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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPA04N80C3XKSA1

Name: SPA04N80C3XKSA1
Brand: Infineon Technologies
SKU: SPA04N80C3XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPA04N80C3XKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: SPA04N80C3XKSA1.pdf

Description:: MOSFET N-CH 800V 4A TO220-FP

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Inventory:6,895

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Product details

Overview

SPA04N80C3 from Infineon Technologies is an 800 V, 4 A CoolMOS™ C3 superjunction power MOSFET in PG-TO220-3 package, featuring 1.3 Ω R_DS(on) at 25 °C, 23 nC typical gate charge, and 2500 V_AC isolation rating. It serves as a high-voltage switching device in active-clamp forward converters for industrial DC-bus applications.

For engineers reviewing the SPA04N80C3 datasheet, SPA04N80C3 pinout, SPA04N80C3 application, or SPA04N80C3 equivalent, key selection criteria include avalanche ruggedness (170 mJ single-pulse), dv/dt immunity (50 V/ns), thermal resistance (4 K/W junction-to-case), and JEDEC-qualified reliability for high-stress industrial power conversion.

Technical Context

This 800 V superjunction MOSFET employs charge-compensation cell structure to minimize R_DS(on) × Q_g figure-of-merit. Its ultra-low output capacitance (C_oss = 25 pF) and energy-related effective capacitance (C_o(er) = 19 pF) reduce switching losses in hard-switched topologies.

The device integrates a fast-recovery body diode with t_rr = 520 ns and Q_rr = 4 µC, enabling robust operation in synchronous rectification and resonant circuits where reverse recovery behavior critically impacts efficiency and EMI.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	800 V - supports DC-link voltages up to 640 V with margin for transients in industrial SMPS
R_DS(on) max @ 25 °C	1.3 Ω - enables low conduction loss at 4 A continuous drain current
Q_g typ	23 nC - reduces gate drive power and allows use with standard 1-A peak drivers
E_AS	170 mJ - withstands single-pulse avalanche stress without failure in clamp or snubber circuits
dv/dt ruggedness	50 V/ns - suppresses false turn-on during high-slew-rate switching in high-noise environments
R_thJC	4 K/W - enables 38 W power dissipation at T_C = 25 °C with minimal heatsink requirement
C_oss	25 pF - lowers capacitive turn-off loss and improves ZVS capability in resonant converters

Pinout & Package

Package: PG-TO220-3 (isolated tab, 2500 V_AC/1 min). Pin 1: Gate; Pin 2: Drain (tab); Pin 3: Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control electrode	Receives 10 V logic-level drive to fully enhance channel; low Q_gs + Q_gd minimizes Miller-induced oscillation risk
Pin 2 (Drain)	High-voltage power terminal	Internally connected to electrically isolated metal tab; rated for 2500 V_AC isolation from heatsink
Pin 3 (Source)	Reference node for gate drive	Serves as return path for gate current and load current; defines local ground for driver IC placement

Key Features

Feature	Design Value
Ultra-low gate charge	23 nC total gate charge enables efficient 100–500 kHz switching with minimal driver loss
Extreme dv/dt rating	50 V/ns immunity prevents spurious turn-on during fast voltage transitions in high-side configurations
JEDEC-qualified reliability	Qualified per J-STD-20 and JESD22 for industrial temperature cycling and humidity exposure
Isolated TO-220 package	2500 V_AC isolation eliminates need for insulating washer in heatsink mounting
Low effective output capacitance	C_o(er) = 19 pF reduces stored energy loss during turn-off, improving light-load efficiency

Applications

Industrial SMPS

Active-Clamp Forward Converters

Use Scenario: 400–640 V DC input offline power supply delivering 100–500 W in factory automation controllers.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch operating at 100–200 kHz with active-clamp reset.

Use Value: Low R_DS(on) and C_oss reduce conduction and switching losses; avalanche rating handles clamp energy without external snubbers.

Use Scenario: Isolated DC-DC converter in telecom rectifiers with tight regulation and high efficiency targets.

IC Role / Device Role / Timing Role: Main switching transistor in active-clamp forward topology, synchronized to primary controller timing.

Use Value: 50 V/ns dv/dt ruggedness ensures stable operation under high di/dt conditions; isolated package simplifies thermal design.

UPS Systems

Motor Drive Inverters

Use Scenario: Battery-backed online UPS with bidirectional AC/DC and DC/AC stages handling 3 kVA loads.

IC Role / Device Role / Timing Role: High-side switch in PFC boost stage and inverter leg, subject to repetitive avalanche stress.

Use Value: E_AR = 4 mJ and I_AR = 4 A support reliable repetitive avalanche operation during overload or short-circuit events.

Use Scenario: Low-power industrial servo drives (<1 kW) requiring compact, thermally efficient power stage.

IC Role / Device Role / Timing Role: Half-bridge switch in three-phase inverter output stage, driven by isolated gate drivers.

Use Value: 4 K/W R_thJC allows direct mounting to shared heatsink; fast body diode (t_rr = 520 ns) reduces shoot-through risk during commutation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP4NK80ZFP	800 V, 3.7 A, R_DS(on) = 1.6 Ω, Q_g = 27 nC, non-isolated TO-220FP	Lacks 2500 V_AC isolation; higher R_DS(on) increases conduction loss at 4 A	Select when isolation not required and cost sensitivity outweighs thermal performance
IPP60R190C7	600 V, 4.5 A, R_DS(on) = 0.19 Ω, Q_g = 22 nC, CoolMOS™ C7, TO-220	Lower voltage rating limits use to ≤400 V DC-bus; superior R_DS(on) but unsuitable for 640 V systems	Prefer only in 400 V-class designs where lower on-resistance justifies reduced voltage margin

Compared with STP4NK80ZFP and IPP60R190C7, the SPA04N80C3 uniquely combines 800 V rating, isolated package, and optimized R_DS(on)/Q_g trade-off for industrial 640 V DC-bus applications where safety isolation and avalanche robustness are mandatory.

Availability

SPA04N80C3 is available at Aetrix Electronics and suitable for industrial SMPS, active-clamp forward converters, UPS systems, and motor drive inverters requiring stable component supply and long-term lifecycle assurance.

Supply support for SPA04N80C3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The CoolMOS™ C3 product line delivers high-voltage superjunction MOSFETs optimized for industrial switched-mode power supplies, focusing on avalanche ruggedness, dv/dt immunity, and thermal efficiency at 600–800 V ratings.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The SPA04N80C3 supports 2.5 A continuous drain current at T_C = 100 °C, derated from 4 A at 25 °C per its safe operating area curve. This limit ensures junction temperature remains below 150 °C under steady-state conduction, accounting for R_DS(on) increase with temperature and thermal resistance of 4 K/W.

Does the device require a heatsink for 38 W power dissipation?

Yes - at 38 W power dissipation (maximum rated P_tot at T_C = 25 °C), the junction-to-case thermal resistance of 4 K/W requires a heatsink capable of maintaining case temperature at or below 25 °C. Without forced air or large copper area, junction temperature would exceed 150 °C even at moderate ambient.

Can the body diode be used for synchronous rectification?

The integrated body diode has t_rr = 520 ns and Q_rr = 4 µC at 4 A, making it usable in low-frequency synchronous rectification (≤100 kHz), but not recommended for high-frequency ZVS/ZCS topologies where faster recovery is critical. External Schottky diodes are preferred above 200 kHz.

Is the PG-TO220-3 package lead-free and RoHS compliant?

Yes - the SPA04N80C3 uses Pb-free lead plating and complies with RoHS Directive 2011/65/EU. The device is qualified per J-STD-20 for moisture sensitivity level (MSL) 1 and undergoes wave soldering only at leads (260 °C for 10 s at 1.6 mm from case), preserving internal die integrity.

SPA04N80C3XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.3Ohm @ 2.5A, 10V

Vgs(th) (Max) @ Id:: 3.9V @ 240µA

Gate Charge (Qg) (Max) @ Vgs:: 31 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 570 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 38W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-31

SPA04N80C3XKSA1 FAQ

1.How can I place an order for SPA04N80C3XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPA04N80C3XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPA04N80C3XKSA1 reliable?

The price and inventory of SPA04N80C3XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPA04N80C3XKSA1 is usually 5 days.

3.What payment methods are accepted for SPA04N80C3XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPA04N80C3XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPA04N80C3XKSA1?

SPA04N80C3XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPA04N80C3XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPA04N80C3XKSA1?

For technical support, including SPA04N80C3XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPA04N80C3XKSA1 requirements.

6.How does Aetrix verify that SPA04N80C3XKSA1 is sourced from the original manufacturer or authorized distributors?

All SPA04N80C3XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPA04N80C3XKSA1 meets industry standards.

7.What is the process for return or replacement of SPA04N80C3XKSA1?

All SPA04N80C3XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with SPA04N80C3XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPA04N80C3XKSA1 part is unused and in its original packaging.

Return procedure for SPA04N80C3XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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