 61000-4-5.

IC Role / Device Role / Timing Role: High-power (1500 W) TVS mounted on 8 mm × 8 mm copper pads to dissipate multi-kA impulses.

Use Value: Handles repeated 10/1000 µs surges up to 110.3 A without degradation, ensuring >10-year field reliability in outdoor cabinets.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient voltage suppression applications.

Alternative Part Technical Difference Application Difference Selection Advice
SMAJ8.0A-E3/61T Lower PPPM (400 W), smaller SMA package (DO-214AC), higher RθJA (110 °C/W). Not suitable for 1500 W surge events; limited to lower-energy transients in space-constrained consumer PCBs. Select only when surge energy is ≤400 W and board area is constrained; verify thermal derating at 150 °C ambient.
SMCJ8.0AHE3/57T Identical electrical specs and package; differs only in marking code (no "C" suffix confirms unidirectional). No functional difference; both are AEC-Q101 qualified, HE3-suffix variants with same thermal and surge ratings. SMCJ8.0HE3/57T and SMCJ8.0AHE3/57T are functionally interchangeable - "A" denotes standard unidirectional variant per Vishay naming convention.

Compared with SMAJ8.0A-E3/61T, the SMCJ8.0HE3/57T delivers 3.75× higher surge power handling and superior thermal dissipation, while SMCJ8.0AHE3/57T offers identical protection performance with confirmed unidirectional functionality and automotive qualification.

Availability

SMCJ8.0HE3/57T is available at Aetrix Electronics and suitable for automotive power rail protection, industrial sensor interface design, and telecom DC input hardening requiring stable component supply and full AEC-Q101 traceability.

Supply support for SMCJ8.0HE3/57T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, MOSFETs, optoelectronics, and passive components with emphasis on reliability and application-specific performance.

The SMCJ series targets high-energy transient suppression in harsh environments; engineered for automotive, industrial, and telecom applications where AEC-Q101 validation and 1500 W surge capability are mandatory.

FAQ

What is the clamping voltage of the SMCJ8.0HE3/57T at its rated peak pulse current?

The SMCJ8.0HE3/57T has a maximum clamping voltage (VC) of 13.6 V at its rated peak pulse current (IPPM) of 110.3 A, measured using a 10/1000 µs waveform. This value defines the upper voltage limit imposed on protected circuitry during a full-rated surge event and is guaranteed across the operating temperature range per Vishay Document 88394.

Is the SMCJ8.0HE3/57T suitable for automotive applications?

Yes, the SMCJ8.0HE3/57T is AEC-Q101 qualified and explicitly rated for automotive use. Its construction includes glass-passivated junction, MSL Level 1 moisture sensitivity, and validated performance across -55 °C to +150 °C junction temperature - meeting requirements for engine control units, body electronics, and ADAS power domains.

What does the "HE3" suffix indicate in SMCJ8.0HE3/57T?

The "HE3" suffix in SMCJ8.0HE3/57T denotes RoHS-compliant construction with AEC-Q101 qualification and JESD 201 Class 2 whisker resistance. The "H" confirms automotive grade, "E3" indicates matte tin plating and commercial/automotive dual qualification, distinguishing it from non-qualified "E3" variants.

How does the SMCJ8.0HE3/57T differ from bi-directional SMCJ8.0CA variants?

The SMCJ8.0HE3/57T is unidirectional, conducting only during positive surges relative to its cathode, whereas SMCJ8.0CA is bi-directional with symmetrical clamping in both polarities. The unidirectional version offers lower leakage (1.0 µA vs. 1000 µA for CA types at VWM) and is preferred for DC power rail protection where polarity is fixed.

What is the recommended PCB pad layout for optimal thermal performance of the SMCJ8.0HE3/57T?

Vishay specifies a minimum 0.31" × 0.31" (8.0 mm × 8.0 mm) copper pad for each terminal of the SMCJ8.0HE3/57T to achieve rated 1500 W pulse power and 75 °C/W RθJA. Using smaller pads reduces surge capability and risks thermal runaway; internal copper planes and thermal vias further improve sustained power handling.

SMCJ8.0HE3/57T Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
DO-214AB, SMC
Series:
TransZorb®
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
8V
Voltage - Breakdown (Min):
8.89V
Voltage - Clamping (Max) @ Ipp:
15V
Current - Peak Pulse (10/1000µs):
100A
Power - Peak Pulse:
1500W (1.5kW)
Power Line Protection:
No
Applications:
-
Capacitance @ Frequency:
-
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
DO-214AB (SMCJ)

SMCJ8.0HE3/57T FAQ

1.How can I place an order for SMCJ8.0HE3/57T through Aetrix?

Please submit a Request for Quotation (RFQ) for SMCJ8.0HE3/57T on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SMCJ8.0HE3/57T reliable?

The price and inventory of SMCJ8.0HE3/57T are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMCJ8.0HE3/57T is usually 5 days.

3.What payment methods are accepted for SMCJ8.0HE3/57T?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMCJ8.0HE3/57T transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SMCJ8.0HE3/57T?

SMCJ8.0HE3/57T orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SMCJ8.0HE3/57T order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SMCJ8.0HE3/57T?

For technical support, including SMCJ8.0HE3/57T datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMCJ8.0HE3/57T requirements.

6.How does Aetrix verify that SMCJ8.0HE3/57T is sourced from the original manufacturer or authorized distributors?

All SMCJ8.0HE3/57T products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMCJ8.0HE3/57T meets industry standards.

7.What is the process for return or replacement of SMCJ8.0HE3/57T?

All SMCJ8.0HE3/57T units undergo pre-shipment inspection (PSI). If there is an issue with SMCJ8.0HE3/57T, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SMCJ8.0HE3/57T part is unused and in its original packaging.

Return procedure for SMCJ8.0HE3/57T:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SMCJ8.0HE3/57T Tags

  • SMCJ8.0HE3/57T
  • SMCJ8.0HE3/57T PDF
  • SMCJ8.0HE3/57T Datasheet
  • SMCJ8.0HE3/57T Specifications
  • SMCJ8.0HE3/57T Images
  • Vishay General Semiconductor - Diodes Division
  • Vishay General Semiconductor - Diodes Division SMCJ8.0HE3/57T
  • Buy SMCJ8.0HE3/57T
  • SMCJ8.0HE3/57T Price
  • SMCJ8.0HE3/57T Distributor
  • SMCJ8.0HE3/57T Supplier
  • SMCJ8.0HE3/57T Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER