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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPB100N06S2L-05

Name: SPB100N06S2L-05
Brand: Infineon Technologies
SKU: SPB100N06S2L-05
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPB100N06S2L-05

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SPB100N06S2L-05.pdf

Description:: MOSFET N-CH 55V 100A TO263-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SPB100N06S2L-05 from Infineon Technologies is an N-channel enhancement-mode logic-level power MOSFET in TO263-3 (D²PAK) package, rated for 55 V V_DS, 4.4 mΩ R_DS(on) at V_GS = 10 V and I_D = 80 A, 100 A continuous drain current, and 175 °C maximum junction temperature. It is avalanche-rated, dv/dt-rated, and optimized for high-efficiency DC-DC converters and motor control in industrial power supplies.

For engineers reviewing the SPB100N06S2L-05 datasheet, SPB100N06S2L-05 pinout, SPB100N06S2L-05 application, or SPB100N06S2L-05 equivalent, key selection criteria include R_DS(on) at 4.5 V gate drive, single-pulse avalanche energy (810 mJ), thermal resistance (R_thJC = 0.5 K/W), and reverse diode forward voltage (V_SD = 0.9–1.3 V).

Technical Context

This MOSFET employs Infineon's OptiMOS™ S2 technology, featuring a trench-gate structure optimized for low conduction and switching losses. Its logic-level gate threshold (V_GS(th) = 1.2–2.0 V) enables direct drive from microcontrollers and PWM controllers without level-shifting.

The device integrates a robust body diode with t_rr = 65–80 ns and Q_rr = 125–160 nC, supporting synchronous rectification and hard-switched topologies. Thermal design is enabled by its low R_thJC (0.3–0.5 K/W) and validated transient impedance curves up to 100 ms.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - Maximum blocking voltage before avalanche onset; supports 48 V bus systems with margin.
R_DS(on) @ V_GS = 10 V	4.4 mΩ max - Enables <1 W conduction loss at 100 A, critical for high-current power stages.
I_D continuous	100 A @ T_C = 25 °C - Validated current rating with heatsink; derates per P_tot-T_C curve.
E_AS	810 mJ - Single-pulse avalanche energy at I_D = 80 A, V_DD = 25 V; ensures ruggedness in inductive switching.
Q_g	170–230 nC - Total gate charge determines driver strength requirement and switching speed trade-off.
V_GS(th)	1.2–2.0 V - Logic-compatible threshold enabling 3.3 V/5 V MCU gate drive without external bias.
t_r/t_f	25–38 ns / 24–36 ns - Fast switching transitions reduce overlap loss in hard-switched converters.
V_SD	0.9–1.3 V @ I_F = 80 A - Low body diode forward drop improves efficiency in freewheeling and synchronous rectifier modes.

Pinout & Package

SPB100N06S2L-05 is housed in a surface-mount TO263-3 (D²PAK) package with exposed drain pad for thermal performance. The three terminals are arranged as Drain (pins 1 & 2, tab), Source (pin 3), and Gate (pin 1, isolated lead).

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab + Pin 1)	Main current path input/output	Electrically connected to copper tab; requires soldered thermal pad for R_thJC = 0.5 K/W performance.
Source (Pin 3)	Reference node for gate drive and current sensing	Low-inductance connection point for gate driver return and shunt resistor placement.
Gate (Pin 1, isolated)	Control terminal for channel modulation	Requires <230 nC charge delivery; sensitive to ESD and ringing-needs local RC snubber if driven remotely.

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS ≥ 4.5 V, compatible with 3.3 V and 5 V controllers without gate boosters.
Avalanche-rated	Guaranteed single-pulse energy handling (810 mJ) eliminates need for external clamping in inductive load circuits.
175 °C operation	Extended junction temperature range supports compact thermal designs in sealed enclosures or high-ambient environments.
dv/dt rated	Withstands 6 kV/µs transient stress, reducing risk of false turn-on during fast voltage transients in half-bridge configurations.
Optimized body diode	Low Q_rr (125–160 nC) and t_rr (65–80 ns) minimize reverse recovery loss in synchronous buck and LLC resonant converters.

Applications

Motor Drive Inverter Stage

Industrial DC-DC Converter

Use Scenario: Half-bridge leg in 24–48 V BLDC motor drives for HVAC blowers and industrial pumps.

IC Role / Device Role / Timing Role: High-side and low-side switching element; handles 100 A peak phase current with <100 ns dead-time tolerance.

Use Value: Low R_DS(on) and fast switching reduce conduction and switching losses, enabling >97% efficiency at 20 kHz PWM.

Use Scenario: Primary-side switch in isolated 48 V → 12 V telecom DC-DC modules with 500 W output.

IC Role / Device Role / Timing Role: Main power switch in active-clamp forward or phase-shifted full-bridge topology.

Use Value: Avalanche rating and dv/dt immunity prevent failure during transformer leakage spike events and bus transients.

Server VRM Power Stage

Battery Protection Circuit

Use Scenario: High-current power stage in 48 V server VRM delivering up to 300 A to CPU/GPU rails.

IC Role / Device Role / Timing Role: Synchronous rectifier in multiphase buck converter; driven by dedicated gate controller.

Use Value: 4.4 mΩ R_DS(on) at 4.5 V gate drive minimizes conduction loss while maintaining tight thermal margin at 175 °C.

Use Scenario: Load switch in smart battery packs for e-bikes and power tools with overcurrent and short-circuit protection.

IC Role / Device Role / Timing Role: Bidirectional current path with integrated body diode used for charging/discharging paths.

Use Value: Robust 400 A pulsed current rating and 100 A continuous rating support high-power cell balancing and fault current interruption.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFB7546PBF	R_DS(on) = 4.2 mΩ @ 10 V, but V_GS(th) = 2.0–4.0 V; higher gate charge (220 nC); TO220 package.	Lacks dv/dt rating and specified avalanche energy; less suitable for fast-switching or inductive loads.	Prefer when TO220 mounting is required and gate drive voltage ≥ 5 V is guaranteed.
STL220N6LF6	R_DS(on) = 3.8 mΩ @ 10 V, but only rated to 150 °C; no published E_AS or dv/dt spec; DFN8 5×6 mm package.	Not qualified for industrial temperature range; unsuitable for high-reliability 175 °C ambient designs.	Consider only for space-constrained consumer-grade applications where thermal margin is relaxed.

Compared with IRFB7546PBF and STL220N6LF6, SPB100N06S2L-05 uniquely combines 175 °C operation, 810 mJ avalanche rating, and 6 kV/µs dv/dt immunity-making it the only option qualified for ruggedized industrial motor drives and telecom power systems requiring long-term reliability under transient stress.

Availability

SPB100N06S2L-05 is available at Aetrix Electronics and suitable for industrial motor drives, telecom DC-DC converters, and server VRM power stages requiring stable component supply, long-lifecycle assurance, and traceable sourcing.

Supply support for SPB100N06S2L-05 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with global manufacturing and R&D centers.

This device belongs to the OptiMOS™ S2 power MOSFET product line, engineered for high-current, high-efficiency switching in industrial and telecom power conversion systems where thermal robustness and transient immunity are critical.

FAQ

What is the maximum gate-source voltage for SPB100N06S2L-05?

The absolute maximum V_GS is ±20 V, as specified in the Absolute Maximum Ratings table. Operation beyond this risks permanent gate oxide damage. For reliable long-term use, gate drive should be limited to ≤ ±15 V, especially under transient conditions or elevated temperature.

Can SPB100N06S2L-05 be used in parallel configurations?

Yes-its positive temperature coefficient of R_DS(on) (confirmed in Fig. 9) enables inherent current sharing. Successful paralleling requires matched layout, symmetrical gate drive paths, and individual gate resistors (≥ 5 Ω) to damp oscillation and ensure simultaneous turn-on/turn-off.

Is the body diode suitable for synchronous rectification?

Yes-the body diode has characterized t_rr = 65–80 ns and Q_rr = 125–160 nC, making it viable for synchronous rectification in buck and flyback converters up to 500 kHz. However, external Schottky diodes may still be preferred in ultra-high-frequency designs due to lower Q_rr.

What PCB layout recommendations apply for thermal performance?

For optimal R_thJC = 0.5 K/W, the exposed drain pad must be soldered to ≥6 cm² of 70 µm thick copper on a 40 mm × 40 mm FR4 board, with no internal layers obstructing heat flow. Thermal vias (≥12 × 0.3 mm) under the pad are recommended to transfer heat to inner or backside planes.

SPB100N06S2L-05 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 4.4mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 230 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 7530 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

SPB100N06S2L-05 FAQ

1.How can I place an order for SPB100N06S2L-05 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPB100N06S2L-05 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPB100N06S2L-05 reliable?

The price and inventory of SPB100N06S2L-05 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPB100N06S2L-05 is usually 5 days.

3.What payment methods are accepted for SPB100N06S2L-05?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPB100N06S2L-05 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPB100N06S2L-05?

SPB100N06S2L-05 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPB100N06S2L-05 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPB100N06S2L-05?

For technical support, including SPB100N06S2L-05 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPB100N06S2L-05 requirements.

6.How does Aetrix verify that SPB100N06S2L-05 is sourced from the original manufacturer or authorized distributors?

All SPB100N06S2L-05 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPB100N06S2L-05 meets industry standards.

7.What is the process for return or replacement of SPB100N06S2L-05?

All SPB100N06S2L-05 units undergo pre-shipment inspection (PSI). If there is an issue with SPB100N06S2L-05, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPB100N06S2L-05 part is unused and in its original packaging.

Return procedure for SPB100N06S2L-05:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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