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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPB100N04S2-04

Name: SPB100N04S2-04
Brand: Infineon Technologies
SKU: SPB100N04S2-04
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPB100N04S2-04

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SPB100N04S2-04.pdf

Description:: MOSFET N-CH 40V 100A TO263-3

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Product details

Overview

SPB100N04S2-04 from Infineon Technologies is an N-channel enhancement-mode OptiMOS™ power MOSFET in TO263-3 (D²PAK) package, rated for 40 V V_DS, 100 A continuous drain current at T_C = 25 °C, and 2.6–3.3 mΩ R_DS(on) at V_GS = 10 V. It features avalanche rating, 6 kV/µs dv/dt capability, and 175 °C maximum junction temperature - deployed in high-current DC-DC converters and motor drive half-bridges.

For engineers reviewing the SPB100N04S2-04 datasheet, SPB100N04S2-04 pinout, SPB100N04S2-04 application, or SPB100N04S2-04 equivalent, key selection criteria include R_DS(on) vs. temperature stability, gate charge (Q_g = 129–172 nC), reverse diode recovery (Q_rr = 153–190 nC), thermal resistance (R_thJC = 0.3–0.5 K/W), and SOA robustness under pulsed switching.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low conduction loss and fast switching in synchronous rectification and high-frequency buck stages. Its gate threshold voltage (V_GS(th) = 2.1–4.0 V) ensures reliable turn-on with standard 5 V or 10 V logic-level drivers while maintaining noise immunity.

The integrated body diode supports freewheeling in inductive loads with measured t_rr = 66–80 ns and V_SD = 0.9–1.3 V at I_F = 80 A, enabling efficient operation in hard-switched topologies without external Schottky supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage compatible with 36 V nominal battery systems and 48 V industrial rails
R_DS(on) max	3.3 mΩ @ V_GS = 10 V, I_D = 80 A - Enables ≤3.3 W conduction loss at 100 A, critical for thermally constrained PCB layouts
I_D cont	100 A @ T_C = 25 °C - Supports high-current output stages without parallel devices in compact SMD designs
E_AS	810 mJ - Confirmed single-pulse avalanche energy at I_D = 80 A, V_DD = 25 V, ensuring ruggedness during load dump or short-circuit events
Q_g	129–172 nC - Defines total gate drive energy required; impacts driver sizing and switching loss in 100–500 kHz applications
t_r/t_f	54–80 ns / 53–80 ns - Fast edge rates support high-frequency PWM with minimal dead-time penalty
R_thJC	0.3–0.5 K/W - Enables direct heatsink mounting with predictable junction-to-case thermal path for thermal modeling

Pinout & Package

SPB100N04S2-04 uses a 3-pin TO263-3 (D²PAK) surface-mount package with drain-connected tab for low-inductance, high-current PCB routing and thermal transfer to copper pour or heatsink.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Low-side reference node; connects to ground or low-side switch node; carries full load current back to source
Pin 2 (Gate)	Control input	High-impedance MOSFET gate requiring <100 nA leakage; driven by dedicated gate driver IC or microcontroller with series resistor
Pin 3 (Drain)	Power output / high-side connection	Internally bonded to exposed metal tab; must be soldered to ≥6 cm² copper area for thermal performance per datasheet layout guidelines

Key Features

Feature	Design Value
Avalanche-rated operation	Guarantees safe single-pulse energy handling up to 810 mJ without device failure under inductive turn-off stress
175 °C maximum junction temperature	Supports operation in sealed enclosures or high-ambient environments (e.g., automotive under-hood, industrial motor drives)
dv/dt ruggedness	Rated for 6 kV/µs - prevents false turn-on during fast voltage transients in bridge configurations
Optimized body diode	Q_rr = 153–190 nC and t_rr = 66–80 ns enable efficient freewheeling in synchronous and asynchronous topologies
Thermally enhanced D²PAK	0.3–0.5 K/W R_thJC allows >200 W dissipation with proper heatsinking - exceeds typical TO220 alternatives

Applications

Motor Drive Half-Bridge

48 V DC-DC Buck Converter

Use Scenario: High-current BLDC motor phase leg in e-bike or industrial actuator with 48 V bus and 80–100 A peak load.

IC Role / Device Role / Timing Role: Low-side switching element in half-bridge topology; handles continuous 100 A conduction and fast 100 kHz PWM switching.

Use Value: 3.3 mΩ R_DS(on) limits conduction loss to <33 W at 100 A, reducing heatsink size and improving system efficiency over 5 mΩ alternatives.

Use Scenario: Primary synchronous rectifier in isolated 48 V → 12 V telecom or server PSU delivering >600 W.

IC Role / Device Role / Timing Role: Secondary-side power MOSFET in synchronous rectification stage; switches at 200–300 kHz with zero-voltage switching assist.

Use Value: Low Q_g (129–172 nC) and fast t_r/t_f minimize driver loss and switching transition time, increasing overall converter efficiency by ~0.8% vs. higher-Q_g parts.

Automotive Load Dump Protection

Industrial UPS Inverter Stage

Use Scenario: Clamping switch in 12/24 V automotive power distribution module subjected to ISO 7637-2 load dump pulses.

IC Role / Device Role / Timing Role: Avalanche-energy-absorbing switch placed across supply rail; conducts transient current for <100 ms duration.

Use Value: 810 mJ E_AS rating enables single-device clamping of 120 V/100 ms transients without derating or parallel devices.

Use Scenario: Output H-bridge switch in 3 kVA industrial uninterruptible power supply feeding AC motors or sensitive instrumentation.

IC Role / Device Role / Timing Role: High-current, high-reliability power switch operating at 16 kHz PWM with strict thermal management requirements.

Use Value: 175 °C T_jmax and 0.3 K/W R_thJC allow sustained 80 A operation at 65 °C ambient with forced-air cooling, eliminating thermal shutdown risk.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFB7546PBF	R_DS(on) = 3.2 mΩ @ 10 V, Q_g = 145 nC, TO220 package, no avalanche rating	Lacks specified E_AS and dv/dt rating; unsuitable for unclamped inductive switching	Prefer SPB100N04S2-04 where avalanche ruggedness or surface-mount assembly is required
STL220N4F7AG	R_DS(on) = 2.4 mΩ @ 10 V, Q_g = 160 nC, PowerFLAT 8x8 package, T_jmax = 175 °C	Lower R_DS(on) but higher C_iss (6500 pF); limited to 75 A continuous due to package thermal limits	Choose SPB100N04S2-04 when >100 A continuous current or TO263 mechanical robustness is needed

Compared with IRFB7546PBF and STL220N4F7AG, SPB100N04S2-04 uniquely combines 100 A current rating, 810 mJ avalanche capability, and TO263 thermal performance - making it optimal for high-reliability, high-current industrial switching where both conduction loss and transient survivability are design-critical.

Availability

SPB100N04S2-04 is available at Aetrix Electronics and suitable for motor drives, 48 V DC-DC converters, and industrial UPS inverters requiring stable component supply and long-term production continuity.

Supply support for SPB100N04S2-04 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

The OptiMOS™ product line delivers high-current, low-R_DS(on) silicon-based power MOSFETs engineered for efficiency-critical switching applications in automotive, industrial, and computing infrastructure.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

At T_C = 100 °C, the maximum continuous drain current is derated to approximately 60 A, based on the ID vs. TC curve (Page 4, Figure 2). This reflects thermal limitation of the TO263 package's ability to dissipate heat at elevated ambient conditions without exceeding 175 °C junction temperature.

Does SPB100N04S2-04 require a gate resistor, and what value is recommended?

Yes - a gate resistor is required to control dV/dt and prevent oscillation. For 100 A switching with a typical 2 A peak gate driver, a 2.2 Ω resistor is validated in the datasheet (td(on)/td(off) test condition), yielding ~45 ns effective rise/fall times while limiting peak gate current to ~4.5 A.

Can SPB100N04S2-04 be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) (see Page 6, Figure 9) ensures inherent current sharing stability. Parallel operation requires matched gate drive paths, symmetrical PCB layout, and individual gate resistors to avoid dynamic imbalance during switching transitions.

Is the body diode suitable for reverse recovery in high-frequency operation?

Yes - with t_rr = 66–80 ns and Q_rr = 153–190 nC, the body diode supports hard-switched operation up to 300 kHz. However, for ZVS or resonant topologies, external SiC Schottky clamping may further reduce recovery loss in critical designs.

SPB100N04S2-04 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3.3mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 172 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 7220 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

SPB100N04S2-04 FAQ

1.How can I place an order for SPB100N04S2-04 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPB100N04S2-04 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPB100N04S2-04 reliable?

The price and inventory of SPB100N04S2-04 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPB100N04S2-04 is usually 5 days.

3.What payment methods are accepted for SPB100N04S2-04?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPB100N04S2-04 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPB100N04S2-04?

SPB100N04S2-04 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPB100N04S2-04 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPB100N04S2-04?

For technical support, including SPB100N04S2-04 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPB100N04S2-04 requirements.

6.How does Aetrix verify that SPB100N04S2-04 is sourced from the original manufacturer or authorized distributors?

All SPB100N04S2-04 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPB100N04S2-04 meets industry standards.

7.What is the process for return or replacement of SPB100N04S2-04?

All SPB100N04S2-04 units undergo pre-shipment inspection (PSI). If there is an issue with SPB100N04S2-04, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPB100N04S2-04 part is unused and in its original packaging.

Return procedure for SPB100N04S2-04:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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