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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPB08P06P

Name: SPB08P06P
Brand: Infineon Technologies
SKU: SPB08P06P
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPB08P06P

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SPB08P06P.pdf

Description:: MOSFET P-CH 60V 8.8A TO263-3

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Product details

Overview

SPB08P06P from Infineon Technologies is a P-channel enhancement-mode SIPMOS® power MOSFET rated for -60 V drain-source voltage, 8.8 A continuous drain current at 25 °C, and 0.3 Ω maximum R_DS(on) at -10 V V_GS. It operates up to 175 °C junction temperature, features avalanche and dv/dt ruggedness, and is used in high-reliability DC-DC converters and industrial motor control H-bridge high-side switches.

For engineers reviewing the SPB08P06P datasheet, SPB08P06P pinout, SPB08P06P application, or SPB08P06P equivalent, key selection criteria include its -60 V V_BR(DSS), -8.8 A I_D, 0.3 Ω R_DS(on), 175 °C T_j,max, and integrated avalanche-rated body diode with 60–90 ns t_rr.

Technical Context

This device implements a trench-based P-channel MOSFET structure optimized for low conduction loss and robust switching under inductive loads. Its gate threshold voltage of -2.1 to -4 V ensures reliable turn-on with standard logic-level gate drivers while maintaining noise immunity.

Thermal design is supported by a 3.6 K/W R_thJC and 40 K/W R_thJA on 6 cm² PCB copper, enabling high-power density operation without forced air. The -10 V plateau voltage and -10 to -13 nC total gate charge indicate moderate drive strength requirements for 100 kHz-class switching.

Key Specifications

Parameter	Value and Actual Design Meaning
V_BR(DSS)	-60 V - Withstands reverse-biased drain-source voltage up to 60 V before breakdown
R_DS(on),max	0.3 Ω @ V_GS = -10 V, I_D = -6.2 A - Limits conduction loss to ≤1.6 W at 8.8 A
I_D,cont	-8.8 A @ T_A = 25 °C - Supports continuous load current in non-heatsinked industrial modules
E_AS	70 mJ - Absorbs single-pulse inductive energy without failure in flyback or H-bridge snubbing
t_rr	60–90 ns - Enables efficient synchronous rectification or freewheeling in 100–500 kHz SMPS
Q_g	-10 to -13 nC - Requires ~1.3 mA average gate drive current at 100 kHz switching
T_j,max	175 °C - Allows operation in sealed enclosures or high-ambient environments without derating

Pinout & Package

SPB08P06P is housed in a P-TO263-3-2 surface-mount package with isolated heatsink tab (drain-connected). The three terminals are arranged linearly: Pin 1 = Gate, Pin 2 = Source, Pin 3 = Drain (tab).

Pin/Terminal	Circuit Role	Design Meaning
Gate (G)	Control input	Accepts negative V_GS to modulate channel conductivity; requires -10 V for full enhancement
Source (S)	Reference node	Serves as common return for gate drive and load current; tied to system ground in high-side configurations
Drain (D)	Power output	Connected to high-voltage rail; electrically bonded to exposed metal tab for thermal conduction and EMI shielding

Key Features

Feature	Design Value
Avalanche rated	70 mJ single-pulse energy rating enables reliable operation in inductive switching without external snubbers
dv/dt rated	Rated for ≥2 kV/µs transient voltage slew rate, preventing false turn-on during fast-rising edge transients
175 °C operation	Full specification guaranteed up to 175 °C junction temperature, supporting sealed automotive or industrial enclosures
Pb-free & RoHS	Lead-free terminations and halogen-free packaging meet EU RoHS Directive 2011/65/EU and JEDEC J-STD-020 reflow profiles
Integrated body diode	Reverse recovery time of 60–90 ns and Q_rr of 100–150 nC support efficient freewheeling in half-bridge topologies

Applications

Industrial Motor Control

DC-DC Converters

Use Scenario: High-side switch in 24–48 V brushed DC motor H-bridge drives for factory automation actuators.

IC Role / Device Role / Timing Role: P-channel high-side power switch controlling motor direction and braking via PWM.

Use Value: Avalanche ruggedness absorbs back-EMF spikes during abrupt current interruption, eliminating need for external clamping diodes.

Use Scenario: Synchronous rectifier in isolated 48 V-to-12 V flyback converter for telecom power supplies.

IC Role / Device Role / Timing Role: Low-loss secondary-side switch replacing Schottky diode to improve efficiency above 200 kHz.

Use Value: 60–90 ns t_rr and 0.3 Ω R_DS(on) reduce conduction and switching losses, enabling >92% peak efficiency.

Automotive Body Electronics

Uninterruptible Power Supplies

Use Scenario: Load switch for 12 V battery-backed lighting and HVAC control modules in passenger vehicles.

IC Role / Device Role / Timing Role: Reverse-polarity protected high-side power distribution switch with overtemperature shutdown.

Use Value: 175 °C T_j,max and -60 V V_BR(DSS) ensure reliability across cold-crank (-18 V) to load-dump (+40 V) transients.

Use Scenario: Output stage switch in 24 V online UPS inverters handling surge currents during grid failure.

IC Role / Device Role / Timing Role: Robust power switch managing bidirectional energy flow between battery and AC output stage.

Use Value: 35.3 A pulsed drain current rating supports 3× rated load surges without thermal runaway or avalanche failure.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF4905PBF	R_DS(on) = 0.2 Ω (lower), but T_j,max = 175 °C same; Q_g = -72 nC (higher); no avalanche rating specified	Lacks documented avalanche capability; higher gate charge increases driver complexity and switching loss	Prefer SPB08P06P where inductive energy absorption or compact gate drive is critical
STP12P06	R_DS(on) = 0.15 Ω (lower), but V_BR(DSS) = -60 V same; T_j,max = 150 °C; no dv/dt rating published	Lower thermal limit restricts use in sealed enclosures; missing dv/dt spec increases risk of spurious turn-on	Prefer SPB08P06P for designs requiring 175 °C operation or high-noise industrial environments

Compared with IRF4905PBF and STP12P06, SPB08P06P uniquely combines avalanche rating, dv/dt immunity, and 175 °C operation-making it optimal for unclamped inductive switching in space-constrained, high-ambient industrial systems.

Availability

SPB08P06P is available at Aetrix Electronics and suitable for industrial motor control, DC-DC conversion, automotive body electronics, and uninterruptible power supply applications requiring stable component supply and long-term lifecycle assurance.

Supply support for SPB08P06P includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

SPB08P06P belongs to Infineon's SIPMOS® P-channel power MOSFET product line, designed specifically for high-reliability, high-temperature switching in industrial and automotive power stages.

FAQ

What is the maximum safe operating voltage for SPB08P06P in continuous DC applications?

The SPB08P06P has a guaranteed drain-source breakdown voltage (V_BR(DSS)) of -60 V at T_j = 25 °C, derating to approximately -55 V at 175 °C. For reliable long-term operation, Infineon recommends limiting steady-state V_DS to ≤80% of rated value, i.e., -48 V, especially under high-temperature or repetitive avalanche conditions.

Can SPB08P06P be used as a direct replacement for N-channel MOSFETs in existing circuits?

No-SPB08P06P is a P-channel device requiring negative gate-to-source voltage for turn-on, unlike N-channel MOSFETs that require positive V_GS. Circuit redesign is necessary: gate drive must reference the source (not ground), and logic polarity must be inverted. It is suited for high-side switching where level-shifting complexity is undesirable.

Does SPB08P06P require a gate resistor, and if so, what value is recommended?

Yes-a gate resistor is required to control dV/dt and prevent oscillation. Based on its -10 to -13 nC Q_g and typical gate driver output impedance, a 10–22 Ω series resistor is recommended for 100–200 kHz switching. Lower values increase switching speed but risk ringing; higher values reduce EMI but raise switching losses.

How does the integrated body diode perform in reverse recovery compared to discrete Schottky diodes?

The SPB08P06P's body diode has t_rr = 60–90 ns and Q_rr = 100–150 nC-slower and higher charge than most Schottky diodes (typically <10 ns, <20 nC). It is suitable for freewheeling in medium-frequency (<500 kHz) hard-switched topologies but not ideal for ultra-fast synchronous rectification where Schottky or GaN alternatives offer superior recovery.

SPB08P06P Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: SIPMOS®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 8.8A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 300mOhm @ 6.2A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 13 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 420 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 42W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

SPB08P06P FAQ

1.How can I place an order for SPB08P06P through Aetrix?

Please submit a Request for Quotation (RFQ) for SPB08P06P on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPB08P06P reliable?

The price and inventory of SPB08P06P are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPB08P06P is usually 5 days.

3.What payment methods are accepted for SPB08P06P?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPB08P06P transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPB08P06P?

SPB08P06P orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPB08P06P order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPB08P06P?

For technical support, including SPB08P06P datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPB08P06P requirements.

6.How does Aetrix verify that SPB08P06P is sourced from the original manufacturer or authorized distributors?

All SPB08P06P products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPB08P06P meets industry standards.

7.What is the process for return or replacement of SPB08P06P?

All SPB08P06P units undergo pre-shipment inspection (PSI). If there is an issue with SPB08P06P, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPB08P06P part is unused and in its original packaging.

Return procedure for SPB08P06P:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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