Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPA07N60C2

Name: SPA07N60C2
Brand: Infineon Technologies
SKU: SPA07N60C2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SPA07N60C2

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: SPA07N60C2.pdf

Description:: N-CHANNEL POWER MOSFET

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:1,403

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SPA07N60C2 from Infineon Technologies is a 650 V, 7.3 A CoolMOS™ C2-series N-channel power MOSFET in TO-220-3-31 package, featuring ultra-low gate charge (27 nC), low R_DS(on) (0.6 Ω @ 10 V, 25 °C), and periodic avalanche rating-designed for high-efficiency SMPS, PFC stages, and industrial AC-DC converters.

For engineers reviewing the SPA07N60C2 datasheet, SPA07N60C2 pinout, SPA07N60C2 application, or SPA07N60C2 equivalent, key selection criteria include its 600 V V_(BR)DSS, 230 mJ single-pulse avalanche energy, 970 pF input capacitance, and thermal resistance of 1.5 K/W (junction-to-case), critical for hard-switched flyback and resonant LLC designs.

Technical Context

This device implements Infineon's second-generation CoolMOS™ superjunction technology, enabling reduced conduction and switching losses via optimized cell pitch and charge compensation. Its gate plateau voltage of 8 V ensures robust drive margin under varying load conditions.

The MOSFET supports high dv/dt immunity (6 V/ns) and reverse diode recovery with t_rr = 750–1275 ns and Q_rr = 4.9 µC, making it suitable for discontinuous conduction mode (DCM) and transition-mode (TM) PFC controllers where body diode performance impacts efficiency and EMI.

Key Specifications

Parameter	Value and Actual Design Meaning
V_(BR)DSS	600 V - Withstands 600 V drain-source breakdown at 0.25 mA, enabling use in 400 V DC bus applications with 50 % safety margin.
R_DS(on)	0.6 Ω max @ 10 V, 25 °C - Delivers low conduction loss in 7.3 A continuous operation; rises to ~2.8 Ω at 150 °C per curve on Page 10.
Q_g	27–35 nC - Enables fast, low-loss switching with standard gate drivers; reduces gate drive power and EMI generation.
E_AS	230 mJ - Supports reliable single-pulse avalanche operation during transient overvoltage events without failure.
C_iss	970 pF - Low input capacitance minimizes Miller effect and improves turn-on speed in high-frequency topologies.
t_r/t_f	33 ns / 9–13.5 ns - Fast switching transitions reduce overlap loss and support >100 kHz operation in resonant converters.
R_thJC	1.5 K/W - Enables effective heat transfer to heatsink; allows 83 W dissipation at T_C = 25 °C before derating.

Pinout & Package

SPA07N60C2 is housed in a P-TO220-3-31 package: insulated tab, vertical lead orientation, 3-pin through-hole configuration with standard mounting hole. The case is electrically connected to the drain terminal.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Left)	Gate (G)	High-impedance control input; requires ≤±20 V drive; sensitive to ESD; connects to PWM controller output.
Pin 2 (Middle)	Drain (D)	Main high-voltage current path; tied to heatsink via insulated mounting; carries full switched current and voltage stress.
Pin 3 (Right)	Source (S)	Power return reference; forms common node with driver ground; used for current sensing and feedback loop referencing.

Key Features

Feature	Design Value
Ultra-low gate charge	Q_g = 27–35 nC enables efficient 100–300 kHz switching with minimal gate drive loss and simplified driver design.
Periodic avalanche rated	Repetitive avalanche capability (I_AR = 7.3 A, E_AR = 0.5 mJ) supports rugged operation in unclamped inductive switching.
Extreme dv/dt immunity	6 V/ns rating prevents false turn-on in high-noise environments such as motor drives and industrial inverters.
Low effective output capacitance	Co(er) = 30 pF and Co(tr) = 55 pF reduce switching loss and improve zero-voltage switching (ZVS) margin in LLC designs.
Body diode with low Q_rr	Q_rr = 4.9 µC and t_rr = 750–1275 ns minimize commutation loss and EMI in TM-PFC and synchronous rectification.

Applications

Server Power Supply

Industrial Motor Drive

Use Scenario: Primary-side switch in 80+ Titanium-certified 1 kW server PSU using LLC resonant topology.

IC Role / Device Role / Timing Role: High-side main switch operating at 200–300 kHz with ZVS; handles 400 V DC input and delivers regulated 12 V/48 V outputs.

Use Value: Low C_iss and Q_g reduce dead-time loss and gate drive power; 1.5 K/W R_thJC maintains junction temperature below 125 °C under full load.

Use Scenario: Inverter leg switch in 3-phase 7.5 kW variable frequency drive for HVAC compressors.

IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in 6–16 kHz PWM inverter stage; operates with 600 V DC link and 100 A peak phase current.

Use Value: Avalanche rating and 6 V/ns dv/dt immunity prevent shoot-through and false triggering during fast bus transients and motor regeneration.

Telecom Rectifier

EV Charging Onboard PFC

Use Scenario: Boost switch in 3.3 kW telecom rectifier with active clamp forward and interleaved PFC front-end.

IC Role / Device Role / Timing Role: Critical PFC switch in continuous conduction mode (CCM); switches at 65–100 kHz with 380 V DC output.

Use Value: Low R_DS(on) (0.6 Ω) and low Q_rr reduce conduction and recovery losses, achieving >96.5 % system efficiency at full load.

Use Scenario: Active PFC switch in 6.6 kW OBC (onboard charger) for Level 2 EV charging.

IC Role / Device Role / Timing Role: Transition-mode (TM) boost switch handling 240 V AC input, delivering 400 V DC bus with <3 % THD.

Use Value: Ultra-low gate charge enables direct drive from low-power MCU-based PFC controllers; periodic avalanche rating accommodates grid surge events per IEC 61000-4-5.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP7NK60ZFP	600 V, 6.5 A, R_DS(on) = 0.75 Ω, Q_g = 35 nC, TO-220FP package (shorter leads, lower L_GD)	Higher R_DS(on) increases conduction loss; lower thermal mass limits peak power handling	Preferable for space-constrained layouts needing lower parasitic inductance; less suitable for sustained 7 A operation.
IPP60R099C6	600 V, 50 A, R_DS(on) = 0.099 Ω, Q_g = 72 nC, TO-220 package, CoolMOS™ C6 generation	Lower R_DS(on) but higher Q_g; requires stronger gate driver; higher cost	Optimal for high-current, low-loss designs where gate drive capability and budget allow; over-specified for 7 A applications.

Compared with STP7NK60ZFP and IPP60R099C6, SPA07N60C2 offers the best balance of low gate charge, moderate current rating, and proven avalanche ruggedness-making it ideal for cost-sensitive, thermally constrained 7–10 A SMPS designs requiring reliability across wide temperature and line-voltage ranges.

Availability

SPA07N60C2 is available at Aetrix Electronics and suitable for server power supplies, industrial motor drives, telecom rectifiers, and EV onboard chargers requiring stable component supply and long-term manufacturing continuity.

Supply support for SPA07N60C2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global R&D and wafer fabrication infrastructure.

The CoolMOS™ C2 product line was engineered specifically for high-efficiency, high-reliability AC-DC conversion in enterprise and industrial power systems-emphasizing low switching loss, avalanche robustness, and thermal stability over extended lifetimes.

FAQ

What is the maximum continuous drain current for SPA07N60C2 at 100 °C case temperature?

The maximum continuous drain current is 4.6 A at T_C = 100 °C, as specified in the "Maximum Ratings" table on Page 1. This value accounts for thermal derating due to junction-to-case thermal resistance (1.5 K/W) and safe operating area limitations at elevated temperatures.

Does SPA07N60C2 have an integrated body diode, and what are its key recovery parameters?

Yes, SPA07N60C2 includes a monolithic body diode with typical reverse recovery time (t_rr) of 750–1275 ns and reverse recovery charge (Q_rr) of 4.9 µC at T_j = 25 °C, V_R = 350 V, and dI_F/dt = 100 A/µs-critical for minimizing commutation loss in PFC and flyback topologies.

Can SPA07N60C2 be used in avalanche mode, and what are the limits?

Yes, SPA07N60C2 is rated for both single-pulse (E_AS = 230 mJ at I_D = 5.5 A, V_DD = 50 V) and repetitive avalanche (E_AR = 0.5 mJ, I_AR = 7.3 A), with energy loss calculated as P_AV = E_AR × f. Repetitive operation must respect thermal limits and duty cycle constraints per Page 1 notes.

What is the recommended gate resistor value for optimal switching performance in a 380 V, 7.3 A inductive load application?

A 12 Ω gate resistor is validated in the datasheet (Page 3, switching time test conditions) for V_DD = 380 V, T_j = 125 °C, yielding t_d(on) = 11 ns, t_r = 33 ns, t_d(off) = 47–70 ns, and t_f = 9–13.5 ns. Lower values increase switching speed but risk ringing; higher values reduce EMI at the cost of increased loss.

SPA07N60C2 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-220-3 Full Pack

Packaging:: Bulk

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 7.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 600mOhm @ 4.6A, 10V

Vgs(th) (Max) @ Id:: 5.5V @ 350µA

Gate Charge (Qg) (Max) @ Vgs:: 35 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 970 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 32W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-31

SPA07N60C2 FAQ

1.How can I place an order for SPA07N60C2 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPA07N60C2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPA07N60C2 reliable?

The price and inventory of SPA07N60C2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPA07N60C2 is usually 5 days.

3.What payment methods are accepted for SPA07N60C2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPA07N60C2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPA07N60C2?

SPA07N60C2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPA07N60C2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPA07N60C2?

For technical support, including SPA07N60C2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPA07N60C2 requirements.

6.How does Aetrix verify that SPA07N60C2 is sourced from the original manufacturer or authorized distributors?

All SPA07N60C2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPA07N60C2 meets industry standards.

7.What is the process for return or replacement of SPA07N60C2?

All SPA07N60C2 units undergo pre-shipment inspection (PSI). If there is an issue with SPA07N60C2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPA07N60C2 part is unused and in its original packaging.

Return procedure for SPA07N60C2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.