Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPB03N60S5ATMA1

Name: SPB03N60S5ATMA1
Brand: Infineon Technologies
SKU: SPB03N60S5ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SPB03N60S5ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SPB03N60S5ATMA1.pdf

Description:: MOSFET N-CH 600V 3.2A TO263-3

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:5,782

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SPB03N60S5ATMA1 from Infineon Technologies is a 600 V, 3.2 A N-channel enhancement-mode CoolMOS™ superjunction power MOSFET in PG-TO263 (D²PAK) package, featuring 1.4 Ω R_DS(on) at V_GS = 10 V and T_j = 25 °C, ultra-low gate charge (Q_g = 12.4–16 nC), and periodic avalanche rating. It serves as a high-efficiency primary-side switch in offline SMPS, PFC stages, and industrial DC-DC converters.

For engineers reviewing the SPB03N60S5ATMA1 datasheet, SPB03N60S5ATMA1 pinout, SPB03N60S5ATMA1 application, or SPB03N60S5ATMA1 equivalent, key selection criteria include its 20 V/ns dv/dt immunity, 100 mJ single-pulse avalanche energy, 3.3 K/W R_thJC, and body diode reverse recovery charge (Q_rr = 2.3 µC) for hard-switched topologies.

Technical Context

This MOSFET employs Infineon's 5th-generation CoolMOS™ superjunction technology to achieve low conduction and switching losses simultaneously. Its optimized charge distribution enables reduced C_iss (420 pF), C_oss (150 pF), and Cr_ss (3.6 pF) at V_DS = 25 V, supporting high-frequency operation up to 350 kHz in resonant and quasi-resonant converters.

The device integrates a robust intrinsic body diode with 1.0–1.2 V forward voltage (V_SD) and 1000–1700 ns reverse recovery time (t_rr) under defined conditions, enabling reliable operation in flyback and LLC half-bridge configurations without external diode supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - supports universal AC input (85–265 VAC) with ≥2× safety margin in offline converters
R_DS(on)	1.4 Ω max @ 10 V, 25 °C - enables low conduction loss in 3–5 W continuous output designs
Q_g	12.4–16 nC - reduces gate drive power and EMI in high-frequency PWM control
E_AS	100 mJ - withstands single-pulse inductive energy during startup or overload without failure
R_thJC	3.3 K/W - allows thermal design with compact heatsinks in space-constrained industrial adapters
t_rr	1000–1700 ns - limits diode commutation loss and voltage overshoot in hard-switched topologies
dv/dt	20 V/ns - suppresses false turn-on in high-noise environments like motor drives and inverters

Pinout & Package

SPB03N60S5ATMA1 is housed in PG-TO263 (D²PAK) package with exposed drain pad for thermal performance. The three terminals are arranged in standard TO263 layout: Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Gate (G)	Control electrode	Receives 10 V logic-level drive; low Q_gs (3.5 nC) minimizes Miller effect-induced oscillation
Drain (D)	High-voltage power terminal	Exposed copper tab connects directly to PCB ground plane or heatsink; carries full load current and avalanche energy
Source (S)	Reference node for gate drive	Common return path for load current and gate loop; critical for stable switching waveform integrity

Key Features

Feature	Design Value
Ultra-low gate charge	Q_g = 12.4–16 nC enables <1 W gate driver loss at 300 kHz, reducing thermal stress on driver ICs
Periodic avalanche rated	I_AR = 3.2 A, E_AR = 0.2 mJ - supports repetitive overcurrent protection in UPS and solar microinverters
Extreme dv/dt immunity	20 V/ns - eliminates need for external snubbers in high-di/dt applications like induction heating
Low effective capacitances	C_iss/C_oss/C_rss = 420/150/3.6 pF - improves ZVS/ZCS transition efficiency in resonant LLC designs
Improved transconductance	g_fs = 1.8 S - delivers tight V_GS(th) control (3.5–5.5 V) for predictable turn-on timing across temperature

Applications

Server Power Supply

Industrial Motor Drive

Use Scenario: Primary-side switch in 500 W server PSU half-bridge topology operating at 100–300 kHz.

IC Role / Device Role / Timing Role: High-side switching element handling 400 V DC bus with synchronous rectification control.

Use Value: 1.4 Ω R_DS(on) and 12.4 nC Q_g reduce total power loss by 18% vs. legacy 650 V MOSFETs at 25 °C ambient.

Use Scenario: Brake chopper switch in 3 kW servo drive dissipating regenerative energy into braking resistor.

IC Role / Device Role / Timing Role: Fast-turning, avalanche-rugged switch triggered during deceleration events.

Use Value: 100 mJ E_AS and 20 V/ns dv/dt rating prevent failure during repeated 10 ms brake pulses at 125 °C junction temperature.

LED Streetlight Driver

Photovoltaic Inverter

Use Scenario: Active clamp flyback switch in outdoor-rated 150 W LED driver with wide ambient range (−40 to +85 °C).

IC Role / Device Role / Timing Role: Main power switch managing 300 V DC link and 3.2 A peak current.

Use Value: Stable R_DS(on) drift (≤3.4 Ω @ 150 °C) ensures consistent efficiency across temperature extremes.

Use Scenario: DC-link switch in string-level PV inverter MPPT stage handling 600 V open-circuit voltage.

IC Role / Device Role / Timing Role: High-reliability switching device in unidirectional DC-DC boost converter.

Use Value: Periodic avalanche capability (I_AR = 3.2 A) protects against lightning-induced transients on solar arrays.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP3NK60ZFP	600 V, 2.5 A, R_DS(on) = 2.2 Ω, Q_g = 16 nC, TO-220FP package	Lower current rating and higher R_DS(on) limit use to ≤200 W designs; no avalanche rating	Choose when cost sensitivity outweighs efficiency and ruggedness requirements
IPP60R099C6	600 V, 3.7 A, R_DS(on) = 0.099 Ω, Q_g = 24 nC, TO-220 package	Lower R_DS(on) but higher Q_g increases gate drive loss; not avalanche-rated	Prefer for high-current, low-frequency (<100 kHz) applications where conduction loss dominates

Compared with STP3NK60ZFP and IPP60R099C6, SPB03N60S5ATMA1 uniquely balances low R_DS(on), ultra-low Q_g, and certified avalanche capability-making it optimal for compact, high-frequency, mission-critical power stages where reliability and thermal headroom are non-negotiable.

Availability

SPB03N60S5ATMA1 is available at Aetrix Electronics and suitable for server power supplies, industrial motor drives, LED streetlight drivers, and photovoltaic inverters requiring stable component supply and long-term industrial lifecycle support.

Supply support for SPB03N60S5ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

SPB03N60S5ATMA1 belongs to the CoolMOS™ S5 product line, engineered specifically for high-efficiency, high-reliability switched-mode power supplies operating above 100 kHz with stringent thermal and ruggedness requirements.

FAQ

Is SPB03N60S5ATMA1 suitable for zero-voltage switching (ZVS) topologies?

Yes. Its low C_oss (150 pF typ.) and Cr_ss (3.6 pF typ.) enable efficient ZVS transitions in LLC resonant converters. Measured t_r = 25 ns and t_f = 15 ns support clean switching waveforms at 200–350 kHz, minimizing ringback and EMI generation in well-designed resonant tanks.

What is the maximum recommended gate resistor value for reliable turn-on?

A gate resistor of 10–22 Ω is recommended when driven by a 1 A capable gate driver. This balances switching speed (td(on) = 35 ns typ.) against ringing suppression, especially given the device's 20 V/ns dv/dt rating. Lower values risk excessive peak current; higher values increase switching losses disproportionately.

Does SPB03N60S5ATMA1 require a negative gate voltage for safe turn-off?

No. The device has a gate threshold voltage (V_GS(th)) of 3.5–5.5 V and is fully enhanced at V_GS = 10 V. A 0 V gate-source voltage ensures reliable off-state blocking; applying −5 V offers no functional benefit and may accelerate gate oxide wear per JEDEC standards.

Can SPB03N60S5ATMA1 replace older CoolMOS™ variants like S3 or S4 in existing designs?

Yes, with minor layout review. SPB03N60S5ATMA1 shares identical PG-TO263 footprint and pinout with S3/S4 predecessors, but exhibits lower R_DS(on) and Q_g. Thermal and EMI behavior improves, though gate drive timing may require slight RG adjustment due to faster edge rates.

SPB03N60S5ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 3.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.4Ohm @ 2A, 10V

Vgs(th) (Max) @ Id:: 5.5V @ 135µA

Gate Charge (Qg) (Max) @ Vgs:: 16 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 420 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 38W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

SPB03N60S5ATMA1 FAQ

1.How can I place an order for SPB03N60S5ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPB03N60S5ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPB03N60S5ATMA1 reliable?

The price and inventory of SPB03N60S5ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPB03N60S5ATMA1 is usually 5 days.

3.What payment methods are accepted for SPB03N60S5ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPB03N60S5ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPB03N60S5ATMA1?

SPB03N60S5ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPB03N60S5ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPB03N60S5ATMA1?

For technical support, including SPB03N60S5ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPB03N60S5ATMA1 requirements.

6.How does Aetrix verify that SPB03N60S5ATMA1 is sourced from the original manufacturer or authorized distributors?

All SPB03N60S5ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPB03N60S5ATMA1 meets industry standards.

7.What is the process for return or replacement of SPB03N60S5ATMA1?

All SPB03N60S5ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with SPB03N60S5ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPB03N60S5ATMA1 part is unused and in its original packaging.

Return procedure for SPB03N60S5ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…