Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies SN7002N L6327

Part No.:
SN7002N L6327
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-236-3, SC-59, SOT-23-3
Datasheet:
AetrixSN7002N L6327.pdf
Description:
MOSFET N-CH 60V 200MA SOT23-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,723

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

SN7002N L6327 from Infineon Technologies is an N-channel enhancement-mode logic-level SIPMOS small-signal MOSFET in PG-SOT-23 package, rated for 60 V VDS, 5 Ω RDS(on) (max at VGS = 4.5 V), and 0.2 A continuous drain current. It features dv/dt ruggedness (6 kV/µs), AEC-Q101 qualification, and integrated body diode with 0.83–1.2 V forward voltage - used in low-power load switching and automotive LED control.

For engineers reviewing the SN7002N L6327 datasheet, SN7002N L6327 pinout, SN7002N L6327 application, or SN7002N L6327 equivalent, key selection criteria include logic-level gate drive compatibility (VGS(th) = 0.8–1.8 V), thermal resistance (RthJA = 350 K/W), and pulsed current capability (ID(puls) = 0.8 A).

Technical Context

This discrete MOSFET operates in enhancement mode with a threshold voltage range of 0.8–1.8 V, enabling direct interface with 3.3 V and 5 V logic controllers without level-shifting. Its dv/dt rating of 6 kV/µs ensures robustness against voltage transients in inductive switching environments.

The device integrates a monolithic body diode with reverse recovery time (trr) of 14.2–21.3 ns and Qrr of 5.9–8.8 nC, supporting fast-switching DC-DC and LED driver topologies where commutation losses must be minimized.

Key Specifications

ParameterValue and Actual Design Meaning
VDS max60 V - supports 24 V automotive and industrial bus systems with margin
RDS(on) @ VGS=4.5 V3.9–7.5 Ω - enables logic-level drive from microcontrollers and FPGA I/O
ID continuous0.2 A @ TA=25°C - suitable for low-current signal/load switching
Qg total1.0–1.5 nC - low gate charge reduces drive power and switching loss
trr14.2–21.3 ns - fast body diode recovery minimizes shoot-through risk in half-bridge use
RthJA350 K/W - requires minimal PCB copper area for thermal management
VGS(th)0.8–1.8 V - ensures reliable turn-on with standard 3.3 V logic outputs

Pinout & Package

Package: PG-SOT-23 (standard SOT-23 footprint, lead-free, tape-and-reel packaging per L6327 specification: 3000 pcs/reel).

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (Gate)Control inputReceives logic-level voltage to modulate channel conduction; high-impedance input requiring <10 nA leakage
Pin 2 (Source)Reference nodeCommon return path for drain current and gate drive reference; tied to system ground in low-side switch configuration
Pin 3 (Drain)Power outputSwitches load current to VDD; connects to inductive or resistive loads such as LEDs or sensors

Key Features

FeatureDesign Value
Logic-level gate driveVGS(th) ≤ 1.8 V - eliminates need for external gate driver in 3.3 V/5 V MCU applications
AEC-Q101 qualifiedQualified for automotive electronics - meets stress test requirements for temperature cycling, HTRB, and ESD (HBM <250 V)
dv/dt ruggedness6 kV/µs - prevents false turn-on during high-slew-rate transients in motor or solenoid drive
Integrated body diodeVSD = 0.83–1.2 V @ IS = 0.2 A - provides freewheeling path without external diode in flyback or buck configurations
Low RDS(on) × Qg product~3–5 Ω·nC - balances conduction and switching losses for efficiency in 100–500 kHz switching

Applications

Automotive LED Headlamp DimmingIndustrial Sensor Power Switching

Use Scenario: PWM-controlled dimming of 12 V automotive LED arrays with microcontroller output.

IC Role / Device Role / Timing Role: Low-side load switch controlling current path to LED string; driven by 3.3 V GPIO with 100–500 Hz PWM.

Use Value: Logic-level VGS(th) ensures full enhancement at 3.3 V; low RDS(on) limits self-heating under continuous 150 mA operation.

Use Scenario: Remote on/off control of 24 V analog sensor modules in PLC I/O racks.

IC Role / Device Role / Timing Role: Solid-state replacement for mechanical relays; switched by isolated digital output with 5 V logic.

Use Value: AEC-Q101 qualification ensures reliability in harsh industrial environments; dv/dt rating suppresses false triggering from nearby motor noise.

USB-Port Load SwitchIoT Node Battery Protection

Use Scenario: Inrush-limited power enable for USB-peripheral circuits in portable devices.

IC Role / Device Role / Timing Role: High-side or low-side switch placed between battery and USB VBUS rail; controlled by PMIC enable signal.

Use Value: Low Qg (1.0–1.5 nC) allows fast, low-loss turn-on; RDS(on) < 5 Ω keeps voltage drop below 100 mV at 20 mA.

Use Scenario: Secondary overcurrent protection for coin-cell–powered BLE sensor nodes.

IC Role / Device Role / Timing Role: Current-limiting switch in series with battery output; triggered by MCU upon fault detection.

Use Value: 0.2 A continuous rating matches typical IoT sleep/active current profiles; SOT-23 footprint saves board space in compact designs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
BSS138W-7-FVDS = 50 V, RDS(on) = 3.5 Ω @ 4.5 V, no AEC-Q101 qualificationLacks automotive qualification; lower voltage rating limits use in 24 V systemsSelect when cost sensitivity outweighs automotive compliance and 60 V margin is unnecessary
DMN2004K-7VDS = 20 V, RDS(on) = 2.8 Ω @ 4.5 V, higher ID = 0.6 ALower voltage rating restricts to 5–12 V logic rails; unsuitable for 24 V automotivePrefer for high-current, low-voltage consumer applications where gate drive is identical

Compared with BSS138W-7-F and DMN2004K-7, SN7002N L6327 uniquely combines 60 V rating, AEC-Q101 qualification, and logic-level drive in SOT-23 - making it the only option among the three validated for 12/24 V automotive load switching with transient immunity.

Availability

SN7002N L6327 is available at Aetrix Electronics and suitable for automotive lighting control, industrial sensor power management, and IoT battery protection requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for SN7002N L6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

The SIPMOS small-signal transistor product line delivers logic-compatible, rugged MOSFETs optimized for automotive and industrial load switching - emphasizing dv/dt immunity, AEC-Q101 compliance, and minimal gate drive requirements.

FAQ

Is SN7002N L6327 suitable for high-frequency PWM switching above 1 MHz?

No. With a typical gate charge of 1.0–1.5 nC and rise/fall times of 3.2–4.8 ns and 3.6–5.4 ns, SN7002N L6327 is optimized for switching up to ~500 kHz. Above 1 MHz, gate drive losses and layout parasitics dominate, and its RthJA of 350 K/W limits sustained high-duty-cycle operation.

Does SN7002N L6327 require a gate resistor in typical 3.3 V MCU drive applications?

A gate resistor (10–100 Ω) is recommended to damp ringing and limit peak gate current, even with 3.3 V drive. The device's low input capacitance (Ciss = 34–45 pF) makes it susceptible to oscillation without proper layout and minor series resistance, especially in noisy automotive environments.

Can SN7002N L6327 be used in high-side switch configurations?

Yes, but requires gate voltage ≥ VDS + VGS(th) (i.e., >61.8 V for full enhancement at 60 V drain). Since it lacks integrated charge pump or level shifter, external high-side driver circuitry is necessary - unlike dedicated high-side switches such as BTS7xx series.

What is the maximum allowable junction temperature during pulsed operation?

The absolute maximum junction temperature is 150°C, verified under pulsed conditions (ID(puls) = 0.8 A, duty cycle ≤ 1%, pulse width ≤ 100 µs). Thermal simulation using ZthJA curves confirms safe operation within this limit when PCB copper area meets minimum footprint guidelines per datasheet Figure 4.

SN7002N L6327 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
SIPMOS®
Package/Case:
TO-236-3, SC-59, SOT-23-3
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:
1.8V @ 26µA
Gate Charge (Qg) (Max) @ Vgs:
1.5 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
45 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
360mW (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-SOT23

SN7002N L6327 FAQ

1.How can I place an order for SN7002N L6327 through Aetrix?

Please submit a Request for Quotation (RFQ) for SN7002N L6327 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SN7002N L6327 reliable?

The price and inventory of SN7002N L6327 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SN7002N L6327 is usually 5 days.

3.What payment methods are accepted for SN7002N L6327?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SN7002N L6327 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SN7002N L6327?

SN7002N L6327 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SN7002N L6327 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SN7002N L6327?

For technical support, including SN7002N L6327 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SN7002N L6327 requirements.

6.How does Aetrix verify that SN7002N L6327 is sourced from the original manufacturer or authorized distributors?

All SN7002N L6327 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SN7002N L6327 meets industry standards.

7.What is the process for return or replacement of SN7002N L6327?

All SN7002N L6327 units undergo pre-shipment inspection (PSI). If there is an issue with SN7002N L6327, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SN7002N L6327 part is unused and in its original packaging.

Return procedure for SN7002N L6327:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SN7002N L6327 Tags

  • SN7002N L6327
  • SN7002N L6327 PDF
  • SN7002N L6327 Datasheet
  • SN7002N L6327 Specifications
  • SN7002N L6327 Images
  • Infineon Technologies
  • Infineon Technologies SN7002N L6327
  • Buy SN7002N L6327
  • SN7002N L6327 Price
  • SN7002N L6327 Distributor
  • SN7002N L6327 Supplier
  • SN7002N L6327 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER