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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPA11N60C3IN

Name: SPA11N60C3IN
Brand: Infineon Technologies
SKU: SPA11N60C3IN
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPA11N60C3IN

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: SPA11N60C3IN.pdf

Description:: MOSFET N-CH 650V 11A TO220-3-31

Quantity:: RFQ Add To RFQ list

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Inventory:7,018

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Product details

Overview

SPA11N60C3 from Infineon Technologies is a 600 V, 11 A CoolMOS™ C3 superjunction N-channel power MOSFET in PG-TO220 package, featuring R_DS(on) = 0.38 Ω at T_j = 25°C, ultra-low gate charge (Q_g = 45–60 nC), and periodic avalanche rating. It serves as a high-efficiency primary-side switch in offline SMPS, PFC stages, and industrial AC-DC converters operating up to 150°C junction temperature.

For engineers reviewing the SPA11N60C3 datasheet, SPA11N60C3 pinout, SPA11N60C3 application, or SPA11N60C3 equivalent, key selection criteria include its 50 V/ns dv/dt capability, 340 mJ single-pulse avalanche energy, thermal resistance R_thJC = 1 K/W, and compatibility with hard-switched 650 V-class topologies requiring low conduction and switching losses.

Technical Context

This device implements Infineon's third-generation CoolMOS™ technology, optimized for reduced gate charge (Q_gd = 22 nC) and enhanced transconductance (g_fs = 8.3 S), enabling faster switching with lower E_off and reduced driver loss. Its 600 V V_(BR)DSS rating and 700 V avalanche breakdown support robust operation under transient overvoltage conditions.

The MOSFET integrates a fast-recovery body diode (t_rr = 400–600 ns, Q_rr = 6 µC) and supports high peak current (I_D,puls = 33 A), making it suitable for continuous conduction mode (CCM) PFC and resonant LLC primary switches where diode reverse recovery behavior critically impacts efficiency and EMI.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Withstands DC bus voltages up to 480 V in 650 V-class designs with margin for surge and ringing.
R_DS(on)	0.38 Ω @ T_j = 25°C - Enables <1.5 W conduction loss at 7 A, supporting compact heatsink design in 100–300 W SMPS.
Q_g	45–60 nC - Reduces gate drive power and allows use of low-cost, low-current drivers (e.g., 1 A peak).
E_AS	340 mJ - Supports reliable operation under single-pulse inductive fault conditions without external snubbers.
dv/dt	50 V/ns - Ensures immunity to false turn-on in high-noise bridge-leg configurations with fast voltage transients.
t_rr	400–600 ns - Limits reverse recovery loss and EMI generation in hard-switched PFC, especially at >50 kHz.
R_thJC	1 K/W - Allows direct mounting to heatsink with minimal thermal interface resistance for stable 125°C case operation.

Pinout & Package

Package: PG-TO220 (3-pin, full isolation: 2500 V_AC, 1 min). Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source. The drain-connected metal tab provides low-inductance, high-current path and thermal conduction to heatsink.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	High-impedance control terminal; requires <6.8 Ω series gate resistor to damp oscillation and limit di/dt during turn-on.
Pin 2	Drain (Tab)	Main high-voltage power terminal; electrically isolated from case per IEC 60747-17; must be mounted to heatsink with insulating pad or shoulder washer.
Pin 3	Source	Reference node for gate drive and current sensing; connects to low-side shunt or controller ground in non-isolated topologies.

Key Features

Feature	Design Value
Ultra-low Q_gd/Q_g ratio	22/45–60 nC → improves hard-switching E_off by >25% vs. prior-gen 600 V MOSFETs, reducing total switching loss.
Periodic avalanche rated	Rated for repetitive avalanche (I_AR = 11 A, E_AR = 0.6 mJ) - enables robustness in unclamped inductive switching without derating.
Extreme dv/dt immunity	50 V/ns at T_j = 125°C - eliminates need for negative gate voltage or active Miller clamp in half-bridge leg applications.
Improved g_fs	8.3 S - delivers tighter V_GS(th) control (2.1–3.9 V) and higher current gain across temperature, easing gate drive design.
Low C_oss energy-related	C_o(er) = 45 pF - reduces capacitive turn-off loss in ZVS and quasi-resonant converters operating above 100 kHz.

Applications

Server PSU Primary Switch

Industrial PFC Boost Stage

Use Scenario: 80+ Titanium server power supply operating in continuous conduction mode (CCM) with 380–400 V DC bus.

IC Role / Device Role / Timing Role: High-side switch in interleaved boost PFC stage, switching at 65–100 kHz with synchronous rectification.

Use Value: Low Q_g and R_DS(on) reduce total loss by ~1.2 W per phase vs. standard 600 V MOSFETs, improving full-load efficiency to >98.5%.

Use Scenario: 3 kW industrial motor drive front-end with active PFC and wide input range (300–480 V AC).

IC Role / Device Role / Timing Role: Main switching element in boost converter, handling 11 A RMS current with 33 A peak pulses.

Use Value: Avalanche rating and 150°C T_j capability allow operation without derating in sealed enclosures with ambient up to 70°C.

LED Driver Flyback Primary

Solar Microinverter DC-Link Switch

Use Scenario: 150 W outdoor LED streetlight driver with universal AC input and high reliability requirement.

IC Role / Device Role / Timing Role: Primary-side switch in flyback topology, operating in DCM/QR mode with 65 kHz nominal frequency.

Use Value: Fast body diode (t_rr = 400 ns) minimizes dead-time loss and EMI, enabling compliance with EN 55015 Class B without additional filtering.

Use Scenario: 300–500 W solar microinverter interfacing PV string (600–1000 V DC) to grid.

IC Role / Device Role / Timing Role: DC-link switch in H-bridge inverter stage, subjected to high dv/dt and partial shading transients.

Use Value: 50 V/ns dv/dt rating and 700 V avalanche breakdown ensure safe operation during rapid irradiance changes and lightning-induced surges.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP12N60DM6	R_DS(on) = 0.33 Ω, Q_g = 32 nC, but no specified periodic avalanche rating; t_rr = 550 ns.	Lacks documented repetitive avalanche capability - unsuitable for unclamped inductive loads or high-reliability PFC.	Preferable only when lowest conduction loss dominates and avalanche stress is absent.
IPP60R190C7	R_DS(on) = 0.19 Ω, Q_g = 43 nC, 650 V rating, but higher C_iss (1350 pF) increases gate drive loss.	Higher capacitance raises E_on at >100 kHz; not qualified for 150°C continuous operation.	Better for high-frequency ZVS designs below 70°C ambient; avoid in thermally constrained industrial enclosures.

Compared with STP12N60DM6 and IPP60R190C7, SPA11N60C3 uniquely balances avalanche ruggedness, 150°C operation, and low Q_gd-driven E_off, making it optimal for mission-critical industrial PFC and server PSUs where reliability trumps marginal conduction loss reduction.

Availability

SPA11N60C3 is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, and solar microinverters requiring stable component supply, long-term lifecycle support, and traceable sourcing from original manufacturer stock.

Supply support for SPA11N60C3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive ICs, and industrial control solutions, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

The CoolMOS™ C3 product line targets high-efficiency AC-DC conversion in enterprise, industrial, and renewable energy systems, emphasizing ruggedness, thermal stability, and ease of gate drive integration.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The SPA11N60C3 supports 7 A continuous drain current at T_C = 100°C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-220 package and ensures safe operation within R_thJC = 1 K/W and junction temperature ≤150°C.

Does SPA11N60C3 require a negative gate voltage for reliable turn-off?

No. The device's 50 V/ns dv/dt immunity and low Q_gd eliminate the need for negative gate drive in typical half-bridge or full-bridge configurations. A 0 V to +10 V or +13 V gate swing with appropriate series resistance suffices for robust switching.

Can SPA11N60C3 replace older CoolMOS™ C2 devices in existing designs?

Yes - it is a direct drop-in replacement for SPP11N60C2 and SPI11N60C2 with identical pinout, voltage rating, and thermal footprint. Its lower Q_g and improved E_off typically yield 0.3–0.5% system efficiency gain without layout or driver changes.

Is the drain tab electrically isolated in the PG-TO220 package?

Yes. The PG-TO220 variant used for SPA11N60C3 features full electrical isolation between the drain-connected metal tab and the mounting surface (2500 V_AC, 1 minute), enabling safe use on uninsulated heatsinks without additional isolation hardware.

SPA11N60C3IN Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 11A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 380mOhm @ 7A, 10V

Vgs(th) (Max) @ Id:: 3.9V @ 500µA

Gate Charge (Qg) (Max) @ Vgs:: 60 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1200 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 33W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-31

SPA11N60C3IN FAQ

1.How can I place an order for SPA11N60C3IN through Aetrix?

Please submit a Request for Quotation (RFQ) for SPA11N60C3IN on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPA11N60C3IN reliable?

The price and inventory of SPA11N60C3IN are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPA11N60C3IN is usually 5 days.

3.What payment methods are accepted for SPA11N60C3IN?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPA11N60C3IN transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPA11N60C3IN?

SPA11N60C3IN orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPA11N60C3IN order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPA11N60C3IN?

For technical support, including SPA11N60C3IN datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPA11N60C3IN requirements.

6.How does Aetrix verify that SPA11N60C3IN is sourced from the original manufacturer or authorized distributors?

All SPA11N60C3IN products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPA11N60C3IN meets industry standards.

7.What is the process for return or replacement of SPA11N60C3IN?

All SPA11N60C3IN units undergo pre-shipment inspection (PSI). If there is an issue with SPA11N60C3IN, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPA11N60C3IN part is unused and in its original packaging.

Return procedure for SPA11N60C3IN:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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