Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies SPB08P06PGATMA1

Part No.:
SPB08P06PGATMA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
AetrixSPB08P06PGATMA1.pdf
Description:
MOSFET P-CH 60V 8.8A D2PAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,507

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

SPB08P06PGATMA1 from Infineon Technologies is a P-channel enhancement-mode SIPMOS® power transistor in PG-TO263-3 package, rated for -60 V VDS, 8.8 A continuous drain current at TA=25 °C, and RDS(on) ≤ 300 mΩ at VGS = -10 V. It features avalanche rating, dv/dt ruggedness, and 175 °C maximum junction temperature-designed for high-reliability DC-DC converter high-side switches and motor control H-bridge legs.

For engineers reviewing the SPB08P06PGATMA1 datasheet, SPB08P06PGATMA1 pinout, SPB08P06PGATMA1 application, or SPB08P06PGATMA1 equivalent, key selection criteria include its -60 V breakdown voltage, -8.8 A continuous current capability, 3.6 K/W junction-to-case thermal resistance, avalanche energy rating (EAS = 42 mJ), and AEC-Q101 qualification for automotive-grade robustness.

Technical Context

This device operates as a normally-off P-channel MOSFET with gate threshold voltage VGS(th) between -2.1 V and -4 V at 25 °C, enabling direct logic-level drive in low-voltage control circuits. Its dynamic parameters include Ciss = 420 pF max, Qg = 13 nC max, and tr = 69 ns max-supporting efficient switching in 100–500 kHz power stages.

The integrated body diode exhibits VSD = -1.55 V max at IF = -8.83 A and trr = 90 ns max, with Qrr = 150 nC max, making it suitable for synchronous rectification and freewheeling paths where reverse recovery behavior impacts efficiency and EMI.

Key Specifications

ParameterValue and Actual Design Meaning
VDS Rating-60 V - supports 48 V bus systems with 20 % derating margin against transients
ID Continuous-8.8 A at TA = 25 °C - enables compact heatsink design in convection-cooled 10–15 W loads
RDS(on) max300 mΩ at VGS = -10 V - limits conduction loss to ≤ 2.3 W at full load in 12 V input converters
EAS42 mJ - withstands single-pulse inductive energy without failure in motor gate-drive snubbers
Qg13 nC max - determines gate driver current requirement (~1.3 A peak for 10 ns rise time)
Tj max175 °C - allows operation in under-hood automotive environments without thermal shutdown
RthJC3.6 K/W - enables direct thermal coupling to heatsink via exposed drain pad in TO263 package

Pinout & Package

SPB08P06PGATMA1 uses the PG-TO263-3 (D²PAK) surface-mount package with isolated gate, source, and drain terminals. The exposed drain pad on the bottom provides low-inductance, high-current path and primary thermal conduction path to PCB copper.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (Source)Source terminal (P-channel)Reference node for gate drive; connects to system ground or floating rail in high-side configuration
Pin 2 (Gate)Control electrodeReceives negative gate-source voltage to turn on; requires < -2.1 V threshold and < -10 V for full enhancement
Pin 3 (Drain)Main current outputConnected to load/high-voltage rail; electrically and thermally tied to exposed metal pad on package underside

Key Features

FeatureDesign Value
Avalanche-rated operationGuarantees single-pulse energy handling up to 42 mJ without parametric shift or failure
dv/dt ruggednessRated for 2 kV/µs under specified conditions-prevents false turn-on during fast voltage transients
AEC-Q101 qualifiedValidated for automotive applications including engine control, body electronics, and ADAS power stages
Pb-free & halogen-freeComplies with RoHS and IEC61249-2-21-enables use in consumer, industrial, and automotive supply chains
175 °C junction ratingSupports extended thermal margin in sealed enclosures or high-ambient environments (e.g., under-dash modules)

Applications

Automotive Body Control ModuleIndustrial DC-DC Converter

Use Scenario: High-side load switch for LED headlamp dimming and relay driving in BCM.

IC Role / Device Role / Timing Role: P-channel MOSFET controlling 12 V rail to loads with logic-compatible gate drive.

Use Value: Eliminates need for charge pump or level shifter; leverages -2.1 V threshold for direct microcontroller interface.

Use Scenario: Synchronous rectifier in isolated flyback or forward converter secondary side.

IC Role / Device Role / Timing Role: Low-loss freewheeling switch replacing Schottky diode in 24 V output stage.

Use Value: Reduces conduction loss by >40 % vs. 40 V Schottky at 8 A, improving efficiency by ~1.2 % at full load.

Motor Drive Half-Bridge LegPower Over Ethernet (PoE) PSE Switch

Use Scenario: Upper switch in brushed DC motor H-bridge for seat/mirror actuation.

IC Role / Device Role / Timing Role: High-side switch with integrated avalanche energy absorption during inductive kickback.

Use Value: Withstands 42 mJ single-pulse energy without external snubber, reducing BOM count and board area.

Use Scenario: Power switch in PoE 802.3at Class 4 PSE detection and classification circuitry.

IC Role / Device Role / Timing Role: Controlled hot-swap FET enabling safe 57 V DC delivery with inrush limiting.

Use Value: Rated for -60 V and 175 °C-meets IEEE 802.3at transient and thermal requirements for outdoor PSE units.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IRF4905PBFVDS = -55 V, RDS(on) = 200 mΩ @ VGS = -10 V, no AEC-Q101 qualificationLower voltage rating limits use in 48 V systems; lacks automotive qualification and avalanche ratingPrefer for cost-sensitive non-automotive 24 V industrial controls where transient immunity is less critical
IPB80P06P4L-04VDS = -60 V, RDS(on) = 4.0 mΩ @ VGS = -10 V, TO263-7 package, higher current (80 A)Higher performance but larger footprint and gate charge (Qg = 120 nC); over-specified for ≤10 A applicationsChoose only when scaling to >30 A loads or requiring lower RDS(on) with active cooling

Compared with IRF4905PBF and IPB80P06P4L-04, SPB08P06PGATMA1 delivers optimal balance of voltage margin, thermal robustness, and gate drive simplicity for 8–10 A automotive and industrial switching-without over-engineering or sacrificing AEC-Q101 compliance.

Availability

SPB08P06PGATMA1 is available at Aetrix Electronics and suitable for automotive body control modules, industrial DC-DC converters, motor drive half-bridge legs, and Power over Ethernet PSE switches requiring stable component supply across production lifecycles.

Supply support for SPB08P06PGATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive ICs, and sensor solutions, with global manufacturing and R&D centers.

SPB08P06PGATMA1 belongs to the SIPMOS® P-channel power MOSFET product line, engineered for high-reliability switching in automotive and industrial power stages where avalanche capability, thermal resilience, and AEC-Q101 compliance are mandatory.

FAQ

What is the maximum gate-source voltage rating for SPB08P06PGATMA1?

The absolute maximum gate-source voltage is ±20 V. Operation beyond ±20 V risks permanent gate oxide damage. Recommended gate drive is -10 V for full enhancement and minimal RDS(on), with minimum turn-on threshold at -2.1 V. Gate drive circuits must include clamping or Zener protection to prevent overshoot during switching transitions.

Does SPB08P06PGATMA1 require a gate resistor, and what value is recommended?

Yes-a gate resistor is required to control dV/dt and suppress ringing. For typical 100–300 kHz switching, a 10 Ω series resistor is recommended when driven by a 1 A capable gate driver. This balances switching speed (tr/tf ≈ 50–70 ns) and EMI suppression while keeping Qg-related losses below 50 mW at 200 kHz.

Can SPB08P06PGATMA1 be used in linear (analog) regulation mode?

No-it is not characterized or qualified for linear-mode operation. Its Safe Operating Area (SOA) curve shows limited DC capability due to thermal runaway risk in the linear region. The device is optimized for switched-mode applications only; sustained operation in the ohmic or saturation region may cause irreversible thermal failure even below 175 °C junction temperature.

Is SPB08P06PGATMA1 compatible with lead-free reflow soldering profiles?

Yes-its Pb-free lead finish and halogen-free construction comply with IPC-J-STD-020D. It supports standard lead-free reflow profiles with peak temperature up to 260 °C for ≤30 seconds. Preheat ramp rate should not exceed 3 °C/s, and time above 217 °C must stay within 60–150 seconds to avoid package delamination or bond wire stress.

SPB08P06PGATMA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
SIPMOS®
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
8.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
300mOhm @ 6.2A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
13 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
420 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
42W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-TO263-3

SPB08P06PGATMA1 FAQ

1.How can I place an order for SPB08P06PGATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPB08P06PGATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPB08P06PGATMA1 reliable?

The price and inventory of SPB08P06PGATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPB08P06PGATMA1 is usually 5 days.

3.What payment methods are accepted for SPB08P06PGATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPB08P06PGATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPB08P06PGATMA1?

SPB08P06PGATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPB08P06PGATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPB08P06PGATMA1?

For technical support, including SPB08P06PGATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPB08P06PGATMA1 requirements.

6.How does Aetrix verify that SPB08P06PGATMA1 is sourced from the original manufacturer or authorized distributors?

All SPB08P06PGATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPB08P06PGATMA1 meets industry standards.

7.What is the process for return or replacement of SPB08P06PGATMA1?

All SPB08P06PGATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with SPB08P06PGATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPB08P06PGATMA1 part is unused and in its original packaging.

Return procedure for SPB08P06PGATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SPB08P06PGATMA1 Tags

  • SPB08P06PGATMA1
  • SPB08P06PGATMA1 PDF
  • SPB08P06PGATMA1 Datasheet
  • SPB08P06PGATMA1 Specifications
  • SPB08P06PGATMA1 Images
  • Infineon Technologies
  • Infineon Technologies SPB08P06PGATMA1
  • Buy SPB08P06PGATMA1
  • SPB08P06PGATMA1 Price
  • SPB08P06PGATMA1 Distributor
  • SPB08P06PGATMA1 Supplier
  • SPB08P06PGATMA1 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER