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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPB10N10

Name: SPB10N10
Brand: Infineon Technologies
SKU: SPB10N10
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPB10N10

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SPB10N10.pdf

Description:: MOSFET N-CH 100V 10.3A TO263-3

Quantity:: RFQ Add To RFQ list

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Inventory:7,770

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Product details

Overview

SPB10N10 from Infineon Technologies is an N-channel enhancement-mode SIPMOS™ power MOSFET rated for 100 V drain-source voltage, 10.3 A continuous drain current at 25°C, and 170 mΩ maximum R_DS(on) at V_GS = 10 V. It operates up to 175°C, features avalanche and dv/dt ruggedness, and is housed in a P-TO263-3-2 surface-mount package - commonly used in DC-DC converters and motor control half-bridges.

For engineers reviewing the SPB10N10 datasheet, SPB10N10 pinout, SPB10N10 application, or SPB10N10 equivalent, key selection criteria include its 6 kV/µs dv/dt rating, 60 mJ single-pulse avalanche energy, gate plateau voltage of 6.4 V, reverse diode forward voltage of 0.93–1.25 V, and thermal resistance of 3 K/W junction-to-case.

Technical Context

This MOSFET employs planar SIPMOS technology optimized for fast switching and robust unclamped inductive switching (UIS) performance. Its transconductance (2.6–5.8 S), low output capacitance (C_oss = 72–96 pF), and gate charge profile (Q_g = 14.6–19.4 nC) support high-efficiency hard-switched topologies.

The integrated body diode exhibits t_rr = 57–71 ns and Q_rr = 134–167 nC under defined conditions, enabling moderate-frequency synchronous rectification or freewheeling without external Schottky supplementation in many 100 V-class designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports 48 V bus systems with ≥2× safety margin against transients
R_DS(on) max	170 mΩ at V_GS = 10 V, I_D = 7.8 A - determines conduction loss in continuous operation
I_D cont	10.3 A at T_C = 25°C - defines maximum steady-state current with adequate heatsinking
E_AS	60 mJ - quantifies single-pulse avalanche energy handling capability for inductive load switching
dv/dt rating	6 kV/µs - enables reliable operation in noisy, fast-switching environments without spurious turn-on
T_j max	175°C - allows operation in sealed enclosures or high-ambient industrial settings
Q_g	14.6–19.4 nC - directly impacts gate driver power and switching speed trade-offs

Pinout & Package

SPB10N10 uses the P-TO263-3-2 package - a surface-mount variant of TO-263 with three terminals and exposed drain pad for thermal management. The case is electrically connected to the drain.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Reference node for gate drive; carries full load current return path
Pin 2 (Gate)	Control input	High-impedance MOS gate requiring <20 V absolute max; threshold 2.1–4 V
Pin 3 (Drain)	Power output / high-side switch node	Connected to PCB copper pour for thermal dissipation; electrically tied to case

Key Features

Feature	Design Value
Avalanche rated	60 mJ single-pulse E_AS - eliminates need for external snubbers in inductive switching
dv/dt ruggedness	6 kV/µs - prevents false triggering during high-slew-rate voltage transients
High-temperature operation	Rated to 175°C junction - enables compact thermal design in enclosed power supplies
Low gate threshold	V_GS(th) = 2.1–4 V - compatible with 3.3 V and 5 V logic-level gate drivers
Integrated body diode	V_SD = 0.93–1.25 V at 10.3 A - provides functional freewheeling without discrete diode

Applications

Motor Drive Half-Bridge

DC-DC Buck Converter

Use Scenario: High-side switch in 24–48 V brushed DC motor control with PWM frequencies up to 100 kHz.

IC Role / Device Role / Timing Role: Power switching element controlling current flow into motor winding; handles repetitive UIS events.

Use Value: 175°C rating and 60 mJ E_AS ensure reliability during stall and direction reversal without derating.

Use Scenario: Main switch in isolated or non-isolated 48 V input buck converter delivering ≤10 A at 5–12 V output.

IC Role / Device Role / Timing Role: Primary power transistor operating in hard-switched mode with 50–100 kHz switching frequency.

Use Value: Low R_DS(on) and Q_g minimize conduction and switching losses, achieving >92% efficiency at full load.

Industrial AC-DC Front-End

LED Driver Switch

Use Scenario: PFC boost switch in universal-input (90–264 VAC) industrial power supplies.

IC Role / Device Role / Timing Role: Fast-switching MOSFET in continuous conduction mode (CCM) boost topology.

Use Value: C_iss = 320–426 pF and t_r/t_f ≤ 69/35 ns enable efficient high-frequency operation with minimal EMI.

Use Scenario: Constant-current switch in high-brightness LED string drivers for street lighting.

IC Role / Device Role / Timing Role: Series-pass element modulating LED current via PWM dimming at 1–10 kHz.

Use Value: Avalanche rating protects against inductive kickback from long LED cable runs and transformer leakage.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP10NK100Z	100 V, 10 A, R_DS(on) = 1 Ω - significantly higher on-resistance	Lower efficiency in high-current DC-DC; suitable only for lower-power or cost-sensitive designs	Prefer SPB10N10 where <200 mΩ R_DS(on) is required for thermal or efficiency targets
IRF540NPBF	100 V, 33 A, R_DS(on) = 44 mΩ - lower R_DS(on), but TO-220 through-hole package	Requires through-hole assembly and larger board area; not drop-in compatible for SMD layouts	Select IRF540NPBF only when higher current headroom and through-hole mounting are acceptable

Compared with STP10NK100Z and IRF540NPBF, SPB10N10 uniquely balances low R_DS(on), SMD P-TO263 packaging, and ruggedness - making it optimal for space-constrained, thermally demanding 10 A-class industrial power stages.

Availability

SPB10N10 is available at Aetrix Electronics and suitable for motor drives, DC-DC converters, and industrial AC-DC front-ends requiring stable component supply and long-term production continuity.

Supply support for SPB10N10 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with global manufacturing and R&D infrastructure.

The SIPMOS™ product line delivers high-voltage, high-reliability power MOSFETs engineered for industrial motor control, renewable energy inverters, and robust power conversion systems.

FAQ

What is the maximum gate-source voltage for SPB10N10?

The absolute maximum gate-source voltage is ±20 V. Operation beyond this risks permanent gate oxide damage. Recommended drive is 10 V for full enhancement, with 0 V to ensure safe turn-off. Gate drive circuits must include clamping or Zener protection if subject to transient overvoltage.

Does SPB10N10 have a built-in body diode, and what are its characteristics?

Yes - it integrates a monolithic body diode rated for 10.3 A continuous forward current at 25°C. Its forward voltage is 0.93–1.25 V at 10.3 A, with reverse recovery time of 57–71 ns and Q_rr of 134–167 nC under specified test conditions (V_R = 50 V, dI_F/dt = 100 A/µs).

Can SPB10N10 be used in linear (analog) regulation mode?

No - it is not characterized or guaranteed for linear-mode operation. Its Safe Operating Area (SOA) curve shows limited DC capability, and prolonged operation in the linear region risks thermal runaway due to positive temperature coefficient of R_DS(on). Use only in switched-mode applications per datasheet SOA limits.

What is the thermal resistance from junction to case, and how should it be applied in layout?

Junction-to-case thermal resistance is 3 K/W maximum. To achieve this, the drain pad must be soldered to ≥6 cm² of 70 µm thick copper on FR4 PCB, vertically mounted with no forced airflow. Smaller copper areas increase thermal resistance and require corresponding derating of I_D or P_tot.

SPB10N10 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: SIPMOS®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 10.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 170mOhm @ 7.8A, 10V

Vgs(th) (Max) @ Id:: 4V @ 21µA

Gate Charge (Qg) (Max) @ Vgs:: 19.4 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 426 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 50W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

SPB10N10 FAQ

1.How can I place an order for SPB10N10 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPB10N10 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPB10N10 reliable?

The price and inventory of SPB10N10 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPB10N10 is usually 5 days.

3.What payment methods are accepted for SPB10N10?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPB10N10 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPB10N10?

SPB10N10 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPB10N10 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPB10N10?

For technical support, including SPB10N10 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPB10N10 requirements.

6.How does Aetrix verify that SPB10N10 is sourced from the original manufacturer or authorized distributors?

All SPB10N10 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPB10N10 meets industry standards.

7.What is the process for return or replacement of SPB10N10?

All SPB10N10 units undergo pre-shipment inspection (PSI). If there is an issue with SPB10N10, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPB10N10 part is unused and in its original packaging.

Return procedure for SPB10N10:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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