Infineon Technologies SPA08N50C3XKSA1

Overview

SPA08N50C3 from Infineon Technologies is a 500 V, 7.6 A N-channel CoolMOS™ C3 power MOSFET in PG-TO220FP package, featuring R_DS(on) = 0.6 Ω at T_j = 25°C, ultra-low gate charge (Q_g = 32 nC), and periodic avalanche rating. It serves as a high-efficiency primary-side switch in offline SMPS, PFC stages, and industrial AC-DC converters.

For engineers reviewing the SPA08N50C3 datasheet, SPA08N50C3 pinout, SPA08N50C3 application, or SPA08N50C3 equivalent, key selection criteria include its 500 V V_(BR)DSS, 0.6 Ω R_DS(on), 32 nC total gate charge, 50 V/ns dv/dt capability at 125°C, and FullPAK thermal performance with R_thJC = 3.9 K/W.

Technical Context

This device employs Infineon's CoolMOS™ C3 superjunction technology to achieve low conduction and switching losses simultaneously. Its optimized charge distribution enables reduced C_iss (750 pF), C_oss (350 pF), and Cr_ss (12 pF), supporting high-frequency operation up to 100 kHz in hard-switched topologies.

The MOSFET integrates an intrinsic fast-recovery body diode (t_rr = 370 ns, Q_rr = 3.6 µC) and supports unclamped inductive switching with EAS = 230 mJ (single pulse, I_D = 5.5 A). Its gate threshold voltage (V_GS(th) = 2.1–3.9 V) ensures robust noise immunity in noisy industrial environments.

Key Specifications

Pinout & Package

SPA08N50C3 uses the PG-TO220FP (FullPAK) package: isolated plastic case with integral heatsink tab, 2500 V_AC/1 min isolation, and footprint-compatible with standard TO-220 but with lower thermal resistance (R_thJC = 3.9 K/W vs. 1.5 K/W for non-FullPAK).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STP8NK50ZFP and IPP60R099C7, SPA08N50C3 delivers the best balance of avalanche ruggedness, gate drive simplicity, and thermal performance in 400 V-class industrial SMPS-enabling smaller heatsinks, fewer snubbers, and higher reliability without sacrificing switching speed.

Availability

SPA08N50C3 is available at Aetrix Electronics and suitable for industrial motor drives, server SMPS, LED streetlight drivers, and PLC power supplies requiring stable component supply and long-term lifecycle support.

Supply support for SPA08N50C3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The CoolMOS™ C3 product line targets high-efficiency, high-reliability power conversion in 380–400 V DC-link applications such as PFC, server PSUs, and industrial inverters-emphasizing low gate charge, avalanche robustness, and thermal efficiency.

FAQ

What is the maximum continuous drain current for SPA08N50C3 at 100°C case temperature?

The maximum continuous drain current is 4.6 A at T_C = 100°C, as specified in the Absolute Maximum Ratings table. This value accounts for thermal derating due to junction-to-case thermal resistance (R_thJC = 3.9 K/W) and ensures T_j remains ≤150°C under steady-state conduction. Derating curves on page 5 confirm this limit is valid for both DC and pulsed operation within safe operating area boundaries.

Does SPA08N50C3 require a gate resistor for stability in hard-switched applications?

Yes-a gate resistor (typically 10–22 Ω) is required to dampen parasitic oscillation caused by PCB trace inductance interacting with the device's 12 pF Cr_ss and 32 nC Q_g. Without it, ringing can exceed ±20 V gate voltage swing, risking overvoltage failure or false turn-on. The recommended value balances switching speed (t_r/t_f ≈ 5–7 ns) and EMI suppression, as validated in Infineon's AN2015-05 application note.

Can SPA08N50C3 be used in synchronous rectification configurations?

No-it is not designed for synchronous rectification. While its body diode has t_rr = 370 ns and V_SD = 1.0–1.2 V, the device lacks the low reverse recovery charge (Q_rr = 3.6 µC) and fast soft-recovery characteristics required for efficient SR operation. Dedicated SR controllers (e.g., IR1167) paired with logic-level MOSFETs like IRF7832 are recommended instead.

Is the PG-TO220FP package of SPA08N50C3 electrically isolated from the drain terminal?

Yes-the PG-TO220FP (FullPAK) package provides reinforced electrical isolation between the mounting tab (drain) and the lead frame, rated at 2500 V_AC for 1 minute. This eliminates the need for insulating pads in Class I safety designs and simplifies heatsink integration in high-voltage applications such as industrial AC-DC front-ends and solar microinverters.