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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPB100N06S2-05

Name: SPB100N06S2-05
Brand: Infineon Technologies
SKU: SPB100N06S2-05
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPB100N06S2-05

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SPB100N06S2-05.pdf

Description:: MOSFET N-CH 55V 100A TO263-3

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Product details

Overview

SPB100N06S2-05 from Infineon Technologies is an N-channel enhancement-mode OptiMOS™ power MOSFET in TO263-3 (D²PAK) package, rated for 55 V V_DS, 4.7 mΩ R_DS(on) max at 100 A/10 V, and 175 °C operation. It delivers high-current switching in DC-DC converters, motor drives, and industrial power supplies where low conduction loss and robust avalanche capability are critical.

For engineers reviewing the SPB100N06S2-05 datasheet, SPB100N06S2-05 pinout, SPB100N06S2-05 application, or SPB100N06S2-05 equivalent, key selection criteria include its 100 A continuous drain current, 810 mJ single-pulse avalanche energy, 6 kV/µs dv/dt rating, thermal resistance of 0.3–0.5 K/W (junction-to-case), and SMD-compatible TO263-3 footprint.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low R_DS(on) and fast switching with controlled gate charge (Q_g = 130–170 nC, Q_gd = 53–80 nC). Its transconductance (g_fs = 68–135 S) and gate threshold voltage (V_GS(th) = 2.1–4 V) support stable turn-on under wide temperature and drive conditions.

The integrated body diode features 100 A continuous forward current, 0.9–1.3 V forward voltage at 80 A, and 60–75 ns reverse recovery time - enabling synchronous rectification and freewheeling in hard-switched topologies without external diodes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - Maximum blocking voltage before breakdown; supports 48 V bus systems with margin.
R_DS(on) max	4.7 mΩ at V_GS = 10 V, I_D = 80 A - Enables ≤0.38 W conduction loss at 100 A, reducing heatsink requirements.
I_D continuous	100 A at T_C = 25 °C - High-current capability for motor phase legs and primary-side switches.
E_AS	810 mJ - Robust single-pulse avalanche energy ensures reliability during inductive load switching transients.
dv/dt rating	6 kV/µs - Resists false turn-on in high-noise environments like inverters and SMPS with fast edge rates.
R_thJC	0.3–0.5 K/W - Low thermal resistance enables efficient heat transfer to heatsink via drain pad.
Q_g	130–170 nC - Gate charge level compatible with standard 1–2 A gate drivers for <32 ns rise/fall times.

Pinout & Package

SPB100N06S2-05 uses the surface-mount TO263-3 (D²PAK) package with exposed drain pad for thermal and electrical connection. The three terminals are arranged in a single-row configuration suitable for high-current PCB layouts.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control input	Receives 10 V logic-level signal to fully enhance channel; requires low-inductance routing to minimize ringing.
2 (Drain)	High-side switch node	Exposed copper pad on bottom - must be soldered to large PCB copper area (≥6 cm²) for thermal management.
3 (Source)	Reference return path	Connects to power ground or low-side switch source; forms Kelvin sense path when used with dedicated source pin (not present here).

Key Features

Feature	Design Value
Avalanche rated	Guaranteed 810 mJ single-pulse energy withstand without failure - eliminates need for external snubbers in inductive switching.
175 °C operating temperature	Extended junction temperature range allows operation in sealed enclosures or high-ambient industrial environments.
Low R_DS(on) × Q_g figure-of-merit	~650 mΩ·nC - balances conduction and switching losses for high-efficiency 100 kHz–500 kHz power stages.
dv/dt rated	6 kV/µs immunity - prevents spurious turn-on during fast voltage transitions in half-bridge configurations.
Optimized body diode	100 A continuous / 400 A pulsed inverse diode with 60–75 ns t_rr - supports synchronous rectification and reduces EMI vs. discrete diodes.

Applications

Motor Drive Inverter

Server PSU Primary Switch

Use Scenario: Three-phase BLDC motor control in HVAC compressors and industrial pumps.

IC Role / Device Role / Timing Role: High-side and low-side power switch in 6-pack inverter stage, switching at 8–20 kHz.

Use Value: 4.7 mΩ R_DS(on) minimizes I²R loss at 100 A peak phase current, improving efficiency by ≥1.2% over 6.5 mΩ alternatives.

Use Scenario: Primary-side switch in 80 PLUS Titanium 3 kW server power supply LLC resonant converter.

IC Role / Device Role / Timing Role: Main switching device handling 100 A pulsed drain current with ZVS-assisted turn-on.

Use Value: 810 mJ E_AS withstands leakage inductance spikes during zero-voltage switching transitions without derating.

Industrial DC-DC Converter

Solar String Inverter Stage

Use Scenario: 48 V to 12 V isolated step-down converter for factory automation I/O modules.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier MOSFET in active clamp forward topology.

Use Value: Body diode t_rr of 60–75 ns and low V_SD (0.9–1.3 V) reduce reverse recovery loss and improve light-load efficiency.

Use Scenario: DC link switching in string-level solar inverters with 1000 V PV arrays.

IC Role / Device Role / Timing Role: High-current switch in H-bridge output stage, operating at 16 kHz with 175 °C ambient tolerance.

Use Value: 175 °C rated junction temperature and 0.5 K/W R_thJC enable reliable operation without forced air cooling in outdoor enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFB4115PBF	R_DS(on) = 5.5 mΩ @ 10 V, 100 A; higher Q_g (190 nC); TO220 package	Limited to through-hole assembly; lower thermal performance due to higher R_thJC (0.75 K/W)	Prefer SPB100N06S2-05 for SMD designs requiring lower R_DS(on) and better thermal coupling.
STL110N5LF6AG	R_DS(on) = 4.2 mΩ @ 10 V, but rated only to 50 V V_DS; smaller PowerFLAT 5x6 package	Not suitable for 48 V bus systems requiring 55 V+ margin; limited current handling (80 A continuous)	Choose SPB100N06S2-05 when 55 V rating, 100 A capacity, and TO263 thermal robustness are required.

Compared with IRFB4115PBF and STL110N5LF6AG, SPB100N06S2-05 uniquely combines 55 V rating, 4.7 mΩ R_DS(on), TO263 SMD thermal performance, and 810 mJ avalanche capability - making it optimal for high-reliability industrial switching where voltage margin, current density, and transient ruggedness are jointly critical.

Availability

SPB100N06S2-05 is available at Aetrix Electronics and suitable for motor drives, server power supplies, industrial DC-DC converters, and solar inverter stages requiring stable component supply and long-term manufacturability.

Supply support for SPB100N06S2-05 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

SPB100N06S2-05 belongs to the OptiMOS™ power transistor product line, engineered for high-efficiency, high-current switching in industrial and computing power conversion systems where low R_DS(on), ruggedness, and thermal performance are essential.

FAQ

What is the maximum continuous drain current for SPB100N06S2-05 at 100 °C case temperature?

At T_C = 100 °C, the maximum continuous drain current is approximately 60 A, derived from the ID vs. TC derating curve on page 4 of the datasheet. This reflects thermal limitation due to reduced power dissipation (P_tot ≈ 120 W at 100 °C), not device degradation.

Does SPB100N06S2-05 require a negative gate voltage for safe turn-off in high-dv/dt environments?

No. The device is rated for 6 kV/µs dv/dt without false turn-on and operates reliably with 0 V to 10 V gate drive. A negative gate voltage is unnecessary unless system-level noise exceeds this rating or layout introduces excessive coupling.

Can SPB100N06S2-05 be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) (shown on page 9) ensures inherent current sharing. For stable paralleling, match gate drive loop inductance and use individual gate resistors (≥2.2 Ω) to damp oscillation between devices.

Is the TO263-3 package lead-free and RoHS-compliant?

Yes. SPB100N06S2-05 is manufactured per Infineon's qualified lead-free process and complies with RoHS Directive 2011/65/EU and JEDEC J-STD-020 moisture sensitivity level 3 (MSL-3) for surface-mount assembly.

SPB100N06S2-05 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 4.7mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 170 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6800 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

SPB100N06S2-05 FAQ

1.How can I place an order for SPB100N06S2-05 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPB100N06S2-05 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPB100N06S2-05 reliable?

The price and inventory of SPB100N06S2-05 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPB100N06S2-05 is usually 5 days.

3.What payment methods are accepted for SPB100N06S2-05?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPB100N06S2-05 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPB100N06S2-05?

SPB100N06S2-05 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPB100N06S2-05 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPB100N06S2-05?

For technical support, including SPB100N06S2-05 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPB100N06S2-05 requirements.

6.How does Aetrix verify that SPB100N06S2-05 is sourced from the original manufacturer or authorized distributors?

All SPB100N06S2-05 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPB100N06S2-05 meets industry standards.

7.What is the process for return or replacement of SPB100N06S2-05?

All SPB100N06S2-05 units undergo pre-shipment inspection (PSI). If there is an issue with SPB100N06S2-05, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPB100N06S2-05 part is unused and in its original packaging.

Return procedure for SPB100N06S2-05:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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