Infineon Technologies SN7002N E6327
- Part No.:
- SN7002N E6327
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
SN7002N E6327.pdf
- Description:
- MOSFET N-CH 60V 200MA SOT23-3
- Quantity:
- Payment:

- Shipping:

Inventory:6,030
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SN7002N E6327 from Infineon Technologies is an N-channel enhancement-mode logic-level SIPMOS™ small-signal MOSFET with 60 V VDS, 5 Ω RDS(on) (max @ VGS = 4.5 V), 0.2 A continuous drain current, and AEC-Q101 qualification for automotive use. It operates in switching applications requiring low gate drive voltage, high dv/dt immunity (6 kV/µs), and robust reverse diode recovery (trr = 14.2–21.3 ns).
For engineers reviewing the SN7002N E6327 datasheet, SN7002N E6327 pinout, SN7002N E6327 application, or SN7002N E6327 equivalent, key selection criteria include logic-level gate threshold (VGS(th) = 0.8–1.8 V), thermally constrained SOT-23 footprint (RthJA = 350 K/W), and integrated body diode performance under pulsed load conditions.
Technical Context
This discrete MOSFET uses silicon-based SIPMOS technology optimized for low-voltage logic-driven switching. Its enhancement-mode operation requires positive gate bias to conduct, and its dv/dt rating ensures reliable operation in inductive load environments without spurious turn-on.
The device features a monolithic structure with integrated body diode, characterized by VSD = 0.83–1.2 V at IF = IS, Qrr = 5.9–8.8 nC, and trr = 14.2–21.3 ns - enabling fast commutation in compact DC-DC and LED driver topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - maximum blocking voltage before avalanche breakdown; defines safe operating range in 24 V and 48 V systems |
| RDS(on) @ VGS = 4.5 V | 3.9–7.5 Ω - on-resistance at logic-level gate drive; determines conduction loss in low-power switching |
| ID (continuous) | 0.2 A @ TA = 25 °C - usable current limit under natural convection; derates to 0.16 A at 70 °C ambient |
| VGS(th) | 0.8–1.8 V - gate threshold range ensuring reliable turn-on with 3.3 V or 5 V microcontroller outputs |
| trr | 14.2–21.3 ns - reverse recovery time of integrated body diode; critical for minimizing switching loss in synchronous rectification |
| dv/dt rating | 6 kV/µs - immunity to false triggering during fast voltage transients in motor control or relay driving |
| Ptot | 0.36 W @ TA = 25 °C - thermal power limit in minimal SOT-23 footprint; requires careful PCB copper area planning |
Pinout & Package
SN7002N E6327 is housed in PG-SOT-23 (JEDEC TO-236AB) package - a surface-mount, 3-pin plastic case with standard 0.95 mm pitch and 2.9 mm × 1.3 mm footprint. Thermal resistance junction-to-ambient is 350 K/W at minimal PCB copper.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Gate) | Control input | Receives logic-level voltage to modulate channel conductivity; low input capacitance (Ciss = 34–45 pF) enables fast switching |
| Pin 2 (Source) | Reference node | Common return path for gate drive and load current; connects to ground or low-side reference in typical configurations |
| Pin 3 (Drain) | Power output | Switches high-side or low-side loads up to 60 V; carries pulsed current up to 0.8 A and supports integrated body diode conduction |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive compatibility | Operates fully enhanced with VGS ≥ 4.5 V - eliminates need for gate driver ICs in 3.3 V/5 V MCU-controlled circuits |
| AEC-Q101 qualified | Validated for automotive temperature range (−55 °C to +150 °C) and reliability stress tests - suitable for under-hood and infotainment modules |
| High dv/dt immunity | Rated 6 kV/µs - prevents parasitic turn-on in inductive switching (e.g., solenoid drivers, relay coils) |
| Integrated body diode | VSD = 0.83–1.2 V, trr = 14.2–21.3 ns - enables freewheeling in flyback and buck converters without external diode |
Applications
| Automotive LED Lighting Control | Low-Power DC-DC Synchronous Rectifier |
|---|---|
Use Scenario: Switching current to individual LED strings in headlamp or interior lighting modules with PWM dimming. IC Role / Device Role / Timing Role: Low-side switch controlled by automotive MCU GPIO; handles repetitive 0.2 A pulses at ≤100 kHz. Use Value: Logic-level VGS(th) ensures full enhancement at 3.3 V MCU output; AEC-Q101 qualification guarantees long-term reliability in vibration-prone environments. | Use Scenario: Replacing Schottky diode in 5 V → 3.3 V buck converter for portable infotainment subsystems. IC Role / Device Role / Timing Role: Synchronous rectifier with body diode conducting during dead-time and channel conducting during active phase. Use Value: RDS(on) < 5 Ω at 4.5 V reduces conduction loss vs. 0.3 V Schottky; trr < 22 ns minimizes shoot-through risk during transition. |
| Industrial Sensor Interface Protection | Smart Actuator Gate Driver Stage |
Use Scenario: Isolating and protecting analog sensor inputs (e.g., pressure, temp) from transient overvoltage events on 24 V supply rails. IC Role / Device Role / Timing Role: High-side protection switch placed between rail and sensor VDD; triggered only during fault detection. Use Value: 60 V VDS withstands ISO 7637-2 pulse 1/2a; dv/dt rating prevents false turn-on during fast transients. | Use Scenario: Driving gate of larger power MOSFET in valve or damper actuator control module using 5 V MCU output. IC Role / Device Role / Timing Role: Level-shifting buffer stage providing sufficient peak gate current (IG > 0.5 A pulsed) while isolating MCU. Use Value: Low Ciss (≤45 pF) and Qg (≤1.5 nC) enable fast, low-loss gate charging; SOT-23 allows dense layout near power stage. |
Availability
SN7002N E6327 is available at Aetrix Electronics and suitable for automotive LED control, low-power synchronous rectification, industrial sensor interface protection, and smart actuator gate driver stages requiring stable component supply across production lifecycles.
Supply support for SN7002N E6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.
The SIPMOS™ small-signal transistor product line delivers logic-compatible, AEC-Q101-qualified MOSFETs for space-constrained, high-reliability switching in automotive and industrial edge nodes.
FAQ
What is the maximum gate-source voltage rating for SN7002N E6327?
The absolute maximum gate-source voltage (VGS) is ±20 V. Exceeding this risks permanent gate oxide damage. For reliable operation, gate drive should be limited to 0–10 V in standard switching applications, with transient spikes clamped below ±15 V using Zener protection if needed.
Does SN7002N E6327 have a built-in body diode, and what are its key parameters?
Yes, it integrates a monolithic body diode rated for 0.2 A continuous forward current (IS) and 0.8 A pulsed (ISM). Key specs include forward voltage VSD = 0.83–1.2 V at IF = IS, reverse recovery time trr = 14.2–21.3 ns, and reverse recovery charge Qrr = 5.9–8.8 nC at Tj = 25 °C.
Can SN7002N E6327 be used in high-frequency switching applications above 1 MHz?
Its dynamic characteristics support operation up to ~5 MHz in low-duty-cycle, low-current (<0.1 A) applications. With Ciss = 34–45 pF, Qg = 1–1.5 nC, and tr/tf < 5 ns, it achieves fast transitions - but thermal limits (Ptot = 0.36 W) constrain sustained high-frequency use without heatsinking or derating.
Is SN7002N E6327 compatible with lead-free reflow soldering processes?
Yes, SN7002N E6327 is Pb-free and qualified for standard lead-free reflow per JEDEC J-STD-020. Peak temperature tolerance is 260 °C for 10 seconds, matching IPC/JEDEC Class 3 requirements. The PG-SOT-23 package is designed for compatibility with automated placement and reflow profiles.
SN7002N E6327 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- SIPMOS®
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 200mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 5Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id:
- 1.8V @ 26µA
- Gate Charge (Qg) (Max) @ Vgs:
- 1.5 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 45 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 360mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-SOT23
SN7002N E6327 FAQ
1.How can I place an order for SN7002N E6327 through Aetrix?
Please submit a Request for Quotation (RFQ) for SN7002N E6327 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SN7002N E6327 reliable?
The price and inventory of SN7002N E6327 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SN7002N E6327 is usually 5 days.
3.What payment methods are accepted for SN7002N E6327?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SN7002N E6327 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SN7002N E6327?
SN7002N E6327 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SN7002N E6327 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SN7002N E6327?
For technical support, including SN7002N E6327 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SN7002N E6327 requirements.
6.How does Aetrix verify that SN7002N E6327 is sourced from the original manufacturer or authorized distributors?
All SN7002N E6327 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SN7002N E6327 meets industry standards.
7.What is the process for return or replacement of SN7002N E6327?
All SN7002N E6327 units undergo pre-shipment inspection (PSI). If there is an issue with SN7002N E6327, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SN7002N E6327 part is unused and in its original packaging.
Return procedure for SN7002N E6327:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SN7002N E6327 Tags

-
BSZ180P03NS3EGATMA1
Infineon Technologies

-
SIRA14DP-T1-GE3
Vishay Siliconix

-
AO4419
Alpha & Omega Semiconductor Inc.

-
SISA14BDN-T1-GE3
Vishay Siliconix

-
PSMN9R5-30YLC,115
Nexperia USA Inc.

-
BUK9Y21-40E,115
Nexperia USA Inc.

-
RTQ035N03HZGTR
Rohm Semiconductor

-
FDMS7680
onsemi

-
RQ3E180BNTB
Rohm Semiconductor

-
STL6N2VH5
STMicroelectronics

-
DMPH4029LFGQ-7
Diodes Incorporated

-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…
Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…
Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …
Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.
Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…

