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Texas Instruments SN75372DR

Part No.:
SN75372DR
Manufacturer:
Texas Instruments
Category:
Gate Drivers
Package:
8-SOIC (0.154", 3.90mm Width)
Datasheet:
AetrixSN75372DR.pdf
Description:
IC GATE DRVR LOW-SIDE 8SOIC
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:443

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Product details

Overview

SN75372DR from Texas Instruments is a dual high-speed MOSFET gate driver IC with totem-pole output stage, designed to interface TTL logic with power MOSFETs. It features dual independent drivers, 5 V TTL-compatible inputs (VIL = 0.8 V, VIH = 2 V), 24 V maximum output supply (VCC2), and 40 mA low-level output current per channel - enabling fast switching of high-capacitance MOSFET gates in motor control and power conversion circuits.

For engineers reviewing the SN75372DR datasheet, SN75372DR pinout, SN75372DR application, or SN75372DR equivalent, this page delivers verified electrical parameters, thermal derating data, load-capacitance-dependent propagation delays, real-world MOSFET drive waveforms, and validated alternative options for industrial gate-driving designs.

Technical Context

The SN75372DR implements two identical, non-inverting, dual-supply gate drivers with separate VCC1 (5 V) and VCC2 (up to 24 V) rails. Each channel uses a totem-pole output stage capable of sourcing up to −10 mA and sinking up to 40 mA, supporting fast charge/discharge of MOSFET input capacitance (Ciss) up to 4000 pF.

It operates across 0°C to 70°C ambient temperature, with propagation delays as low as 10 ns (tDHL) and transition times under 30 ns at 20 V VCC2, CL = 390 pF, and RD = 10 Ω - optimized for high-frequency PWM-driven power stages where gate drive strength and timing predictability are critical.

Key Specifications

Parameter Value and Actual Design Meaning
VCC1 Supply Range 4.75 V to 5.25 V - powers TTL-compatible input logic and internal level-shifting circuitry; requires stable 5 V rail.
VCC2 Output Supply Range 4.75 V to 24 V - sets gate drive voltage swing; enables direct drive of 12 V or 24 V MOSFET gates without external boost.
Low-Level Output Current (IOL) 40 mA per channel - sufficient to rapidly discharge large Ciss (e.g., IRF151: 4000 pF) for sub-microsecond turn-off.
Propagation Delay (tPHL) 10–50 ns - ensures precise timing alignment in synchronous buck or half-bridge topologies operating up to 500 kHz.
Power Dissipation (D package) 464 mW at 70°C - defines thermal limits when driving 1000 pF loads at 0.5 MHz (≈229 mW/channel).
Operating Temperature 0°C to 70°C - qualified for commercial/industrial ambient environments; not rated for extended automotive or military ranges.

Pinout & Package

SN75372DR is housed in an 8-pin SOIC (D) package, 3.91 mm wide, 1.75 mm max height, with 1.27 mm pitch. Pin 1 is located at the top-left corner (quadrant Q1) per JEDEC MS-012 AA.

Pin/Terminal Circuit Role Design Meaning
1A, 2A TTL-level input Accepts standard 5 V TTL logic signals; VIH ≥ 2 V, VIL ≤ 0.8 V; high noise immunity for noisy industrial environments.
E (Enable) Global enable control Active-high enable for both drivers; pulls outputs to high-impedance when low - supports PWM blanking and fault shutdown.
1Y, 2Y High-current totem-pole output Drives MOSFET gate directly; VOH ≈ VCC2−1.8 V, VOL ≈ 0.15 V @ 40 mA - minimizes conduction loss during switching transitions.
VCC1 Input logic supply 5 V rail powering input buffers and level shifters; decoupling required near pin to suppress TTL switching noise.
VCC2 Output driver supply Separate high-voltage rail (up to 24 V) powering output transistors; must be locally filtered to handle peak 500 mA pulsed currents.
GND Common reference Shared ground for both supplies; requires low-inductance connection to minimize ground bounce during high di/dt switching.

Key Features

Feature Design Value
Dual independent gate drivers Enables compact half-bridge or dual-MOSFET control without cross-talk; each channel has dedicated A-input and Y-output.
Separate VCC1/VCC2 supplies Isolates logic and power domains - prevents noise coupling from high-voltage switching into TTL input circuitry.
40 mA sink / −10 mA source capability Supports <100 ns rise/fall times on 1000 pF loads - critical for minimizing MOSFET switching losses in SMPS applications.
Low standby current (ICC2(S) = 0.5 mA) Reduces quiescent power in always-on systems; enables energy-efficient enable/disable sequencing in battery-backed controllers.
Thermal derating support (5.8 mW/°C) Allows accurate power budgeting in enclosed enclosures; D-package dissipation drops linearly from 725 mW @ 25°C to 464 mW @ 70°C.

Applications

Motor Control DC-DC Converters

Use Scenario: Driving high-side and low-side N-channel MOSFETs in a brushed DC motor H-bridge with 24 V bus and 4000 pF gate capacitance per FET.

IC Role / Device Role / Timing Role: Dual-channel gate driver providing matched, low-propagation-delay turn-on/turn-off control to prevent shoot-through and reduce conduction losses.

Use Value: Achieves <1.5 µs total switching time (tPLH + tPHL) at 20 V VCC2, enabling efficient 20 kHz PWM operation with minimal dead-time overhead.

Use Scenario: Gate driving synchronous rectifiers in a 48 V input, 12 V output isolated forward converter using IRF7470 MOSFETs (Ciss = 1800 pF).

IC Role / Device Role / Timing Role: Level-shifting driver translating 5 V controller PWM to 12 V gate drive while maintaining tight timing symmetry between channels.

Use Value: Delivers 40 mA sink current to ensure <100 ns fall time, reducing reverse recovery losses in secondary-side synchronous rectification.

Industrial PLC Outputs LED Driver Switching

Use Scenario: Controlling 24 V solenoid valves and relay coils via discrete N-MOSFET switches in programmable logic controller (PLC) output modules.

IC Role / Device Role / Timing Role: Robust interface between microcontroller GPIO and high-voltage, high-capacitance inductive loads - with integrated enable for safe I/O isolation.

Use Value: Withstands 24 V VCC2 and handles 500 mA peak output current (pulse), eliminating need for external driver transistors in Class 1 PLC outputs.

Use Scenario: Driving high-current LED strings (e.g., 3 A, 36 V) using external N-channel MOSFETs in constant-current buck LED drivers.

IC Role / Device Role / Timing Role: High-speed gate driver ensuring precise PWM dimming fidelity and minimizing MOSFET conduction losses during high-duty-cycle operation.

Use Value: Low VOL (0.15 V @ 40 mA) reduces gate drive power dissipation by >30% vs. open-collector alternatives - extending thermal margin in sealed LED fixtures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual MOSFET gate driver applications.

Alternative Part Technical Difference Application Difference Selection Advice
UCC27524ADR Single-supply (4.5–18 V), 5-A peak sink/source, 17 ns typical delay - higher drive strength but no VCC1/VCC2 separation. Requires level-shifting for 5 V logic control; better suited for high-frequency (>1 MHz) GaN/SiC drivers than legacy MOSFETs. Select UCC27524ADR when peak current >1 A and layout space allows single-rail simplification; avoid if strict 5 V TTL compatibility is mandatory.
TC4427ACOA 5 V–18 V supply, 1.2 A peak, dual non-inverting, no enable pin - lacks global enable and separate logic supply. Higher peak current supports faster switching of ultra-low-Qg MOSFETs; unsuitable for systems requiring coordinated shutdown via enable signal. Choose TC4427ACOA for cost-sensitive, high-current discrete MOSFET drives where enable functionality is implemented externally.

Compared with SN75372DR, UCC27524ADR offers superior speed and current but sacrifices TTL input compatibility and dual-supply isolation; TC4427ACOA provides higher peak drive at lower cost but removes the critical enable function needed for safety-critical industrial I/O.

Availability

SN75372DR is available at Aetrix Electronics and suitable for motor control, DC-DC converter design, and industrial PLC output modules requiring stable component supply, long-lifecycle support, and guaranteed traceable sourcing.

Supply support for SN75372DR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and power management technologies, with over 50 years of innovation in industrial and automotive electronics.

The SN75372DR belongs to TI's legacy power interface product line, engineered specifically for robust, cost-effective TTL-to-MOSFET translation in commercial-grade industrial power systems - emphasizing reliability, thermal stability, and ease of integration.

FAQ

What is the maximum capacitive load the SN75372DR can drive reliably?

The SN75372DR is characterized for loads up to 4000 pF (e.g., IRF151) with measurable performance degradation beyond that. At 2000 pF and 0.5 MHz, average power per channel reaches 229 mW - within the D-package 464 mW limit at 70°C. For sustained operation above 2000 pF, thermal derating and PCB copper area must be carefully evaluated per Figure 5 in the SLLS025A datasheet. The SN75372DR does not specify safe operating area (SOA) curves, so peak current should remain below 500 mA.

Can the SN75372DR drive both high-side and low-side N-channel MOSFETs in a half-bridge?

Yes, the SN75372DR can drive both high-side and low-side N-channel MOSFETs - but only in bootstrap or floating supply configurations. Its outputs are ground-referenced, so high-side drive requires a floating VCC2 rail referenced to the MOSFET source. The SN75372DR itself does not integrate high-side level shifting; it relies on external bootstrap diodes/capacitors or isolated supplies. The SN75372DR's dual independent channels simplify control logic routing in such topologies.

Does the SN75372DR support 3.3 V logic inputs?

No - the SN75372DR is specified only for TTL-compatible inputs: VIL ≤ 0.8 V and VIH ≥ 2.0 V at VCC1 = 5 V. A 3.3 V logic high (typically 3.3 V) exceeds the absolute maximum input voltage of 5.5 V but falls outside the guaranteed switching threshold range. TI does not characterize or guarantee operation with 3.3 V CMOS logic levels; interfacing requires a level shifter or resistor divider to ensure VIH ≥ 2.0 V and VIL ≤ 0.8 V. The SN75372DR datasheet explicitly references TTL input thresholds only.

What is the purpose of the Enable (E) pin on the SN75372DR?

The Enable (E) pin is an active-high, global control input that simultaneously disables both driver outputs when pulled low. When E = low, outputs enter high-impedance state - effectively disconnecting the drivers from the MOSFET gates. This feature enables safe PWM blanking during fault conditions, startup sequencing, or power-down modes. The SN75372DR draws only 0.5 mA from VCC2 in standby (E = low), making it suitable for low-power supervision circuits. The E pin is TTL-compatible and shares the same input thresholds as the A inputs.

How does the SN75372DR compare to the SN75447 in terms of MOSFET drive performance?

The SN75372DR replaces the older SN75447 with significantly improved speed and drive strength: tPHL is reduced from ~120 ns to 10–50 ns, and IOL increases from 20 mA to 40 mA. Figure 13 in the SLLS025A datasheet directly compares both devices driving an IRF151 - showing the SN75372DR achieves ~3× faster gate voltage transitions. Unlike the SN75447, the SN75372DR uses true totem-pole outputs instead of open-collector with pull-up resistors, eliminating RC time constants and enabling deterministic high-frequency operation. The SN75372DR also adds separate VCC1/VCC2 rails for enhanced noise immunity.

SN75372DR Specifications

Product attributes
Attribute value
Manufacturer:
Texas Instruments
Series:
-
Package/Case:
8-SOIC (0.154", 3.90mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Active
Programmable:
Not Verified
Driven Configuration:
Low-Side
Channel Type:
Synchronous
Number of Drivers:
2
Gate Type:
N-Channel MOSFET
Voltage - Supply:
4.75V ~ 5.25V, 4.75V ~ 24V
Logic Voltage - VIL, VIH:
0.8V, 2V
Current - Peak Output (Source, Sink):
500mA, 500mA
Input Type:
Inverting
High Side Voltage - Max (Bootstrap):
-
Rise / Fall Time (Typ):
20ns, 20ns
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-SOIC

SN75372DR FAQ

1.How can I place an order for SN75372DR through Aetrix?

Please submit a Request for Quotation (RFQ) for SN75372DR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SN75372DR reliable?

The price and inventory of SN75372DR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SN75372DR is usually 5 days.

3.What payment methods are accepted for SN75372DR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SN75372DR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SN75372DR?

SN75372DR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SN75372DR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SN75372DR?

For technical support, including SN75372DR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SN75372DR requirements.

6.How does Aetrix verify that SN75372DR is sourced from the original manufacturer or authorized distributors?

All SN75372DR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SN75372DR meets industry standards.

7.What is the process for return or replacement of SN75372DR?

All SN75372DR units undergo pre-shipment inspection (PSI). If there is an issue with SN75372DR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SN75372DR part is unused and in its original packaging.

Return procedure for SN75372DR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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