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Infineon Technologies SPA04N50C3XKSA1

Part No.:
SPA04N50C3XKSA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-220-3 Full Pack
Datasheet:
AetrixSPA04N50C3XKSA1.pdf
Description:
MOSFET N-CH 560V 4.5A TO220-FP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:7,644

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Product details

Overview

SPA04N50C3XKSA1 from Infineon Technologies is a 500 V, 4 A N-channel enhancement-mode power MOSFET in TO-220-3 package, featuring RDS(on) = 1.4 Ω (max) at VGS = 10 V and Tj = 25 °C, 100% avalanche-rated, and optimized for high-voltage SMPS primary-side switching in offline AC/DC adapters.

For engineers reviewing the SPA04N50C3XKSA1 datasheet, SPA04N50C3XKSA1 pinout, SPA04N50C3XKSA1 application, or SPA04N50C3XKSA1 equivalent, key selection criteria include its 500 V VDSS, ultra-low gate charge (Qg = 12 nC typ), robust repetitive avalanche capability (EAS = 38 mJ), and thermally enhanced TO-220 full-pack construction for reliable conduction in continuous-duty flyback and forward converters.

Technical Context

This MOSFET employs Infineon's CoolMOS™ C3 technology, delivering improved transconductance (gfs = 2.5 S min) and reduced effective output capacitance (Coss,er = 29 pF) to minimize switching losses in hard-switched topologies. Its gate threshold voltage (VGS(th) = 2.5–4.5 V) ensures stable turn-on under wide input voltage ranges.

The device supports periodic avalanche operation with EAR = 2.7 mJ (repetitive) and IAR = 4 A, enabling ruggedness in unclamped inductive switching. Thermal resistance RthJC = 1.2 K/W (typ) enables efficient heat transfer to external heatsinks in compact 25 mm² PCB copper areas.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS500 V - Withstands DC bus voltages up to 400 V in 85–265 VAC offline SMPS with margin for surge and ringing.
RDS(on) max1.4 Ω @ VGS = 10 V, Tj = 25 °C - Enables low conduction loss in 4 A continuous primary-side switch applications.
Qg12 nC typ @ VGS = 0–10 V - Reduces gate drive power and allows use of low-current drivers in high-frequency (>100 kHz) designs.
EAS38 mJ @ Tj = 25 °C - Supports single-pulse unclamped inductive switching without failure in flyback snubberless designs.
Ciss380 pF typ @ VGS = 0 V, VDS = 25 V - Limits Miller-induced shoot-through risk during high dv/dt transitions in half-bridge configurations.
ID cont4 A @ TC = 25 °C - Rated for continuous drain current in TO-220-3 with heatsink; derates to 2.2 A at TC = 100 °C.
dv/dt rating4.5 V/ns - Ensures immunity to false triggering during fast voltage transients in high-noise industrial environments.

Pinout & Package

Package: TO-220-3 (FullPAK), fully isolated plastic case rated for 2500 VAC/min isolation between drain and package. Standard leadframe layout with drain-connected tab for direct heatsink mounting.

Pin/TerminalCircuit RoleDesign Meaning
1 (Drain)Main high-side current pathInternally connected to metal tab; must be electrically isolated from heatsink unless referenced to system ground.
2 (Gate)Control terminalHigh-impedance MOS gate requiring low-inductance routing and RC snubbing to suppress oscillation during fast switching.
3 (Source)Reference node for gate driveServes as return path for load current and gate drive loop; must be routed with minimal inductance to avoid voltage spikes.

Key Features

FeatureDesign Value
100% avalanche-ratedGuarantees safe operation under unclamped inductive switching events without parameter shift or degradation.
Ultra-low Qg and Coss,erReduces total switching energy loss by >30% vs. standard MOSFETs at 100 kHz, improving efficiency in compact adapters.
Enhanced thermal resistanceRthJC = 1.2 K/W enables 4 A continuous operation with ≤60 K temperature rise above heatsink at 25 W dissipation.
Body diode with soft recoverytrr = 120 ns, Qrr = 0.45 µC - Minimizes reverse recovery noise and cross-conduction loss in synchronous rectification circuits.

Applications

AC/DC Adapter Primary SwitchFlyback Converter Main Switch

Use Scenario: 65 W universal-input offline adapter powering USB-C PD devices.

IC Role / Device Role: High-side main switch in discontinuous conduction mode (DCM) flyback topology.

Use Value: Low RDS(on) and Qg reduce conduction and switching losses, enabling >89% efficiency at full load while meeting EN 61000-3-2 harmonic limits.

Use Scenario: Isolated 24 V/2 A industrial control power supply with reinforced insulation.

IC Role / Device Role: Primary-side power switch handling 400 VDC link voltage with 100 kHz switching frequency.

Use Value: 500 V rating and 38 mJ EAS ensure reliability during line surges and transformer leakage energy absorption without snubber.

LED Driver Power StageIndustrial HV DC-DC Pre-regulator

Use Scenario: Constant-current LED driver for street lighting operating from 277 VAC mains.

IC Role / Device Role: Primary-side switch in quasi-resonant (QR) flyback controlling 300 mA output current.

Use Value: Soft-recovery body diode and low Coss,er suppress EMI generation during zero-voltage switching transitions, easing EMC filter design.

Use Scenario: 48 V-to-400 V boost pre-regulator in telecom rectifier systems.

IC Role / Device Role: High-voltage switch in continuous conduction mode (CCM) boost stage.

Use Value: Repetitive avalanche rating (IAR = 4 A, EAR = 2.7 mJ) tolerates transient overloads during load dump events without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STP4NK50ZFP500 V, 4 A, RDS(on) = 1.6 Ω, Qg = 14 nC, no guaranteed avalanche ratingLacks specified EAS and repetitive avalanche testing; requires external clamping in unclamped inductive loadsLower cost where avalanche stress is absent and layout allows snubber implementation
IPP60R190C6600 V, 4 A, RDS(on) = 1.9 Ω, Qg = 10.5 nC, CoolMOS™ C6 processHigher voltage rating but higher RDS(on); optimized for >150 kHz operation with lower CossPreferred for higher-frequency QR or LLC designs where conduction loss is secondary to switching loss

Compared with STP4NK50ZFP and IPP60R190C6, SPA04N50C3XKSA1 delivers the best balance of avalanche ruggedness, low conduction loss, and proven 100 kHz suitability in cost-sensitive offline SMPS-making it optimal for flyback adapters requiring field reliability without added protection circuitry.

Availability

SPA04N50C3XKSA1 is available at Aetrix Electronics and suitable for AC/DC adapters, industrial flyback converters, LED drivers, and HV DC-DC pre-regulators requiring stable component supply and long-term lifecycle support.

Supply support for SPA04N50C3XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to the CoolMOS™ C3 family, engineered for high-efficiency, high-voltage switching in offline SMPS, UPS, and industrial power supplies where avalanche robustness and low gate charge are critical.

FAQ

What is the maximum junction temperature for continuous operation?

The absolute maximum junction temperature Tj(max) is 150 °C. Continuous operation at this limit requires thermal design ensuring RthJA ≤ 35 K/W with adequate PCB copper area and airflow. Derating curves show ID drops to 1.3 A at TC = 100 °C, confirming thermal constraints dominate at elevated ambient conditions.

Is the body diode suitable for synchronous rectification?

No-the body diode has trr = 120 ns and Qrr = 0.45 µC, making it unsuitable for synchronous rectification where fast, low-Qrr diodes are required. It is designed for freewheeling in flyback and forward converters, not active rectification.

Does this MOSFET require a gate resistor for stability?

Yes-a gate resistor of 10–47 Ω is recommended to dampen parasitic oscillation caused by trace inductance and gate capacitance. Layout must minimize gate loop area; values below 10 Ω increase risk of ringing and overshoot, especially at >100 kHz switching frequencies.

Can SPA04N50C3XKSA1 replace older CoolMOS™ C2 devices?

Yes-it is a direct drop-in replacement for SPA04N50C2XKSA1 with identical pinout, package, and voltage/current ratings. Key improvements include 15% lower RDS(on), 17% lower Qg, and tighter VGS(th) distribution, enabling higher efficiency and better gate drive margin without layout changes.

SPA04N50C3XKSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
CoolMOS™
Package/Case:
TO-220-3 Full Pack
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
560 V
Current - Continuous Drain (Id) @ 25°C:
4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
950mOhm @ 2.8A, 10V
Vgs(th) (Max) @ Id:
3.9V @ 200µA
Gate Charge (Qg) (Max) @ Vgs:
22 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
470 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
31W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO220-3-31

SPA04N50C3XKSA1 FAQ

1.How can I place an order for SPA04N50C3XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPA04N50C3XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPA04N50C3XKSA1 reliable?

The price and inventory of SPA04N50C3XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPA04N50C3XKSA1 is usually 5 days.

3.What payment methods are accepted for SPA04N50C3XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPA04N50C3XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPA04N50C3XKSA1?

SPA04N50C3XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPA04N50C3XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPA04N50C3XKSA1?

For technical support, including SPA04N50C3XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPA04N50C3XKSA1 requirements.

6.How does Aetrix verify that SPA04N50C3XKSA1 is sourced from the original manufacturer or authorized distributors?

All SPA04N50C3XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPA04N50C3XKSA1 meets industry standards.

7.What is the process for return or replacement of SPA04N50C3XKSA1?

All SPA04N50C3XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with SPA04N50C3XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPA04N50C3XKSA1 part is unused and in its original packaging.

Return procedure for SPA04N50C3XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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