Vishay General Semiconductor - Diodes Division SMCJ8.5AHE3/9AT
- Part No.:
- SMCJ8.5AHE3/9AT
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AB, SMC
- Datasheet:
-
SMCJ8.5AHE3/9AT.pdf
- Description:
- TVS DIODE 8.5VWM 14.4VC DO214AB
- Quantity:
- Payment:

- Shipping:

Inventory:7,726
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SMCJ8.5AHE3/9AT from Vishay General Semiconductor is a unidirectional surface-mount Transient Voltage Suppressor (TVS) diode in SMC (DO-214AB) package, designed for clamping voltage transients on power and signal lines. It features a 8.5 V standoff voltage (VWM), 9.44–10.4 V breakdown voltage (VBR) at 1 mA, 1500 W peak pulse power (10/1000 µs), and clamps to ≤14.4 V at 104.2 A peak surge current - used in automotive ECUs, industrial I/O protection, and DC power rail surge suppression.
For engineers reviewing the SMCJ8.5AHE3/9AT datasheet, SMCJ8.5AHE3/9AT pinout, SMCJ8.5AHE3/9AT application, or SMCJ8.5AHE3/9AT equivalent, this page delivers verified electrical parameters, AEC-Q101 qualification status, thermal resistance (RθJA = 75 °C/W), junction temperature range (–55 to +150 °C), and real-world design implications for transient immunity in 12 V and 24 V systems.
Technical Context
The SMCJ8.5AHE3/9AT operates as a unidirectional avalanche diode with glass-passivated junction, optimized for fast response (<1 ns) to ESD and lightning-induced surges. Its low incremental surge resistance ensures stable clamping under high-current transients, while the MSL Level 1 rating supports lead-free reflow up to 260 °C peak.
Designed for placement on 8.0 mm × 8.0 mm copper pads per terminal, it delivers 1500 W peak pulse power with derating above 25 °C ambient. The cathode band marking enables unambiguous polarity identification during automated assembly - critical for correct orientation in DC-biased protection circuits.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 8.5 V - maximum continuous reverse operating voltage before clamping begins; matches nominal 12 V system rails with margin. |
| VBR min/max | 9.44 V / 10.4 V at 1 mA - defines guaranteed avalanche onset window; ensures predictable turn-on across temperature and unit variation. |
| VC @ IPPM | ≤14.4 V at 104.2 A - clamped voltage during 10/1000 µs surge; limits downstream IC stress below 15 V absolute max ratings. |
| PPPM | 1500 W - peak pulse power handling capability; sustains 104.2 A surge without failure when mounted per recommended pad layout. |
| ID @ VWM | ≤20 µA - reverse leakage at 8.5 V; negligible power loss and minimal impact on high-impedance sensor or bias networks. |
| TJ range | –55 °C to +150 °C - qualified for under-hood automotive and industrial environments; supports AEC-Q101 reliability requirements. |
| RθJA | 75 °C/W - thermal resistance junction-to-ambient; informs board-level thermal design when derating power at elevated ambient temperatures. |
Pinout & Package
Package: SMC (DO-214AB), surface-mount, matte tin-plated leads, RoHS-compliant and AEC-Q101 qualified (HE3 suffix). Dimensions: 7.11 mm × 6.22 mm × 2.62 mm (L × W × H); cathode marked by single band.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Low-side connection in unidirectional configuration | Connected to ground or return path; must be routed with low-inductance trace to maintain clamping speed. |
| Cathode | High-side connection; marked by band | Connected to protected line (e.g., 12 V rail or signal input); polarity reversal causes device failure. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive electronics per stress test requirements - enables use in engine control, ADAS, and body modules without additional qualification. |
| 1500 W peak pulse power | Withstands IEC 61000-4-5 Level 4 (4 kV/2 Ω) surges on 12 V lines when properly laid out - eliminates need for cascaded protection stages. |
| Low clamping voltage (14.4 V) | Keeps protected ICs within safe operating area during transients - avoids latch-up or overvoltage damage in microcontrollers and CAN transceivers. |
| MSL Level 1, 260 °C peak | Compatible with standard lead-free reflow profiles - supports high-yield automated assembly without moisture sensitivity concerns. |
| Glass passivated junction | Ensures long-term stability of breakdown characteristics and low leakage drift over temperature and lifetime - critical for field-reliability in harsh environments. |
Applications
| Automotive Power Rail Protection | Industrial Sensor Interface Protection |
|---|---|
Use Scenario: Protecting 12 V supply inputs in engine control units (ECUs) against load dump and ISO 7637-2 pulses. IC Role / Device Role / Timing Role: Unidirectional TVS clamping transient energy before it reaches LDOs, microcontrollers, and CAN FD transceivers. Use Value: Limits voltage excursion to ≤14.4 V during 100 A/100 ms load dump events - prevents brownout resets and silicon damage. | Use Scenario: Shielding analog sensor outputs (e.g., pressure, temperature) in factory automation PLCs from EFT and surge coupling. IC Role / Device Role / Timing Role: Low-capacitance (≈1000 pF) shunt clamp on 0–5 V or 4–20 mA signal lines exposed to motor drive noise. Use Value: Maintains signal integrity by clamping transients <1 ns, with leakage <20 µA preserving measurement accuracy. |
| DC-DC Converter Input Protection | Telecom Power Shelf Surge Suppression |
Use Scenario: Safeguarding buck converter inputs in PoE-powered devices against induced surges from nearby AC wiring. IC Role / Device Role / Timing Role: Primary front-end TVS placed upstream of input filter capacitors and MOSFET switches. Use Value: Absorbs 1500 W surge energy without degradation, enabling compact 2-layer PCB designs with no heatsink required. | Use Scenario: Secondary-stage protection on 48 V telecom power distribution boards subjected to lightning-induced surges per IEC 61000-4-5. IC Role / Device Role / Timing Role: Standoff-rated (8.5 V) device used in series with higher-voltage TVS or GDT for coordinated staging. Use Value: Provides precise low-voltage clamping threshold to protect downstream DC-DC controllers and monitoring ICs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ8.5A-E3/61T | Lower PPPM (400 W), SMA package (smaller footprint, higher RθJA = 110 °C/W) | Suitable only for lower-energy transients (IEC 61000-4-2 ESD, not full load dump) | Select when space-constrained and surge threat level is limited to ESD or low-energy switching noise. |
| SMCJ8.5CAHE3/9AT | Bidirectional variant; same VWM (8.5 V), symmetric clamping in both polarities | Required for AC-coupled or floating signal lines where polarity reversal occurs (e.g., RS-485, audio) | Choose for bidirectional protection needs; not interchangeable in DC-biased circuits due to different conduction behavior. |
Compared with SMAJ8.5A-E3/61T, the SMCJ8.5AHE3/9AT delivers 3.75× higher surge power handling and superior thermal performance; versus SMCJ8.5CAHE3/9AT, it provides tighter clamping in DC applications but lacks reverse-polarity protection - making it optimal for grounded 12 V rail protection where unidirectional operation is sufficient and cost-sensitive.
Availability
SMCJ8.5AHE3/9AT is available at Aetrix Electronics and suitable for automotive ECU design, industrial I/O module development, and telecom power shelf production requiring stable component supply and AEC-Q101 compliance.
Supply support for SMCJ8.5AHE3/9AT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, power efficiency, and automotive-grade qualification.
The SMCJ series targets high-energy transient suppression in demanding environments - engineered specifically for automotive, industrial, and telecom infrastructure where robustness against load dump, EFT, and lightning surges is non-negotiable.
FAQ
What is the clamping voltage of the SMCJ8.5AHE3/9AT under a 10/1000 µs surge?
The SMCJ8.5AHE3/9AT clamps to a maximum of 14.4 V when subjected to its rated peak pulse current of 104.2 A (10/1000 µs waveform). This value is measured under standardized test conditions with the device mounted on 8.0 mm × 8.0 mm copper pads per terminal - critical for achieving the specified 1500 W surge rating. Exceeding recommended layout reduces effective clamping performance.
Is the SMCJ8.5AHE3/9AT AEC-Q101 qualified?
Yes, the SMCJ8.5AHE3/9AT is AEC-Q101 qualified, as confirmed by Vishay's ordering code suffix "HE3", which denotes RoHS-compliant and AEC-Q101 qualified versions. This qualification covers stress tests including high-temperature operating life, temperature cycling, and ESD - validating suitability for automotive powertrain and chassis applications where reliability is mission-critical.
What does the "9AT" suffix indicate in SMCJ8.5AHE3/9AT?
The "9AT" suffix in SMCJ8.5AHE3/9AT specifies the packaging format: 13-inch diameter plastic tape and reel, with a base quantity of 3500 units per reel. This format supports high-volume automated pick-and-place assembly and is distinct from the "57T" (7-inch reel, 850 units) option - ensuring compatibility with standard SMT line feeders and inventory planning for production-scale builds.
Can the SMCJ8.5AHE3/9AT be used in bidirectional signal lines?
No, the SMCJ8.5AHE3/9AT is a unidirectional TVS diode and must not be used on bidirectional or AC-coupled lines. Its cathode band marks the high-side terminal; reverse polarity application will cause forward conduction and potential failure. For bidirectional protection, use the SMCJ8.5CAHE3/9AT variant - identical in all other respects except symmetrical breakdown in both directions.
What is the thermal resistance junction-to-ambient (RθJA) for the SMCJ8.5AHE3/9AT?
The SMCJ8.5AHE3/9AT has a typical RθJA of 75 °C/W when mounted per Vishay's recommended pad layout (0.31″ × 0.31″ copper pads per terminal). This value assumes still air convection and directly impacts power derating: at 70 °C ambient, maximum continuous power drops to ~3.3 W. Board-level copper area and airflow significantly influence actual thermal performance in end equipment.
SMCJ8.5AHE3/9AT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AB, SMC
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Discontinued at Digi-Key
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 8.5V
- Voltage - Breakdown (Min):
- 9.44V
- Voltage - Clamping (Max) @ Ipp:
- 14.4V
- Current - Peak Pulse (10/1000µs):
- 104.2A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AB (SMCJ)
SMCJ8.5AHE3/9AT FAQ
1.How can I place an order for SMCJ8.5AHE3/9AT through Aetrix?
Please submit a Request for Quotation (RFQ) for SMCJ8.5AHE3/9AT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMCJ8.5AHE3/9AT reliable?
The price and inventory of SMCJ8.5AHE3/9AT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMCJ8.5AHE3/9AT is usually 5 days.
3.What payment methods are accepted for SMCJ8.5AHE3/9AT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMCJ8.5AHE3/9AT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMCJ8.5AHE3/9AT?
SMCJ8.5AHE3/9AT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMCJ8.5AHE3/9AT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMCJ8.5AHE3/9AT?
For technical support, including SMCJ8.5AHE3/9AT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMCJ8.5AHE3/9AT requirements.
6.How does Aetrix verify that SMCJ8.5AHE3/9AT is sourced from the original manufacturer or authorized distributors?
All SMCJ8.5AHE3/9AT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMCJ8.5AHE3/9AT meets industry standards.
7.What is the process for return or replacement of SMCJ8.5AHE3/9AT?
All SMCJ8.5AHE3/9AT units undergo pre-shipment inspection (PSI). If there is an issue with SMCJ8.5AHE3/9AT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMCJ8.5AHE3/9AT part is unused and in its original packaging.
Return procedure for SMCJ8.5AHE3/9AT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMCJ8.5AHE3/9AT Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

