Infineon Technologies SPB100N08S2-07

Overview

SPB100N08S2-07 from Infineon is an N-channel enhancement-mode OptiMOS™ power MOSFET in TO263-3 (D²PAK) package, rated for 75 V V_DS, 100 A continuous drain current at T_C = 25 °C, and 6.8 mΩ max R_DS(on) at V_GS = 10 V. It features avalanche rating, 6 kV/µs dv/dt capability, and 175 °C maximum junction temperature - deployed in high-current DC-DC converters and motor drive half-bridges.

For engineers reviewing the SPB100N08S2-07 datasheet, SPB100N08S2-07 pinout, SPB100N08S2-07 application, or SPB100N08S2-07 equivalent, key selection criteria include R_DS(on) vs. temperature stability, gate charge profile for switching loss estimation, thermal resistance (R_thJC = 0.5 K/W), reverse diode forward voltage (V_SD = 0.9–1.3 V), and safe operating area under pulsed conditions.

Technical Context

This MOSFET uses trench-gate silicon technology optimized for low conduction and switching losses in high-frequency hard-switched topologies. Its 4530 pF typical input capacitance (C_iss) and 153 nC total gate charge support efficient gate driving with standard 10 V logic-level signals.

The device integrates a robust body diode with 90 ns typical reverse recovery time (t_rr) and 290 nC reverse recovery charge (Q_rr), enabling reliable operation in synchronous rectification and freewheeling roles without external Schottky supplementation in many 48 V systems.

Key Specifications

Pinout & Package

SPB100N08S2-07 is housed in a surface-mount TO263-3 (D²PAK) package with isolated tab. The drain-connected copper tab provides primary thermal path to PCB copper area (min. 6 cm² recommended).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IPB100N08S2-07, SPB100N08S2-07 offers identical electrical performance but distinct ordering code and packaging logistics; versus STL100N8LF6, it delivers superior ruggedness and thermal stability at modest gate drive overhead increase.

Availability

SPB100N08S2-07 is available at Aetrix Electronics and suitable for industrial motor drives, server VRMs, renewable energy inverters, and electric vehicle onboard chargers requiring stable component supply and long-term manufacturability.

Supply support for SPB100N08S2-07 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with global manufacturing and R&D centers.

This device belongs to the OptiMOS™ 2nd generation power MOSFET product line, engineered specifically for high-efficiency, high-power-density DC-DC conversion and motor control in industrial and transportation systems.

FAQ

What is the maximum allowable PCB copper area for thermal performance?

The datasheet specifies optimal thermal performance with a 6 cm² copper area on FR4 PCB (single layer, 70 µm thick) for the drain connection. Using less than this increases R_thJA to 62 K/W, limiting power dissipation to ~4.8 W at 25 °C ambient - whereas 6 cm² achieves R_thJA ≈ 40 K/W, supporting >7 W continuous dissipation under natural convection.

Does SPB100N08S2-07 require a gate resistor for stability?

Yes - a series gate resistor (typically 2.2 Ω) is required to dampen ringing caused by gate loop inductance and C_iss/C_rss interaction. The datasheet's dynamic test conditions (td(on)/tr/tf) assume R_G = 2.2 Ω; omitting it risks oscillation, excessive gate voltage overshoot (>±20 V), and accelerated gate oxide degradation.

Can this MOSFET replace SPP100N08S2-07 in existing designs?

Yes - SPB100N08S2-07 and SPP100N08S2-07 share identical die, electrical specs, thermal characteristics, and pinout. They differ only in package variant (TO263-3 vs. TO220-3) and marking code (PN0807). Mechanical mounting and PCB layout must match the TO263 footprint; thermal interface design must accommodate surface-mount soldering instead of through-hole clamping.

Is the body diode suitable for synchronous rectification at 300 kHz?

Yes - with 90 ns typical t_rr and 290 nC Q_rr, the body diode supports synchronous rectification up to 500 kHz in well-designed layouts. However, its 0.9–1.3 V V_SD yields higher conduction loss than discrete Schottky diodes; system-level efficiency gain depends on gate drive loss reduction outweighing diode loss increase.