My Inquiry
My Account
Vishay SMF8V0A-HM3_A08
- Part No.:
- SMF8V0A-HM3_A08
- Manufacturer:
- Vishay
- Category:
- TVS Diodes
- Package:
- DO-219AB
- Datasheet:
-
SMF8V0A-HM3_A08.pdf
- Description:
- ESD PROTECTION DIODE SMF DO219AB
- Quantity:
- Payment:
- Shipping:
Inventory:5,730
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SMF8V0A-HM3_A08 from Vishay Semiconductors is a unidirectional surface-mount ESD protection diode in the SMF (DO-219AB) package, designed for low-capacitance transient voltage suppression in high-speed data lines. It features a 8.0 V stand-off voltage (VRWM), 13.6 V maximum clamping voltage at 14.7 A peak pulse current, ±30 kV IEC 61000-4-2 ESD immunity, and 706 pF typical junction capacitance at 0 V - optimized for USB 2.0, HDMI, and industrial sensor interface protection.
For engineers reviewing the SMF8V0A-HM3_A08 datasheet, SMF8V0A-HM3_A08 pinout, SMF8V0A-HM3_A08 application, or SMF8V0A-HM3_A08 equivalent, this device delivers verified AEC-Q101 qualification, low-noise fast response, and SOD-123W-compatible footprint - critical for automotive infotainment, industrial I/O, and space-constrained PCB designs requiring robust electrostatic discharge resilience without signal integrity degradation.
Technical Context
This diode operates as a unidirectional TVS clamp with avalanche breakdown behavior, triggered when reverse voltage exceeds its 8.89–9.9 V breakdown range (tested at 1 mA). Its low incremental surge resistance enables tight clamping during 10/1000 μs transients, limiting downstream IC voltage stress to ≤13.6 V at 14.7 A.
The device uses "Low Noise" silicon technology for sub-nanosecond response time and integrates into standard reflow processes per J-STD-020 MSL level 1. It supports continuous operation from –65 °C to +175 °C and meets AEC-Q101 stress test requirements including HBM >8 kV (Class H3B).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Stand-off Voltage (VRWM) | 8.0 V - maximum continuous reverse voltage before significant leakage; sets operating margin for 5 V or 3.3 V bus protection. |
| Breakdown Voltage (VBR) | 8.89–9.9 V at 1 mA - defines precise conduction onset; ensures reliable triggering above normal signal swing. |
| Clamping Voltage (VC) | 13.6 V at 14.7 A (10/1000 μs) - limits transient overvoltage seen by protected IC; critical for safeguarding 12 V-tolerant receivers. |
| Junction Capacitance (CD) | 706 pF at 0 V, 1 MHz - low enough for USB 2.0 (480 Mbps) and RS-485; avoids signal rise-time degradation. |
| ESD Immunity | ±30 kV contact / ±30 kV air (IEC 61000-4-2) - exceeds Level 4 system-level ESD requirements for industrial and automotive end equipment. |
| Peak Pulse Power | 200 W (10/1000 μs) - sustains multiple ESD events without parametric shift; validated under 0.01 % duty cycle. |
| AEC-Q101 Qualified | Yes - qualified per stress test conditions including temperature cycling, HTRB, and mechanical shock; suitable for automotive front-end modules. |
Pinout & Package
SMF8V0A-HM3_A08 is housed in the DO-219AB (SMF) package - a low-profile, surface-mount case compatible with SOD-123W, SOD-123F, and SOD-123FL footprints. Dimensions: 3.9 mm × 1.9 mm × 1.08 mm (L × W × H), cathode marked by bar on top surface.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Input side of protected line (e.g., data line source) | Connected to signal trace upstream of protected IC; carries surge current toward cathode during clamping. |
| Cathode | Ground reference node | Connected to low-impedance chassis or system ground plane; provides return path for ESD current with minimal inductance. |
Key Features
| Feature | Design Value |
|---|---|
| Unidirectional clamping architecture | Enables asymmetric protection for DC-biased lines (e.g., USB D+, D−), preserving forward signal integrity while blocking negative transients. |
| Low-profile DO-219AB package | 1.08 mm height allows placement beneath connectors or in tight board-to-board interfaces without mechanical interference. |
| Wave and reflow solderable | Qualified for peak reflow temperatures up to 260 °C (J-STD-020); compatible with standard Pb-free assembly lines. |
| 706 pF capacitance at 0 V | Minimizes loading on 480 Mbps USB 2.0 differential pairs; maintains eye diagram compliance per USB-IF specifications. |
| AEC-Q101 qualification | Validates reliability for automotive applications including infotainment displays, body control modules, and ADAS sensor interfaces. |
Applications
| USB 2.0 Interface Protection | HDMI Data Line Protection |
|---|---|
Use Scenario: Protecting USB 2.0 D+ and D− lines in automotive head units against ESD events during cable insertion or handling. IC Role / Device Role / Timing Role: Unidirectional TVS diode placed directly at connector, clamping transients before they reach USB transceiver IC. Use Value: 706 pF capacitance avoids signal distortion at 480 Mbps; ±30 kV ESD rating ensures compliance with ISO 10605 for vehicle-level testing. |
Use Scenario: Safeguarding HDMI TMDS clock and data channels in industrial display controllers exposed to field service ESD. IC Role / Device Role / Timing Role: Standoff-rated clamp on each differential pair, referenced to clean digital ground to suppress common-mode surges. Use Value: 13.6 V clamping voltage stays below HDMI receiver absolute maximum ratings; DO-219AB footprint fits dense 0.5 mm pitch layouts. |
| Industrial Sensor I/O Protection | Automotive LIN Bus Node |
Use Scenario: Shielding analog and digital sensor outputs (e.g., pressure, temperature) in factory automation PLC modules from ESD coupling via long cables. IC Role / Device Role / Timing Role: Point-of-entry protection on 24 V or 5 V sensor lines, mounted adjacent to connector pins. Use Value: 8.0 V VRWM matches common sensor supply rails; 175 °C max junction temperature supports operation in hot enclosures. |
Use Scenario: Adding ESD resilience to LIN transceiver inputs in automotive door modules where harness routing increases exposure risk. IC Role / Device Role / Timing Role: Unidirectional clamp on LIN bus line, grounded to chassis to shunt transients away from transceiver's internal ESD structures. Use Value: AEC-Q101 qualification confirms suitability for automotive grade-2 environments; 14.7 A IPPM handles worst-case load dump-induced surges. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ8.0A | Higher clamping voltage (12.0 V @ 17.3 A), larger SMA package (4.5 mm × 2.7 mm), 1000 W peak power (8/20 μs). | Better suited for higher-energy surges (e.g., IEC 61000-4-5), but 1.5× larger footprint and 1050 pF capacitance limit high-speed use. | Select SMAJ8.0A only when 8/20 μs surge immunity is required and board space permits larger package. |
| TPD2E001DRYR | 2-channel, 15 pF per line, 5.5 V VRWM, integrated ESD array in 1.45 mm × 1.0 mm X2SON. | Optimized for ultra-high-speed interfaces (USB 3.0, MIPI), but lower standoff voltage and non-AEC-Q101 rated. | Choose TPD2E001DRYR for compact multi-line protection in consumer electronics; avoid in automotive or industrial settings requiring AEC-Q101. |
Compared with SMAJ8.0A and TPD2E001DRYR, SMF8V0A-HM3_A08 uniquely balances AEC-Q101 qualification, 706 pF capacitance, and DO-219AB miniaturization - making it the preferred choice for automotive-grade USB 2.0 and industrial sensor I/O where space, speed, and qualification are jointly constrained.
Availability
SMF8V0A-HM3_A08 is available at Aetrix Electronics and suitable for automotive infotainment systems, industrial PLC I/O modules, and high-reliability sensor interface designs requiring stable component supply across extended production lifecycles.
Supply support for SMF8V0A-HM3_A08 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Semiconductors is a global leader in discrete semiconductors, specializing in high-reliability diodes, MOSFETs, optoelectronics, and passive components for automotive, industrial, and computing markets.
The SMF series targets high-speed data line protection with AEC-Q101 qualification, low capacitance, and miniature packaging - engineered specifically for next-generation automotive infotainment, ADAS sensor hubs, and ruggedized industrial communication interfaces.
FAQ
What is the maximum clamping voltage of the SMF8V0A-HM3_A08 under standard IEC 61000-4-2 ESD conditions?
The SMF8V0A-HM3_A08 does not specify clamping voltage under IEC 61000-4-2 waveform (0.7–1 ns rise time); its 13.6 V clamping voltage is defined at 14.7 A using the 10/1000 μs waveform per IEC 61000-4-5. For ESD events, the device achieves <1 ns response and limits voltage to ≤13.6 V during 14.7 A surges - consistent with its role in protecting 12 V-tolerant receivers in the SMF8V0A-HM3_A08 application space.
Is SMF8V0A-HM3_A08 compatible with lead-free reflow soldering processes?
Yes, SMF8V0A-HM3_A08 is qualified for lead-free reflow soldering with a peak temperature of up to 260 °C, compliant with J-STD-020 moisture sensitivity level 1. The DO-219AB package withstands standard Pb-free thermal profiles without delamination or parametric shift - confirmed in Vishay's qualification report for the SMF8V0A-HM3_A08 family.
Does SMF8V0A-HM3_A08 meet AEC-Q101 requirements for automotive use?
Yes, SMF8V0A-HM3_A08 is AEC-Q101 qualified, having passed all required stress tests including HBM (>8 kV Class H3B), temperature cycling, high-temperature reverse bias, and mechanical shock. This qualification is explicitly stated in the Vishay SMF5V0A–SMF58A datasheet Rev. 2.4 for the SMF8V0A-HM3_A08 variant.
What is the typical junction capacitance of SMF8V0A-HM3_A08 at 0 V and 1 MHz?
The typical junction capacitance of SMF8V0A-HM3_A08 is 706 pF measured at 0 V reverse bias and 1 MHz frequency, as specified in the Electrical Characteristics table of the Vishay datasheet. This value is confirmed across production lots and supports design validation for USB 2.0 and RS-485 interfaces where capacitive loading must remain below 1 nF.
Can SMF8V0A-HM3_A08 be used in bidirectional signal lines like RS-485?
No, SMF8V0A-HM3_A08 is a unidirectional ESD protection diode and is not suitable for bidirectional lines without external biasing. For RS-485, a bidirectional TVS such as SMBJ8.0CA or dedicated arrays like SP1003-01UTG would be appropriate. The SMF8V0A-HM3_A08 datasheet specifies unidirectional operation only, with cathode-to-ground orientation required.
SMF8V0A-HM3_A08 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay
- Package/Case:
- DO-219AB
- Series:
- eSMP®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 8V
- Voltage - Breakdown (Min):
- 8.89V
- Voltage - Clamping (Max) @ Ipp:
- 13.6V
- Current - Peak Pulse (10/1000µs):
- 14.7A
- Power - Peak Pulse:
- 200W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- 706pF @ 1MHz
- Operating Temperature:
- -65°C ~ 175°C (TA)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-219AB (SMF)
SMF8V0A-HM3_A08 FAQ
1.How can I place an order for SMF8V0A-HM3_A08 through Aetrix?
Please submit a Request for Quotation (RFQ) for SMF8V0A-HM3_A08 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMF8V0A-HM3_A08 reliable?
The price and inventory of SMF8V0A-HM3_A08 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMF8V0A-HM3_A08 is usually 5 days.
3.What payment methods are accepted for SMF8V0A-HM3_A08?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMF8V0A-HM3_A08 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMF8V0A-HM3_A08?
SMF8V0A-HM3_A08 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMF8V0A-HM3_A08 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMF8V0A-HM3_A08?
For technical support, including SMF8V0A-HM3_A08 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMF8V0A-HM3_A08 requirements.
6.How does Aetrix verify that SMF8V0A-HM3_A08 is sourced from the original manufacturer or authorized distributors?
All SMF8V0A-HM3_A08 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMF8V0A-HM3_A08 meets industry standards.
7.What is the process for return or replacement of SMF8V0A-HM3_A08?
All SMF8V0A-HM3_A08 units undergo pre-shipment inspection (PSI). If there is an issue with SMF8V0A-HM3_A08, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMF8V0A-HM3_A08 part is unused and in its original packaging.
Return procedure for SMF8V0A-HM3_A08:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMF8V0A-HM3_A08 Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
