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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPA12N50C3XKSA1

Name: SPA12N50C3XKSA1
Brand: Infineon Technologies
SKU: SPA12N50C3XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPA12N50C3XKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: SPA12N50C3XKSA1.pdf

Description:: MOSFET N-CH 560V 11.6A TO220-FP

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SPA12N50C3 from Infineon Technologies is a 500 V, 11.6 A N-channel CoolMOS™ C3 power MOSFET in PG-TO220FP package, featuring R_DS(on) = 0.38 Ω at T_j = 25°C, ultra-low gate charge (Q_g = 49 nC), and periodic avalanche rating. It serves as a high-efficiency primary-side switch in offline SMPS, PFC stages, and industrial AC-DC converters operating up to 150°C junction temperature.

For engineers reviewing the SPA12N50C3 datasheet, SPA12N50C3 pinout, SPA12N50C3 application, or SPA12N50C3 equivalent, key selection criteria include its 500 V V_(BR)DSS, 0.38 Ω R_DS(on), 49 nC total gate charge, 50 V/ns dv/dt capability, and FullPAK thermal performance (R_thJC = 3.8 K/W).

Technical Context

This device employs Infineon's CoolMOS™ C3 superjunction technology to achieve superior conduction and switching loss trade-offs versus planar MOSFETs. Its optimized cell structure delivers low effective output capacitance (C_o(er) = 45 pF) and reduced reverse transfer capacitance (C_rss = 30 pF), enabling high-frequency operation with minimal EMI generation.

The integrated body diode exhibits t_rr = 380 ns and Q_rr = 5.5 µC under V_R = 400 V, I_F = 11.6 A, and di_F/dt = 100 A/µs - suitable for hard-switched topologies where diode recovery behavior directly impacts efficiency and voltage overshoot.

Key Specifications

Parameter	Value and Actual Design Meaning
V_(BR)DSS	500 V - Withstands 500 V drain-source breakdown at T_j = 25°C; derates to ~560 V at T_jmax = 150°C per datasheet curve.
R_DS(on)	0.38 Ω - On-resistance at V_GS = 10 V, I_D = 7 A, T_j = 25°C; rises to ~0.92 Ω at 150°C, defining conduction loss envelope.
Q_g	49 nC - Total gate charge at V_DD = 400 V, I_D = 11.6 A; determines driver strength requirement and switching energy.
E_AS	340 mJ - Single-pulse avalanche energy at I_D = 5.5 A, V_DD = 50 V; enables robustness against transient overvoltage without external snubbers.
dv/dt Rating	50 V/ns - Maximum drain-source voltage slope under specified conditions (V_DS = 400 V, I_D = 11.6 A, T_j = 125°C); critical for noise immunity in high-speed switching.
R_thJC	3.8 K/W - Junction-to-case thermal resistance for FullPAK (PG-TO220FP); defines minimum heatsink interface requirement for 33 W continuous dissipation.

Pinout & Package

SPA12N50C3 uses the PG-TO220FP (FullPAK) package - a surface-mount variant of TO-220 with isolated drain tab rated for 2500 V_AC (1 min). The drain is connected to the exposed metal tab on the bottom side; source and gate are leaded terminals.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control input	Receives PWM signal; requires ≥10 V drive for full enhancement; gate threshold V_GS(th) = 2.1–3.9 V.
2 (Drain)	High-side power node	Connected to PCB copper area via isolated tab; carries full load current and withstands 500 V blocking.
3 (Source)	Reference return path	Common reference for gate drive and current sensing; tied to power ground in most flyback/PFC configurations.

Key Features

Feature	Design Value
Ultra-low gate charge	Q_g = 49 nC reduces driver losses and enables >100 kHz operation with standard gate drivers.
Periodic avalanche rated	Rated for repetitive avalanche (I_AR = 11.6 A, E_AR = 0.6 mJ) - supports unclamped inductive switching without derating.
Extreme dv/dt immunity	50 V/ns rating ensures reliable operation in noisy high-di/dt environments like motor drives and resonant converters.
Low effective output capacitance	C_o(er) = 45 pF minimizes turn-off energy and improves zero-voltage switching (ZVS) margin in soft-switching topologies.

Applications

Industrial SMPS

Server PSU Primary Switch

Use Scenario: 1 kW open-frame AC-DC power supply for factory automation controllers.

IC Role / Device Role / Timing Role: High-side switching element in LLC resonant half-bridge primary stage.

Use Value: Low R_DS(on) and C_oss reduce conduction and switching losses, enabling >94% efficiency at full load and 50°C ambient.

Use Scenario: 80 PLUS Titanium-certified 1600 W server power supply.

IC Role / Device Role / Timing Role: Main switch in active clamp forward or asymmetrical half-bridge topology.

Use Value: 49 nC Q_g allows fast switching with low driver power, supporting 200–300 kHz operation while maintaining thermal margin.

PFC Boost Stage

Motor Drive Inverter

Use Scenario: Two-phase interleaved boost PFC for telecom rectifier systems.

IC Role / Device Role / Timing Role: Fast-switching boost switch handling 12 A RMS current at 100 kHz.

Use Value: 340 mJ E_AS tolerates line surges and inductor saturation events without failure, improving system reliability.

Use Scenario: 3 kW HVAC inverter with discrete IGBT replacement strategy.

IC Role / Device Role / Timing Role: High-voltage leg switch in 3-phase inverter bridge driving permanent magnet motors.

Use Value: 50 V/ns dv/dt rating prevents false triggering during high di/dt commutation, reducing gate driver complexity.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP12NM50N	500 V, R_DS(on) = 0.36 Ω, Q_g = 52 nC, TO-220 package (non-isolated tab)	Lacks 2500 V_AC isolation; higher C_oss (520 pF vs. 400 pF)	Prefer when cost sensitivity outweighs isolation need and board layout permits non-isolated mounting.
IPP60R190C6	600 V, R_DS(on) = 0.19 Ω, Q_g = 45 nC, TO-220FP, CoolMOS™ C6 generation	Higher voltage rating but lower R_DS(on); not drop-in due to different gate threshold (2.5–3.5 V vs. 2.1–3.9 V)	Select for new designs requiring <0.2 Ω R_DS(on) at 600 V, accepting minor gate drive tuning.

Compared with STP12NM50N and IPP60R190C6, SPA12N50C3 offers optimal balance of isolation safety, 500 V rating, and proven ruggedness in legacy PFC/SMPS platforms - making it ideal for redesigns where footprint, thermal interface, and avalanche robustness are prioritized over marginal R_DS(on) reduction.

Availability

SPA12N50C3 is available at Aetrix Electronics and suitable for industrial SMPS, server power supplies, and PFC boost stages requiring stable component supply, long-term lifecycle support, and certified thermal performance in FullPAK packaging.

Supply support for SPA12N50C3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

The CoolMOS™ C3 product line targets high-efficiency, high-reliability power conversion in 500–650 V applications - designed specifically for demanding offline SMPS, solar inverters, and industrial motor drives where thermal stability and avalanche ruggedness are critical.

FAQ

What is the maximum continuous drain current for SPA12N50C3 at 100°C case temperature?

The maximum continuous drain current is 7 A at T_C = 100°C, as specified in the Absolute Maximum Ratings table. This value reflects thermal limitation of the FullPAK package (R_thJC = 3.8 K/W) and must be applied with appropriate heatsinking to maintain T_j ≤ 150°C under steady-state operation.

Does SPA12N50C3 have an isolated drain tab, and what is its isolation rating?

Yes - the PG-TO220FP package features a fully isolated drain tab rated for 2500 V_AC for 1 minute, verified per IEC 60747-5-2. This enables direct mounting to heatsinks without insulating pads in high-voltage applications such as industrial power supplies and EV chargers.

How does the body diode performance compare to standard silicon MOSFETs?

Its body diode has t_rr = 380 ns and Q_rr = 5.5 µC under V_R = 400 V, I_F = 11.6 A, and di_F/dt = 100 A/µs - significantly faster and lower Q_rr than conventional planar MOSFETs. This reduces switching losses and voltage spikes in hard-switched topologies like flyback and forward converters.

Can SPA12N50C3 replace SPP12N50C3 in existing designs?

Yes - SPA12N50C3 and SPP12N50C3 share identical electrical specifications, thermal characteristics, and pinout. The only difference is package type: SPA uses FullPAK (PG-TO220FP), while SPP uses standard PG-TO220. Layout adaptation is required for the isolated tab and surface-mount footprint, but no circuit redesign is needed.

SPA12N50C3XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 560 V

Current - Continuous Drain (Id) @ 25°C:: 11.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 380mOhm @ 7A, 10V

Vgs(th) (Max) @ Id:: 3.9V @ 500µA

Gate Charge (Qg) (Max) @ Vgs:: 49 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1200 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 33W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-31

SPA12N50C3XKSA1 FAQ

1.How can I place an order for SPA12N50C3XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPA12N50C3XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPA12N50C3XKSA1 reliable?

The price and inventory of SPA12N50C3XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPA12N50C3XKSA1 is usually 5 days.

3.What payment methods are accepted for SPA12N50C3XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPA12N50C3XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPA12N50C3XKSA1?

SPA12N50C3XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPA12N50C3XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPA12N50C3XKSA1?

For technical support, including SPA12N50C3XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPA12N50C3XKSA1 requirements.

6.How does Aetrix verify that SPA12N50C3XKSA1 is sourced from the original manufacturer or authorized distributors?

All SPA12N50C3XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPA12N50C3XKSA1 meets industry standards.

7.What is the process for return or replacement of SPA12N50C3XKSA1?

All SPA12N50C3XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with SPA12N50C3XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPA12N50C3XKSA1 part is unused and in its original packaging.

Return procedure for SPA12N50C3XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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