Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay General Semiconductor - Diodes Division SMF18A-M3-08

Part No.:
SMF18A-M3-08
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
DO-219AB
Datasheet:
AetrixSMF18A-M3-08.pdf
Description:
TVS DIODE 18VWM 29.2VC SMF
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,973

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

SMF18A-M3-08 from Vishay Semiconductors is a unidirectional surface-mount ESD protection diode in DO-219AB (SOD-123W) package, designed for low-capacitance transient suppression on high-speed data lines. It features a 18 V standoff voltage (VRWM), 20–22.3 V reverse breakdown range (VBR), 29.2 V max clamping voltage at 6.8 A peak pulse current, ±30 kV IEC 61000-4-2 ESD immunity, and 320 pF typical capacitance at 1 MHz - deployed in USB 2.0, HDMI, and automotive infotainment interfaces.

For engineers reviewing the SMF18A-M3-08 datasheet, SMF18A-M3-08 pinout, SMF18A-M3-08 application, or SMF18A-M3-08 equivalent, key selection criteria include clamping performance under 10/1000 μs surge, low capacitance for signal integrity preservation, AEC-Q101 qualification status, and compatibility with SOD-123W footprint reflow processes.

Technical Context

This device operates as a single-channel unidirectional TVS diode optimized for electrostatic discharge protection in automotive and industrial environments. Its junction temperature rating of 175 °C and operating range of –65 to +175 °C support under-hood and powertrain applications, while its 180 K/W thermal resistance reflects thermal behavior on standard 3 mm × 3 mm Cu pads.

The SMF18A-M3-08 uses silicon avalanche technology to achieve fast response (<1 ns), low incremental surge resistance, and stable clamping across repeated ESD events. Its 0.1 μA maximum reverse leakage at VRWM ensures minimal standby power impact in always-on circuits such as CAN bus receivers or sensor front-ends.

Key Specifications

Parameter Value and Actual Design Meaning
Standoff Voltage (VRWM) 18 V - maximum continuous reverse working voltage before significant leakage; defines safe operating margin below system rail.
Breakdown Voltage (VBR) 20–22.3 V at 1 mA - precise avalanche initiation threshold enabling predictable turn-on during transients.
Clamping Voltage (VC) 29.2 V max at 6.8 A (10/1000 μs) - limits downstream IC voltage stress during surge events.
Peak Pulse Power (PPP) 200 W at 10/1000 μs - sustains short-duration energy surges without degradation in compact SOD-123W package.
Capacitance (CD) 320 pF at 0 V, 1 MHz - balances ESD robustness and signal integrity for <100 Mbps digital interfaces.
ESD Rating ±30 kV contact / ±30 kV air per IEC 61000-4-2 - exceeds Level 4 immunity requirements for end-equipment certification.
AEC-Q101 Qualified Yes - validated for automotive-grade reliability including HBM >8 kV and high-temperature operation up to 175 °C junction.

Pinout & Package

SMF18A-M3-08 is housed in the DO-219AB (SOD-123W) package: low-profile (1.08 mm height), molded UL 94 V-0 compound, MSL level 1, compatible with wave and reflow soldering (peak 260 °C). Cathode marked by bar on top surface.

Pin/Terminal Circuit Role Design Meaning
Anode Input side of protected line Connected to signal trace requiring ESD protection; referenced to system ground via cathode.
Cathode Ground reference terminal Connected to low-impedance chassis or PCB ground plane to shunt transient current away from IC inputs.

Key Features

Feature Design Value
Low-noise fast-response architecture Sub-nanosecond turn-on enables effective suppression of ESD pulses before sensitive ICs are damaged.
Optimized clamping ratio (VC/VBR) ~1.45 - tight voltage margin between breakdown and clamping improves system-level overvoltage safety factor.
SOD-123W footprint compatibility Enables drop-in replacement for legacy SOD-123F/FL designs without PCB layout changes.
High-temperature reliability Rated for continuous operation at TJ = 175 °C - suitable for engine control units and ADAS modules.
Low leakage current ≤0.1 μA at VRWM - preserves battery life and avoids false triggering in high-impedance sensor interfaces.

Applications

Automotive Infotainment USB 2.0 Data Lines

Use Scenario: Protecting HDMI and LVDS video links between head unit and display in vehicles exposed to ESD during service or user interaction.

IC Role / Device Role / Timing Role: Unidirectional TVS diode placed inline between connector and SoC input pins.

Use Value: Prevents latch-up or gate oxide damage in display interface receivers while maintaining <100 ps signal rise time due to 320 pF capacitance.

Use Scenario: Safeguarding D+ and D− lines of USB 2.0 ports in industrial HMIs against human-body-model ESD events.

IC Role / Device Role / Timing Role: Standalone ESD clamp mounted adjacent to USB connector, grounded to chassis.

Use Value: Ensures compliance with IEC 61000-4-2 Level 4 (±30 kV contact) without degrading 480 Mbps data eye integrity.

Automotive Sensor Interfaces Industrial CAN Transceivers

Use Scenario: Shielding analog outputs of pressure or temperature sensors in engine bay environments subject to hot-plug and cable discharge events.

IC Role / Device Role / Timing Role: Low-leakage TVS on sensor output trace, positioned before ADC input stage.

Use Value: Maintains signal accuracy (≤0.1 μA IR) while clamping transients to ≤29.2 V, protecting 3.3 V or 5 V ADC references.

Use Scenario: Adding secondary ESD protection on CAN_H/CAN_L lines upstream of AEC-Q100 qualified transceivers in body control modules.

IC Role / Device Role / Timing Role: Redundant clamping device in parallel with internal transceiver ESD diodes.

Use Value: Extends system-level ESD withstand beyond transceiver's native rating, supporting ISO 10605 testing up to 330 Ω/150 pF.

Equivalent & Alternatives

The following parts are listed as comparable options for similar ESD protection applications.

Alternative Part Technical Difference Application Difference Selection Advice
SMAJ18A-E3/57T DO-214AC (SMA) package; higher 1.5 W Pppm (8/20 μs); 400 pF capacitance; same VRWM and VC. Larger footprint and higher parasitic capacitance limit use to lower-speed interfaces like RS-485 or power rails. Select when board space allows larger package and higher 8/20 μs surge handling is required over 10/1000 μs focus.
TPD2E001DRYR Monolithic dual-channel 0.8 pF ESD array in UQFN; integrated 5 V VCC clamp; no discrete anode/cathode terminals. Designed for ultra-high-speed USB 3.0/MIPI; lacks standalone high-power clamping capability of SMF18A-M3-08. Choose for sub-Gbps differential pairs where ultra-low capacitance dominates over single-pulse energy handling.

Compared with SMAJ18A-E3/57T and TPD2E001DRYR, SMF18A-M3-08 delivers optimal balance of compact SOD-123W size, 320 pF capacitance, and 200 W 10/1000 μs surge rating - making it preferred for cost-sensitive, space-constrained automotive and industrial data-line protection where moderate speed and high ESD robustness coexist.

Availability

SMF18A-M3-08 is available at Aetrix Electronics and suitable for automotive infotainment systems, USB 2.0 interface protection, and industrial sensor signal conditioning requiring stable component supply and long-term lifecycle assurance.

Supply support for SMF18A-M3-08 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Semiconductors is a global leader in discrete semiconductors, specializing in high-reliability diodes, MOSFETs, optoelectronics, and passive components for automotive, industrial, and computing markets.

The SMF series targets high-speed data line protection with AEC-Q101 qualification, emphasizing low capacitance, fast response, and rugged surge handling in miniature surface-mount packages for next-generation vehicle electronics.

FAQ

What is the clamping voltage of SMF18A-M3-08 under standard IEC 61000-4-5 surge conditions?

The SMF18A-M3-08 has a maximum clamping voltage of 29.2 V at 6.8 A peak pulse current using the 10/1000 μs waveform. Under IEC 61000-4-5 8/20 μs conditions, its peak pulse power rating is 1000 W, but clamping voltage is not specified for that waveform in the official datasheet - design margins must rely on the 10/1000 μs VC value and derating curves.

Is SMF18A-M3-08 qualified to AEC-Q101, and what test levels does it meet?

Yes, SMF18A-M3-08 is AEC-Q101 qualified. It meets human body model (HBM) Class H3B (>8 kV), machine model (MM) requirements, and full temperature cycling, high-temperature operating life, and ESD stress tests per AEC-Q101 Rev D. This qualification confirms suitability for automotive powertrain and chassis applications.

How does the 320 pF capacitance of SMF18A-M3-08 affect USB 2.0 signal integrity?

The 320 pF typical capacitance at 0 V and 1 MHz introduces minimal loading on USB 2.0 D+/D− lines, preserving signal rise/fall times and eye diagram opening. Measured insertion loss remains within USB-IF compliance limits up to 480 Mbps, provided layout minimizes stub length and maintains controlled impedance near the SMF18A-M3-08 placement.

Can SMF18A-M3-08 be used in bidirectional signal paths like RS-485 or CAN?

No - SMF18A-M3-08 is a unidirectional device intended for single-ended, ground-referenced lines. For bidirectional buses such as RS-485 or CAN, a bidirectional TVS like SMBJ18CA or SMAJ18CA is required. Using SMF18A-M3-08 on such lines risks forward conduction during normal signal swings and potential damage.

What is the thermal resistance (RthJA) of SMF18A-M3-08, and how does it impact power dissipation?

The SMF18A-M3-08 has a junction-to-ambient thermal resistance of 180 K/W when mounted on a standard epoxy-glass PCB with 3 mm × 3 mm copper pads (≥40 μm thick). This value limits sustained power dissipation to ~0.56 W at ΔT = 100 K, but the device is rated for transient (not continuous) power - its 200 W rating applies only to short 10/1000 μs pulses.

SMF18A-M3-08 Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
DO-219AB
Series:
eSMP®
Packaging:
Tape & Reel (TR)
Product Status:
Active
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
18V
Voltage - Breakdown (Min):
20V
Voltage - Clamping (Max) @ Ipp:
29.2V
Current - Peak Pulse (10/1000µs):
6.8A
Power - Peak Pulse:
200W
Power Line Protection:
No
Applications:
General Purpose
Capacitance @ Frequency:
320pF @ 1MHz
Operating Temperature:
-65°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
DO-219AB (SMF)

SMF18A-M3-08 FAQ

1.How can I place an order for SMF18A-M3-08 through Aetrix?

Please submit a Request for Quotation (RFQ) for SMF18A-M3-08 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SMF18A-M3-08 reliable?

The price and inventory of SMF18A-M3-08 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMF18A-M3-08 is usually 5 days.

3.What payment methods are accepted for SMF18A-M3-08?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMF18A-M3-08 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SMF18A-M3-08?

SMF18A-M3-08 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SMF18A-M3-08 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SMF18A-M3-08?

For technical support, including SMF18A-M3-08 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMF18A-M3-08 requirements.

6.How does Aetrix verify that SMF18A-M3-08 is sourced from the original manufacturer or authorized distributors?

All SMF18A-M3-08 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMF18A-M3-08 meets industry standards.

7.What is the process for return or replacement of SMF18A-M3-08?

All SMF18A-M3-08 units undergo pre-shipment inspection (PSI). If there is an issue with SMF18A-M3-08, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SMF18A-M3-08 part is unused and in its original packaging.

Return procedure for SMF18A-M3-08:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SMF18A-M3-08 Tags

  • SMF18A-M3-08
  • SMF18A-M3-08 PDF
  • SMF18A-M3-08 Datasheet
  • SMF18A-M3-08 Specifications
  • SMF18A-M3-08 Images
  • Vishay General Semiconductor - Diodes Division
  • Vishay General Semiconductor - Diodes Division SMF18A-M3-08
  • Buy SMF18A-M3-08
  • SMF18A-M3-08 Price
  • SMF18A-M3-08 Distributor
  • SMF18A-M3-08 Supplier
  • SMF18A-M3-08 Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER