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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPB100N03S203T

Name: SPB100N03S203T
Brand: Infineon Technologies
SKU: SPB100N03S203T
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPB100N03S203T

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SPB100N03S203T.pdf

Description:: MOSFET N-CH 30V 100A TO263-3

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Product details

Overview

SPB100N03S2-03 from Infineon Technologies is an N-channel enhancement-mode OptiMOS™ power MOSFET in TO263-3 (D²PAK) package, rated for 30 V V_DS, 100 A continuous drain current at T_C = 25 °C, and 2.2–3.3 mΩ R_DS(on) at V_GS = 10 V and I_D = 80 A. It supports 175 °C operation, is avalanche-rated (E_AS = 810 mJ), and features low gate charge × R_DS(on) figure-of-merit for high-efficiency synchronous rectification in DC-DC converters.

For engineers reviewing the SPB100N03S2-03 datasheet, SPB100N03S2-03 pinout, SPB100N03S2-03 application, or SPB100N03S2-03 equivalent, key selection criteria include its 0.3–0.5 K/W junction-to-case thermal resistance, 6 kV/µs dv/dt rating, 100 A reverse diode capability, and SMD-compatible TO263-3 footprint for high-current power stages.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low conduction and switching losses in high-frequency, high-current applications. Its gate threshold voltage (2.1–4 V) ensures robust noise immunity while enabling fast turn-on with standard 10 V gate drivers.

The device integrates a co-packaged body diode with 100 A continuous forward current, 0.9–1.3 V forward voltage at 100 A, and 79–100 ns reverse recovery time-enabling reliable freewheeling in buck, half-bridge, and motor drive topologies without external Schottky supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS Rating	30 V - Supports 24 V nominal bus systems with 25 % headroom for transients
R_DS(on) max	3.3 mΩ at V_GS = 10 V, I_D = 80 A - Enables ≤ 33 W conduction loss at 100 A
I_D Continuous	100 A at T_C = 25 °C - Requires heatsinking to sustain full current in real PCB layouts
E_AS	810 mJ single-pulse avalanche energy - Withstands inductive turn-off stress without clamping circuitry
Q_g total	150 nC max - Determines gate driver peak current requirement (~3 A for 50 ns rise time)
R_thJC	0.5 K/W max - Enables direct thermal coupling to heatsink via exposed drain pad
dv/dt Rating	6 kV/µs - Resists false turn-on in high-dV/dt environments like motor drives

Pinout & Package

SPB100N03S2-03 uses the TO263-3 (D²PAK) surface-mount package with exposed drain pad for thermal and electrical connection. The three terminals are arranged in a single-row gull-wing configuration compatible with automated reflow assembly.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (S)	Low-side reference node; connects to ground or low-side switch node
Pin 2 (Gate)	Control input (G)	High-impedance MOS gate requiring <100 nA leakage; driven by logic-level or dedicated gate driver
Pin 3 (Drain)	Power output (D)	Exposed copper pad on underside - electrically and thermally connected to drain; must be soldered to large copper area

Key Features

Feature	Design Value
Optimized FOM (Q_g × R_DS(on))	330 nC·mΩ typical - Reduces combined switching + conduction loss in 100–500 kHz SMPS
175 °C maximum junction temperature	Enables operation in sealed enclosures or high-ambient industrial environments without derating
Avalanche-rated	Guarantees ruggedness under unclamped inductive switching (e.g., relay driving, motor phase control)
Low R_thJC	0.3 K/W typical - Allows >230 A theoretical chip current with proper heatsinking (per ANPS071E)
Reverse diode performance	100 A continuous / 400 A pulsed IS, 109–136 nC Q_rr - Supports efficient synchronous rectification or freewheeling

Applications

Server VRMs

Industrial Motor Drives

Use Scenario: High-density 48 V–12 V step-down conversion for CPU/GPU core rails in rack-mounted servers.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in multiphase buck converter; switched at 300–600 kHz.

Use Value: 3.3 mΩ R_DS(on) minimizes conduction loss at 100+ A per phase; 0.5 K/W R_thJC enables direct heatsink mounting for thermal management.

Use Scenario: Half-bridge leg in 24–48 V BLDC motor controllers for factory automation actuators.

IC Role / Device Role / Timing Role: High-current, high-dv/dt switching element with integrated body diode for PWM-driven phase legs.

Use Value: 6 kV/µs dv/dt rating prevents spurious turn-on during fast commutation; 810 mJ E_AS absorbs inductive kickback without snubbers.

Telecom Power Supplies

EV Onboard Chargers (OBC)

Use Scenario: Primary-side switch in isolated LLC resonant converters for 48 V telecom rectifiers.

IC Role / Device Role / Timing Role: High-efficiency primary switch operating in ZVS region; gate driven by transformer-coupled signal.

Use Value: Low C_oss (2450–3200 pF) and Crss (470–700 pF) reduce switching loss and improve ZVS range at 200–500 kHz.

Use Scenario: Secondary-side synchronous rectifier in 3.3 kW AC/DC stage of bidirectional OBC.

IC Role / Device Role / Timing Role: 100 A-rated rectifier replacing Schottky diodes in center-tapped or full-wave configurations.

Use Value: Body diode V_SD = 0.9–1.3 V at 100 A reduces forward drop vs. discrete Schottky; Q_rr = 109–136 nC limits reverse recovery loss.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL1404ZPBF	R_DS(on) = 4.0 mΩ @ 10 V; 175 °C rated; TO220 package	Larger R_thJA (62 K/W); no SMD thermal pad; lower current density	Preferred where through-hole mounting and legacy footprint compatibility are required
STL220N3LLH6	R_DS(on) = 2.0 mΩ @ 10 V; 150 °C rated; PowerFLAT 8x8 package	Lower thermal resistance (0.7 K/W R_thJC); smaller footprint; no exposed drain pad	Selected when board space is constrained and 150 °C max T_j suffices

Compared with IRL1404ZPBF and STL220N3LLH6, SPB100N03S2-03 delivers superior thermal performance via its 0.3–0.5 K/W R_thJC and TO263-3 exposed drain, making it optimal for sustained 100 A operation in compact, high-power SMD designs where thermal headroom is critical.

Availability

SPB100N03S2-03 is available at Aetrix Electronics and suitable for server VRMs, industrial motor drives, telecom power supplies, and EV onboard chargers requiring stable component supply and long-term production continuity.

Supply support for SPB100N03S2-03 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

SPB100N03S2-03 belongs to the OptiMOS™ 3rd generation power MOSFET product line, engineered for high-current, high-frequency DC-DC conversion and motor control applications demanding low R_DS(on), low gate charge, and rugged avalanche performance.

FAQ

What is the maximum allowable gate-source voltage for SPB100N03S2-03?

The absolute maximum V_GS is ±20 V. Operation beyond this risks permanent gate oxide damage. For reliable long-term use, gate drive should be limited to +10 V to +15 V for full enhancement and avoid exceeding the 4 V upper limit of V_GS(th) by excessive margin, which increases Q_g-related losses without improving R_DS(on).

Can SPB100N03S2-03 replace a TO220-based MOSFET in an existing design?

Yes, but thermal and layout changes are required. While SPB100N03S2-03 (TO263-3) shares identical die characteristics with SPP100N03S2-03 (TO220-3), its SMD footprint demands a large copper pour for the drain pad and reflow-compatible PCB stack-up. Mechanical mounting and heatsink interface differ fundamentally-no direct mechanical drop-in is possible without redesign.

Is the body diode suitable for continuous freewheeling in a buck converter?

Yes-the device specifies 100 A continuous inverse diode current (I_S) at T_C = 25 °C and 0.9–1.3 V forward voltage at 100 A. However, due to its 79–100 ns t_rr and 109–136 nC Q_rr, it is best suited for synchronous rectification rather than asynchronous freewheeling above ~100 kHz to minimize reverse recovery loss.

Does SPB100N03S2-03 require a gate resistor for stability?

Yes-a series gate resistor (typically 2.2–10 Ω) is recommended to dampen ringing caused by gate loop inductance and prevent oscillation. The datasheet specifies switching times (e.g., t_r = 40–60 ns) using R_G = 2.2 Ω; increasing R_G slows switching to reduce EMI but raises switching loss proportionally.

SPB100N03S203T Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 150 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 7020 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

SPB100N03S203T FAQ

1.How can I place an order for SPB100N03S203T through Aetrix?

Please submit a Request for Quotation (RFQ) for SPB100N03S203T on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPB100N03S203T reliable?

The price and inventory of SPB100N03S203T are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPB100N03S203T is usually 5 days.

3.What payment methods are accepted for SPB100N03S203T?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPB100N03S203T transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPB100N03S203T?

SPB100N03S203T orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPB100N03S203T order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPB100N03S203T?

For technical support, including SPB100N03S203T datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPB100N03S203T requirements.

6.How does Aetrix verify that SPB100N03S203T is sourced from the original manufacturer or authorized distributors?

All SPB100N03S203T products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPB100N03S203T meets industry standards.

7.What is the process for return or replacement of SPB100N03S203T?

All SPB100N03S203T units undergo pre-shipment inspection (PSI). If there is an issue with SPB100N03S203T, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPB100N03S203T part is unused and in its original packaging.

Return procedure for SPB100N03S203T:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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