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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPB100N03S2-03

Name: SPB100N03S2-03
Brand: Infineon Technologies
SKU: SPB100N03S2-03
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPB100N03S2-03

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SPB100N03S2-03.pdf

Description:: MOSFET N-CH 30V 100A TO263-3

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Product details

Overview

SPB100N03S2-03 from Infineon Technologies is an N-channel enhancement-mode OptiMOS™ power MOSFET in TO263-3 (D²PAK) package, rated for 30 V V_DS, 100 A continuous drain current at T_C = 25 °C, and 2.2–3.3 mΩ R_DS(on) at V_GS = 10 V. It features avalanche rating, 175 °C maximum junction temperature, and dv/dt ruggedness up to 6 kV/µs - deployed in high-current DC-DC converters and motor drive half-bridges.

For engineers reviewing the SPB100N03S2-03 datasheet, SPB100N03S2-03 pinout, SPB100N03S2-03 application, or SPB100N03S2-03 equivalent, key selection criteria include R_DS(on) vs. thermal resistance trade-offs, gate charge profile for switching loss optimization, avalanche energy (E_AS = 810 mJ), and SMD-compatible thermal performance on 6 cm² PCB copper.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low R_DS(on) × Q_g figure-of-merit (FOM), enabling high-efficiency synchronous rectification and high-frequency PWM operation. Its 0.3–0.5 K/W junction-to-case thermal resistance supports 300 W power dissipation at T_C = 25 °C with minimal heatsinking.

The device integrates a robust body diode with 100 A continuous forward current capability, 0.9–1.3 V forward voltage at 100 A, and 79–100 ns reverse recovery time - critical for freewheeling paths in buck converters and H-bridge motor control where commutation losses must be minimized.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage for 24 V nominal bus systems with margin against transients.
R_DS(on) max	3.3 mΩ at V_GS = 10 V, I_D = 80 A - Enables <1.5 W conduction loss at 100 A, reducing heatsink requirements.
I_D cont	100 A at T_C = 25 °C - Supports high-current output stages without paralleling devices in compact designs.
E_AS	810 mJ (single-pulse, I_D = 80 A, V_DD = 25 V) - Withstands inductive turn-off energy in motor drives without external snubbers.
dv/dt rating	6 kV/µs - Ensures reliable operation under fast voltage transients in noisy industrial environments.
Q_g	113–150 nC - Determines gate driver current demand and switching speed; enables ~100 kHz operation with moderate gate resistance.
T_j max	175 °C - Allows sustained operation in sealed enclosures or high-ambient automotive under-hood applications.

Pinout & Package

SPB100N03S2-03 uses the P-TO263-3-2 (D²PAK) surface-mount package with exposed drain pad for thermal and electrical connection. The three terminals are arranged in standard D²PAK layout: Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control input	Receives 10 V logic-level drive; requires low-impedance path to minimize switching losses and oscillation risk.
Pin 2 (Drain)	High-side switch node / Power output	Exposed copper tab - must be soldered to ≥6 cm² PCB copper area for thermal management and low-inductance current return.
Pin 3 (Source)	Reference node / Return path	Connects to power ground plane; layout must minimize source inductance to preserve gate control stability.

Key Features

Feature	Design Value
Optimized FOM (Q_g × R_DS(on))	Enables high-frequency switching with low total gate + conduction losses in SMPS designs.
175 °C rated junction temperature	Supports operation in thermally constrained spaces without derating at ambient up to 105 °C.
Avalanche-rated (E_AS = 810 mJ)	Eliminates need for external clamping in inductive load switching, improving system reliability.
Low R_thJC (0.3–0.5 K/W)	Permits direct thermal coupling to heatsink or PCB copper, achieving >200 W effective dissipation in production layouts.
dv/dt ruggedness (6 kV/µs)	Prevents false turn-on during high-slew-rate voltage transitions in half-bridge configurations.

Applications

DC-DC Converter Primary Switch

Motor Drive High-Side Switch

Use Scenario: 24 V input, 12 V/80 A output synchronous buck converter in telecom power shelf.

IC Role / Device Role / Timing Role: Main high-side power switch operating at 200–500 kHz PWM frequency.

Use Value: Low R_DS(on) reduces conduction loss below 2.5 W; low Q_g enables efficient gate driving with integrated controller.

Use Scenario: 24 V brushed DC motor driver in automated warehouse conveyor system.

IC Role / Device Role / Timing Role: High-side switch in half-bridge topology controlling motor direction and braking.

Use Value: Avalanche rating absorbs inductive kickback during PWM off-time; 175 °C rating sustains 100% duty cycle at elevated ambient.

Power ORing Controller

Hot-Swap Circuit Protection

Use Scenario: Redundant 48 V power supply backplane with automatic failover in server rack.

IC Role / Device Role / Timing Role: Low-loss pass element replacing Schottky diodes in ideal diode configuration.

Use Value: R_DS(on) < 3.3 mΩ cuts forward drop to <0.3 V at 100 A - reducing heat generation by >80% vs. diode-based ORing.

Use Scenario: 24 V hot-plug module for industrial I/O expansion chassis.

IC Role / Device Role / Timing Role: Inrush current limiter and fault-isolation switch in series with supply rail.

Use Value: Fast turn-off (t_f ≤ 59 ns) and dv/dt immunity prevent latch-up during plug-in transients; 100 A rating handles peak surge currents.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL100N03LPM	R_DS(on) = 3.2 mΩ (typ), Q_g = 130 nC, TO-263 package, but only 150 °C T_j max and no specified E_AS.	Lacks avalanche rating and 175 °C operation - unsuitable for unclamped inductive loads or extended high-temp environments.	Select only when thermal margin exceeds 25 °C and inductive energy is externally clamped.
STL100N3LLH6	R_DS(on) = 2.8 mΩ (max), Q_g = 125 nC, same TO-263 package, but lower E_AS (520 mJ) and higher C_iss (6200 pF).	Higher input capacitance increases gate drive loss; reduced avalanche capability limits use in motor drives with high L×di/dt.	Preferable only if lower R_DS(on) is prioritized over switching loss and ruggedness.

Compared with IRL100N03LPM and STL100N3LLH6, SPB100N03S2-03 delivers superior thermal resilience (175 °C), verified single-pulse avalanche energy (810 mJ), and lower C_iss/C_rss ratio - making it optimal for high-reliability, high-current industrial switching where both conduction efficiency and transient robustness are mandatory.

Availability

SPB100N03S2-03 is available at Aetrix Electronics and suitable for high-current DC-DC converters, motor drive inverters, and hot-swap power distribution systems requiring stable component supply across multi-year production cycles.

Supply support for SPB100N03S2-03 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and AEC-Q101 standards.

SPB100N03S2-03 belongs to the OptiMOS™ 30 V product line, engineered specifically for high-efficiency, high-power-density power conversion in industrial motor drives, server power supplies, and battery-powered equipment demanding low R_DS(on) and rugged switching behavior.

FAQ

What is the recommended gate resistor value for SPB100N03S2-03 in a 200 kHz buck converter?

A 2.2 Ω gate resistor is validated in the datasheet for 100 A switching at 15 V drive and 200 kHz. This value balances switching speed (t_r ≈ 40–60 ns) against gate driver stress and EMI. Lower values increase dv/dt and ringing risk; higher values raise switching losses beyond 10 W at full load.

Does SPB100N03S2-03 require a Kelvin source connection for stable operation?

No - the TO263-3 package does not provide a dedicated Kelvin source pin. Stable operation relies on low-inductance PCB layout: short, wide traces from source pad to driver ground, and separate power and signal ground planes tied at a single point near the source pad.

Can SPB100N03S2-03 replace SPB100N03S2-02 in existing designs?

Yes - SPB100N03S2-02 has identical package, pinout, and V_DS/I_D ratings, but higher R_DS(on) (4.0 mΩ max). Substitution improves conduction loss by ~25% at 100 A, provided gate drive strength and thermal design accommodate the slightly higher Q_g (150 nC vs. 140 nC).

Is the body diode suitable for synchronous rectification in a 100 kHz LLC resonant converter?

Yes - with t_rr = 79–100 ns and Q_rr = 109–136 nC, the body diode supports synchronous rectification up to 300 kHz. However, external SiC Schottky diodes are preferred above 200 kHz to eliminate reverse recovery loss and improve light-load efficiency.

SPB100N03S2-03 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 150 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 7020 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

SPB100N03S2-03 FAQ

1.How can I place an order for SPB100N03S2-03 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPB100N03S2-03 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPB100N03S2-03 reliable?

The price and inventory of SPB100N03S2-03 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPB100N03S2-03 is usually 5 days.

3.What payment methods are accepted for SPB100N03S2-03?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPB100N03S2-03 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPB100N03S2-03?

SPB100N03S2-03 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPB100N03S2-03 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPB100N03S2-03?

For technical support, including SPB100N03S2-03 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPB100N03S2-03 requirements.

6.How does Aetrix verify that SPB100N03S2-03 is sourced from the original manufacturer or authorized distributors?

All SPB100N03S2-03 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPB100N03S2-03 meets industry standards.

7.What is the process for return or replacement of SPB100N03S2-03?

All SPB100N03S2-03 units undergo pre-shipment inspection (PSI). If there is an issue with SPB100N03S2-03, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPB100N03S2-03 part is unused and in its original packaging.

Return procedure for SPB100N03S2-03:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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